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9041213 Microelectromechanical system devices having through substrate vias and methods for the fabrication thereof  
Methods for the fabrication of a Microelectromechanical Systems (“MEMS”) devices are provided, as are MEMS devices. In one embodiment, the MEMS device fabrication method includes forming at least...
9040359 Molded interposer package and method for fabricating the same  
A method for fabricating a molded interposer package includes performing a first anisotropic etching process to remove a portion of the metal sheet from a top surface of the metal sheet, thereby...
9040414 Semiconductor devices and methods of manufacturing the same  
A semiconductor device and methods directed toward preventing a leakage current between a contact plug and a line adjacent to the contact plug, and minimizing capacitance between adjacent lines.
9041216 Interconnect structure and method of forming the same  
An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a lower conductive feature in a lower low-k (LK) dielectric layer; a...
9040421 Methods for fabricating integrated circuits with improved contact structures  
Methods for fabricating integrated circuits are provided. In an exemplary embodiment, a method for fabricating integrated circuits includes providing a semiconductor substrate disposed with a...
9034753 Method of forming conductive contacts on a semiconductor device with embedded memory and the resulting device  
A method is disclosed that includes forming a conductive logic contact in a logic area of a semiconductor device, forming a bit line contact and a capacitor contact in a memory array of the...
9034754 Method of forming a micro device transfer head with silicon electrode  
A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base...
9032615 Method for forming an electrical connection between metal layers  
A method forms an electrical connection between a first metal layer and a second metal layer. The second metal layer is above the first metal layer. A first via is formed between the first metal...
9030868 Nonvolatile memory device, method for fabricating the same, and method for operating the same  
A nonvolatile memory device includes bit and source lines alternately arranged parallel to each other and even strings and odd strings alternately arranged between the bit lines and the source...
9029260 Gap filling method for dual damascene process  
The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a patterned dielectric layer having a plurality of first openings. The method includes...
9023729 Epitaxy level packaging  
A method of growth and transfer of epitaxial structures from semiconductor crystalline substrate(s) to an assembly substrate. Using this method, the assembly substrate encloses one or more...
9018091 Methods for forming a sensor array package  
Various methods for forming a low profile assembly are described. The low profile assembly may include an integrated circuit. The integrated circuit as well as components associated with the...
9018092 Encapsulated metal interconnect  
A plurality of metal tracks are formed in an integrated circuit die in three metal layers stacked within the die. A protective dielectric layer is formed around metal tracks of an intermediate...
9018089 Multiple step anneal method and semiconductor formed by multiple step anneal  
A method of annealing a semiconductor and a semiconductor. The method of annealing including heating the semiconductor to a first temperature for a first period of time sufficient to remove...
9018752 Circuit boards, methods of fabricating the same, and semiconductor packages including the circuit boards  
Provided is a circuit board, which may include a base layer, an adhesive film, a conductive circuit, and a through via. The adhesive film and the conductive circuit may be provided in plurality to...
9012302 Intrench profile  
A method of etching a recess in a semiconductor substrate is described. The method may include forming a dielectric liner layer in a trench of the substrate where the liner layer has a first...
9006103 Method of manufacturing wiring substrate  
A method of manufacturing a wiring substrate, includes, forming an etching stop layer and a first wiring layer on a supporting member, forming a first insulating layer on the first wiring layer,...
9006039 Fabrication method of packaging substrate, and fabrication method of semiconductor package  
A fabrication method of a packaging substrate includes: providing a metal board having a first surface and a second surface opposite to the first surface, wherein the first surface has a plurality...
9006102 Hybrid TSV and method for forming the same  
Generally, the subject matter disclosed herein relates to conductive via elements, such as through-silicon vias (TSV's), and methods for forming the same. One illustrative method of forming a...
9006911 Method for forming patterns of dense conductor lines and their contact pads, and memory array having dense conductor lines and contact pads  
A method for forming patterns of dense conductor lines and their contact pads is described. Parallel base line patterns are formed over a substrate. Each of the base line patterns is trimmed....
9006902 Semiconductor devices having through silicon vias and methods of fabricating the same  
A semiconductor device is provided having an insulating layer on a semiconductor substrate. The insulating layer and the semiconductor substrate define a through hole penetrating the semiconductor...
9006101 Interconnect structure and method  
An apparatus comprises an interlayer dielectric layer formed on a first side of a substrate, a first metallization layer formed over the interlayer dielectric layer, wherein the first...
9006759 Light-emitting device  
A light-emitting device is provided that aims not to affect a service life and characteristics of light emission and includes two electrodes formed on the upper surface of a substrate with a gap...
8999740 Solar cell  
A solar cell according to an embodiment of the invention includes a substrate configured to have a plurality of via holes and a first conductive type, an emitter layer placed in the substrate and...
8999845 Method for fabricating semiconductor device by damascene process  
A method for fabricating a semiconductor device includes forming a plurality of isolation patterns, isolated from each other by a plurality of trenches, over an underlying structure; forming a...
8999842 Interconnect structure for semiconductor devices  
A method of manufacturing a semiconductor device with a cap layer for a copper interconnect structure formed in a dielectric layer is provided. In an embodiment, a conductive material is embedded...
8999827 Semiconductor device manufacturing method  
A method of manufacturing a semiconductor device, includes: forming a first and second interconnect trenches adjacent to each other in an interlayer insulating film; providing a first interconnect...
8994193 Semiconductor package including a metal plate, semiconductor chip, and wiring structure, semiconductor apparatus and method for manufacturing semiconductor package  
A semiconductor package includes: a metal plate including a first surface, a second surface and a side surface; a semiconductor chip on the first surface of the metal plate, the semiconductor chip...
8987914 Conductor structure and method  
A method of forming an interlayer conductor structure. The method includes forming a stack of semiconductor pads coupled to respective active layers for a circuit. The semiconductor pads include...
8987917 Semiconductor device having non-planar interface between a plug layer and a contact layer  
A semiconductor device is provided, in which it becomes easy to reliably couple a plug conductive layer and a wiring layer located over the plug conductive layer to each other and falling of the...
8987916 Methods and apparatus to improve reliability of isolated vias  
A method for increasing metal density around selected vias in a semiconductor device is provided. The semiconductor device includes a plurality of vias. The method includes: generating a layout...
8987133 Titanium oxynitride hard mask for lithographic patterning  
A vertical stack including a dielectric hard mask layer and a titanium nitride layer is formed over an interconnect-level dielectric material layer such as an organosilicate glass layer. The...
8987134 Reliable interconnect for semiconductor device  
Semiconductor devices and methods of making thereof are disclosed. The semiconductor device includes a substrate prepared with a first dielectric layer formed thereon. The dielectric layer...
8981570 Through-holed interposer, packaging substrate, and methods of fabricating the same  
A through-holed interposer is provided, including a board body, a conductive gel formed in the board body, and a circuit redistribution structure disposed on the board body. The conductive gel has...
8981562 Wiring layout having differently shaped vias  
A method of forming photo masks having rectangular patterns and a method for forming a semiconductor structure using the photo masks is provided. The method for forming the photo masks includes...
8981569 Semiconductor device with low resistance wiring and manufacturing method for the device  
According to one embodiment, a semiconductor device includes an insulating film, a catalytic layer and a wiring layer. The insulating film has a hole. The catalytic layer is formed at the bottom...
8981563 Semiconductor device and method of manufacturing the same  
A semiconductor device includes a first interconnect, a porous dielectric layer formed over the first interconnect, a second interconnect buried in the porous dielectric layer and electrically...
8981493 FinFET and method of fabrication  
An improved finFET and method of fabrication is disclosed. Embodiments of the present invention take advantage of the different epitaxial growth rates of {110} and {100} silicon. Fins are formed...
8975153 Super junction trench metal oxide semiconductor device and method of making the same  
A method for forming a semiconductor device includes forming a hard mask layer over a substrate comprising a semiconductor material of a first conductivity type, and forming a plurality of...
8970046 Semiconductor packages and methods of forming the same  
A semiconductor package may include a substrate including a substrate connection terminal, at least one semiconductor chip stacked on the substrate and having a chip connection terminal, a first...
8969997 Isolation structures and methods of forming the same  
A method of forming of a semiconductor structure has isolation structures. A substrate having a first region and a second region is provided. The first region and the second region are implanted...
8972922 Method for forming an electrical connection between metal layers  
A method includes forming a connection between a first metal layer and a second metal layer. The second metal layer is over the first metal layer. A via location for a first via between the first...
8970018 Differential excitation of ports to control chip-mode mediated crosstalk  
A differential port and a method of arranging the differential port are described. The method includes arranging a first electrode to receive a drive signal, and arranging a second electrode to...
8969193 Method of producing a semiconductor device having an interconnect through the substrate  
A semiconductor substrate (1) is provided on a main surface (14) with an intermetal dielectric (4) including metal planes (5) and on an opposite rear surface (15) with an insulation layer (2) and...
8969194 Backside illuminated image sensor and manufacturing method thereof  
Disclosed is a backside illuminated image sensor including a light receiving element formed in a first substrate, an interlayer insulation layer formed on the first substrate including the light...
8962490 Method for fabricating semiconductor device  
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having an interlayer dielectric (ILD) layer thereon, wherein at least one metal...
8962464 Self-alignment for using two or more layers and methods of forming same  
Embodiments of the present disclosure include self-alignment of two or more layers and methods of forming the same. An embodiment is a method for forming a semiconductor device including forming...
8962474 Method for forming an air gap around a through-silicon via  
Semiconductor devices with air gaps around the through-silicon via are formed. Embodiments include forming a first cavity in a substrate, filling the first cavity with a sacrificial material,...
8962475 Multi-layer circuit substrate fabrication method providing improved transmission line integrity and increased routing density  
An integrated circuit substrate is designed and fabricated with a selectively applied transmission line reference plane metal layer to achieve signal path shielding and isolation, while avoiding...
8962489 Method for etching film containing cobalt and palladium  
Disclosed is a method for etching a film contains cobalt and palladium is provided. A hard mask is provided on the film. The method film includes a process “a” of etching the film by ion sputter...