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7619310 |
Semiconductor interconnect and method of making same
An integrated circuit interconnect structure includes a conductive line, a first barrier layer disposed on a bottom surface of conductive line, a second barrier layer disposed on the top surface of...
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7618887 |
Semiconductor device with a metal line and method of forming the same
A method of forming a metal line in a semiconductor device including forming a first insulation layer and a first etch stop layer on a conductive layer, and forming a first photosensitive layer...
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7615481 |
Method of manufacturing multilevel interconnect structure and multilevel interconnect structure
A method of manufacturing a multilevel interconnect structure using a screen printing method is disclosed. In the multilevel interconnect structure, an interlayer insulating film having a through...
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7615480 |
Methods of post-contact back end of the line through-hole via integration
Presented are methods of fabricating three-dimensional integrated circuits that include post-contact back end of line through-hole via integration for the three-dimensional integrated circuits. In...
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7611982 |
Method of forming sheet having foreign material portions used for forming multi-layer wiring board and sheet having foreign portions
The present invention relates to a laminated type electronic part and aims at providing a sheet manufacturing method and a sheet that contribute to high integration, downsizing and enhancement of...
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7601632 |
Method of forming a metal line of a semiconductor device
A first conductive layer is formed over a substrate in which contact holes are formed in an interlayer insulating layer. The first conductive layer is melted by an annealing process, thus coating...
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7601631 |
Very low dielectric constant plasma-enhanced CVD films
The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon...
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7601577 |
Work function control of metals
Forming metal gate transistors that have different work functions is disclosed. In one example, a first metal, which is a ‘mid gap’ metal, is manipulated in first and second regions by second...
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7598174 |
Feature patterning methods
Methods of patterning features, methods of patterning material layers of semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a method of...
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7598167 |
Method of forming vias in semiconductor substrates without damaging active regions thereof and resulting structures
Methods for forming through vias in a semiconductor substrate and resulting structures are disclosed. In one embodiment, a through via may be formed by forming a partial via from the active surface...
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7598166 |
Dielectric layers for metal lines in semiconductor chips
A semiconductor structure and methods for forming the same. The structure includes (a) a substrate; (b) a first device and a second device each being on the substrate; (c) a device cap dielectric...
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7598165 |
Methods for forming a multiplexer of a memory device
A method of forming a portion of a multiplexer of a memory device includes forming a plurality of conductive plugs on a semiconductor substrate and forming first and second bit lines overlying the...
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7595269 |
Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer
By forming a tin and nickel-containing copper alloy on an exposed copper surface, which is treated to have a copper oxide thereon, a reliable and highly efficient capping layer may be provided. The...
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7592252 |
Versatile system for charge dissipation in the formation of semiconductor device structures
The present invention provides a system for dissipating any aberrant charge that may accumulate during the fabrication of a semiconductor device segment ( 200 ), obviating overstress or break down...
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7592250 |
Multilayer wiring board, manufacturing method thereof, semiconductor device, and wireless electronic device
A multilayer wiring board exhibiting excellent moldability and having a capacitor where variation of capacitance is suppressed, its producing method, a semiconductor device mounting a semiconductor...
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7592248 |
Method of forming semiconductor device having nanotube structures
A semiconductor device having upright dielectric nanotubes at an inter-layer dielectric level and method of manufacturing such a device is disclosed. The use of a catalyst is proposed in the...
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7589014 |
Semiconductor device having multiple wiring layers and method of producing the same
A method of producing a semiconductor device having a plurality of wiring layers forms a first interlayer-insulating film, forms a plurality of grooves for wiring in the first interlayer-insulating...
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7589013 |
Electrode structure and method of manufacturing the same, phase-change memory device having the electrode structure and method of manufacturing the same
Example embodiments of the present invention relate to an electrode structure, a method of manufacturing the electrode structure, a phase-change memory device having the electrode structure and a...
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7589011 |
Semiconductor device and method of forming intermetal dielectric layer
There is provided a semiconductor device in which extension units are formed in the ends of a slit that constitutes a slit pattern to relieve stress transmitted between interconnect layers. The...
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7589008 |
Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces having such interconnects are disclosed herein. One aspect of the invention is directed toward a...
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7588950 |
Test pattern for reliability measurement of copper interconnection line having moisture window and method for manufacturing the same
Disclosed is a test pattern for a reliability measurement of a copper interconnection line having a moisture window and a method for manufacturing the same. The method includes the steps of: a...
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7586194 |
Semiconductor device having exposed heat dissipating metal plate
A semiconductor device including; a bottom plate having a laminated structure in which between a first and a second metal plates a third metal plate harder than these metal plates is clipped, a...
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7586175 |
Semiconductor wafer having embedded electroplating current paths to provide uniform plating over wafer surface
A semiconductor wafer having multi-layer metallization structures that are fabricated to include embedded interconnection structures which serve as low-resistance electroplating current paths to...
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7585763 |
Methods of fabricating integrated circuit devices using anti-reflective coating as implant blocking layer
A patterned anti-reflective coating may be used as a selective implant-blocking layer during fabrication of an integrated circuit transistor. In particular, the anti-reflective coating may be used...
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7585758 |
Interconnect layers without electromigration
A structure and a method for forming the same. The structure includes (a) an interlevel dielectric (ILD) layer; (b) a first electrically conductive line and a second electrically conductive line...
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7579278 |
Topography directed patterning
A pattern having exceptionally small features is formed on a partially fabricated integrated circuit during integrated circuit fabrication. The pattern comprises features formed by self-organizing...
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7579270 |
Method for manufacturing a semiconductor device
It is an object of the present invention to provide a method for manufacturing a highly reliable semiconductor device with preferable yield. In the invention, two-step etching is performed when...
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7576405 |
Semiconductor integrated circuit for reducing leak current through MOS transistors
A semiconductor device is composed of: a power control region within which function cells are arranged; a basic power supply line overlapping said power control region, and positioned in a power...
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7576382 |
Semiconductor integrated device and method of providing shield interconnection therein
A method of providing shield interconnection, the method shielding an interconnection pattern to be shielded with shield interconnection patterns for shielding on the substrate of a semiconductor...
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7575999 |
Method for creating conductive elements for semiconductor device structures using laser ablation processes and methods of fabricating semiconductor device assemblies
A method for forming at least one conductive element is disclosed. Particularly, a semiconductor substrate, including a plurality of semiconductor dice thereon, may be provided and a dielectric...
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7575995 |
Method of forming fine metal pattern and method of forming metal line using the same
There are provided a method of forming a fine metal pattern and a method of forming a metal line using the same. In the method of forming a fine metal pattern, a substrate is prepared where a first...
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7575981 |
Method for fabricating isolation layer in semiconductor device
A method for fabricating an isolation layer in a semiconductor device includes providing a substrate, forming a trench over the substrate, forming a liner nitride layer and a liner oxide layer...
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7572710 |
Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of...
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7569845 |
Phase-change memory and fabrication method thereof
A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first...
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7569477 |
Method for fabricating fine pattern in semiconductor device
A method for fabricating a fine pattern in a semiconductor device includes forming a first photoresist pattern over an etch target layer, forming a first hard mask layer over a substrate structure,...
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7569476 |
Semiconductor integrated circuit device and a method of manufacturing the same
In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a...
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7566650 |
Integrated circuit solder bumping system
An integrated circuit solder bumping system provides a substrate and forms a redistribution layer on the substrate. An insulation layer is formed on the redistribution layer. The insulation layer...
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7563730 |
Hafnium lanthanide oxynitride films
Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide...
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7563728 |
Methods of modifying interlayer adhesion
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method...
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7563705 |
Manufacturing method of semiconductor device
A manufacturing method of a semiconductor device including a step of forming a via hole in an insulation layer including an organic low dielectric film, such as MSQ, SiC, and SiCN, and then...
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7563704 |
Method of forming an interconnect including a dielectric cap having a tensile stress
An interconnect structure and method of making the same are provided. The interconnect structure includes a dielectric layer having a patterned opening, a metal feature disposed in the patterned...
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7563701 |
Self-aligned contacts for transistors
Self-aligned contacts for transistors and methods for fabricating the contacts are described. An etch resistant material is patterned to create an opening that resides above a transistor gate...
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7560376 |
Method for adjoining adjacent coatings on a processing element
Two or more coatings applied to processing elements of a plasma processing system are treated with protective barriers or coatings. A method is described for adjoining two or more coatings on the...
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7560375 |
Gas dielectric structure forming methods
Methods of forming a gas dielectric structure for a semiconductor structure by using a sacrificial layer. In particular, one embodiment of the invention includes forming an opening for...
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7557447 |
Semiconductor device and method for manufacturing same
An improved migration resistance of the interconnect is provided and a diffusion of silicon into the inside of the interconnect is suppressed. A semiconductor device includes a silicon substrate, a...
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7557025 |
Method of etching a dielectric layer to form a contact hole and a via hole and damascene method
A method of etching a dielectric layer by a conductive mask includes providing the dielectric layer on a substrate, forming a pattern conductive mask on the dielectric layer, the pattern conductive...
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7554176 |
Integrated circuits having a multi-layer structure with a seal ring
A plurality of IC regions are formed on a semiconductor wafer, which is cut into individual chips incorporating ICs, wherein wiring layers and insulating layers are sequentially formed on a silicon...
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7554145 |
Magnetic memory cells and manufacturing methods
An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced...
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7553756 |
Process for producing semiconductor integrated circuit device
An object of the present invention is to prevent formation of a badly situated via metal in a Damascene wiring portion in multiple layers having an air-gap structure. In the present invention, a...
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7553755 |
Method for symmetric deposition of metal layer
A method for symmetric deposition of metal layer over a metal layer registration key comprises using MOCVD to form the metal layer. Once the symmetric metal layer is formed, a metal layer...
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