Matches 601 - 650 out of 721 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
Match Document Document Title
5534461 Method for manufacturing a semiconductor device having planarized wiring  
A first contact hole and a second contact hole are formed in an insulating film on the surface of a substrate, and thereafter a blanket tungsten (W) layer is deposited on the substrate surface,...
5527739 Process for fabricating a semiconductor device having an improved metal interconnect structure  
A metal interconnect structure includes copper interface layers (24, 30) located between a refractory metal via plug (28), and first and second metal interconnect layers (16, 32). The copper...
5527736 Dimple-free tungsten etching back process  
A new method of metallization using a dimple-free tungsten plug is described. Semiconductor device structures are formed in and on a semiconductor substrate. An insulating layer is deposited...
5525543 Method of making a semiconductor device using a titanium-rich silicide film  
In a method of forming an adhesive layer for a blanket layer filling a contact hole in a semiconductor device, a Ti film, Ti-rich TiN film or a TiSi x (x being 1.1 to 1.8) film is formed, and then...
5522520 Method for forming an interconnection in a semiconductor device  
An interconnection in a semiconductor device is made of a conductive laminate including a Ti film, a TiN film and an aluminium alloy film consecutively formed on a SiO 2 film grown on a Si...
5523259 Method of forming metal layers formed as a composite of sub-layers using Ti texture control layer  
In an integrated circuit, an opening (e.g., via or window) is filled with an Al-based plug which has essentially a <111> orientation and comprises at most three grains. These characteristics...
5516726 Method of manufacturing local interconnection for semiconductors  
A process, compatible with bipolar and CMOS processes, for making local interconnection of adjacent devices on a semiconductor substrate is disclosed. An electrically insulating etch stop layer is...
5512516 Contact structure for connecting an electrode to a semiconductor device and a method of forming the same  
A contact structure for connecting a semiconductor device to a wiring electrode includes a semiconductor layer forming a part of the semiconductor device. A first contact layer of reduced...
5506177 Fabrication process for multilevel interconnections in a semiconductor device  
After forming lower level wiring and plasma oxide layer, SOG film is applied by applying a solution containing hydrogen silsesquioxane as primary component under rotation. Pre-baking of the SOG...
5502005 Production method of semiconductor device having a wiring layer containing gold  
A production method of a semiconductor device which has a first insulator film formed directly or through at least one layer on a semiconductor substrate, a wiring film containing gold (Au) and...
5498569 Layered local interconnect compatible with integrated circuit ferroelectric capacitors  
A method of forming a local interconnect for a ferroelectric memory cell includes the steps of simultaneously opening top electrode and source/drain contacts to the ferroelectric memory cell,...
5484747 Selective metal wiring and plug process  
A structure and method are provided for forming a plug contact and a metal line pattern in a semiconductor device. A contact hole is etched through a first dielectric layer. A second dielectric...
5480836 Method of forming an interconnection structure  
A semiconductor integrated circuit device has an interconnection structure in which multilayer aluminum interconnection layers are connected through connection holes. A first aluminum...
5478773 Method of making an electronic device having an integrated inductor  
An electronic device (10) comprises a copper integrated inductor (11) overlying other solid state components (31) of the device (10). Preferably, the copper inductor (11) is formed of plated copper...
5470789 Process for fabricating integrated circuit devices  
A process for fabricating an integrated circuit device comprises a first step of forming an opening in an insulating layer formed on a substrate, a second step of depositing a copper layer on the...
5470788 Method of making self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration  
A method of providing interconnections to a semiconductor integrated chip designed to eliminate electromigration. The method includes the steps of forming an interconnection with segments of Al...
5447599 Self-aligned process for capping copper lines  
The present invention features a process and a resulting article in which copper-based multilevel interconnects are fabricated. The copper-based multilevel interconnect formed by the inventive...
5429989 Process for fabricating a metallization structure in a semiconductor device  
A process for fabricating a metallization structure includes the formation of an interlayer (20) using an MOCVD deposition process. A metal-organic precursor, having as one component tungsten, is...
5424246 Method of manufacturing semiconductor metal wiring layer by reduction of metal oxide  
According to this invention, there is provided a method of forming a groove wiring layer, including the steps of forming a metal oxide film, consisting of a metal oxide having a decrease in...
5422310 Method of forming interconnection in semiconductor device  
To form an interconnection on a substrate, an interconnection material layer is deposited on a surface of a substrate having a step with a base layer of Ti-base metal disposed between the...
5395795 Method for fabricating a semiconductor device  
A process for forming a barrier metal layer and a metal layer on the surface of a contact hole formed on a semiconductor substrate. A titanium and a first titanium nitride layers are sequentially...
5391517 Process for forming copper interconnect structure  
A copper metallization structure and process for the formation of electrical interconnections fabricated with pure copper metal is provided. The metallization structure includes an interface layer...
5391520 Method for forming local interconnect for integrated circuits  
A method for fabrication of local interconnects in an integrated circuit, and an integrated circuit formed according to the same, is disclosed. According to the disclosed embodiment, a first and a...
5385868 Upward plug process for metal via holes  
A method of manufacture of a semiconductor device on a silicon semiconductor substrate comprises formation of a first stress layer on the semiconductor substrate, formation of an interconnect layer...
5380680 Method for forming a metal contact of a semiconductor device  
The present invention provides a method for forming a metal contact in a semiconductor device which improves the reliability of electric wiring by forming a double thin metal layer on the contact...
