Matches 101 - 150 out of 810 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
Match Document Document Title
7259091 Technique for forming a passivation layer prior to depositing a barrier layer in a copper metallization layer  
By performing a wet chemical process after etching a via, contaminations may be removed and a thin passivation layer may be formed that may then be readily removed in a subsequent sputter etch...
7259090 Copper damascene integration scheme for improved barrier layers  
A metal filled dual damascene structure with a reduced capacitance contribution and method for forming the same, the method including forming a first metal filled damascene lined with a first metal...
7256136 Self-patterning of photo-active dielectric materials for interconnect isolation  
In accordance with the objectives of the invention a new method is provided for the creation of an interconnect pattern. The invention provides for a layer of Photo-Active Dielectric (PAD) to be...
7256502 Metal interconnections for semiconductor devices including a buffer layer on a trench sidewall  
A metal interconnection for an integrated circuit device is fabricated by forming a trench in an integrated circuit substrate and a via hole beneath a portion of the trench. The trench includes a...
7253097 Integrated circuit system using dual damascene process  
An integrated circuit system includes providing a semiconductor substrate having a semiconductor device provided thereon. A first dielectric layer is formed over the semiconductor substrate, and a...
7253092 Tungsten plug corrosion prevention method using water  
Disclosed herein is a method of making integrated circuits. In one embodiment the method includes forming tungsten plugs in the integrated circuit and forming electrically conductive interconnect...
7238626 Chemically and electrically stabilized polymer films  
A method of stabilizing a poly(paraxylylene) dielectric thin film after forming the dielectric thin film via transport polymerization is disclosed, wherein the method includes annealing the...
7239017 Low-k B-doped SiC copper diffusion barrier films  
The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and...
7238606 Semiconductor devices and method for fabricating the same  
Methods for fabricating a copper interconnect of a semiconductor device are disclosed. An example method for fabricating a copper interconnect of a semiconductor device deposits a first insulating...
7238607 Method to minimize formation of recess at surface planarized by chemical mechanical planarization  
When chemical mechanical planarization (CMP) is used to planarize a surface coexposing patterned features and dielectric fill, where patterned features and the fill are formed of materials having...
7235882 Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same  
In a semiconductor device, a wiring pattern groove is formed in a surface portion of a silicon oxide film provided above a semiconductor substrate. A wiring layer is buried into the wiring pattern...
7223685 Damascene fabrication with electrochemical layer removal  
The present application discloses process comprising providing a wafer, the wafer comprising an inter-layer dielectric (ILD) having a feature therein, an under-layer deposited on the ILD, and a...
7220680 Method for photolithography in semiconductor manufacturing  
The present disclosure relates generally to the manufacturing of semiconductor devices. In one example, a method for forming a portion of a semiconductor device includes forming a photo sensitive...
7211507 PE-ALD of TaN diffusion barrier region on low-k materials  
Methods of depositing a tantalum-nitride (TaN) diffusion barrier region on low-k materials. The methods include forming a protective layer on the low-k material substrate by performing...
7211508 Atomic layer deposition of tantalum based barrier materials  
Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate...
7211896 Semiconductor device and method of manufacturing the same  
There is provided a method of manufacturing a semiconductor device in which interconnect capacitance is restrained. The semiconductor device 200 comprises a semiconductor substrate; a second...
7208402 Method and apparatus for improved power routing  
An apparatus comprising: a die having a top metal layer, the top metal layer comprised of at least a first metal line and a second metal line; a passivation layer covering the top metal layer; a C4...
7208418 Sealing sidewall pores in low-k dielectrics  
Barrier metal layer discontinuities or gaps due to low-k dielectric porosity is reduced by sealing sidewall porosity before barrier metal layer deposition. Embodiments include sealing sidewall...
7205226 Sacrificial layer for protection during trench etch  
A method for etching a trench is provided. The method initiates with providing a substrate having a patterned feature. The method includes alternating between deposition of a protective layer onto...
7202159 Diffusion barriers comprising a self-assembled monolayer  
The present invention provides a method for forming a diffusion barrier layer, a diffusion barrier in an integrated circuit and an integrated circuit. The method for forming a diffusion barrier...
7202157 Method for forming metallic interconnects in semiconductor devices  
A method for forming a metallic interconnect in a semiconductor device is disclosed. An example method forms an IDL on a substrate including predetermined devices, forms a via hole in the IDL,...
7199043 Method of forming copper wiring in semiconductor device  
Disclosed in a method of forming a copper wiring in a semiconductor device. A copper layer buries a damascene pattern in which an interlayer insulating film of a low dielectric constant. The copper...
7199044 Method for manufacturing semiconductor device  
In a method for manufacturing a semiconductor device, an insulating film having pores is formed on a substrate, and an opening is formed in the insulating film. Thereafter, a material gas supplying...
7196002 Method of making dual damascene with via etch through  
A method for fabricating dual damascene structures having improved IC performance and reduced RC delay characteristics is provided. In one embodiment, a substrate with an etch stop layer formed...
