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6156644 |
Method for forming interconnects for semiconductor devices using reaction control layers, and interconnects formed thereby
Interconnects for semiconductor devices are formed by forming a reaction control layer on a lower conductive layer of a semiconductor device, forming a reactive metal layer on the reaction control...
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6153539 |
Liquid phase deposition method for growing a titanium dioxide on a gallium arsenide substrate
A liquid phase deposition method for growing a titanium dioxide on the gallium arsenide substrate is disclosed. Wherein the solution of hexafluorotitanic acid (H 2 TiF 6 ) is added with nitric...
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6150257 |
Plasma treatment of an interconnect surface during formation of an interlayer dielectric
The present invention relates to the formation of an ILD layer while preventing or reducing oxidation of the upper surface of a metallic interconnect. Avoidance of oxidation of the upper surface of...
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6150259 |
Method for forming a metal plug
A method for forming a metal plug is provided. The method is used to form a metal plug without a hole on a glue/barrier layer within a trench when the glue/barrier layer has been formed for a...
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6147001 |
Method of manufacturing semiconductor integrated circuit device
A method of manufacturing a semiconductor integrated circuit wherein a patterned wafer polishing machine for uniformly polishing a surface by chemical mechanical polishing is utilized which is...
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6146993 |
Method for forming in-situ implanted semiconductor barrier layers
A method is provided for forming barrier layers in channel or via openings of semiconductors by using in-situ nitriding of barrier metals (Ta, Ti, or W) after they have been deposited in channel...
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6140223 |
Methods of forming contacts for integrated circuits using chemical vapor deposition and physical vapor deposition
A thin conductive layer is formed on a contact hole bottom and on a contact hole sidewall in an insulating layer on an integrated circuit substrate, and then both chemical vapor deposition and...
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6139700 |
Method of and apparatus for forming a metal interconnection in the contact hole of a semiconductor device
A method and an apparatus of fabricating a metal interconnection in a contact hole of a semiconductor device reduces contact resistance and improves step coverage. A contact hole is opened in an...
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6140224 |
Method of forming a tungsten plug
A dielectric layer and a polishing stop layer are respectively formed over a substrate. A glue layer composed of titanium (Ti) is formed along the surface of the dielectric layer. The Ti layer...
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6136677 |
Method of fabricating semiconductor chips with silicide and implanted junctions
A method of fabricating a semiconductor device includes the steps of providing a semiconductor chip (10) with a memory area (22) and a logic area (26). The memory area (22) and the logic area (26)...
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6136697 |
Void-free and volcano-free tungsten-plug for ULSI interconnection
The present invention is a method of fabricating void-free and volcano-free tungsten plugs. A silicon film was formed over contact hole surfaces for restricting the reflow of a dielectric layer. A...
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6136691 |
In situ plasma clean for tungsten etching back
An insulating layer is formed on a semiconductor wafer. A titanium layer (Ti) is formed on the insulating layer. A titanium nitride (TiN) layer is formed on the Ti layer to act as a barrier layer....
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6136682 |
Method for forming a conductive structure having a composite or amorphous barrier layer
A method for forming an improved copper barrier layer begins by providing a silicon-containing layer (10). A physical vapor deposition process is then used to form a thin tantalum nitride amorphous...
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6136670 |
Semiconductor processing methods of forming contacts between electrically conductive materials
In one aspect, the invention includes a semiconductor processing method of forming a contact between two electrically conductive materials comprising: a) forming a first conductive material over a...
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6136698 |
Method of increasing contact area of a contact window
A method is provided to increase the contact area of a contact window. In this method, the contact area is mainly increased by a concavity which is formed by first forming a thin oxide layer in the...
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6133145 |
Method to increase the etch rate selectivity between metal and photoresist via use of a plasma treatment
A process for fabricating an aluminum based interconnect structure, using a plasma treated photoresist shape as an etch mask, has been developed. The process features treating a photoresist shape,...