5376585 Method for forming titanium tungsten local interconnect for integrated circuits  
A method and structure for a titanium tungsten (TiW)/tungsten local interconnect (136) for cells (100) of semiconductor device includes steps and structure resulting from sputtering a titanium...
5369053 Method for patterning aluminum metallizations  
A process for the fine replication of aluminum-based metallizations on semiconductor devices. A layer of material, such as silicon dioxide or oxynitride, that is resistant to the chlorine-based...
5366928 Method of manufacturing a semiconductor device, in which a metal conductor track is provided on a surface of a semiconductor body  
A method of manufacturing a semiconductor device is set forth comprising a semiconductor body (1) having a surface (2) adjoined by a semiconductor region (3) and a field oxide region (4)...
5364817 Tungsten-plug process  
A method of metallization using a tungsten plug is described. A contact hole is opened to the semiconductor substrate through an insulating layer covering semiconductor structures in and on the...
5358901 Process for forming an intermetallic layer  
The present invention includes a process for forming an intermetallic layer and a device formed by the process. The process includes a reaction step where a metal-containing layer reacts with a...
5356659 Metallization for semiconductor devices  
A low temperature chemical vapor deposition process is used to encapsulate aluminum conductors on the surface of a silicon substrate to form bimetallic conductors. The refractory material is...
5354712 Method for forming interconnect structures for integrated circuits  
A method is provided for forming interconnect structures for ULSI integrated circuits. Preferably, a barrier layer of a conductive material which forms a seed layer for metal deposition is provided...
5350711 Method of fabricating high temperature refractory metal nitride contact and interconnect structure  
An interconnect for an integrated circuit in a semiconductor substrate formed on an insulation layer on a surface of the substrate includes a first layer of a refractory metal nitride on said...
5350712 Method of manufacturing a semiconductor IC device having multilayer interconnection structure  
A first insulating layer is formed on the major surface of a semiconductor substrate, and a first-level metal wiring layer is formed on the first insulating layer. A refractory metal layer is...
5346860 Method for fabricating an interconnect structure in an integrated circuit  
A method for fabricating an interconnect structure in an integrated circuit. A first conductive layer is formed over an underlying region in the integrated circuit. The underlying region may be,...
5340775 Structure and fabrication of SiCr microfuses  
A SiCr microfuse, deletable either by electrical voltage pulses or by laser pulses, for rerouting the various components in an integrated circuit, as where redundancy in array structures is...
5332693 Method for manufacturing aluminum wired layer for interconnecting device to device in a semiconductor device  
An improved aluminum wired layer for interconnecting a device to another device and which comprises a plurality of aluminum wired layers formed on an insulating layer of a semiconductor device and...
5312773 Method of forming multilayer interconnection structure  
The disclosure relates to a method of forming a multilayer interconnection structure. The structure is a laminated body having a first conductive layer, a first insulating layer, a second...
5312775 Method of manufacturing semiconductor device having multilayer interconnection structure  
A semiconductor device having a multilayer interconnection structure includes a tungsten plug buried in a contact hole formed in an interlayer insulating film covering first aluminum...
5308793 Method for forming interconnector  
A method of forming an interconnector configuration includes an arrangement for preventing a Ti type barrier metal associated with an silicone oxide type interlayer insulation membrane, from...
5296407 Method of manufacturing a contact structure for integrated circuits  
Manufacturing a void-free metal-filled contact by forming an insulation layer about 2,000 Å thick between a substrate and a first conductive layer, forming openings, or contact holes, through the...
5286675 Blanket tungsten etchback process using disposable spin-on-glass  
A new method of completing a tungsten contact is described. An insulator layer is formed over device structures in and on a semiconductor substrate. The insulator layer is flowed to planarize the...
5284801 Methods of moisture protection in semiconductor devices utilizing polyimides for inter-metal dielectric  
Integrated circuits include a silicon substrate having multiple conductive metallization lines placed thereon and vertically spaced apart from each other by polyimide insulating layers wherein a...
5279980 Method of manufacturing a thin-film semiconductor device having an alpha-tantalum first wiring member  
In a reverse staggered MOS transistor, a gate electrode and a signal wiring connected to the gate electrode consist of a wiring base on the substrate side and an overlying wiring part superposed on...
5275715 Electroplating process for enhancing the conformality of titanium and titanium nitride films in the manufacture of integrated circuits and structures produced thereby  
Highly conformal layers of either titanium, Ti, titanium nitride, TiN, or titanium oxide, TiO x , are formed on exposed surfaces of silicon substrates by first forming a very thin chemical vapor...
5266526 Method of forming trench buried wiring for semiconductor device  
A method of forming a trench buried wiring on a semiconductor device. The method includes the steps of: forming a trench in a first insulating film formed on a semiconductor substrate, by using as...
5238872 Barrier metal contact architecture  
The interconnect system of the present invention is comprised of a TiW metal barrier layer as well as a Ti metal barrier layer deposited on the silicon surface. An anisotropic etch process for the...
5232873 Method of fabricating contacts for semiconductor devices  
A semiconductor device substrate has a major surface on which is located an insulating layer, such as silicon dioxide, having an aperture penetrating through it all the way down to the major...
5232872 Method for manufacturing semiconductor device  
A method of forming metal contact wiring layers in semiconductor devices by cleaning the surface of an exposed substrate of a contact hole formed to the SiO 2 film on a semiconductor substrate...
5231054 Method of forming conductive material selectively  
The CVD W deposition process is observed while changing the substrate temperature, with IR thermometer measurement. The temperature indicated changes with emissivity depending on the surface...
Matches 601 - 650 out of 721 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >