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9039940 Conductive paste and electronic device, and solar cell including an electrode formed using the conductive paste  
A conductive paste may include a conductive component and an organic vehicle. The conductive component may include an amorphous metal. The amorphous metal may have a lower resistivity after a...
9040414 Semiconductor devices and methods of manufacturing the same  
A semiconductor device and methods directed toward preventing a leakage current between a contact plug and a line adjacent to the contact plug, and minimizing capacitance between adjacent lines.
9040415 Semiconductor device and method of fabricating the same  
A method for forming a trench includes etching an oxide layer to form a trench therein, conformally forming a first reaction layer along a surface of the trench, the first reaction layer including...
9034664 Method to resolve hollow metal defects in interconnects  
A method of repairing hollow metal void defects in interconnects and resulting structures. After polishing interconnects, hollow metal void defects become visible. The locations of the defects are...
9029193 Semiconductor device and method of forming an interconnect structure for 3-D devices using encapsulant for structural support  
A semiconductor device has a first interconnect structure formed over a first side of a substrate. A semiconductor die is mounted to the first interconnect structure. An encapsulant is deposited...
9018092 Encapsulated metal interconnect  
A plurality of metal tracks are formed in an integrated circuit die in three metal layers stacked within the die. A protective dielectric layer is formed around metal tracks of an intermediate...
9018089 Multiple step anneal method and semiconductor formed by multiple step anneal  
A method of annealing a semiconductor and a semiconductor. The method of annealing including heating the semiconductor to a first temperature for a first period of time sufficient to remove...
9018090 Borderless self-aligned metal contact patterning using printable dielectric materials  
Borderless self-aligned metal contacts to high density complementary metal oxide semiconductor (CMOS) circuits and methods for constructing the same. An example method includes creating an...
9006039 Fabrication method of packaging substrate, and fabrication method of semiconductor package  
A fabrication method of a packaging substrate includes: providing a metal board having a first surface and a second surface opposite to the first surface, wherein the first surface has a plurality...
8999740 Solar cell  
A solar cell according to an embodiment of the invention includes a substrate configured to have a plurality of via holes and a first conductive type, an emitter layer placed in the substrate and...
9000594 Use of graphene to limit copper surface oxidation, diffusion and electromigration in interconnect structures  
A contiguous layer of graphene is formed on exposed sidewall surfaces and a topmost surface of a copper-containing structure that is present on a surface of a substrate. The presence of the...
8999827 Semiconductor device manufacturing method  
A method of manufacturing a semiconductor device, includes: forming a first and second interconnect trenches adjacent to each other in an interlayer insulating film; providing a first interconnect...
8993439 Method of manufacturing a semiconductor device  
A method of manufacturing a semiconductor device, including forming a molding layer; forming a damascene mask layer and mask layer on the molding layer; forming a mask layer pattern by etching the...
8987079 Method for developing a custom device  
A method for developing a custom device, the method including: programming a programmable device, where the programmable device includes a layer of monocrystalline first transistors and alignment...
8987923 Semiconductor seal ring  
Among other things, a semiconductor seal ring and method for forming the same are provided. The semiconductor seal ring comprises a plurality of dielectric layers formed over a semiconductor...
8987131 Formation of through-silicon via (TSV) in silicon substrate  
To form a through-silicon via (TSV) in a silicon substrate without using plating equipment or using sputtering equipment or small metal particles, and form an interlayer connection by stacking a...
8980708 Complementary back end of line (BEOL) capacitor  
A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer...
8980689 Method of fabricating semiconductor multi-chip stack packages  
Provided is a method of fabricating a multi-chip stack package. The method includes preparing single-bodied lower chips having a single-bodied lower chip substrate having a first surface and a...
8975147 Enhanced work function layer supporting growth of rutile phase titanium oxide  
This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for...
8975178 Method of manufacturing a memory device using fine patterning techniques  
According to one embodiment, a method of manufacturing a device, includes forming a first core including a line portion extending between first and second regions and having a first width and a...
8975116 Electronic assembly including an embedded electronic component  
An electronic unit is produced including at least one electronic component at least partially embedded in an insulating material. A film assembly is provided with at least one conductive layer and...
8963328 Reducing delamination between an underfill and a buffer layer in a bond structure  
A die includes a metal pad, a passivation layer, and a patterned buffer layer over the passivation layer. The patterned buffer layer includes a plurality of discrete portions separated from each...
8959764 Metallurgical clamshell methods for micro land grid array fabrication  
A structure and method for manufacturing the same for manufacturing a contact structure for microelectronics manufacturing including the steps of forming first and second metal sheets to form a...
8963342 Structures, architectures, systems, methods, algorithms and software for configuring an integrated circuit for multiple packaging types  
Structures, architectures, systems, an integrated circuit, methods and software for configuring an integrated circuit for multiple packaging types and/or selecting one of a plurality of packaging...
8962482 Multi-layer interconnect with isolation layer  
An integrated circuit interconnect is fabricated by using a mask to form a via in an insulating layer for a conductive plug. After the plug is formed in the via, a thin (e.g., <100 nm) isolation...
8952538 Semiconductor device and method for manufacturing the same  
A semiconductor device includes: an integrated circuit having an electrode pad; a first insulating layer disposed on the integrated circuit; a redistribution layer including a plurality of wirings...
8951906 Method of forming a through-silicon via utilizing a metal contact pad in a back-end-of-line wiring level to fill the through-silicon via  
A method for fabricating through-silicon vias (TSVs) for semiconductor devices is provided. Specifically, the method involves utilizing copper contact pads in a back-end-of-line wiring level,...
8946912 Active area bonding compatible high current structures  
A semiconductor structure comprises a top metal layer, a bond pad formed on the top metal layer, a conductor formed below the top metal layer, and an insulation layer separating the conductor from...
8941090 Resistive memory device, method of fabricating the same, and memory apparatus and data processing system having the same  
A resistive memory device capable of implementing a multi-level cell, a method of fabricating the same, and a memory apparatus and data processing system including the same are provided. The...
8940631 Methods of forming coaxial feedthroughs for 3D integrated circuits  
Methods of forming coaxial feedthroughs for 3d integrated circuits that provide excellent isolation of signal paths from the substrate and from adjacent feedthroughs. One method is to form a...
8937009 Far back end of the line metallization method and structures  
Disclosed are a method for metallization during semiconductor wafer processing and the resulting structures. In this method, a passivation layer is patterned with first openings aligned above and...
8936960 Method for fabricating an integrated device  
A method for fabricating an integrated device includes the following steps. First, a multi-layered structure is formed on a substrate, wherein the multi-layered structure is embedded in a lower...
8927416 Semiconductor device and method of manufacturing the same  
A first insulating film is formed on a semiconductor substrate, an interconnect groove is formed in the first insulating film, the inside of the interconnect groove is filled with a metal film,...
8927420 Mechanism of forming semiconductor device having support structure  
Among other things, one or more support structures and techniques for forming such support structures within semiconductor devices are provided. The support structure comprises an oxide infused...
8927345 Device package with rigid interconnect structure connecting die and substrate and method thereof  
A method comprises fabricating an interconnect structure comprising a plurality of conductive interconnects encased in a dielectric structure and coupling each of the conductive interconnects to a...
8912060 Method for manufacturing semiconductor device and apparatus for manufacturing same  
A method for manufacturing a semiconductor device includes: forming a first layer on a substrate; forming a first contact hole in the first layer; burying a sacrificial film in the first contact...
8912540 Semiconductor device  
Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and...
8912088 Transfer substrate for forming metal wiring and method for forming metal wiring using said transfer substrate  
The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal...
8906799 Random local metal cap layer formation for improved integrated circuit reliability  
A method and structure for preventing integrated circuit failure due to electromigration and time dependent dielectric breakdown is disclosed. A randomly patterned metal cap layer is selectively...
8906757 Methods of forming patterns of a semiconductor device  
Methods of forming patterns of a semiconductor device are provided. The methods may include forming a hard mask film on a semiconductor substrate. The methods may include forming first and second...
8906800 Stacked digital/RF system-on-chip with integral isolation layer  
An apparatus includes a device package, a first Integrated Circuit (IC) that is packaged in the device package, and a second IC, which is packaged in the device package and is fabricated on a...
8900996 Through silicon via structure and method of fabricating the same  
A method of fabricating a through silicon via (TSV) structure is provided, in which, a first dielectric layer is formed on the substrate, the first dielectric layer is patterned to have at least...
8901744 Hybrid copper interconnect structure and method of fabricating same  
A hybrid interconnect structure containing copper regions that have different impurities levels within a same opening is provided. In one embodiment, the interconnect structure includes a...
8896120 Structures and methods for air gap integration  
Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect...
8889542 Method of forming a through-silicon via utilizing a metal contact pad in a back-end-of-line wiring level to fill the through-silicon via  
A method for fabricating through-silicon vias (TSVs) for semiconductor devices is provided. Specifically, the method involves utilizing copper contact pads in a back-end-of-line wiring level,...
8889541 Reduced short channel effect of III-V field effect transistor via oxidizing aluminum-rich underlayer  
In one embodiment, a method of forming a semiconductor device is provided that may include forming a semiconductor device including a gate structure on a channel portion of III-V semiconductor...
8888916 Thermal reactor with improved gas flow distribution  
Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for...
8890240 Apparatus and method for power MOS transistor  
A MOS transistor comprises a substrate, a first region formed over the substrate, a second region grown from the first region, a third region of formed in the second region, a first drain/source...
8883629 Adjustable dummy fill  
A method of placing a dummy fill layer on a substrate is disclosed (FIG. 2). The method includes identifying a sub-region of the substrate (210). A density of a layer in the sub-region is...
8878364 Method for fabricating semiconductor device and semiconductor device  
A method for fabricating a semiconductor device according to an embodiment, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a high melting...