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7622381 |
Semiconductor structure and the forming method thereof
The present invention provides a semiconductor structure and the forming method thereof. The structure includes a substrate having a plurality of stacks; a conformal layer on the substrate and a...
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7619310 |
Semiconductor interconnect and method of making same
An integrated circuit interconnect structure includes a conductive line, a first barrier layer disposed on a bottom surface of conductive line, a second barrier layer disposed on the top surface of...
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RE40983 |
Method to plate C4 to copper stud
A method for plating a second metal directly to a first metal without utilizing a mask. A semiconductor substrate is provided including at least one metal feature and at least one insulating layer...
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7605072 |
Interconnect structure with a barrier-redundancy feature
An interconnect structure that includes a barrier-redundancy feature which is capable of avoiding a sudden open circuit after an electromigration (EM) failure as well as a method of forming the...
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7601636 |
Implementation of a metal barrier in an integrated electronic circuit
A metal barrier is realized on top of a metal portion of a semiconductor product, by forming a metal layer on the surface of the metal portion, with this metal layer comprising a cobalt-based metal...
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7601633 |
Semiconductor device and method for fabricating the same
A semiconductor device and fabricating method thereof are provided. A carbon interconnection line can be formed on an interlayer insulating layer such that the carbon interconnection line is...
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7601624 |
Device comprising an ohmic via contact, and method of fabricating thereof
Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal...
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7601607 |
Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects
An embodiment of the invention shows a process to form a damascene opening preferably without hardmask overhang or dielectric layer undercut/void. The low-k dielectric material can be sandwiched in...
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7598557 |
Semiconductor device and method for fabricating a semicondutor device including first and second hydrogen diffusion preventing films
The semiconductor device comprises a first insulation film 26 formed over a semiconductor substrate 10, first conductor plug 32 buried in a first contact hole 28 a formed down to a...
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7595269 |
Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer
By forming a tin and nickel-containing copper alloy on an exposed copper surface, which is treated to have a copper oxide thereon, a reliable and highly efficient capping layer may be provided. The...
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7592471 |
Tantalum compound, method for producing same, tantalum-containing thin film and method for forming same
A novel tantalum compound, a method for producing the novel tantalum compound, and a method for stably forming a tantalum-containing thin film which contains the desired element. The tantalum...
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7592251 |
Hafnium tantalum titanium oxide films
Embodiments of a dielectric layer containing a hafnium tantalum titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments...
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7585758 |
Interconnect layers without electromigration
A structure and a method for forming the same. The structure includes (a) an interlevel dielectric (ILD) layer; (b) a first electrically conductive line and a second electrically conductive line...
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7582557 |
Process for low resistance metal cap
An exemplary method includes: providing a substrate with exposed metal and dielectric surfaces, performing a reducing process on the metal and dielectric surfaces, and transferring the substrate in...
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7579272 |
Methods of forming low-k dielectric layers containing carbon nanostructures
Methods of forming low-k dielectric layers for use in the manufacture of semiconductor devices and fabricating semiconductor structures using the low-k dielectric material. The low-k dielectric...
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7575998 |
Semiconductor device and metal line fabrication method of the same
Embodiments relate to a method for forming a wiring in a semiconductor device, that may include laminating a conductive layer for wiring formation on a semiconductor substrate, forming a...
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7566654 |
Method for manufacturing a semiconductor device including interconnections having a smaller width
A method for manufacturing a semiconductor device includes the steps of forming an interconnection layer including a top tungsten layer, forming a mask pattern on the tungsten layer, nitriding a...
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7566653 |
Interconnect structure with grain growth promotion layer and method for forming the same
In general, the present invention provides an interconnect structure and method for forming the same. This present invention discloses an interconnect structure includes a Cu seeding layer embedded...
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7566585 |
Semiconductor component and method for production of a semiconductor component
A semiconductor substrate, a semiconductor chip and a semiconductor component with areas composed of a stressed monocrystalline material, and a method for production of a semiconductor component is...
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7563718 |
Method for forming tungsten layer of semiconductor device and method for forming tungsten wiring layer using the same
A semiconductor substrate is loaded into a reaction chamber to form a tungsten layer. A source gas including tungsten (W) is introduced into the reaction chamber to grow a crystal nucleus of the...
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7563705 |
Manufacturing method of semiconductor device
A manufacturing method of a semiconductor device including a step of forming a via hole in an insulation layer including an organic low dielectric film, such as MSQ, SiC, and SiCN, and then...
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7544609 |
Method for integrating liner formation in back end of line processing
A method for integrating cap liner formation in back-end-of-line (BEOL) processing of a semiconductor device includes forming a trench structure within an insulating layer of the semiconductor...
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7541282 |
Methods of forming metal-nitride layers in contact holes
A metal layer can be formed in an integrated circuit by forming a metal-nitride layer in a recess including a first concentration of nitrogen in the metal-nitride layer at a bottom of the recess...
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7538435 |
Wafer structure and bumping process
A wafer structure including a semiconductor substrate, elastic elements, under bump metallurgic (UBM) layers and bumps is provided. The semiconductor substrate has an active surface, and it...
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7534712 |
Semiconductor device and method for fabricating the same
The semiconductor device comprises a silicon substrate 10 having a device region 11 , a transistor including a gate electrode 20 formed in the device region 11 with the gate insulation film ...
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7531902 |
Multi-layered metal line of semiconductor device having excellent diffusion barrier and method for forming the same
A multi-layered metal line of a semiconductor device has a lower metal line and an upper metal line. The upper metal line includes a diffusion barrier, which is made of a stack of a first WN x ...
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7531901 |
Metal interconnection of semiconductor device and method for forming the same
A metal interconnection of a semiconductor device and a method for forming the same include a diffusion barrier having favorable EM (electro migration) and SM (stress induced migration) properties,...
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7528066 |
Structure and method for metal integration
An interconnect structure including a gouging feature at the bottom of one of the via openings and a method of forming the same are provided. In accordance with the present invention, the method of...
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7524755 |
Entire encapsulation of Cu interconnects using self-aligned CuSiN film
A method of forming a barrier layer and cap comprised of CuSiN for an interconnect. We provide an interconnect opening in a dielectric layer over a semiconductor structure. We form a CuSiN barrier...
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7517793 |
Method of forming metal wire in semiconductor device
A method of forming a metal wire in a semiconductor device includes performing a first etching process on an insulating layer formed on a semiconductor substrate to form a trench and an insulating...
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7517782 |
Method of forming a metal layer over a patterned dielectric by wet chemical deposition including an electroless and a powered phase
By performing an electroless deposition and an electro deposition process in situ, highly reliable metallizations may be provided, wherein limitations with respect to contaminations and device...
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7514358 |
Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum...
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7510961 |
Utilization of energy absorbing layer to improve metal flow and fill in a novel interconnect structure
A method for manufacturing an interconnect structure situated on a semiconductor wafer having a substrate assembly thereon. The interconnect structure is formed in a recess such as a trench, a...
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7510959 |
Method of manufacturing a semiconductor device having damascene structures with air gaps
A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. In one embodiment, the method comprises the steps of depositing and patterning a disposable...
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7507666 |
Manufacture method for semiconductor device having concave portions filled with conductor containing Cu as its main composition
An insulating film having a concave portion is formed on a semiconductor substrate. The inner surface of the concave portion and the upper surface of the insulating film are covered with an...
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7507659 |
Fabrication process of a semiconductor device
A method for fabricating a semiconductor device has forming an opening defined by an inner wall surface in an insulation film, covering said inner wall surface with a Cu—Mn alloy layer,...
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7504287 |
Methods for fabricating an integrated circuit
A method is provided for fabricating a semiconductor device which includes a first contact point and a second contact point located above the first contact point. A first material layer is...
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7494921 |
Aluminum metal line of a semiconductor device and method of fabricating the same
A method of forming an aluminum line of a semiconductor device where first A metal thin layer, a first aluminum layer, and a first B metal thin layer are sequentially applied on an interlayer...
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7494916 |
Design structures incorporating interconnect structures with liner repair layers
Design structure embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes an interconnect structure with a liner formed on roughened...
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7491643 |
Method and structure for reducing contact resistance between silicide contact and overlying metallization
A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by...
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7488681 |
Method for fabricating Al metal line
Disclosed is a method for fabricating an Al metal line. The method includes forming an insulating layer on a semiconductor substrate; forming a Ti layer, a bottom TiN layer, an Al layer and a top...
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7485516 |
Method of ion implantation of nitrogen into semiconductor substrate prior to oxidation for offset spacer formation
A method of formation of integrated circuit devices includes forming a gate electrode stack over a portion of a semiconductor. The stack includes a gate dielectric layer with a gate electrode...
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7476615 |
Deposition process for iodine-doped ruthenium barrier layers
An iodine-doped ruthenium barrier layer for use with copper interconnects within integrated circuits is formed using novel, iodine-containing ruthenium precursors in an ALD or CVD process....
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7473638 |
Plasma-enhanced cyclic layer deposition process for barrier layers
In one embodiment, a method for forming a metal-containing material on a substrate is provided which includes forming a metal containing barrier layer on a substrate by a plasma-enhanced cyclical...
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7473637 |
ALD formed titanium nitride films
The use of atomic layer deposition (ALD) to form a conductive titanium nitride layer produces a reliable structure for use in a variety of electronic devices. The structure is formed by depositing...
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7470617 |
Treating a liner layer to reduce surface oxides
In one embodiment, the present invention includes a method for depositing a barrier layer on a substrate having a trench, depositing a liner layer on the barrier layer that includes a surface...
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7468318 |
Method for manufacturing mold type semiconductor device
A method for manufacturing a mold type semiconductor device is provided. The device includes a semiconductor chip having a semiconductor part and a metallic member connecting to the chip via a...
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7465659 |
Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)
Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also...
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7459394 |
Methods of manufacturing semiconductor devices
Methods of manufacturing semiconductors are disclosed. One example method includes forming a trench through a dual damascene process, depositing a barrier metal layer on the overall surface, and...
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7459392 |
Noble metal barrier and seed layer for semiconductors
A barrier and seed layer for a semiconductor damascene process is described. The seed layer is formed from a noble metal with an intermediate region between the barrier and noble metal layers to...
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