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5874355 |
Method to prevent volcane effect in tungsten plug deposition
A method to prevent volcano effect in tungsten plug deposition is described. The method is applied to both the contact plugs as well as the via plugs. For these purposes, the use of a nitrogen (N 2...
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5874327 |
Fabricating a semiconductor device using precursor CMOS semiconductor substrate of a given configuration
Methods of planarizing one or more layers having an irregular top surface topology in a semiconductor device based on an underlying MOS structure are disclosed. Methods of creating doped wells or...
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5872028 |
Method of forming power semiconductor devices with controllable integrated buffer
A method of manufacturing a semiconductor device and device in which a sacrificial N shelf layer is grown on a P+ semiconductor substrate to contain the out-diffusion of dopant from the substrate....
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5872053 |
Method of forming an enlarged head on a plug to eliminate the enclosure requirement
The contact opening through an insulating layer is formed having a straight sidewall portion and a bowl shaped sidewall portion. The bowl shaped sidewall portion is near the top of the insulation...
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5851918 |
Methods of fabricating liquid crystal display elements and interconnects therefor
Methods of fabricating a liquid crystal display element on a substrate includes forming a thin film transistor on the substrate, the thin film transistor including a gate electrode covered by a...
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5851917 |
Method for manufacturing a multi-layer wiring structure of a semiconductor device
A wiring structure of semiconductor device and a method for manufacturing the same which fills up a contact hole of below one half micron. An insulating layer is formed on a semiconductor...
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5851912 |
Modified tungsten-plug contact process
An method for the fabrication of an ohmic, low resistance contact to heavily doped silicon is described using a CVD deposited tungsten plug provided with Ti/TiN barrier metallurgy. The method...
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5851913 |
Method for forming a multilevel interconnect structure of an integrated circuit by a single via etch and single fill process
A multilevel interconnect structure is provided. The multilevel interconnect structure includes two, three or more levels of conductors formed according to at least two exemplary embodiments....
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5846877 |
Method for fabricating an Al-Ge alloy wiring of semiconductor device
A method for fabricating wiring of a semiconductor device, which includes a first step for depositing an insulating film on a semiconductor substrate, and forming contact holes by selectively...
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5843837 |
Method of contact hole burying
A contact hole burying method is provided including the steps of: coating an oxide layer on a substrate and removing the oxide layer except for a portion thereof to form a contact hole extending...
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5840625 |
Method of fabricating integrated circuit interconnection employing tungsten/aluminum layers
An improved integrated circuit interconnection for interconnecting at least two conductive regions within an integrated circuit, and method for producing the same. The interconnection includes a...
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5834369 |
Method of preventing diffusion between interconnect and plug
There are provided the steps of: forming a connection hole in an interlayer insulating film overlying a lower metal interconnection; forming a W plug in the connection hole; forming a first metal...
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5824597 |
Method of forming contact hole plug
An improved contact hole plug and method are disclosed, the plug connecting a first conductive layer to a second conductive layer which is insulated from the first conductive layer. The contact...
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5821168 |
Process for forming a semiconductor device
A process for forming a semiconductor device (68) in which an insulating layer (52) is nitrided and then covered by a thin adhesion layer (58) before depositing a composite copper layer (62). This...
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5814557 |
Method of forming an interconnect structure
An interconnect structure (10) is formed by filling a dual damascene structure (12) with conductive material. A barrier layer (13) is formed to serve as a seed layer and to prevent the out...
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5804501 |
Method for forming a wiring metal layer in a semiconductor device
A method for forming a wiring layer for a semiconductor device is disclosed. During the formation of a VLSI-scale device having a contact hole with a large aspect ratio, metal layers are filled...
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5801095 |
Production worthy interconnect process for deep sub-half micrometer back-end-of-line technology
The present invention is directed to improving the throughput of the process for fabricating multilayer interconnects. Tungsten plugs, formed in contact/via openings etched in an interlayer...
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5798300 |
Method for forming conductors in integrated circuits
A method of forming electromigration resistant integrated circuit runners is disclosed. A collimated beam of particles is directed toward a substrate to form a metal nucleating layer. Then a...
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5795819 |
Integrated pad and fuse structure for planar copper metallurgy
A semiconductor interconnection consists of a corrosion resistant integrated fuse and Controlled, Collapse Chip Connection (C4) structure for the planar copper Back End of Line (BEOL). Non copper...
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5789321 |
Method for forming a barrier metal layer made of titanium nitride on a silicon substrate
A low pressure chloride chemical vapor deposition method for depositing a titanium nitride film within a contact hole formed in an insulation film overlying a silicon substrate is carried out by...
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5783483 |
Method of fabricating a barrier against metal diffusion
A method of forming a barrier layer for preventing the diffusion of a metal interconnect through an interlayer dielectric of an integrated circuit and to act as an etch stop. A thin metal layer is...
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5776827 |
Wiring-forming method
An insulating layer 6 is formed covering a lower level wiring layer 5. Contact hole 11 registered with the lower level wiring 5 is then formed in the insulating layer 6. An adhesion layer 12 is...
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5770517 |
Semiconductor fabrication employing copper plug formation within a contact area
An integrated circuit fabrication process is provided in which copper is used as the contact plug material for a via. The via is a hole etched through an interlevel dielectric which is disposed...
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5759906 |
Planarization method for intermetal dielectrics between multilevel interconnections on integrated circuits
An improved method for making a planar intermetal dielectric layer (IMD) for multilevel electrical interconnections on ULSI circuits is achieved. The method involves forming metal lines on which is...
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5759915 |
Method of forming semiconductor device having an improved buried electrode formed by selective CVD
The present invention provides a semiconductor device including an improved buried electrode formed by selective CVD. In this semiconductor device, a first insulation layer is formed on a...
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5756396 |
Method of making a multi-layer wiring structure having conductive sidewall etch stoppers and a stacked plug interconnect
The present invention provides a structure and a method of electrically connecting wiring layers by forming a stacked plug interconnect. The first wiring layer is formed over a dielectric layer and...
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5753527 |
Method of manufacturing a semiconductor memory device
A first interlayer insulating film having a second contact hole is formed on a main surface of a semiconductor substrate 1 in a peripheral circuitry. A second plug electrode of the same material as...
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5750438 |
Method for fabricating a local interconnection structure
A local interconnection structure is disclosed. The local interconnection structure is formed on a silicon substrate in which a polysilicon gate and a number of diffusion regions exist. The...
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5747361 |
Stabilization of the interface between aluminum and titanium nitride
A semiconductor device comprises at least one metal interconnect layer, a titanium-based barrier layer in contact with the metal interconnect layer. The metal interconnect layer contains titanium...
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5747379 |
Method of fabricating seamless tungsten plug employing tungsten redeposition and etch back
A process has been developed in which seamless tungsten plugs are used to fill deep, narrow contact holes. The process features initially forming a tungsten plug in a contact hole, via tungsten...
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5744376 |
Method of manufacturing copper interconnect with top barrier layer
A structure and method for making copper interconnections in an integrated circuit are described. The structure is a damascene copper connector whose upper surface is coplanar with the upper...
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5741720 |
Method of programming an improved metal-to-metal via-type antifuse
A metal-to-metal antifuse disposed between two aluminum metallization layers in a CMOS integrated circuit or similar structure includes an antifuse material layer having an aluminum-free conductive...
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5736458 |
Method for improved aluminium-copper deposition and robust via contact resistance
A method for improving the electrical resistance of contacting surfaces in via holes in semiconductor substrates is disclosed. The via holes are formed and later filled with metal to interconnect...
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5730834 |
Fluorine residue removal after tungsten etchback
Forming tungsten plugs allows for a conformal step coverage into contacts in semiconductor wafer processing. By rinsing the wafers after the tungsten etchback but before the wafers have a chance to...
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5728626 |
Spin-on conductor process for integrated circuits
A method of planarizing a non-planar substrate, such as filling vias and contact holes, spreads a suspension of a conducting material suspended in a liquid on a substrate. The suspension includes...
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5712207 |
Profile improvement of a metal interconnect structure on a tungsten plug
A process for forming aluminum interconnect structures has been developed, that concentrates on alleviating the effects of the poor step coverage of the interconnect metallization, that develops in...
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5712140 |
Method of manufacturing interconnection structure of a semiconductor device
An aluminum interconnection film has a three layered structure of an aluminum alloy film, a tungsten film, and a titanium nitride film. An aluminum interconnection film and a second aluminum...
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5710060 |
Method of forming wiring using sputtered insulating mask
A semiconductor device includes an inter-level insulating film formed on a semiconductor substrate, wiring layers formed at positions having different depths inside the inter-level insulating film,...
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5705426 |
Method of forming semiconductor device having planarized wiring with good thermal resistance
A method of forming conductive wiring on a semiconductor substrate. A plurality of contact holes having different sizes are formed in an insulating film formed on the substrate. A first barrier...
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5702981 |
Method for forming a via in a semiconductor device
A method for forming vias in a semiconductor device improves the resistance and reliability of contacts formed by use of an etch stop layer during the via formation process. An etch stop layer...
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5700726 |
Multi-layered tungsten depositions for contact hole filling
A process for filling small diameter contact holes, with tungsten, has been developed. This process consists of using two consecutive tungsten depositions. A first tungsten layer, that will exhibit...
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5688718 |
Method of CVD TiN barrier layer integration
A method of forming a titanium nitride barrier layer is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer is deposited overlying the...
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5679605 |
Multilevel interconnect structure of an integrated circuit formed by a single via etch and dual fill process
A multilevel interconnect structure is provided. The multilevel interconnect structure includes two, three or more levels of conductors formed according to at least two exemplary embodiments....
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5674787 |
Selective electroless copper deposited interconnect plugs for ULSI applications
A method or utilizing electroless copper deposition to selectively form encapsulated copper plugs to connect conductive regions on a semiconductor. A via opening in an inter-level dielectric (ILD)...
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5658828 |
Method for forming an aluminum contact through an insulating layer
A method for forming an aluminum contact through an insulating layer includes the formation of an opening. A barrier layer is formed, if necessary, over the insulating layer and in the opening. A...
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5656545 |
Elimination of tungsten dimple for stacked contact or via application
A method for forming planarized tungsten plugs, for small diameter contact holes, using a RIE etchback process, has been developed. An objective of reducing a seam, inherent when filling holes with...
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5654216 |
Formation of a metal via structure from a composite metal layer
A process for creating narrow, metal via structures, used to connect metallization levels, has been developed. The process features initially forming a narrow, metal via structure, and then an...
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5652180 |
Method of manufacturing semiconductor device with contact structure
A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of high melting point metal deposited...
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5627105 |
Plasma etch process and TiSi.sub.x layers made using the process
A method for making an improved metal silicide layer on a silicon substrate by plasma bombardment of the substrate with Ne ions to remove the native oxide without damage or significant implantation...
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5627098 |
Method of forming an antifuse in an integrated circuit
An antifuse structure in an integrated circuit including a first interconnection line, a second interconnection line formed over the first interconnection line, and a plurality of programming...
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