|
Match
|
Document |
Document Title |
|
|
8183147 |
Method of fabricating a conductive post on an electrode
A method of fabricating a semiconductor device includes: forming a semiconductor chip portion having an electrode on a main surface of a wafer; forming a first resist pattern having a first opening...
|
|
|
8183160 |
Method for manufacturing a semiconductor device and semiconductor device obtainable with such a method
A method for manufacturing a semiconductor device includes providing a patterned hard-mask layer. The hard-mask layer is provided on an exposed surface of one or more layers to be patterned of a...
|
|
|
8183150 |
Semiconductor device having silicon carbide and conductive pathway interface
The present invention provides semiconductor device formed by an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically...
|
|
|
8178977 |
Semiconductor device and method of manufacturing the same
When a through-hole electrode and a rear-surface wire are formed on a rear surface of a chip, a convex portion is formed on the rear surface of the chip due to a rear-surface wiring pad which is a...
|
|
|
8168529 |
Forming seal ring in an integrated circuit die
The formation of a seal ring in a semiconductor integrated circuit (IC) die is described. Through-silicon vias (TSVs) are typically formed in a semiconductor IC die to facilitate the formation of a...
|
|
|
8166650 |
Method of manufacturing a printed circuit board
A method of manufacturing a printed circuit board (PCB) includes of disposing thermal transfer vias and electrical vias through the PCB. The method further includes filling holes of the vias with a...
|
|
|
8164193 |
Metal wiring of semiconductor device and forming method thereof
The present invention relates to a metal wiring of a semiconductor device and a method for the same, and is directed to disclose a technique forming an additional conductive layer within the metal...
|
|
|
8164190 |
Structure of power grid for semiconductor devices and method of making the same
An embodiment of the invention provides a semiconductor structure, which may include a stud of a first conductive material formed inside a dielectric layer; a via of a second conductive material...
|
|
|
8153518 |
Method for fabricating metal interconnection of semiconductor device
In a method for fabricating a metal interconnection of a semiconductor device, a lower interconnection and a lower insulation layer are formed over a semiconductor substrate. An etch stop layer is...
|
|
|
8124521 |
Electrical through contact
A method of fabricating an electrical contact through a through hole in a substrate, wherein the through hole is at least in part filled with a liquid conductive material and the solidified liquid...
|
|
|
8114768 |
Electromigration resistant via-to-line interconnect
A liner-to-liner direct contact is formed between an upper metallic liner of a conductive via and a lower metallic liner of a metal line below. The liner-to-liner contact impedes abrupt...
|
|
|
8110495 |
Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluation
A multilayer wiring structure of a semiconductor device having a stacked structure is arranged to restrain reliability degradation due to stress applied to the region of wiring between opposite...
|
|
|
8110496 |
Method for performing chemical shrink process over BARC (bottom anti-reflective coating)
A structure and a method for forming the same. The method comprises providing a structure including (a) a hole layer, (b) a BARC (bottom antireflective coating) layer on the top of the hole layer,...
|
|
|
8105937 |
Conformal adhesion promoter liner for metal interconnects
A dielectric layer is patterned with at least one line trough and/or at least one via cavity. A metallic nitride liner is formed on the surfaces of the patterned dielectric layer. A metal liner is...
|
|
|
8106518 |
Semiconductor device and method of manufacturing the same
In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a plurality of elements,...
|
|
|
8101516 |
Method of forming contact hole pattern in semiconductor integrated circuit device
A block film is formed on a region which includes a region of an insulating layer where a first hole is to be formed, and in which no second hole is to be formed, and a resist film having openings...
|
|
|
8101496 |
Method of manufacturing ball grid array type semiconductor device
A BGA type semiconductor device having high reliability is offered. A pad electrode is formed on a surface of a semiconductor substrate and a glass substrate is bonded to the surface of the...
|
|
|
8102058 |
Chip package structure and method for fabricating the same
The disclosure provides a chip package structure and method for fabricating the same. The chip package structure includes at least one chip having at least one through via. At least one stress...
|
|
|
8101517 |
Semiconductor device and method for making same
One or more embodiments may relate to a method for making a semiconductor structure, the method including: forming an opening at least partially through a workpiece; and forming an enclosed cavity...
|
|
|
8093151 |
Semiconductor die and method of forming noise absorbing regions between THVS in peripheral region of the die
A semiconductor wafer has a plurality of semiconductor die. A peripheral region is formed around the die. An insulating material is formed in the peripheral region. A portion of the insulating...
|
|
|
8089162 |
Semiconductor device and method for manufacturing the same
In a pad forming region electrically connecting an element forming region to the outside, in which a low dielectric constant insulating film is formed in association with in the element forming...
|
|
|
8084350 |
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes can prevent defects of a semiconductor device due to the deterioration of electro migration (EM)/stress migration (SM) properties of the...
|
|
|
8084142 |
Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of...
|
|
|
8084358 |
Semiconductor device and manufacturing method thereof
In a manufacturing method of a semiconductor device, an insulating film is formed on a first conductive film. By using a mask film having an opening that exposes the insulating film, anisotropic...
|
|
|
8084351 |
Contact structure of a semiconductor device
A method for fabricating a contact of a semiconductor device includes the steps of forming a dielectric layer having a contact hole on a semiconductor substrate, forming an out-gassing barrier...
|
|
|
8080881 |
Contact pad supporting structure and integrated circuit for crack suppresion
The invention provides a contact pad supporting structure. The contact pad supporting structure includes an underlying first conductive plate and an overlying second conductive plate, wherein the...
|
|
|
8072080 |
Connection structure, electro-optical device, and method for production of electro-optical device
The invention provides a connection structure including: a first electro-conductive film that is formed on a substrate; an insulation film that is formed on the first electro-conductive film, an...
|
|
|
8069560 |
Method of manufacturing multilayer wiring board
A manufacturing method of a multilayer wiring board that includes a core board, a wiring layer, and an electrically insulating layer that are stacked on the core board. The manufacturing method...
|
|
|
8062970 |
Production method for semiconductor device
The present invention is a production method for a semiconductor device equipped with a conductive film with predetermined film thickness on a sidewall of a concave portion formed in an insulating...
|
|
|
8058165 |
Semiconductor device and method of manufacturing the same
A method of manufacturing according to an embodiment of the present invention includes forming a seed metal layer 20a on a supporting substrate 70, forming an interconnect layer 10 including an...
|
|
|
8053341 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device includes forming junction area for a bit line contact (BLC) and a junction area for a storage node contact (SNC) by performing ion implantation in a...
|
|
|
8053357 |
Prevention of post CMP defects in CU/FSG process
A common problem associated with damascene structures made of copper inlaid in FSG (fluorinated silicate glass) is the formation of defects near the top surface of the structure. The present...
|
|
|
8053353 |
Method of making connections in a back-lit circuit
A method for forming, on a surface of a thinned-down semiconductor substrate, a contact connected to a metal track of an interconnect stack formed on the opposite surface of the thinned-down...
|
|
|
8034711 |
Bonding structure and fabrication thereof
A bonding structure and the method of fabricating the same are disclosed. The bonding structure of the invention includes a copper-based pad formed in an insulator layer and a protection layer...
|
|
|
8026176 |
Film forming method, plasma film forming apparatus and storage medium
A technique for embedding metal in a microscopic recess provided in the surface of a process object, such as a semiconductor wafer, by plasma sputtering. A film forming step and a diffusion step...
|
|
|
8026167 |
Semiconductor device and method of manufacturing the same
A metal interconnection of semiconductor device and method for fabricating the same is provided. The semiconductor device can include a semiconductor substrate formed with device structures such as...
|
|
|
8026168 |
Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming
The method includes providing a substrate containing a dielectric layer having a recessed feature and forming a aluminum tantalum carbonitride barrier film over a surface of the recessed feature....
|
|
|
8018045 |
Printed circuit board
The present invention has for its object to provide a multilayer printed circuit board which is very satisfactory in facture toughness, dielectric constant, adhesion and processability, among other...
|
|
|
8012864 |
Manufacturing method for interconnection having stress-absorbing layer between the semiconductor substrate and the external connection terminal
A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of...
|
|
|
8008127 |
Method of fabricating an integrated circuit having a multi-layer structure with a seal ring
A plurality of IC regions are formed on a semiconductor wafer, which is cut into individual chips incorporating ICs, wherein wiring layers and insulating layers are sequentially formed on a silicon...
|
|
|
8003519 |
Systems and methods for back end of line processing of semiconductor circuits
A BEOL manufacturing process for forming a via process between two metal lines on a semiconductor wafer comprises depositing a portion of a first metal adhesion layer within a patterned via hole,...
|
|
|
8004077 |
Interconnection of land section to wiring layers at center of external connection terminals in semiconductor device and manufacturing thereof
A semiconductor device comprising: a substrate; a terminal on the substrate's first surface; a first electrode on the first surface connected to the terminal; an electronic element on the...
|
|
|
8004087 |
Semiconductor device with dual damascene wirings and method for manufacturing same
A multilayered wiring is formed in a prescribed area in an insulating film that is formed on a semiconductor substrate. Dual damascene wiring that is positioned on at least one layer of the...
|
|
|
8003524 |
Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement
An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate...
|
|
|
8004084 |
Semiconductor device and manufacturing method thereof
A semiconductor device includes a semiconductor wafer, a source region and a drain region formed within the semiconductor wafer, a gate electrode formed on the semiconductor wafer between the...
|
|
|
7998851 |
Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the same
A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate...
|
|
|
7998857 |
Integrated circuit and process for fabricating thereof
A process for fabricating an Integrated Circuit (IC) and the IC formed thereby is disclosed. The process comprises providing a substrate. The process further comprises forming a plurality of...
|
|
|
7994002 |
Method and apparatus for trench and via profile modification
Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods...
|
|
|
7994049 |
Manufacturing method of semiconductor device including filling a connecting hole with metal film
The present invention is to possible to avoid an inconvenience at a coupling portion between a barrier metal film obtained by depositing a titanium nitride film on a titanium film and thus having a...
|
|
|
7994048 |
Method of manufacturing a through electrode
A through electrode that offers excellent performance and can be manufactured through a simple process is to be provided. In a silicon spacer including a silicon substrate, an insulative thick film...
|