Patents in Class 438/627

Matches 1 - 50 out of 806

Match	Document	Document Title
1	RE40983	Method to plate C4 to copper stud A method for plating a second metal directly to a first metal without utilizing a mask. A semiconductor substrate is provided including at least one metal feature and at least one insulating layer...
2	7615482	Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or...
3	7612384	Reflective electrode for a semiconductor light emitting apparatus A process is disclosed for forming a reflective electrode on a semiconductor light emitting device, the light emitting device having an active layer for generating light and a cladding layer in...
4	7611984	Manufacture method for semiconductor device having improved copper diffusion preventive function of plugs and wirings made of copper or copper alloy (a) A copper alloy film containing at least two types of metal elements in addition to copper is formed on the surface of an insulator containing oxygen and formed on a semiconductor substrate. (b)...
5	7605072	Interconnect structure with a barrier-redundancy feature An interconnect structure that includes a barrier-redundancy feature which is capable of avoiding a sudden open circuit after an electromigration (EM) failure as well as a method of forming the...
6	7602038	Damascene structure having a reduced permittivity and manufacturing method thereof A semiconductor device includes a damascene structure and an air gap embedded in the damascene dielectric layer. A method of manufacturing a semiconductor device includes depositing a metal barrier...
7	7601633	Semiconductor device and method for fabricating the same A semiconductor device and fabricating method thereof are provided. A carbon interconnection line can be formed on an interlayer insulating layer such that the carbon interconnection line is...
8	7601632	Method of forming a metal line of a semiconductor device A first conductive layer is formed over a substrate in which contact holes are formed in an interlayer insulating layer. The first conductive layer is melted by an annealing process, thus coating...
9	7585762	Vapor deposition processes for tantalum carbide nitride materials Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined...
10	7582557	Process for low resistance metal cap An exemplary method includes: providing a substrate with exposed metal and dielectric surfaces, performing a reducing process on the metal and dielectric surfaces, and transferring the substrate in...
11	7566653	Interconnect structure with grain growth promotion layer and method for forming the same In general, the present invention provides an interconnect structure and method for forming the same. This present invention discloses an interconnect structure includes a Cu seeding layer embedded...
12	7563728	Methods of modifying interlayer adhesion Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method...
13	7563718	Method for forming tungsten layer of semiconductor device and method for forming tungsten wiring layer using the same A semiconductor substrate is loaded into a reaction chamber to form a tungsten layer. A source gas including tungsten (W) is introduced into the reaction chamber to grow a crystal nucleus of the...
14	7563705	Manufacturing method of semiconductor device A manufacturing method of a semiconductor device including a step of forming a via hole in an insulation layer including an organic low dielectric film, such as MSQ, SiC, and SiCN, and then...
15	7553759	Semiconductor device and method of manufacturing a semiconductor device A semiconductor device may include the following. A diffusion barrier formed over a semiconductor substrate having a conductive layer. An etching stop layer formed over a diffusion barrier....
16	7553757	Semiconductor device and method of manufacturing the same An interlayer insulator includes a first interlayer insulator and a second interlayer insulator formed on the first interlayer insulator and having a property of preventing diffusion of copper. A...
17	7550385	Amine-free deposition of metal-nitride films A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen...
18	7550377	Method for fabricating single-damascene structure, dual damascene structure, and opening thereof A method for fabricating a single-damascene opening is described. The method includes providing a substrate having a conductive line formed therein. A barrier layer, a dielectric layer, a metal...
19	7541675	Semiconductor device including fluorine diffusion barrier layer and method for manufacturing the same A semiconductor device including a fluorine diffusion barrier layer and a method for manufacturing the same are provided. The semiconductor device includes a specific pattern formed over a...
20	7541276	Methods for forming dual damascene wiring for semiconductor devices using protective via capping layer Exemplary embodiments of the invention generally include methods for forming multilayer metal interconnect structures using dual damascene methods that incorporate a via capping process to protect...
21	7538024	Method of fabricating a dual-damascene copper structure A method for fabricating a dual-damascene copper structure includes providing a semiconductor substrate having a dielectric layer thereon and a dual-damascene hole positioned in the dielectric...
22	7531902	Multi-layered metal line of semiconductor device having excellent diffusion barrier and method for forming the same A multi-layered metal line of a semiconductor device has a lower metal line and an upper metal line. The upper metal line includes a diffusion barrier, which is made of a stack of a first WN x ...
23	7528063	Semiconductor device having a reductant layer and manufacturing method thereof A semiconductor device includes an inter-metal dielectric (IMD) formed on a substrate and having at least one via hole, a via hole formed by filling the via hole with a first metal, a reductant...
24	7524755	Entire encapsulation of Cu interconnects using self-aligned CuSiN film A method of forming a barrier layer and cap comprised of CuSiN for an interconnect. We provide an interconnect opening in a dielectric layer over a semiconductor structure. We form a CuSiN barrier...
25	7521356	Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds The present invention provides atomic layer deposition systems and methods that include at least one compound of the formula (Formula I): Ta(NR 1 )(NR 2 R 3 ) 3 , wherein each R 1 , R 2 , and R 3 ...
