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7615484 |
Integrated circuit manufacturing method using hard mask
An integrated circuit hard mask processing system is provided including providing a substrate having an integrated circuit; forming an interconnect layer over the integrated circuit; applying a...
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RE40965 |
Method of forming low-resistance contact electrodes in semiconductor devices
There is formed on a semiconductor substrate a lamination of a first insulating film of nondoped silicon glass or the like and, on this first insulating film, a second insulating film of boron...
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7611983 |
Semiconductor device and a manufacturing method of the same
A first BPSG film covering a transistor is formed. Next, a second BPSG film is formed on the first BPSG film. The B concentration in the first BPSG film is about five times higher than the B...
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7592660 |
Semiconductor device and method for manufacturing the same
There is provided a semiconductor device which includes a base insulating film formed on a semiconductor substrate, a capacitor formed on the base insulating film, an interlayer insulating film...
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7592250 |
Multilayer wiring board, manufacturing method thereof, semiconductor device, and wireless electronic device
A multilayer wiring board exhibiting excellent moldability and having a capacitor where variation of capacitance is suppressed, its producing method, a semiconductor device mounting a semiconductor...
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7589014 |
Semiconductor device having multiple wiring layers and method of producing the same
A method of producing a semiconductor device having a plurality of wiring layers forms a first interlayer-insulating film, forms a plurality of grooves for wiring in the first interlayer-insulating...
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7580088 |
Contact for semiconductor and display devices
A device and corresponding method of fabrication thereof are disclosed, where the device provides a contact for semiconductor and display devices, the device including a substrate, a first wiring...
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7579590 |
Method of measuring thin layers using SIMS
A method for measuring the thickness of a layer is provided, comprising (a) providing a structure ( 101 ) comprising a first layer disposed on a second layer; (b) impinging ( 103 ) the structure...
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7579270 |
Method for manufacturing a semiconductor device
It is an object of the present invention to provide a method for manufacturing a highly reliable semiconductor device with preferable yield. In the invention, two-step etching is performed when...
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7579258 |
Semiconductor interconnect having adjacent reservoir for bonding and method for formation
A semiconductor device and method has interconnects with adjoining reservoir openings. A dielectric layer is formed as part of an uppermost of the one or more interconnect layers. Openings formed...
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7576006 |
Protective self-aligned buffer layers for damascene interconnects
Capping protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. Encapsulating...
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7572728 |
Semiconductor device and method for manufacturing the same
A semiconductor device and method with a dual damascene pattern uses buffer layers to prevent photoresist layer poisoning due to a reaction between an interlayer dielectric and a photoresist layer....
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7572727 |
Semiconductor formation method that utilizes multiple etch stop layers
The present invention is a semiconductor contact formation system and method. Contact insulation regions are formed with multiple etch stop sublayers that facilitate formation of contacts. This...
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7572710 |
Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of...
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7569478 |
Method and apparatus for manufacturing semiconductor device, control program and computer storage medium
In a method for manufacturing a semiconductor device having a dual damascene structure, a semiconductor substrate formed by stacking a trench mask and a via hole resist mask on an insulating film...
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7569467 |
Semiconductor device and manufacturing method thereof
A semiconductor device has a multi-layer wiring in which resistance against migration of the semiconductor device is raised to improve the yield. Semiconductor device 100 includes a first...
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7566971 |
Semiconductor device and manufacturing method thereof
The invention provides a technology for manufacturing a higher performance and higher reliability semiconductor device at low cost and with high yield. The semiconductor device of the invention has...
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7563728 |
Methods of modifying interlayer adhesion
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method...
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7563706 |
Material for forming insulating film with low dielectric constant, low dielectric insulating film, method for forming low dielectric insulating film and semiconductor device
A material for forming an insulating film with low dielectric constant of this invention is a solution including a fine particle principally composed of a silicon atom and an oxygen atom and having...
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7557030 |
Method for fabricating a recess gate in a semiconductor device
A method for fabricating a recess gate in a semiconductor device is provided. The method includes selectively etching an active region of a substrate to form a recess pattern, performing a post...
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7553759 |
Semiconductor device and method of manufacturing a semiconductor device
A semiconductor device may include the following. A diffusion barrier formed over a semiconductor substrate having a conductive layer. An etching stop layer formed over a diffusion barrier....
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7531448 |
Manufacturing method of dual damascene structure
A manufacturing method of a dual damascene structure is provided. First, a barrier layer, a first dielectric layer, a second dielectric layer, a cap layer, a metal-containing hard mask layer, a...
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7528059 |
Method for reducing polish-induced damage in a contact structure by forming a capping layer
By forming a capping layer after a CMP process for planarizing the surface topography of an ILD layer, any surface irregularities may be efficiently sealed, thereby reducing the risk for forming...
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7524752 |
Method of manufacturing semiconductor device
In a method of manufacturing a semiconductor device which method is made up of a process of forming a wiring groove using a hard mask, a metal hard mask 107 is used to form a wiring groove 111 ,...
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7524750 |
Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD
A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an...
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7521355 |
Integrated circuit insulators and related methods
A system and method for providing low dielectric constant insulators in integrated circuits is provided. One aspect of this disclosure relates to a method for forming an integrated circuit...
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7521353 |
Method for reducing dielectric overetch when making contact to conductive features
In a first preferred embodiment of the present invention, conductive features are formed on a first dielectric etch stop layer, and a second dielectric material is deposited over and between the...
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7514779 |
Multilayer build-up wiring board
Mesh holes 35 a and 59 a of upper solid layers 35 and upper solid layers 59 are formed to overlie on one another, so that the insulating properties of interlayer resin insulating layers 50...
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7514365 |
Method of fabricating opening and plug
A method of fabricating an opening or plug. In the process of forming the opening, before a photoresist layer is formed over a dielectric layer, a treatment process is performed to form a film on...
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7510959 |
Method of manufacturing a semiconductor device having damascene structures with air gaps
A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. In one embodiment, the method comprises the steps of depositing and patterning a disposable...
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7507656 |
Method and structure for low k interlayer dielectric layer
An integrated circuit interconnect structure. The structure includes a substrate and a layer of transistor elements overlying the substrate. A first interlayer dielectric layer is formed overlying...
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7504727 |
Semiconductor interconnect structure utilizing a porous dielectric material as an etch stop layer between adjacent non-porous dielectric materials
Interconnect structures possessing a non-porous (dense) low-k organosilicate glass (OSG) film utilizing a porous low-k OSG film as an etch stop layer or a porous low-k OSG film using a non-porous...
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7504699 |
Fabrication of a semiconductor device with air gaps for ultra-low capacitance interconnections
A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a...
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7504330 |
Method of forming an insulative film
A method of forming an insulative film includes a step of vacuum laminating an insulative organic material on a substrate that has a peripheral ring electrode formed in a peripheral region of the...
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7504287 |
Methods for fabricating an integrated circuit
A method is provided for fabricating a semiconductor device which includes a first contact point and a second contact point located above the first contact point. A first material layer is...
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7489039 |
Metal fill region of a semiconductor chip
Disclosed is a metal fill region of a semiconductor chip including a plurality of layer sets of the semiconductor chip, each set including a first metal fill layer, a second metal fill layer, and...
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7488680 |
Conductive through via process for electronic device carriers
Conductive through vias are formed in electronic devices and electronic device carrier, such as, a silicon chip carrier. An annulus cavity is etched into the silicon carrier from the top side of...
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7485570 |
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on...
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7485569 |
Printed circuit board including embedded chips and method of fabricating the same
A printed circuit board having embedded chips, composed of a central layer having an embedded chip, an insulating layer formed on one surface or both surfaces of the central layer and having a via...
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7482262 |
Method of manufacturing semiconductor device
Disclosed are embodiments relating to a method of manufacturing a semiconductor device that may improve the yield rate of the semiconductor device. In embodiments, the method may include preparing...
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7470611 |
In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
The present invention provides a SiC material, formed according to certain process regimes, useful as a barrier layer, etch stop, and/or an ARC, in multiple levels, including the pre-metal...
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7470597 |
Method of fabricating a multilayered dielectric diffusion barrier layer
A method of fabricating a structure including a low-k multilayered dielectric diffusion barrier layer having at least one low-k sublayer and at least one air barrier sublayer is described herein....
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7468317 |
Method of forming metal line of semiconductor device
A method of forming a metal line, in which a nitride layer is used instead of a metal barrier layer, enabling a metal line structure with a relatively low resistance and therefore realizing a high...
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7462558 |
Method for fabricating a circuit component
A method for fabricating a metallization structure comprises depositing a first metal layer; depositing a first pattern-defining layer over said first metal layer, a first opening in said first...
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7459787 |
Multi-layered copper line structure of semiconductor device and method for forming the same
A multi-layered copper line structure of a semiconductor device with a lower copper line, an upper copper line, and a via contact, which electrically connects the lower copper line and the upper...
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7459389 |
Method of forming a semiconductor device having air gaps and the structure so formed
A method of forming a semiconductor device. Depositing alternating layers of a first and a second dielectric material, wherein the first and second dielectric materials are selectively etchable at...
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7456093 |
Method for improving a semiconductor device delamination resistance
A semiconductor device with improved resistance to delamination and method for forming the same the method including providing a semiconductor wafer comprising a metallization layer with an...
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7452803 |
Method for fabricating chip structure
A method for fabricating a metallization structure comprises depositing a first metal layer; depositing a first pattern-defining layer over said first metal layer, a first opening in said first...
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7452802 |
Method of forming metal wiring for high voltage element
Disclosed herein is a method of forming metal wirings for high voltage elements. According to the present invention, after a copper film is formed, a wet etch process using an interlayer insulating...
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7452795 |
Semiconductor device and method for fabricating the same
When a via-hole 26 and an interconnection trench 32 are formed in an interconnection films 16, 18 by using as a mask a hard mask 20 covering the region except via-hole forming region, and a...
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