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7615868 Electrode, method for producing same and semiconductor device using same  
There is provided a technology for obtaining an electrode having a low contact resistance and less surface roughness. There is provided an electrode comprising a semiconductor film 101 , and a...
7611979 Metal gates with low charge trapping and enhanced dielectric reliability characteristics for high-k gate dielectric stacks  
A multilayered gate stack having improved reliability (i.e., low charge trapping and gate leakage degradation) is provided. The inventive multilayered gate stack includes, from bottom to top, a...
7576706 Image display device including two display panels and method of manufacturing the same  
An image display device includes a driving unit to provide first and second image signals and first and second control signals to display images, a first display unit to display first images in...
7550374 Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same  
Disclosed herein is a technique for forming a high quality ohmic contact utilizable in the fabrication of short-wavelength light emitting diodes (LEDs) emitting blue and green visible light and...
7544603 Method of fabricating silicon nitride layer and method of fabricating semiconductor device  
A method of fabricating a silicon nitride layer is described. First, a substrate is provided. Then, a silicon nitride layer is formed on the substrate. The silicon nitride layer is UV-cured in an...
7514349 Semiconductor optical device and manufacturing method thereof  
The object of the invention is to reduce the deterioration of crystallinity in the vicinity of an active layer when C, which is a p-type dopant, is doped and to suppress the diffusion of Zn, which...
7476606 Eutectic bonding of ultrathin semiconductors  
Ultra-high speed semiconductors that are usually very thin and therefore very fragile still require connection to a circuit board and a heat transfer pathway. Ultra-high speed circuits and...
7303933 Process of manufacturing a semiconductor device  
A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different...
7101780 Method for manufacturing Group-III nitride compound semiconductor device  
After a p-seat electrode-forming layer is laminated onto a light-transmissive electrode-forming layer, a first heating step and a second heating step are carried out for alloying the two layers. In...
7081401 Method of fabricating a p-type ohmic electrode in gallium nitride based optical device  
A p-type ohmic electrode in a gallium nitride based(GaN based) optical device and a fabrication method thereof. The p-type ohmic electrode in a GaN based optical device is fabricated using a rutile...
7071508 Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions  
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A...
7033949 Structure and manufacturing method for nitride-based light-emitting diodes  
A method for manufacturing a GaN-based light-emitting diode (LED) is provided with the following steps of: providing a substrate; forming a GaN semiconductor epitaxy layer on the substrate, the GaN...
6998331 Methods for fabricating three dimensional anisotropic thin films and products produced thereby  
A three dimensional structure comprising at least two materials capable of being deposited by vapor deposition. The structure is fabricated by the controlled vapor deposition of the materials onto...
6946313 Method of making an aligned electrode on a semiconductor structure  
A method of making an electrode on a semiconductor device including depositing metal on a top surface of a semiconductor structure, and defining a first region of the semiconductor structure for a...
6933220 Thyristor switch for microwave signals  
A thyristor for switching microwave signals includes semiconductor layers disposed on a substrate. A first surface of the thyristor defines an anode, and a second surface of the thyristor defines a...
6920167 Semiconductor laser device and method for fabricating thereof  
A semiconductor laser device has on a compound semiconductor substrate at least a lower cladding layer, an active layer, an upper cladding layer and a contact layer. An upper part of the upper...
6897137 Process for fabricating ultra-low contact resistances in GaN-based devices  
A process for fabricating ohmic contacts in a field-effect transistor includes the steps of: thinning a semiconductor layer forming recessed portions in the semiconductor layer; depositing ohmic...
6867120 Method of fabricating a semiconductor device with a gold conductive layer and organic insulating layer  
In a semiconductor device, particles are removed from the surface of a gold conductive layer before an intermediate insulating layer of an amino silane compound is formed. An organic insulating...
6835636 Method for fabricating source/drain devices  
A method for fabricating source/drain devices. A semiconductor substrate is provided with a gate formed on the semiconductor substrate, and a hard mask layer formed on the gate. A first doped area...
6828599 Semiconductor light-emitting diode  
The present invention relates to a semiconductor LED device comprising a pumping layer with high light emitting efficiency and an active layer with smaller bandgap converting the absorbed light...
6774025 Method for producing group III nitride compound semiconductor light-emitting element  
After a p seat electrode is laminated on a light-transmissive electrode, the two electrodes are heated at a relatively low temperature to thereby remove gas (degassing) from between the two...
6734033 Ultraviolet light emitting diode  
A light emitting diode is disclosed. The diode includes a silicon carbide substrate having a first conductivity type, a first gallium nitride layer above the SiC substrate having the same...
6734091 Electrode for p-type gallium nitride-based semiconductors  
An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The...
6653215 Contact to n-GaN with Au termination  
A contact for n-type III-V semiconductor such as GaN and related nitride-based semiconductors is formed by depositing Al,Ti,Pt and Au in that order on the n-type semiconductor and annealing the...
6610589 Semiconductor light emitting device and method of manufacturing the same  
A semiconductor lamination including an n-type layer and a p-type layer composed of a gallium nitride based compound semiconductor and forming a light emitting region is formed on the surface of a...
6589850 Method and system for fabricating a bipolar transistor and related structure  
One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over...
6555456 Method of forming iridium conductive electrode/barrier structure  
A conductive barrier, useful as a ferroelectric capacitor electrode, having high temperature stability has been provided. This conductive barrier permits the use of iridium (Ir) metal in IC...
6555457 Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit  
A novel contact structure and method for a multilayer gettering contact metallization is provided utilizing a thin layer of a pure metal as the initial layer formed on a semiconductor cap layer....
6429111 Methods for fabricating an electrode structure  
The electrode structure of the invention includes a p-type Al x Ga y In 1−x−y N (0≦x≦1, 0≦y≦1, x+y≦1) semiconductor layer and an electrode layer formed on the semiconductor layer. In...
6380064 Semiconductor devices and process for producing the same  
A semiconductor device having a semiconductor substrate and a wiring layer, which is doped with an impurity, located on the substrate. The semiconductor device has upper and lower wiring layers...
6326294 Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices  
A method of fabricating on ohmic metal electrode. The p-type ohmic metal electrode according to the present invention employs Ru and RuO x as the cover layer in lieu of conventional Au, in order...
6319809 Method to reduce via poison in low-k Cu dual damascene by UV-treatment  
A method to reduce via poisoning in low-k copper dual damascene interconnects through ultraviolet (UV) irradiation of the damascene structure is disclosed. This is accomplished by irradiating the...
6294446 Methods of manufacturing a high electron mobility transistor with a T-shaped gate electrode  
A high electron mobility transistor includes a channel layer for developing therein an electron gas layer having a substantially uniform electron gas density, and upper and lower high-resistance...
6287947 Method of forming transparent contacts to a p-type GaN layer  
A method of forming a light-transmissive contact on a p-type Gallium nitride (GaN) layer of an optoelectronic device includes in one embodiment, introducing a selected metal in an oxidized...
6255671 Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair  
A structure includes a metal nitride film of the form MN, where M is selected from the group consisting of Ga, In, AlGa, AlIn, and AlGaIn. The structure has at least one electrically conductive...
6228673 Method of fabricating a surface coupled InGaAs photodetector  
A photodetector is fabricated in a multilayer structure having a semi-insulating InP substrate, an n+ InP contact layer overlying the InP substrate, an undoped InGaAs absorbing layer overlying the...
6197675 Manufacturing method for semiconductor device having contact holes of different structure  
A semiconductor memory device comprises a semiconductor substrate, a first conducting layer formed above the main surface of the semiconductor substrate, a second conducting layer formed above the...
6165859 Method for making InP heterostructure devices  
The specification describes a metal contact material optimized for diffused contacts to the buried emitter-base junction in DHBT devices. The metal contact material is a multilayer structure of...
6110813 Method for forming an ohmic electrode  
A first metal film and a second metal film, both of which are made of Ni or the like, are deposited on the upper surface of a substrate made of SiC. In such a state, the interface between the first...
6100174 GaN group compound semiconductor device and method for producing the same  
A GaN group compound semiconductor device includes an electrode structure provided on a p-GaN group compound semiconductor layer, the electrode structure including: a first layer formed on the...
6033976 Ohmic electrode, its fabricating method and semiconductor device  
It is intended to realize an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics. Provided on an n + -type GaAs...
6001716 Fabricating method of a metal gate  
A method of fabricating a metal gate includes forming a gate insulating layer on a provided substrate, forming a PVD titanium nitride layer on the gate insulating layer, forming a CVD titanium...
5966629 Method for fabricating an electrode structure  
The electrode structure of the invention includes a p-type Al x Ga y In 1 -x-y N (0≤x≤1, 0≤y≤1, x+y≤1) semiconductor layer and an electrode layer formed on the semiconductor layer. In...
5956604 Ohmic contact to Gallium Arsenide using epitaxially deposited Cobalt Digermanide  
A partially ionized beam (PIB) deposition technique is used to heteroepitally deposit a thin film of CoGe 2 (001) on GaAs (100) substrates 14. The resulting epitaxial arrangement is CoGe 2 (001)...
5904554 Method for fabricating ohmic electrode and multi-layered structure for ohmic fabricating electrode  
An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics is disclosed. A non-single crystal InAs layer, Ni film, WSi film...
5863835 Methods of forming electrical interconnects on semiconductor substrates  
Methods of forming electrical interconnects on semiconductor substrates include the steps of forming a first electrically insulating layer (e.g., silicon dioxide) and then forming a contact hole in...
5770489 Method of making a compound semiconductor field-effect transistor  
A fabrication method of a compound semiconductor FET that enables to produce source/drain electrodes and a gate electrode at any positions flexibly without increase of the number of necessary...
5731224 Method for manufacturing ohmic contacts for compound semiconductors  
A method for manufacturing ohmic contacts on an n-doped semiconductor layer of a III-V compound semiconductor. An AuGeNi layer is formed on the n-type III-V compound semiconductor, where the...
5683937 Method of making a semiconductor device  
A semiconductor device includes a rectangular semiconductor chip having a main surface, a stripe-form semiconductor element forming portion formed in parallel to one of sides of the semiconductor...
5670385 Method for fabricating an optical controlled resonant tunneling oscillator  
An optical controlled resonant tunneling oscillator utilizing variation of a resonant tunneling oscillator in accordance with a negative differential resistance, a series resistance and a static...
Matches 1 - 50 out of 143 1 2 3 >