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6133122 |
Method of fabricating semiconductor device for preventing rising-up of siliside
Disclosed is a manufacturing method of a semiconductor device which comprises which comprises an element isolation region formation step; a side wall formation step; a diffusion layer formation...
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6133142 |
Lower metal feature profile with overhanging ARC layer to improve robustness of borderless vias
Reliable vias are formed by providing an adequate landing area without increasing the size of the underlying feature. Embodiments include forming a lower metal feature with an ARC layer extending...
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6130155 |
Method of forming metal lines in an integrated circuit having reduced reaction with an anti-reflection coating
A method of forming metal lines is disclosed. The method comprises the steps of: forming a composite metal layer over a wafer, the composite metal layer having a top layer of titanium/titanium...
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6130154 |
Semiconductor device and fabrication process thereof
A semiconductor device with satisfactory bonding avility of a plasma SiOF oxide layer on a wiring and satisfactory burying ability for buring wiring space portions. The semiconductor device is...
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6127257 |
Method of making a contact structure
An improved contact structure and process for forming an improved contact structure for a semiconductor device. A metal (14) is formed on a first metal layer (12) positioned on a substrate (10) The...
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6127266 |
Stabilization of the interface between tiN and A1 alloys
A method of manufacturing a semiconductor device which includes an interface between a metal layer and a barrier layer of a nitride of a refractory metal, comprising the steps of depositing the...
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6121132 |
Method for reducing stress on collimator titanium nitride layer
A method for reducing the stress on a titanium nitride layer formed by collimator sputtering. On a semiconductor substrate, an insulated oxide layer is formed. A trench is formed in the insulated...
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6117768 |
Void-free tungsten-plug contact for ULSI interconnection
A doped oxide and an undoped oxide are formed on a substrate. Then, the substrate is annealed to re-flow the doped oxide layer. The doped oxide is then etched back. Next, a contact hole is created...
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6114238 |
Self-aligned metal nitride for copper passivation
A method of fabricating metallization. A metal nitride layer is formed on the exposed surface of the metal layer. The metal nitride layer is used as a barrier layer to prevent short circuit, which...
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6114243 |
Method to avoid copper contamination on the sidewall of a via or a dual damascene structure
A new method to prevent copper contamination of the intermetal dielectric layer during via or dual damascene etching by forming a capping layer over the first copper metallization is described. A...
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6110821 |
Method for forming titanium silicide in situ
Titanium is sputtered in an ionized metal plasma sputtering chamber to form titanium silicide in situ in the bottom of openings onto silicon in a series of steps that change the temperature and...
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6107193 |
Completely removal of TiN residue on dual damascence process
A process for completely removing TiN residue existing outside contact windows is described: electrical elements are formed on a silicon substrate, an insulating layer is then formed over the...
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6107199 |
Method for improving the morphology of refractory metal thin films
A method of producing a smooth surface for a film of refractory metallic material is realized by placing a substrate in a CVD reactor; initiating deposition of a layer of two phase material via...
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6107190 |
Method of fabricating semiconductor device
There is provided a method of fabricating a semiconductor including the steps, in this order, of (a) forming an interlayer insulating film on a semiconductor substrate, (b) forming a first TiN film...
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6107170 |
Silicon sensor contact with platinum silicide, titanium/tungsten and gold
An improved method for forming a metal contact for a silicon sensor. First, platinum is deposited over a contact area. Then the platinum is sintered to form platinum silicide. Subsequently,...
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6100186 |
Method of selectively forming a contact in a contact hole
A contact is selectively formed in a contact hole in an insulating layer deposited on a silicon substrate. The contact hole exposes a portion of the substrate. The contact is formed by selectively...
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6099701 |
AlCu electromigration (EM) resistance
A method of manufacturing a Al-Cu line stack comprised of Ti-rich TIN, TiN, Ti-rich TiN, Al-Cu, Ti-rich TiN, TiN layers. A key feature of the invention is the sputtering of the Ti-rich TiN layers...
