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Match Document Document Title
7619310 Semiconductor interconnect and method of making same  
An integrated circuit interconnect structure includes a conductive line, a first barrier layer disposed on a bottom surface of conductive line, a second barrier layer disposed on the top surface of...
7618876 Semiconductor device and method of manufacturing the same by filling a trench which includes an additional coating step  
A method of manufacturing a semiconductor device comprises forming a trench in a semiconductor substrate, forming a first insulating film having a first recessed portion in the trench, forming a...
RE40983 Method to plate C4 to copper stud  
A method for plating a second metal directly to a first metal without utilizing a mask. A semiconductor substrate is provided including at least one metal feature and at least one insulating layer...
7612452 Method for manufacturing a semiconductor device and semiconductor device  
A method for manufacturing a semiconductor device includes: the first step of forming, in an insulating film provided on a substrate, a recess that is porositized at least at inner walls; the...
7611971 Method of removing residual contaminants from an environment  
A method of reducing the amount of halogenated materials in a halogen-containing environment. The method comprises introducing an aluminum compound into the halogen-containing environment, reacting...
7611915 Methods of manufacturing light emitting diodes including barrier layers/sublayers  
Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode...
7601633 Semiconductor device and method for fabricating the same  
A semiconductor device and fabricating method thereof are provided. A carbon interconnection line can be formed on an interlayer insulating layer such that the carbon interconnection line is...
7601577 Work function control of metals  
Forming metal gate transistors that have different work functions is disclosed. In one example, a first metal, which is a ‘mid gap’ metal, is manipulated in first and second regions by second...
7598170 Plasma-enhanced ALD of tantalum nitride films  
Methods of controllably producing conductive tantalum nitride films are provided. The methods comprise contacting a substrate in a reaction space with alternating and sequential pulses of a...
7595269 Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer  
By forming a tin and nickel-containing copper alloy on an exposed copper surface, which is treated to have a copper oxide thereon, a reliable and highly efficient capping layer may be provided. The...
7585766 Methods of manufacturing copper interconnect systems  
An integrated circuit (IC) may include a substrate, a first dielectric layer adjacent the substrate, and at least one trench in the first dielectric layer. The IC may also include a metal liner...
7585762 Vapor deposition processes for tantalum carbide nitride materials  
Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined...
7585754 Method of forming bonding pad opening  
A method of forming a bonding pad opening is provided. A passivation layer and a mask layer are sequentially formed on a substrate having a bonding pad formed thereon. Thereafter, the passivation...
7582557 Process for low resistance metal cap  
An exemplary method includes: providing a substrate with exposed metal and dielectric surfaces, performing a reducing process on the metal and dielectric surfaces, and transferring the substrate in...
7579277 Semiconductor device and method for fabricating the same  
A semiconductor device in which the diffusion of copper from a wire is prevented and a method for fabricating such a semiconductor device. For example, a via groove and a wire groove are formed in...
7576002 Multi-step barrier deposition method  
A method of forming barrier layers in a via hole extending through an inter-level dielectric layer and including a preformed first barrier coated onto the bottom and sidewalls of the via holes. In...
7566655 Integration process for fabricating stressed transistor structure  
A process flow integration scheme employs one or more techniques to control stress in a semiconductor device formed thereby. In accordance with one embodiment, cumulative stress contributed by RTP...
7560380 Chemical dissolution of barrier and adhesion layers  
A method of forming a metal interconnect for an integrated circuit includes depositing a barrier layer on a dielectric layer having a trench formed therein, depositing an adhesion layer on the...
7553757 Semiconductor device and method of manufacturing the same  
An interlayer insulator includes a first interlayer insulator and a second interlayer insulator formed on the first interlayer insulator and having a property of preventing diffusion of copper. A...
7550328 Method for production of thin-film semiconductor device  
Disclosed herein is a method for production of a thin-film semiconductor device which includes, a first step to form a gate electrode on a substrate, a second step to form a gate insulating film of...
7547972 Laminated structure, very-large-scale integrated circuit wiring board, and method of formation thereof  
The laminated structure includes a substrate of low dielectric constant material of silicon compound and an electroless copper plating layer laminated thereon with a barrier layer. The barrier...
7547629 Ferroelectric capacitor and its manufacturing method and ferroelectric memory device  
A method for manufacturing a ferroelectric capacitor includes steps of: (a) forming a first crystalline barrier layer; (b) forming a second crystalline barrier layer composed of nitride by...
7541269 Method of forming tungsten polymetal gate having low resistance  
A tungsten polymetal gate is made by forming a gate insulation layer and a polysilicon layer on a semiconductor substrate; depositing a barrier layer on the polysilicon layer; depositing a tungsten...
7531901 Metal interconnection of semiconductor device and method for forming the same  
A metal interconnection of a semiconductor device and a method for forming the same include a diffusion barrier having favorable EM (electro migration) and SM (stress induced migration) properties,...
7531451 SIP semiconductor device and method for manufacturing the same  
A System In Package (SIP) semiconductor device and a method for manufacturing a SIP device. A TiSiN film may be used as a diffusion barrier film for metal wiring in a SIP semiconductor device. A...
7524761 Method for manufacturing semiconductor device capable of reducing parasitic bit line capacitance  
A semiconductor memory device is manufactured by: forming a hole by etching an interlayer insulation film formed over a semiconductor substrate; forming a barrier film over the interlayer...
7524749 Metallization method of semiconductor device  
A method for forming a metallization contact in a semiconductor device includes (a) forming an insulating layer on a semiconductor substrate including an active device region or a lower metal wire;...
7524724 Method of forming titanium nitride layer and method of fabricating capacitor using the same  
A method of fabricating a storage capacitor includes depositing a first titanium nitride layer on a dielectric layer using a chemical vapor deposition technique or an atomic layer deposition...
7521356 Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds  
The present invention provides atomic layer deposition systems and methods that include at least one compound of the formula (Formula I): Ta(NR 1 )(NR 2 R 3 ) 3 , wherein each R 1 , R 2 , and R 3 ...
7510956 MOS device with multi-layer gate stack  
Methods and apparatus are provided for semiconductor devices. The apparatus comprises a substrate having therein a source region and a drain region separated by a channel region extending to a...
7504333 Method of forming bit line of semiconductor device  
A method of forming a conductive structure (e.g., bit line) of a semiconductor device includes forming a barrier metal layer on a semiconductor substrate in which structures are formed. An...
7504287 Methods for fabricating an integrated circuit  
A method is provided for fabricating a semiconductor device which includes a first contact point and a second contact point located above the first contact point. A first material layer is...
7501295 Method of fabricating a reflective electrode for a semiconductor light emitting device  
A process is disclosed for forming a reflective electrode on a semiconductor light emitting device, the light emitting device having an active layer for generating light and a cladding layer in...
7498261 Method and apparatus for forming metal film  
A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The...
7494917 Method for forming an electrical interconnection providing improved surface morphology of tungsten  
In a fabrication method for forming an electrical interconnection of CVD tungsten film, a contact hole is formed in a dielectric layer. A lower conductive layer is formed in the contact hole and...
7491643 Method and structure for reducing contact resistance between silicide contact and overlying metallization  
A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by...
7485516 Method of ion implantation of nitrogen into semiconductor substrate prior to oxidation for offset spacer formation  
A method of formation of integrated circuit devices includes forming a gate electrode stack over a portion of a semiconductor. The stack includes a gate dielectric layer with a gate electrode...
7482276 Semiconductor device and method of manufacturing the same  
A semiconductor device and method of manufacturing same, capable of preventing the material of a barrier metal layer from penetrating into an intermetallic insulating layer are provided. In an...
7482261 Interconnect structure for BEOL applications  
A semiconductor interconnect structure is provided that includes a new capping layer/dielectric material interface which is embedded inside the dielectric material. In particular, the new interface...
7479451 Display device manufacturing method preventing diffusion of an aluminum element into a polysilicon layer in a heating step  
The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is...
7476605 Method of manufacturing semiconductor device  
A method for manufacturing a semiconductor device is provided, which comprises forming a first metal wiring layer above a semiconductor substrate, forming an inorganic insulating film above the...
7473640 Reactive gate electrode conductive barrier  
A method, and corresponding transistor structure are provided for protecting the gate electrode from an underlying gate insulator. The method comprises: forming a gate insulator overlying a channel...
7473637 ALD formed titanium nitride films  
The use of atomic layer deposition (ALD) to form a conductive titanium nitride layer produces a reliable structure for use in a variety of electronic devices. The structure is formed by depositing...
7465659 Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)  
Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also...
7465635 Method for manufacturing a gate sidewall spacer using an energy beam treatment  
The present invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among other steps, may include forming a gate structure over...
7459786 Semiconductor device  
A reliable semiconductor device having a multilayer wiring structure formed of copper as a main component material, which constrains occurrence of voids caused by stress migration. In the...
7459394 Methods of manufacturing semiconductor devices  
Methods of manufacturing semiconductors are disclosed. One example method includes forming a trench through a dual damascene process, depositing a barrier metal layer on the overall surface, and...
7459387 Semiconductor electronic device and method of manufacturing thereof  
A semiconductor electronic device includes a die of semiconductor material and a support. The die of semiconductor material includes an integrated electronic circuit and a plurality of contact pads...
7452807 Method of forming a metal wiring in a semiconductor device  
Example embodiments of the present invention relate to a method of forming a metal wiring in a semiconductor device. Other example embodiments of the present invention relate to a method of forming...
7446034 Process for making a metal seed layer  
An exemplary method includes: providing a substrate with an exposed metal surface, performing a reducing process on the metal surface, and transferring the substrate in an inert or reducing ambient...
Matches 1 - 50 out of 939 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >