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Match Document Document Title
7622378 Multi-step system and method for curing a dielectric film  
A multi-step system and method for curing a dielectric film in which the system includes a drying system configured to reduce the amount of contaminants, such as moisture, in the dielectric film....
7601630 Semiconductor device and method for fabricating the same  
A method of fabricating a semiconductor memory device and a structure that forms both a resistor and an etching protection layer to reduce a contact resistance. The method of fabricating a...
7598174 Feature patterning methods  
Methods of patterning features, methods of patterning material layers of semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a method of...
7592263 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device. In this method, a concave portion is formed in one surface in the thickness direction of a primary base plate comprising a semiconductor substrate...
7585758 Interconnect layers without electromigration  
A structure and a method for forming the same. The structure includes (a) an interlevel dielectric (ILD) layer; (b) a first electrically conductive line and a second electrically conductive line...
7582560 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device includes preparing a substrate comprising a first surface and a second surface formed at a lower position than the first surface, forming an...
7579278 Topography directed patterning  
A pattern having exceptionally small features is formed on a partially fabricated integrated circuit during integrated circuit fabrication. The pattern comprises features formed by self-organizing...
7579270 Method for manufacturing a semiconductor device  
It is an object of the present invention to provide a method for manufacturing a highly reliable semiconductor device with preferable yield. In the invention, two-step etching is performed when...
7566651 Low contact resistance metal contact  
A semiconductor structure and methods of making the same. The semiconductor structure includes a substrate having a silicide region disposed above a doped region, and a metal contact extending...
7563714 Low resistance and inductance backside through vias and methods of fabricating same  
A backside contact structure and method of fabricating the structure. The method includes: forming a dielectric isolation in a substrate, the substrate having a frontside and an opposing backside;...
7563709 Pattern formation method and method for forming semiconductor device  
A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing...
7560375 Gas dielectric structure forming methods  
Methods of forming a gas dielectric structure for a semiconductor structure by using a sacrificial layer. In particular, one embodiment of the invention includes forming an opening for...
7560016 Selectively accelerated plating of metal features  
To make a metal feature, a non-plateable layer is applied to a workpiece surface and then patterned to form a first plating region and a first non-plating region. Then, metal is deposited on the...
7557039 Method for fabricating contact hole of semiconductor device  
A method for forming a contact hole of a semiconductor device includes: forming a lower pattern over a substrate; forming a spin-on-glass (SOG) layer over the lower pattern; performing a first...
7553755 Method for symmetric deposition of metal layer  
A method for symmetric deposition of metal layer over a metal layer registration key comprises using MOCVD to form the metal layer. Once the symmetric metal layer is formed, a metal layer...
7553754 Electronic device, method of manufacture of the same, and sputtering target  
In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the...
7547594 Metal-oxide-semiconductor transistor and method of forming the same  
A method of forming a metal-oxide-semiconductor (MOS) transistor device is provided. First, a semiconductor substrate is prepared. Subsequently, a gate structure is formed on the semiconductor...
7545034 Thermal energy removal structure and method  
An electrical structure including a first substrate comprising a plurality of electrical components, a first thermally conductive film layer formed over and in contact with a first electrical...
7541277 Stress relaxation, selective nitride phase removal  
A method for forming a dielectric cap layer over an interconnect layer formed by a back-end-of-the-line (BEOL) interconnect process, the interconnect process including: lithography, reactive ion...
7534722 Back-to-front via process  
A method performed on a semiconductor chip having a doped semiconductor material abutting a substrate involves creating a first via through at least a portion of the substrate extending from an...
7531445 Formation of through-wafer electrical interconnections and other structures using a thin dielectric membrane  
Providing through-wafer interconnections in a semiconductor wafer includes forming a sacrificial membrane in a pre-existing semiconductor wafer, depositing metallization over one side of the wafer...
7528895 Liquid crystal display device and method for making the same  
A method for manufacturing a substrate of a TFT LCD device is disclosed with following steps: providing a transparent substrate having a thin film transistors area and a storing capacitor area;...
7528066 Structure and method for metal integration  
An interconnect structure including a gouging feature at the bottom of one of the via openings and a method of forming the same are provided. In accordance with the present invention, the method of...
7524751 Method for forming contact hole in semiconductor device  
Methods for forming a contact hole in a semiconductor device are provided. An exposed portion of an isolation layer, which may be generated during a process of forming a borderless contact hole,...
7514352 Method of manufacturing a semiconductor device having an interconnect structure that increases in impurity concentration as width increases  
The present invention provides a semiconductor device capable of suppressing an increase in electrical resistance of a narrow interconnect, while keeping reliability of a wide interconnect from...
7511939 Layered capacitor architecture and fabrication method  
A layered capacitor structure comprises two or more semiconductor/dielectric plates formed above an insulating surface which provides mechanical support, with the plates arranged in a vertical...
7510960 Bridge for semiconductor internal node  
A method and apparatus for forming connections within a semiconductor device is disclosed. The semiconductor device incorporates a contact bridge between transistor contacts in close proximity. The...
7507664 Tungsten plug corrosion prevention method using ionized air  
Disclosed herein is a method of making integrated circuits. In one embodiment the method includes forming tungsten plugs in the integrated circuit and forming electrically conductive interconnect...
7504287 Methods for fabricating an integrated circuit  
A method is provided for fabricating a semiconductor device which includes a first contact point and a second contact point located above the first contact point. A first material layer is...
7498622 Latchup robust gate array using through wafer via  
A structure and a method for preventing latchup in a gate array. The structure including: a NFET gate array and a PFET gate array in a substrate; an electrically conductive through via extending...
7494867 Semiconductor device having MIM capacitive elements and manufacturing method for the same  
A method for manufacturing a semiconductor device is provided. The method includes forming a lower interconnection on a semiconductor substrate; forming a first interlayer insulation film in which...
7473631 Method of forming contact holes in a semiconductor device having first and second metal layers  
An exemplary method of forming a contact hole in a semiconductor device includes: forming a first insulation layer on a lower substrate; forming a first conductive layer on the first insulation...
7470616 Damascene wiring fabrication methods incorporating dielectric cap etch process with hard mask retention  
Methods for fabricating metal wiring layers of a semiconductor device are provided where damascene interconnect structures are formed in a BEOL process that incorporates a dielectric cap-open-first...
7465662 Method of making semiconductor device  
A semiconductor device is manufactured by a method including forming a first interlayer insulating film. A first etching stopper film is formed on the first interlayer insulating film. A conductive...
7405151 Method for forming a semiconductor device  
A method for forming a semiconductor device is described. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN...
7393773 Method and apparatus for producing co-planar bonding pads on a substrate  
A method and apparatus for producing a substrate having a plurality of substantially co-planar bonding pads is provided. The substrate is employed in a probe apparatus used in wafer testing of...
7390741 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device comprises the steps of: forming interconnection grooves 38 in an inter-layer insulation film 34 ; forming an interconnection layer 44 of Cu as...
7378339 Barrier for use in 3-D integration of circuits  
A method for forming a semiconductor device includes providing a first integrated circuit having a landing pad and attaching a second integrated circuit to the first integrated circuit using at...
7378330 Cleaving process to fabricate multilayered substrates using low implantation doses  
A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer...
7365384 Trench buried bit line memory devices and methods thereof  
A memory device includes isolation trenches that are formed generally parallel to and along associated strips of active area. A conductive bit line is recessed within each isolation trench such...
7365004 Method for manufacturing semiconductor device  
The invention is aimed to prevent that fall of characteristic of a solar battery and producing yield caused by particles of powder condition generating from working part at laser beam process in...
7354852 Method of forming interconnection in semiconductor device  
A multilayer interconnection structure is formed by a method comprising the steps of: Forming a low dielectric constant film on a substrate, curing the low dielectric constant film by irradiating...
7348279 Method of making an integrated circuit, including forming a contact  
In order to form a contact in a layer on a substrate, in particular a contact in a logic circuit in a semiconductor component, the mask layer is structured for etching of the contact holes with a...
7335517 Multichip semiconductor device, chip therefor and method of formation thereof  
A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film...
7326642 Method of fabricating semiconductor device using low dielectric constant material film  
The semiconductor device is capable of coping with speedup of operation using a low dielectric constant material film other than silicon. The base ( 10 ) formed by the substrate ( 11 ) and the low...
7316971 Wire bond pads  
A wire bond pad and method of fabricating the wire bond pad. The method including: providing a substrate; forming an electrically conductive layer on a top surface of the substrate; patterning the...
7312145 Electronic member, method for making the same, and semiconductor device  
The present invention provides an electronic device having high insulating reliability, in which metal portions of a circuit are not electrically conductive with each other via an adhesive layer...
7307012 Post vertical interconnects formed with silicide etch stop and method of making  
A method to form a vertical interconnect advantageous for high-density semiconductor devices. A conductive etch stop layer, preferably of cobalt silicide, is formed. The etch stop layer may be in...
7304387 Semiconductor integrated circuit device  
Provided are a semiconductor integrated device and a method for fabricating the same. The semiconductor integrated circuit includes a semiconductor substrate including a first dopant, a first...
7301236 Increasing electromigration lifetime and current density in IC using vertically upwardly extending dummy via  
An integrated circuit with increased electromigration lifetime and allowable current density and methods of forming same are disclosed. In one embodiment, an integrated circuit includes a...
Matches 1 - 50 out of 264 1 2 3 4 5 6 >