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7629251 |
Semiconductor device and a method of manufacturing the same
For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an...
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7629250 |
Method for creating electrically conductive elements for semiconductor device structures using laser ablation processes and methods of fabricating semiconductor device assemblies
A method for forming at least one conductive element is disclosed. Particularly, a semiconductor substrate, including a plurality of semiconductor dice thereon, may be provided and a dielectric...
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7618889 |
Dual damascene fabrication with low k materials
The invention provides methods and apparatuses for fabricating a dual damascene structure on a substrate. First, trench lithography and trench patterning are performed on the surface of a substrate...
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7618860 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device includes forming a first insulating layer over a substrate where a landing contact plug is formed, forming an etch barrier pattern having a line type...
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7615484 |
Integrated circuit manufacturing method using hard mask
An integrated circuit hard mask processing system is provided including providing a substrate having an integrated circuit; forming an interconnect layer over the integrated circuit; applying a...
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7615480 |
Methods of post-contact back end of the line through-hole via integration
Presented are methods of fabricating three-dimensional integrated circuits that include post-contact back end of line through-hole via integration for the three-dimensional integrated circuits. In...
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7605085 |
Method of manufacturing interconnecting structure with vias
First wirings and first dummy wirings are formed in a p-SiOC film formed on a substrate. A p-SiOC film is formed, and a cap film is formed on the p-SiOC film. A dual damascene wiring, including...
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7601641 |
Two step optical planarizing layer etch
Methods are provided for etching during fabrication of a semiconductor device. The method includes initially etching to partially remove a portion of one or more lithographic-aiding layers...
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7601635 |
Method of manufacturing a semiconductor device
For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a...
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7598616 |
Interconnect structure
A structure. The structure includes: a core electrical conductor having a top surface, an opposite bottom surface and sides between the top and bottom surfaces; an electrically conductive liner in...
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7595236 |
Method for production of semiconductor device having a hole extending through a first insulating film, a second insulating film and a third insulating film
A short circuit with an adjacent hole is prevented. By enlarging a hole diameter in the lower part of the hole, a stable storage node is formed without causing a decrease in capacitance. Provided...
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7592253 |
Method for forming a damascene pattern of a copper metallization layer
There is provided a method of forming a damascene pattern including a via and a trench in a damascene process of forming a copper metal interconnection. The method includes forming an interlayer...
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7589014 |
Semiconductor device having multiple wiring layers and method of producing the same
A method of producing a semiconductor device having a plurality of wiring layers forms a first interlayer-insulating film, forms a plurality of grooves for wiring in the first interlayer-insulating...
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7589008 |
Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces having such interconnects are disclosed herein. One aspect of the invention is directed toward a...
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7585762 |
Vapor deposition processes for tantalum carbide nitride materials
Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined...
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7585758 |
Interconnect layers without electromigration
A structure and a method for forming the same. The structure includes (a) an interlevel dielectric (ILD) layer; (b) a first electrically conductive line and a second electrically conductive line...
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7582555 |
CVD flowable gap fill
The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a...
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7576413 |
Packaged stacked semiconductor device and method for manufacturing the same
The present invention provides a packaged stacked semiconductor device which includes bumps serving as external electrode terminals, the bumps being provided on both a front surface and a back...
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7575999 |
Method for creating conductive elements for semiconductor device structures using laser ablation processes and methods of fabricating semiconductor device assemblies
A method for forming at least one conductive element is disclosed. Particularly, a semiconductor substrate, including a plurality of semiconductor dice thereon, may be provided and a dielectric...
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7575998 |
Semiconductor device and metal line fabrication method of the same
Embodiments relate to a method for forming a wiring in a semiconductor device, that may include laminating a conductive layer for wiring formation on a semiconductor substrate, forming a...
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7575996 |
Semiconductor device and method for manufacturing the same
Embodiments relate to a semiconductor device and a method for manufacturing the same. Embodiments may include forming a lower porous oxide layer on a semiconductor substrate having a conductive...
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7572728 |
Semiconductor device and method for manufacturing the same
A semiconductor device and method with a dual damascene pattern uses buffer layers to prevent photoresist layer poisoning due to a reaction between an interlayer dielectric and a photoresist layer....
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7572727 |
Semiconductor formation method that utilizes multiple etch stop layers
The present invention is a semiconductor contact formation system and method. Contact insulation regions are formed with multiple etch stop sublayers that facilitate formation of contacts. This...
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7572682 |
Semiconductor structure for fuse and anti-fuse applications
A fuse/anti-fuse structure is provided in which programming of the anti-fuse is caused by an electromigation induced hillock that is formed adjacent to the fuse element. The hillock ruptures a thin...
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7569485 |
Method for an integrated circuit contact
A process is provided for forming vertical contacts in the manufacture of integrated circuits and devices. The process eliminates the need for precise mask alignment and allows the etch of the...
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7569480 |
Semiconductor devices and methods of fabricating the same
In a method of fabricating a semiconductor device, a first mask pattern is formed on a substrate. The first mask pattern has a first opening formed to expose the substrate. An oxidation barrier...
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7569479 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device capable of preventing a device failure is provided. The method includes: forming an insulating layer with a contact hole on a semiconductor...
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7566648 |
Method of making solder pad
A method of making a solder pad includes providing a substrate having a metal layer formed on it, and applying a photo resist to the metal layer. The photo resist is patterned. A first etching...
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7566643 |
Liquid phase deposition of contacts in programmable resistance and switching devices
A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom composite electrode layer,...
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7563710 |
Method of fabrication of interconnect structures
A method of forming a damascene wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric...
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7563708 |
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes implanting metal ions on a residual interlayer dielectric film in a storage contact hole to the residual dielectric film, thereby reducing...
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7560378 |
Method for manufacturing semiconductor device
A diffusion barrier film, a second insulating film, and a cap film are sequentially laminated on a first insulating film over a substrate. A wiring trench portion is formed extending therethrough...
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7560377 |
Plasma processes for depositing low dielectric constant films
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of...
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7560375 |
Gas dielectric structure forming methods
Methods of forming a gas dielectric structure for a semiconductor structure by using a sacrificial layer. In particular, one embodiment of the invention includes forming an opening for...
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7557035 |
Method of forming semiconductor devices by microwave curing of low-k dielectric films
The invention provides a method of exposing low-k dielectric films to microwave radiation to cure the dielectric films. Microwave curing reduces the cure-time necessary to achieve the desired...
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7557034 |
Semiconductor device and a method of manufacturing the same
For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an...
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7553758 |
Method of fabricating interconnections of microelectronic device using dual damascene process
Method of Fabricating Interconnections of a Microelectronic Device Using a Dual Damascene Process. A method of fabricating interconnections of a microelectronic device includes preparing a...
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7547584 |
Method of reducing charging damage to integrated circuits during semiconductor manufacturing
An integrated circuit die includes thereon a first device region, a second device region and a non-active region. A first implant mask, which covers the second device region and the non-active...
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RE40748 |
Process for producing semiconductor device
A process for producing a semiconductor device for forming a highly reliable wiring structure is provided that solves the problem occurring on using a xerogel or a fluorine resin in an inter level...
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7544608 |
Porous and dense hybrid interconnect structure and method of manufacture
A method for manufacturing a structure includes depositing a dense dielectric over the entire wafer, which includes areas that require low dielectric capacitance and areas that require high...
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7544605 |
Method of making a contact on a backside of a die
A method of forming a semiconductor device includes forming active circuitry over a semiconductor substrate, wherein the semiconductor substrate has a first major surface and a second major surface...
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7544602 |
Method and structure for ultra narrow crack stop for multilevel semiconductor device
An integrated circuit design and a method of fabrication and, more particularly, a semiconductor structure having an ultra narrow crack stop for use in multilevel level devices and a method of...
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7541281 |
Method for manufacturing electronic device
A method for manufacturing an electronic device, in which a via hole and a trench for an interconnect are integrally provided in an interlayer insulating film formed on a substrate, and the via...
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7538027 |
Fabrication method for semiconductor interconnections
There is provided a fabrication method for interconnections, capable of embedding a Cu-alloy in recesses in an insulating film, and forming a barrier layer on an interface between the an insulating...
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7534721 |
Semiconductor device manufacturing device
A process for production of a semiconductor device having a multi-layer wiring of dual damascene structure in a low-dielectric constant interlayer insulating film. The process consists of the...
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7534720 |
Methods of fabricating semiconductor device having slope at lower sides of interconnection hole with etch-stop layer
Methods of manufacturing semiconductor devices having slopes at lower sides of an interconnection hole include an etch-stop layer and an interlayer dielectric layer sequentially formed on a...
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7531450 |
Method of fabricating semiconductor device having contact hole with high aspect-ratio
Provided is a method of fabricating a semiconductor device having a contact hole with a high aspect-ratio. The method includes: sequentially forming a lower pattern and an upper layer on a...
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7531449 |
Method of forming fine patterns using double patterning process
A double pattern method of forming a plurality of contact holes in a material layer formed on a substrate is disclosed. The method forms a parallel plurality of first hard mask patterns separated...
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7531448 |
Manufacturing method of dual damascene structure
A manufacturing method of a dual damascene structure is provided. First, a barrier layer, a first dielectric layer, a second dielectric layer, a cap layer, a metal-containing hard mask layer, a...
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7528493 |
Interconnect structure and method of fabrication of same
A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the...
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