7196003 Method for manufacturing a semiconductor device suitable for the formation of a wiring layer  
A four-layer structured hard mask composed of a SiC film, a first SiO 2 film, a SiC film, and a second SiO 2 film is formed on a porous silica film as an interlayer insulating film. Then, the...
7192866 Source alternating MOCVD processes to deposit tungsten nitride thin films as barrier layers for MOCVD copper interconnects  
An alternating source MOCVD process is provided for depositing tungsten nitride thin films for use as barrier layers for copper interconnects. Alternating the tungsten precursor produces fine...
7189639 Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications  
A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing...
7179732 Interconnection structure and fabrication method thereof  
An interconnection structure and a fabrication method thereof. A first organic low-k material layer, a stress redistribution layer, a second organic low-k dielectric layer are formed in sequence...
7172964 Method of preventing photoresist poisoning of a low-dielectric-constant insulator  
A method comprises forming a low-dielectric constant (low-k) layer over a semiconductor substrate, forming an anti-reflective layer over the low-k layer, forming at least one opening in the...
7172962 Method of manufacturing a semiconductor device  
On a substrate are sequentially formed a first interconnection 203 , a diffusion barrier film 205 and a second insulating film 207 , and on the upper surface of the second insulating film 207 ...
7169706 Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition  
An exemplary embodiment is related to a method of using an adhesion precursor in an integrated circuit fabrication process. The method includes providing a gas of material over a dielectric...
7163883 Edge seal for a semiconductor device  
An edge seal around the periphery of an integrated circuit device which environmentally protects the copper circuitry from cracks that may form in the low-k interlevel dielectric during dicing. The...
7163888 Direct imprinting of etch barriers using step and flash imprint lithography  
A direct imprinting process for Step and Flash Imprint Lithography includes providing ( 40 ) a substrate ( 12 ); forming ( 44 ) an etch barrier layer ( 14 ) on the substrate; patterning ( 46 ) the...
7163889 Film for copper diffusion barrier  
The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the...
7157795 Composite tantalum nitride/tantalum copper capping layer  
Electromigration and stress migration of Cu interconnects are significantly reduced by forming a composite capping layer comprising a layer of tantalum nitride on the upper surface of the inlaid Cu...
7154179 Semiconductor device  
A semiconductor device, wherein an increase of a capacity between wiring layers is suppressed, reliability of wiring and property of withstand voltage of a diffusion prevention insulation film can...
7153766 Metal barrier cap fabrication by polymer lift-off  
A new method is provided for the creation of copper interconnects. A pattern of copper interconnects is created, a protective layer of semiconductor material is deposited over the surface of the...
7148118 Methods of forming metal nitride, and methods of forming capacitor constructions  
The invention encompasses methods of forming metal nitride proximate dielectric materials. The metal nitride comprises two portions, with one of the portions being nearer the dielectric material...
7144806 ALD of tantalum using a hydride reducing agent  
An ALD method deposits conformal tantalum-containing material layers on small features of a substrate surface. The method includes the following principal operations: depositing a thin conformal...
7144808 Integration flow to prevent delamination from copper  
The present invention provides, in one embodiment, method of forming a barrier layer 300 over a semiconductor substrate 110. The method comprises forming an opening 120 in an insulating layer 130...
7141494 Method for reducing tungsten film roughness and improving step coverage  
A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method...
7138333 Process for sealing plasma-damaged, porous low-k materials  
The invention relates to a process for sealing plasma-damaged, porous low-k materials on Si substrates, in which self-aligning molecules (SAMs) are applied to the low-k material, and then a...
7135400 Damascene process capable of avoiding via resist poisoning  
A method for avoiding resist poisoning during a damascene process is disclosed. A semiconductor substrate is provided with a low-k dielectric layer (k≦2.9) thereon, a SiC layer over the low-k...
7129161 Depositing a tantalum film  
This invention relates to a method of depositing a tantalum film in which α-Ta dominates and to methods of electroplating copper using such films. The films have a thickness of less than 300 nm...
7129160 Method for simultaneously removing multiple conductive materials from microelectronic substrates  
A method and apparatus for simultaneously removing conductive materials from a microelectronic substrate. A method in accordance with one embodiment of the invention includes contacting a surface...
7122464 Systems and methods of forming refractory metal nitride layers using disilazanes  
A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a...
7122474 Method for forming barrier metal of semiconductor device  
A method for forming a barrier metal of a semiconductor device wherein a TiSiN layer having an atomic layer thickness is deposited by performing deposition of an Si layer inside a contact hole of a...
7119440 Back end IC wiring with improved electro-migration resistance  
A multi-level semiconductor device wiring interconnect structure and method of forming the same to improve electrical properties and reliability of wiring interconnects including an...
7115498 Method of ultra-low energy ion implantation to form alloy layers in copper  
A method of fabricating an integrated circuit can include forming a barrier layer along lateral side walls and a bottom of a via aperture, forming a seed layer proximate and conformal to the...
7115499 Cyclical deposition of tungsten nitride for metal oxide gate electrode  
A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a...
Matches 101 - 150 out of 810 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >