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6645855 |
Method for fabricating an integrated semiconductor product
A method fabricates an integrated semiconductor product. The first step is providing a semiconductor wafer that has preformed semiconductor components. The next step is forming at least one...
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6645875 |
Method of processing metal and method of manufacturing semiconductor device using the metal
When a barrier metal disposed on a thin film resistor material is wet-etched to expose the underlying thin film resistor material as a thin film resistor, the wet etching is performed at first and...
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6642146 |
Method of depositing copper seed on semiconductor substrates
The present invention pertains to methods for depositing a metal seed layer on a wafer substrate having a plurality of recessed features. Methods of the invention include at least two operations. A...
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6638861 |
Method of eliminating voids in W plugs
Reliable contacts/vias are formed by filling an opening in a dielectric layer with W and laser thermal annealing to eliminate or significantly reduce voids. Embodiments include depositing W to fill...
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6638852 |
Structure and method for preventing barrier failure
A structure and method to prevent barrier failure is provided. The present invention replaces a standard titanium-nitride (TiN) barrier metal layer with two separately-formed TiN layers. The two...
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6638854 |
Semiconductor device and method for manufacturing the same
In order to suppress an increase of depressions, etc. to occur on a copper based alloy layer during polishing when a copper based alloy inlaid wiring is formed with the damascene method in grooves...
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6635568 |
Refractory metal roughness reduction using high temperature anneal in hydrides or organo-silane ambients
An embodiment of the present invention teaches a method used in a semiconductor fabrication process to form a memory cell in a semiconductor device comprising the steps of: subjecting a layered...
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6632738 |
Method of manufacturing semiconductor device
An interlayer insulating film and a first via connected to a diffusion layer in a MOS transistor are formed on the diffusion layer. Then, a low dielectric constant film for a first layer copper...
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6632736 |
Method of forming low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer
A contact structure incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe 2 ) 4 , as...
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6624062 |
Wiring structure in semiconductor device and method for forming the same
A method for forming a wiring structure in a semiconductor device, comprising the steps of: (a) forming an insulating layer of a low dielectric constant material having a relative dielectric...
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6623985 |
Structure of and manufacturing method for semiconductor device employing ferroelectric substance
A semiconductor device and method for manufacturing the same in which the semiconductor device includes a substrate; an MOS transistor formed on the substrate; an interlayer dielectric provided on...
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6624065 |
Method of fabricating a semiconductor device using a damascene metal gate
A method of fabricating a semiconductor device using a damascene metal gate including the steps of forming a damascene gate oxide layer and a damascene gate electrode on a semiconductor substrate,...
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6624073 |
Optimized TaCN thin film diffusion barrier for copper metallization
A new method of forming a tantalum carbide nitride diffusion barrier layer having optimized nitrogen concentration for improved thermal stability is described. A contact region is provided in a...
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6617235 |
Method of manufacturing Group III-V compound semiconductor
The present invention provides for a method of manufacturing a Group III-V compound semiconductor, which grows a nitrogen-contained Group III-V compound semiconductor of the p-type conductivity,...
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6610596 |
Method of forming metal interconnection using plating and semiconductor device manufactured by the method
A method is provided for forming a metal interconnection using a plating process, which can improve the throughput and reliability of semiconductor devices by decreasing the required polishing in a...
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6611018 |
SEMICONDUCTOR PROCESSING METHODS OF FORMING INTEGRATED CIRCUITRY MEMORY DEVICES, METHODS OF FORMING CAPACITOR CONTAINERS, METHODS OF MAKING ELECTRICAL CONNECTION TO CIRCUIT NODES AND RELATED INTEGRATED CIRCUITRY
In one aspect, the invention provides a method of forming an integrated circuitry memory device. In one implementation, a conductive layer is formed over both memory array areas and peripheral...
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6607976 |
Copper interconnect barrier layer structure and formation method
A method for forming a tungsten-containing copper interconnect barrier layer (e.g., a tungsten [W] or tungsten-nitride [W X N] copper interconnect barrier layer) on a substrate with a high (e.g.,...
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6602782 |
Methods for forming metal wiring layers and metal interconnects and metal interconnects formed thereby
Methods of forming a metal interconnects include forming an electrically insulating layer having a contact hole therein, on a substrate. A step is also performed to form an electrically conductive...
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6596630 |
Method of cleaning a silicon substrate after blanket depositing a tungsten film by dipping in a solution of hydrofluoric acid, hydrochloric acid, and/or ammonium hydroxide
A semiconductor device manufactured by cleaning without dissolving W, Ti, or TiN even if these metallic materials are exposed on the substrates to be cleaned, and a method for manufacturing such a...
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6596629 |
Method for forming wire in semiconductor device
A method for forming a wire in a semiconductor device, in forming a titanium film and a titanium nitride film as a barrier metal layer, which can deposit a titanium film and a titanium nitride film...
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6593219 |
Method for fabricating electrode structure and method for fabricating semiconductor device
A first metal film of a first metal is deposited on a silicon-containing film containing silicon as a principal constituent, and a second metal film of a nitride of a second metal is deposited on...
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6593149 |
Manufacturing method for ferroelectric thin film using sol-gel process
A method for manufacturing a ferroelectric thin film using a sol-gel process comprising the steps of dissolving a Pb precursor using a solvent to prepare a Pb solution and stabilizing a Zr...
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6586331 |
Low sheet resistance of titanium salicide process
A method for establishing low sheet resistance for the Titanium Salicide process that teaches a C-54 TiSi x process by means of an additional vacuum bake. The present invention teaches an...
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6583038 |
Polycide structure and method for forming polycide structure
A polycide structure for use in an integrated circuit comprises a silicon layer; a barrier layer comprising ZSix where x is greater than two and Z is chosen from the group consisting of tungsten,...
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6576526 |
Darc layer for MIM process integration
A new processing sequence is provided for the creation of a MIM capacitor. The process starts with the deposition of a first layer of metal. Next are deposited listed, a thin layer of metal, a...
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6576546 |
Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications
An embodiment of the instant invention is a method of forming a conductive barrier layer on a dielectric layer, the method comprising the steps of: providing the dielectric layer ( 112 of FIG. 7...
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6576563 |
Method of manufacturing a semiconductor device employing a fluorine-based etch substantially free of hydrogen
The present invention provides a method of manufacturing a semiconductor device. In one embodiment, the method includes forming a positive relief structure from a material located on a substrate,...
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6573185 |
Manufacture of a semiconductor device
The present method of manufacturing a semiconductor device has a step of forming a metal film on the surface of a group of semiconductor wafers by bringing the internal temperature of a chamber of...
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6569759 |
Semiconductor device having interconnection implemented by refractory metal nitride layer and refractory metal silicide layer and process of fabrication thereof
A semiconductor integrated circuit device is implemented by circuit components and a multi-layered wiring structure, and titanium nitride is used for a part of the integrated circuit such as a...
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6562708 |
Method for incorporating silicon into CVD metal films
A semiconductor device including a silicon-based substrate with recessed features and a tantalum barrier film having at least about 5% silicon incorporated substantially uniformly throughout the...
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6559050 |
Process for high thermal stable contact formation in manufacturing sub-quarter-micron CMOS devices
A conducting plug/contact structure for use with integrated circuit includes a tungsten conducting plug formed in the via with a tungsten-silicon-nitride (WSi Y N Z ) region providing the interface...
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6558963 |
Method and system for controlling the plasma treatment of a titanium nitride layer formed by a chemical vapor deposition process
In general, the present invention is directed to a method of forming titanium nitride layers. In one illustrative embodiment, the method comprises forming a layer of titanium nitride by a chemical...
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6555470 |
Method of manufacturing a semiconductor device with metallization layers interconnected by tungsten plugs
Method of making a semiconductor device, in which method a first layer of silicon oxide ( 10 ) is deposited on a surface ( 2 ) of a silicon body ( 1 ), which layer is then provided with contact...
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6551929 |
Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the...
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6551920 |
Semiconductor device and fabrication method thereof
A semiconductor device includes first and second conductive layers which are electrically connected to each other through a contact plug. A first insulating film is formed on the first conductive...
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6548388 |
Semiconductor device including gate electrode having damascene structure and method of fabricating the same
A gate electrode conductive layer is formed on an active region that is recessed relative to field oxide layers so as to define a damascene structure. The gate electrode conductive layer is formed...
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6548377 |
Method for forming a line of semiconductor device
A method for forming a line of a semiconductor device is provided, which improves the life span of the line and its reliability by improving resistance to electromigration (EM). The method for...
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6548398 |
Production method of semiconductor device and production device therefor
A manufacturing method of a semiconductor device of the invention is a method of manufacturing a semiconductor device by forming a plurality of films on an insulating layer which has a surface in...
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6541374 |
Method of depositing a diffusion barrier for copper interconnection applications
The present invention pertains to methods for forming diffusion barrier layers in the context of integrated circuit fabrication. Methods of the invention allow selective deposition of a...
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6537621 |
Method of forming a titanium film and a barrier film on a surface of a substrate through lamination
A method for forming a titanium film and a titanium nitride film on a surface of a substrate by lamination, by which contamination of the substrate due to the by-product is suppressed and the...
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6534398 |
Method of forming metal layer(s) and/or antireflective coating layer(s) on an integrated circuit
A method of forming metallic layers on a substrate includes the steps of forming a first layer including a first metal on the substrate; cooling the first layer for a period of time sufficient to...
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6531392 |
Method of forming a thin film transistor array panel using photolithography techniques
A gate wire is formed on an insulating substrate by a photolithography process using the first mask, and a gate insulating layer and a semiconductor layer are sequentially deposited. Then, an ohmic...
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6528409 |
Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
For fabricating an interconnect structure within an interconnect opening formed within a porous dielectric material, the interconnect opening is initially formed within a low-K precursor material...
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6524956 |
Method for controlling the grain size of tungsten films
A chemical vapor deposition process for depositing tungsten films having small grain size is provided. The process involves depositing a nucleation layer having very small nuclei that are closely...
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6524946 |
Method of fabricating a semiconductor device having a contact hole
An insulating film for embedding conductive portions therein is formed so as to represent convex configurations corresponding to each top of convex conductive portions. The insulating film is...
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6521528 |
Semiconductor device and method of making thereof
A semiconductor device includes a semiconductor substrate having a first and a second region, a first wiring layer including a lower layer having polycrystal silicon portions including impurities...
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6518153 |
Method for making gate electrodes of low sheet resistance for embedded dynamic random access memory devices
A method of making embedded DRAM devices having integrated therein a gate electrode of low sheet resistance satisfying the requirement of high performance logic circuitry is provided. The gate...
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6506668 |
Utilization of annealing enhanced or repaired seed layer to improve copper interconnect reliability
A method of forming interconnects on a semiconductor chip is disclosed which comprises the steps of: depositing a barrier layer and a copper seed layer on the semiconductor chip; depositing on the...
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6500742 |
Construction of a film on a semiconductor wafer
The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of...
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6498093 |
Formation without vacuum break of sacrificial layer that dissolves in acidic activation solution within interconnect
For filling an interconnect opening of an integrated circuit formed on a semiconductor substrate, an underlying material is formed at any exposed walls of the interconnect opening. A sacrificial...
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