26	7521345	High-temperature stable gate structure with metallic electrode The present invention provides a method for depositing a dielectric stack comprising forming a dielectric layer atop a substrate, the dielectric layer comprising at least oxygen and silicon atoms;...
27	7517793	Method of forming metal wire in semiconductor device A method of forming a metal wire in a semiconductor device includes performing a first etching process on an insulating layer formed on a semiconductor substrate to form a trench and an insulating...
28	7517791	Method for manufacturing semiconductor device It is an object of the present invention to provide a method for manufacturing a semiconductor device in which a contact hole with an opening having a high aspect ratio can be favorably filled...
29	7514358	Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum...
30	7514353	Contact metallization scheme using a barrier layer over a silicide layer Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the...
31	7501295	Method of fabricating a reflective electrode for a semiconductor light emitting device A process is disclosed for forming a reflective electrode on a semiconductor light emitting device, the light emitting device having an active layer for generating light and a cladding layer in...
32	7498256	Copper contact via structure using hybrid barrier layer Contact via structures using a hybrid barrier layer, are disclosed. One contact via structure includes: an opening through a dielectric to a silicide region; a first layer in the opening in direct...
33	7494917	Method for forming an electrical interconnection providing improved surface morphology of tungsten In a fabrication method for forming an electrical interconnection of CVD tungsten film, a contact hole is formed in a dielectric layer. A lower conductive layer is formed in the contact hole and...
34	7488682	High-density 3-dimensional resistors Interconnect, i.e., BEOL structures comprising at least one thin film resistor that is located at the same level as that of a neighboring conductive interconnect are provided. The present invention...
35	7488681	Method for fabricating Al metal line Disclosed is a method for fabricating an Al metal line. The method includes forming an insulating layer on a semiconductor substrate; forming a Ti layer, a bottom TiN layer, an Al layer and a top...
36	7488679	Interconnect structure and process of making the same A method of forming an interconnect structure in an inter-layer dielectric (ILD) material, the method include the steps of creating one or more via openings in the ILD material; forming a first...
37	7485578	Semiconductor device Embodiments relate to a semiconductor device and a method of fabricating semiconductor device, that may uniformly form a barrier layer in a via hole to thus prevent layers from being broken. In...
38	7485516	Method of ion implantation of nitrogen into semiconductor substrate prior to oxidation for offset spacer formation A method of formation of integrated circuit devices includes forming a gate electrode stack over a portion of a semiconductor. The stack includes a gate dielectric layer with a gate electrode...
39	7482264	Method of forming metal line of semiconductor device, and semiconductor device A semiconductor device includes a first barrier metal layer and a second barrier metal layer, a third barrier metal layer, and a metal line. The first barrier metal layer and the second barrier...
40	7482261	Interconnect structure for BEOL applications A semiconductor interconnect structure is provided that includes a new capping layer/dielectric material interface which is embedded inside the dielectric material. In particular, the new interface...
41	7476974	Method to fabricate interconnect structures A method includes forming a barrier layer on a substrate surface including at least one contact opening; forming an interconnect in the contact opening; and reducing the electrical conductivity of...
42	7476611	Semiconductor device and manufacturing method thereof An interconnect trench is formed on a dielectric layer 12 and a first HSQ layer 14 formed on a semiconductor substrate, and a tantalum family barrier metal layer 24 a is formed all over the...
43	7473638	Plasma-enhanced cyclic layer deposition process for barrier layers In one embodiment, a method for forming a metal-containing material on a substrate is provided which includes forming a metal containing barrier layer on a substrate by a plasma-enhanced cyclical...
44	7473637	ALD formed titanium nitride films The use of atomic layer deposition (ALD) to form a conductive titanium nitride layer produces a reliable structure for use in a variety of electronic devices. The structure is formed by depositing...
45	7470613	Dual damascene multi-level metallization A method for forming an interconnect structure, the interconnect structure comprising: a lower level wire having a side and a bottom, the lower level wire comprising: a lower core conductor and a...
46	7470612	Method of forming metal wiring layer of semiconductor device A method of forming a metal wiring layer of a semiconductor device produces metal wiring that is free of defects. The method includes forming an insulating layer pattern defining a recess on a...
47	7468318	Method for manufacturing mold type semiconductor device A method for manufacturing a mold type semiconductor device is provided. The device includes a semiconductor chip having a semiconductor part and a metallic member connecting to the chip via a...
48	7465659	Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD) Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also...
49	7459387	Semiconductor electronic device and method of manufacturing thereof A semiconductor electronic device includes a die of semiconductor material and a support. The die of semiconductor material includes an integrated electronic circuit and a plurality of contact pads...
50	7453149	Composite barrier layer A composite barrier layer provides superior barrier qualities and superior adhesion properties to both dielectric materials and conductive materials as the composite barrier layer extends...

Matches 1 - 50 out of 806

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