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6100200 |
Sputtering process for the conformal deposition of a metallization or insulating layer
The present invention is a method related to the deposition of a metallization layer in a trench in a semiconductor substrate. The focus of the invention is to sequentially perform heated...
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6100184 |
Method of making a dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer
A technique for fabricating a dual damascene interconnect structure using a low dielectric constant material as a dielectric layer or layers. A low dielectric constant (low-.di-elect cons.)...
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6096565 |
Multi-layer glass ceramic module with superconductor wiring
A multilayer ceramic substrate electronic component is provided having high temperature superconductor material circuitry. The high temperature superconductor material is preferably...
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6096637 |
Electromigration-resistant via structure
A method is described for forming an electromigration-resistant (ER) intermetallic region beneath and adjacent a conductive plug in a via. Preferably the ER region is formed of a sintered...
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6093642 |
Tungsten-nitride for contact barrier application
A contact and method of forming a contact. A layer of titanium (112) is deposited. Then, a RTP anneal is performed to react the titanium layer (112) with underlying silicon (112) to form a silicide...
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6093638 |
Method of forming an electrical contact in a substrate
A TiN x layer is formed by disposing a substrate (18) in a chamber (12). A first reactant gas (40) comprising Ti, a second reactant gas (42) and a third reactant gas (44) comprising N are...
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6090709 |
Methods for chemical vapor deposition and preparation of conformal titanium-based films
Titanium and titanium nitride layers can be produced by chemical vapor deposition (CVD) processes conducted at temperatures below 475° C. The layers may serve as diffusion and adhesion barriers...
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6087212 |
Method for forming a storage node in a semiconductor memory
In a process for forming a storage node electrode in the COB structure DRAM, after a titanium nitride film is formed on a surface of a second interlayer insulator film, a node contact hole is...
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6087253 |
Method of forming landing plugs for PMOS and NMOS
Contact holes are formed in a dielectric layer. An undoped polysilicon layer is formed on the dielectric layer and along the surface of the contact holes. A first photoresist is patterned on the...
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6083789 |
Method for manufacturing DRAM capacitor
A method for forming a DRAM capacitor whose titanium nitride electrode is fabricated in a sequence of steps that results in a good step-coverage. Moreover, contamination of the titanium nitride...
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6083830 |
Process for manufacturing a semiconductor device
A process for producing a semiconductor device comprising the steps of forming a titanium film having a (002) orientation, forming a titanium nitride film on the titanium film to such a thickness...
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6080659 |
Method to form an alignment mark
A method to form a better quality of an alignment pattern includes several steps, first starts from forming a polysilicon layer on a semiconductor substrate. Next, most of a central portion of the...
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6077774 |
Method of forming ultra-thin and conformal diffusion barriers encapsulating copper
A method is provided for forming thin diffusion barriers in a semiconductor device (10). In one embodiment of the invention, a metal precursor gas is introduced to a surface of a dielectric layer....
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6077779 |
Multi-step deposition to improve the conformality of ionized PVD films
Methods are disclosed to provide a low-cost method of producing a refractory liner in submicron vias or trenches applying ionized metal plasma using physical vapor deposition (PVD). The refractory...
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6071811 |
Deposition of titanium nitride films having improved uniformity
I have found that in order to improve sheet resistance uniformity of metal nitride films, such as titanium nitride, the chamber must be operated at low pressure. The nitrogen gas flow rates...
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6066554 |
Method of manufacturing three elemental diffusion barrier layer
A three elemental compound for diffusion barrier layer having a superior diffusion barrier characteristics manufactured by forming the compound between the silicon diffused into the diffusion...
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6066366 |
Method for depositing uniform tungsten layers by CVD
Within wafer and wafer-to-wafer uniformity of W layers deposited by CVD, employing N 2 for increased reflectivity, is significantly improved by omitting N 2 during at least a portion of...
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