|
Match
|
Document |
Document Title |
|
|
7611986 |
Dual damascene patterning method
A method for patterning a dual damascene structure in a semiconductor substrate is disclosed. The patterning is a metal hardmask based pattering eliminating at least resist poisoning and further...
|
|
|
7601631 |
Very low dielectric constant plasma-enhanced CVD films
The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon...
|
|
|
7598173 |
Electro-optic displays, and components for use therein
An electro-optic display comprises a substrate ( 100 ), non-linear devices ( 102 ) disposed substantially in one plane on the substrate ( 100 ), pixel electrodes ( 106 ) connected to the non-linear...
|
|
|
7598166 |
Dielectric layers for metal lines in semiconductor chips
A semiconductor structure and methods for forming the same. The structure includes (a) a substrate; (b) a first device and a second device each being on the substrate; (c) a device cap dielectric...
|
|
|
7592249 |
Method for manufacturing a semiconductor device
A highly reliable method for forming contact plugs is provided. The method can prevent short circuiting from occurring between self aligned contact plugs and word lines or between self aligned...
|
|
|
7582555 |
CVD flowable gap fill
The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a...
|
|
|
7579647 |
Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration
First and second semiconductor regions are formed apart from each other on a semiconductor body. A stacked gate is formed on the semiconductor body between the first and second semiconductor...
|
|
|
7575999 |
Method for creating conductive elements for semiconductor device structures using laser ablation processes and methods of fabricating semiconductor device assemblies
A method for forming at least one conductive element is disclosed. Particularly, a semiconductor substrate, including a plurality of semiconductor dice thereon, may be provided and a dielectric...
|
|
|
7575981 |
Method for fabricating isolation layer in semiconductor device
A method for fabricating an isolation layer in a semiconductor device includes providing a substrate, forming a trench over the substrate, forming a liner nitride layer and a liner oxide layer...
|
|
|
7572723 |
Micropad for bonding and a method therefor
A semiconductor process is taught for performing electroless plating of copper overlying at least a portion of a layer comprising cobalt, nickel, or both cobalt and nickel. The cobalt and/or nickel...
|
|
|
7572710 |
Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of...
|
|
|
7563728 |
Methods of modifying interlayer adhesion
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method...
|
|
|
7563707 |
Laser process for reliable and low-resistance electrical contacts
Disclosed is a method for manufacturing an organic optoelectronic device. The method comprises providing a substrate, disposing a first electrode on the substrate, disposing a metal pad on the...
|
|
|
7563706 |
Material for forming insulating film with low dielectric constant, low dielectric insulating film, method for forming low dielectric insulating film and semiconductor device
A material for forming an insulating film with low dielectric constant of this invention is a solution including a fine particle principally composed of a silicon atom and an oxygen atom and having...
|
|
|
7560377 |
Plasma processes for depositing low dielectric constant films
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of...
|
|
|
7554176 |
Integrated circuits having a multi-layer structure with a seal ring
A plurality of IC regions are formed on a semiconductor wafer, which is cut into individual chips incorporating ICs, wherein wiring layers and insulating layers are sequentially formed on a silicon...
|
|
|
7553707 |
Method for manufacturing a Liquid crystal display device
The invention provides a novel technology where a TFT array substrate for a display device is formed with three photomasks. The invention is achieved by using the novel technology in combination...
|
|
|
7541277 |
Stress relaxation, selective nitride phase removal
A method for forming a dielectric cap layer over an interconnect layer formed by a back-end-of-the-line (BEOL) interconnect process, the interconnect process including: lithography, reactive ion...
|
|
|
7537964 |
Method of fabricating a miniature silicon condenser microphone
A silicon condenser microphone package includes a transducer unit, a substrate, and a cover. The substrate includes an upper surface transducer unit is attached to the upper surface of the...
|
|
|
7534721 |
Semiconductor device manufacturing device
A process for production of a semiconductor device having a multi-layer wiring of dual damascene structure in a low-dielectric constant interlayer insulating film. The process consists of the...
|
|
|
7534717 |
Method of manufacturing semiconductor device
The formation of an interlayer insulating film above a substrate, the formation of an insulating film of an organic material on the interlayer insulating film thereafter, and the irradiation of the...
|
|
|
7531444 |
Method to create air gaps using non-plasma processes to damage ILD materials
A method of forming airgaps is provided where a blocking mask is applied to a substrate to shield a portion of the substrate from a beam of energy. After irradiation, the blocking mask is removed...
|
|
|
7531432 |
Block-molded semiconductor device singulation methods and systems
The invention discloses methods and systems for singulation of block-molded arrays of semiconductor devices. Preferred embodiments include methods and associated systems for securing a block-molded...
|
|
|
7521354 |
Low k interlevel dielectric layer fabrication methods
A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide comprising interlevel dielectric layer...
|
|
|
7521353 |
Method for reducing dielectric overetch when making contact to conductive features
In a first preferred embodiment of the present invention, conductive features are formed on a first dielectric etch stop layer, and a second dielectric material is deposited over and between the...
|
|
|
7514371 |
Semiconductor substrate surface protection method
A semiconductor substrate surface protection method for maintaining surfaces thereof clean includes providing a tank containing pure water and a chemical protection material which is a high...
|
|
|
7510959 |
Method of manufacturing a semiconductor device having damascene structures with air gaps
A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. In one embodiment, the method comprises the steps of depositing and patterning a disposable...
|
|
|
7504719 |
Printed wiring board having a roughened surface formed on a metal layer, and method for producing the same
The present invention has for its object to provide a multilayer printed circuit board which is very satisfactory in facture toughness, dielectric constant, adhesion and processability, among other...
|
|
|
7504699 |
Fabrication of a semiconductor device with air gaps for ultra-low capacitance interconnections
A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a...
|
|
|
7501339 |
Methods for making dual-damascene dielectric structures
A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer over the substrate,...
|
|
|
7491658 |
Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon...
|
|
|
7485569 |
Printed circuit board including embedded chips and method of fabricating the same
A printed circuit board having embedded chips, composed of a central layer having an embedded chip, an insulating layer formed on one surface or both surfaces of the central layer and having a via...
|
|
|
7482687 |
Etch stop in a damascene interconnect structure
An interconnect structure with a plurality of low dielectric constant insulating layers acting as etch stops is disclosed. The low dielectric constant materials act as insulating layers through...
|
|
|
7482286 |
Method for forming dielectric or metallic films
Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and...
|
|
|
7482259 |
Chip structure and process for forming the same
A chip structure comprises a substrate, a first built-up layer, a passivation layer and a second built-up layer. The substrate includes many electric devices placed on a surface of the substrate....
|
|
|
7476609 |
Forming of a cavity in an insulating layer
A method for forming, by dry etch, an opening of a given shape in a silica glass layer, the layer having a doping profile similar to the shape and the etch plasma being a non-carbonated fluorinated...
|
|
|
7473652 |
Organic polymers, electronic devices, and methods
Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula:
wherein: each R 1 is independently H, an aryl group, Cl, Br, I, or an organic group...
|
|
|
7470610 |
Method of fabricating organic electroluminescent devices
A method of fabricating an organic EL device by which sealing films can be patterned, without using any wet process. The method has the steps of:
preparing a substrate 1 on which a first...
|
|
|
7456067 |
Method with high gapfill capability for semiconductor devices
A method of performing an STI gapfill process for semiconductor devices is provided. In a specific embodiment of the invention, the method includes forming an stop layer overlying a substrate. In...
|
|
|
7452802 |
Method of forming metal wiring for high voltage element
Disclosed herein is a method of forming metal wirings for high voltage elements. According to the present invention, after a copper film is formed, a wet etch process using an interlayer insulating...
|
|
|
7452795 |
Semiconductor device and method for fabricating the same
When a via-hole 26 and an interconnection trench 32 are formed in an interconnection films 16, 18 by using as a mask a hard mask 20 covering the region except via-hole forming region, and a...
|
|
|
7449408 |
Method for manufacturing semiconductor device
It is an object of the present invention to provide a method for manufacturing a semiconductor device in which a desired region can be etched by evenly applying a solution including a resist and a...
|
|
|
7446030 |
Methods for fabricating current-carrying structures using voltage switchable dielectric materials
A method is provided for fabricating current-carrying formation on substrates. The method includes providing a substrate including a layer of a voltage switchable dielectric material, forming a...
|
|
|
7442573 |
Scaffold-organized clusters and electronic devices made using such clusters
A method for forming arrays of metal, alloy, semiconductor or magnetic clusters is described. The method comprises placing a scaffold on a substrate, the scaffold comprising, for example,...
|
|
|
7439623 |
Semiconductor device having via connecting between interconnects
A first insulating film is provided between a lower interconnect and an upper interconnect. The lower interconnect and the upper interconnect are connected to each other by way of a via formed in...
|
|
|
7439179 |
Healing detrimental bonds in deposited materials
A method for healing detrimental bonds in deposited materials, for example porous, low-k dielectric materials, including oxydatively processing a deposited material, processing the deposited...
|
|
|
7435682 |
Method of manufacturing semiconductor device
Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying...
|
|
|
7435675 |
Method of providing a pre-patterned high-k dielectric film
A method of forming a pre-patterned high-k dielectric film onto a support layer. The method includes: providing a support layer; providing a template defining template openings therein exhibiting a...
|
|
|
7432190 |
Semiconductor device and manufacturing method thereof to prevent a notch
A method for manufacturing a semiconductor device includes: preparing a substrate in which a first interlayer insulation layer having a first via hole and a first trench is formed; forming a first...
|
|
|
7422975 |
Composite inter-level dielectric structure for an integrated circuit
A method is provided for making an inter-level dielectric for a microelectronic device formed on a substrate. The method begins by forming first and second spacer layers over a substrate layer. The...
|