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8993368 Method for manufacturing an opto-microelectronic device  
Method for manufacturing a microelectronic device from a first substrate (10), including the production of at least one electronic component in the semi-conductor substrate after transferring the...
8987041 Method for manufacturing solid-state imaging device  
Certain embodiments provide method for manufacturing a solid-state imaging device, including forming an electrode and forming a second impurity layer. The electrode is formed on a semiconductor...
8946795 Backside-illuminated (BSI) image sensor with reduced blooming and electrical shutter  
Embodiments of a pixel including a photosensitive region formed in a surface of a substrate and an overflow drain formed in the surface of the substrate at a distance from the photosensitive area,...
8921187 Process to eliminate lag in pixels having a plasma-doped pinning layer  
Embodiments of a process including depositing a sacrificial layer on the surface of a substrate over a photosensitive region, over the top surface of a transfer gate, and over at least the...
8907387 Solid-state imaging device and manufacturing method thereof  
According to one embodiment, a solid-state imaging device includes a photodiode includes an N-type region and a P-type region, a floating diffusion region, and a transfer transistor. The N-type...
8883542 Solid-state imaging device, production method and drive method thereof, and camera  
A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and...
8878256 Image sensors with multiple output structures  
In various embodiments, image sensors incorporate multiple output structures by including multiple sub-arrays, at least one of which includes a region of active pixels, a dark pixel region that is...
8878263 Semiconductor device, method for manufacturing same, and solid-state image sensing device  
Disclosed herein is a semiconductor device including: a semiconductor substrate; a gate insulating film formed on surfaces of the semiconductor substrate including an internal surface of a hole...
8878255 Image sensors with multiple output structures  
In various embodiments, image sensors incorporate multiple output structures by including multiple sub-arrays, at least one of which includes a region of active pixels, a dark pixel region that is...
8872159 Graphene on semiconductor detector  
Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a...
8859391 Semiconductor device, method for manufacturing semiconductor device, method for laminating semiconductor wafers, and electronic device  
A method for manufacturing a semiconductor device including: forming a wiring layer on a surface side of a first semiconductor wafer; forming a buried film so as to fill in a level difference on...
8853670 III nitride semiconductor substrate, epitaxial substrate, and semiconductor device  
In a semiconductor device 100, it is possible to prevent C from piling up at a boundary face between an epitaxial layer 22 and a group III nitride semiconductor substrate 10 by the presence of...
8835991 Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus  
There is provided a solid-state image pickup device including a semiconductor substrate, and a plurality of pixel portions that are provided on the semiconductor substrate. Each of the pixel...
8828779 Backside illumination (BSI) CMOS image sensor process  
A backside illumination (BSI) CMOS image sensing process includes the following steps. A substrate having an active side is provided. A curving process is performed to curve the active side. A...
8816462 Negatively charged layer to reduce image memory effect  
An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed...
8815666 Power device and method for manufacturing the same  
Provided is a power device. The power device may include a two-dimensional electron gas (2-DEG) layer in a portion corresponding to a gate electrode pattern since a second nitride layer is further...
8809925 Partial buried channel transfer device in image sensors  
An image sensor pixel includes a photosensitive element, a floating diffusion (“FD”) region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an...
8803204 Manufacturing method of solid-state image pickup device and solid-state image pickup device  
In a manufacturing method of a solid-state image pickup device according to an embodiment, a transfer gate electrode is formed in a predetermined position on an upper surface of a first conductive...
8778778 Manufacturing method of semiconductor device, semiconductor substrate, and camera module  
According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the...
8778717 Local oxidation of silicon processes with reduced lateral oxidation  
A method of forming an integrated circuit structure includes providing a silicon substrate, and implanting a p-type impurity into the silicon substrate to form a p-type region. After the step of...
8772844 Solid-state imaging device  
Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In...
8754458 Semiconductor device, manufacturing method thereof, solid-state imaging device, manufacturing method thereof, and electronic unit  
A solid-state imaging device includes an element forming region on the surface of a substrate, element isolating parts that isolate pixels, each of which is formed with a trench and a buried film,...
8716719 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus  
Provided is a solid-state imaging device including: a first-conductivity-type substrate; a second-conductivity-type well formed in a surface side of the first-conductivity-type substrate; a...
8709855 Intralevel conductive light shield  
A conductive light shield is formed over a first dielectric layer of a via level in a metal interconnect structure. The conductive light shield is covers a floating drain of an image sensor pixel...
8697500 Method for manufacturing solid-state image sensor  
A method for manufacturing a solid-state image sensor includes forming a gate electrode structure including a gate electrode on a gate insulating film formed on a semiconductor substrate, and...
8691637 Solid-state image pickup device and method of manufacturing same  
Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to...
8664032 Method of producing a solid-state image sensing device including solid-state image sensor having a pillar-shaped semiconductor layer  
It is an object to provide a CCD solid-state image sensor, in which an area of a read channel is reduced and a rate of a surface area of a light receiving portion (photodiode) to an area of one...
8658477 Method for manufacturing a semiconductor device  
An exposure mask according to an embodiment of the invention includes a first transmission region where a plurality of dots through which light is shielded or transmitted are arrayed into a matrix...
8653529 Semiconductor device and method of manufacturing the same  
In a semiconductor device in which a glass substrate is attached to a surface of a semiconductor die with an adhesive layer being interposed therebetween, it is an object to fill a recess portion...
8653558 Semiconductor device and method of making  
In some embodiments, a metal insulator semiconductor heterostructure field effect transistor (MISHFET) is disclosed that has a source, a drain, an insulation layer, a gate dielectric, and a gate....
8625058 Photodetector and display device  
The amount of light incident on a photoelectric conversion element is increased while stray light from a backlight below a light-transmitting substrate is prevented from being incident on the...
8610185 Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing  
A non-uniform gate dielectric charge for pixel sensor cells, e.g., CMOS optical imagers, and methods of manufacturing are provided. The method includes forming a gate dielectric on a substrate....
8580595 Solid-state image sensing device and camera system the same  
A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a...
8569805 Solid-state image sensor and method for producing the same  
A floating diffusion (331) is created substantially at center of the light-receiving surface of an embedded photodiode (31), with a gate electrode of a transfer transistor (32) surrounding the...
8563984 Semiconductor device  
Device having reduced buffer leak on GaN substrate. In HEMT device, n-GaN (n-type GaN wafer) is used as substrate 11. Non-doped AlpGa1-pN layer with non-uniform composition p is formed on...
8558234 Low voltage low light imager and photodetector  
Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce...
8546174 Method for manufacturing semiconductor device  
In a method for manufacturing a semiconductor device according to an embodiment, an epitaxial semiconductor layer is epitaxially grown on a semiconductor substrate, a photoelectric converting...
RE44482 CMOS active image sensor with common pixel transistors and binning capability  
A lock in pinned photodiode photodetector includes a plurality of output ports which are sequentially enabled. Each time when the output port is enabled is considered to be a different bin of...
8519456 Solid-state image pickup device, image pickup apparatus including the same, and method of manufacturing the same  
A solid-state image pickup device in which electric charges accumulated in a photodiode conversion element are transferred to a second diffusion layer through a first diffusion layer.
8481355 Modular system and process for continuous deposition of a thin film layer on a substrate  
A system and associated process for vapor deposition of a thin film layer on a photovoltaic (PV) module substrate is includes establishing a vacuum chamber and introducing the substrates...
8482040 Solid-state image capturing device, method of manufacturing solid-state image capturing device, method of driving solid-state image capturing device, and electronic apparatus  
A solid-state image capturing device includes: a substrate; a substrate voltage source which applies a first potential to the substrate during a light reception period and applies a second...
8461590 Photodetector circuit, input device, and input/output device  
An adverse effect of parasitic capacitance on optical data output from a photodetector circuit is suppressed. A photodetector circuit includes a photoelectric conversion element; a first...
8435823 Solid-state imaging device and method of manufacturing the same  
According to one embodiment, a method of manufacturing a back-illuminated solid-state imaging device including forming a mask with apertures corresponding to a pixel pattern on the surface of a...
8427568 Solid-state image pickup device, method for manufacturing the same, and electronic apparatus  
Disclosed herein is a solid-state image pickup device, including a pixel, the pixel including: a light receiving section; a charge transfer path; a transfer electrode; a readout gate section; and...
8399914 Method for making solid-state imaging device  
A solid-state imaging device includes a photoelectric conversion unit that includes a first region of a first conductivity type and a second region of a second conductivity type between which a pn...
8395194 Solid-state imaging device  
A solid-state imaging device according to the present invention is of a MOS type and includes a plurality of pixels arranged in rows and columns, and includes: a semiconductor substrate; a...
8383443 Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing  
A non-uniform gate dielectric charge for pixel sensor cells, e.g., CMOS optical imagers, and methods of manufacturing are provided. The method includes forming a gate dielectric on a substrate....
8383448 Method of fabricating metal oxide semiconductor device  
A method of fabricating an MOS device is provided. First, gates and source/drain regions of transistors are formed on a substrate. A photodiode doped region and a floating node doped region are...
8383444 Method for determining color using CMOS image sensor  
A method is provided for determining a color using a CMOS image sensor. The CMOS image sensor includes an n-type substrate and a p-type epitaxy layer overlying the n-type substrate. The method...
8384173 Solid-state imaging device and method for making the same, and imaging apparatus  
A solid-state imaging device includes a light receiving unit formed in a semiconductor base and configured to perform photoelectric conversion; an insulating layer disposed on the semiconductor...

Matches 1 - 50 out of 362 1 2 3 4 5 6 7 8 >