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9041215 Single mask package apparatus and method  
Disclosed herein is a single mask package apparatus on a device comprising a first substrate having a land disposed on a first surface, a stud disposed on the land and a protective layer disposed...
9029252 Nanostructure, optical device including the same, and methods of manufacturing the nanostructure and the optical device  
A nanostructure, an optical device including the nanostructure, and methods of manufacturing the nanostructure and the optical device. A method of manufacturing a nanostructure may include forming...
9018092 Encapsulated metal interconnect  
A plurality of metal tracks are formed in an integrated circuit die in three metal layers stacked within the die. A protective dielectric layer is formed around metal tracks of an intermediate...
9018740 Sensor with field effect transistor having the gate dielectric consisting of a layer of lipids and method of fabricating this transistor  
A field effect transistor (1) including: a semiconducting substrate (2) having two areas doped with electric charge carriers forming a source area (3) and a drain area (4), respectively; a...
8999842 Interconnect structure for semiconductor devices  
A method of manufacturing a semiconductor device with a cap layer for a copper interconnect structure formed in a dielectric layer is provided. In an embodiment, a conductive material is embedded...
8994125 Semiconductor device including a field effect transistor  
A semiconductor device includes, on a semiconductor substrate, a gate insulating film, a pMIS metal material or an nMIS metal material, a gate electrode material, and a gate sidewall metal layer.
8994086 Memory device made from stacked substrates bonded with a resin containing conductive particles  
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of...
8962489 Method for etching film containing cobalt and palladium  
Disclosed is a method for etching a film contains cobalt and palladium is provided. A hard mask is provided on the film. The method film includes a process “a” of etching the film by ion sputter...
8927869 Semiconductor structures and methods of manufacture  
Wire-bonded semiconductor structures using organic insulating material and methods of manufacture are disclosed. The method includes forming a metal wiring layer in an organic insulator layer. The...
8927414 Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device  
A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a...
8872334 Method for manufacturing semiconductor device  
In a manufacturing method of a semiconductor device incorporating a semiconductor element in a multilayered wiring structure including a plurality of wiring layers and insulating layers, a...
8871627 Semiconductor device having low dielectric insulating film and manufacturing method of the same  
A semiconductor device includes a semiconductor substrate on which a structure portion is provided except a peripheral portion thereof, and has a laminated structure including low dielectric films...
8853659 Switchable electronic device and method of switching said device  
A switchable electronic device comprises a hole blocking layer and a layer comprising a conductive material between first and second electrodes, wherein the conductivity of the device may be...
8835307 Method and structure for reworking antireflective coating over semiconductor substrate  
A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a...
8828841 Semiconductor device and method of manufacture  
A system and method for forming an isolation trench is provided. An embodiment comprises forming a trench and then lining the trench with a dielectric liner. Prior to etching the dielectric liner,...
8790990 Silica-based film forming material for formation of air gaps, and method for forming air gaps  
Provided is a silica-based film forming material for formation of air gaps, the material being capable of forming air gaps without employing a CVD method. A silica-based film forming material for...
8785319 Methods for forming fine patterns of a semiconductor device  
Methods of forming fine patterns are provided. The methods may include forming first hard mask patterns extending in a first direction on a lower layer, forming second hard mask patterns filling...
8785321 Low resistance and reliable copper interconnects by variable doping  
A method and system is provided for efficiently varying the composition of the metal interconnects for a semiconductor device. A metal interconnect according to the present disclosure has an...
8766449 Variable interconnect geometry for electronic packages and fabrication methods  
Disclosed is a variable interconnect geometry formed on a substrate that allows for increased electrical performance of the interconnects without compromising mechanical reliability. The...
8759212 Semiconductor device and method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device includes: forming a cap insulating film, including Si and C, on a substrate; forming an organic silica film, having a composition ratio of the...
8741787 Increased density of low-K dielectric materials in semiconductor devices by applying a UV treatment  
A silicon-based low-k dielectric material is formed on the basis of a single precursor material, such as OMTCS, without incorporating a porogen species. To this end, the initial deposition of the...
8735300 Method of forming contact hole  
A method of forming contact hole is disclosed, including the steps of: providing a semiconductor substrate having a first dielectric layer, a second dielectric layer and a third dielectric layer...
8679967 Apparatus and methods of forming memory lines and structures using double sidewall patterning for four times half pitch relief patterning  
The present invention provides apparatus, methods, and systems for fabricating memory lines and structures using double sidewall patterning for four times half pitch relief patterning. The...
8673764 Method and system for making and cleaning semiconductor device  
Various embodiments provide methods and systems for making and/or cleaning semiconductor devices. In one embodiment, a semiconductor device can be formed including a metal layer and a photoresist...
8658473 Ultrathin buried die module and method of manufacturing thereof  
A method of forming a buried die module includes providing an initial laminate flex layer and forming a die opening through the initial laminate flex layer. A first uncut laminate flex layer is...
8652962 Etch damage and ESL free dual damascene metal interconnect  
A method of forming a dual damascene metal interconnect for a semiconductor device. The method includes forming a layer of low-k dielectric, forming vias through the low-k dielectric layer,...
8637396 Dielectric barrier deposition using oxygen containing precursor  
A method is provided for depositing a dielectric barrier film including a precursor with silicon, carbon, oxygen, and hydrogen with improved barrier dielectric properties including lower...
8629556 Semiconductor device  
The semiconductor device 1 includes a substrate 3, a semiconductor chip 4 mounted on the substrate 3, the substrate 3, a bump 5 connecting the substrate 3 and the semiconductor chip 4, and an...
8629055 Manufacturing method of semiconductor device  
A coating solution of SOG is applied on a silicon oxynitride film (11) and precured. As a result, moisture contained in the coating solution volatilizes, and an SOG film (12) is formed. Next, a...
8624402 Mock bump system for flip chip integrated circuits  
A mock bump system includes providing a flip chip integrated circuit having an edge and forming a mock bump near the edge.
8618534 Field-effect transistor with a dielectric layer having therein denatured albumen  
A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the...
8609531 Methods of selectively forming ruthenium liner layer  
One method includes forming a metal-containing material layer in a trench/via formed in a layer of insulating material, forming a sacrificial material layer above the metal-containing material...
8603912 Power semiconductor component and method for the production thereof  
A power semiconductor component and a method for the production of a power semiconductor component are disclosed. According to one embodiment of the invention, a topmost metallization region that...
8592302 Patterning method for fabrication of a semiconductor device  
A patterning method is provided for fabrication of a semiconductor device structure having conductive contact elements, an interlayer dielectric material overlying the contact elements, an organic...
8592980 Carbon nanotube-modified low-K materials  
An interconnect structure for use in an integrated circuit is provided. The interconnect structure includes a first low-K dielectric material. The first low-K material may be modified with a first...
8592303 Wiring structure and method for manufacturing the same  
There are provided with a wiring structure and a method for manufacturing the same wherein in a wiring structure of multi-layered wiring in which a metal wiring is formed on a substrate forming a...
8581388 Multilayered wiring substrate  
A multilayered wiring substrate, comprising: a plurality of first main surface side connecting terminals arranged in a first main surface of a stack structure; and a plurality of second main...
8569166 Methods of modifying interlayer adhesion  
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a...
8569105 Passivating glue layer to improve amorphous carbon to metal adhesion  
A method and apparatus is provided for forming a resistive memory device having good adhesion among the components thereof. A first conductive layer is formed on a substrate, and the surface of...
8551877 Sidewall and chamfer protection during hard mask removal for interconnect patterning  
A method for method for removing a hard mask is described. The method includes forming at least a portion of a trench-via structure in a low-k insulation layer on a substrate using one or more...
8541302 Electronic device including a trench with a facet and a conductive structure therein and a process of forming the same  
An electronic device can include a transistor structure including a semiconductor layer overlying a substrate and a trench extending into the semiconductor layer having a tapered shape. In an...
8536067 Semiconductor device and method for manufacturing the same  
A memory element is formed by providing an organic compound between a pair of upper and lower electrodes. However, when the electrode is formed over a layer containing an organic compound, a...
8525163 Organic EL device, method for fabricating organic EL device, and organic EL illumination system  
An organic EL device 1, for example, excellent in productivity and performance with reduced influence of a voltage drop can be provided at low fabrication cost. The organic EL device 1 includes...
8513780 Semiconductor device having inter-level dielectric layer with hole-sealing and method for manufacturing the same  
The present invention discloses an inter-level dielectric layer for a semiconductor device, a method for manufacturing the same and a semiconductor device having said inter-level dielectric layer....
8497543 Semiconductor memory device and method for manufacturing same  
A semiconductor memory device includes a semiconductor substrate, a plurality of element isolations, a plurality of first stacked bodies, a second stacked body, and an interlayer insulating film....
8492266 Semiconductor device having insulating film with surface modification layer and method for manufacturing the same  
Provided is a semiconductor device, which includes an interlayer insulating film formed on a semiconductor substrate, a wiring layer filled in a recess formed in the interlayer insulating film,...
8486824 Enhancing metal/low-K interconnect reliability using a protection layer  
A protection layer is coated or otherwise formed over the interconnect structure. The interconnect structure includes a metal line (such as top and bottom metal layers connected by a metal via)...
8481423 Methods to mitigate plasma damage in organosilicate dielectrics  
Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting...
8476741 Semiconductor device  
According to one embodiment, a semiconductor device includes: a substrate; an organic insulating film provided on the substrate; an inorganic insulating film formed thinner than the organic...
8470706 Methods to mitigate plasma damage in organosilicate dielectrics  
Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting...