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Document Title |
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8173476 |
Image pickup device and image pickup system
There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a...
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8163588 |
Manufacturing method of a photoelectric conversion device
A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third...
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8164121 |
Charge coupled device with potential gradient region between two control gate regions
A six-phase charge coupled device (CCD) pixel includes a pixel pair, with each pixel having two adjacent control gates overlying corresponding variable potential wells, where voltages applied to...
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8154097 |
Image sensor and method of manufacturing the same
An image sensor and a method of manufacturing the same are provided. The image sensor includes a substrate having a sensor array area and a peripheral circuit area a first insulating film structure...
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8119436 |
Image sensor having optical waveguide structure and method for manufacturing the same
An image sensor and a method for manufacturing the same are disclosed. The image sensor can include a semiconductor substrate that includes photodiodes arranged for each unit pixel; an interlayer...
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8115851 |
Solid-state image capturing apparatus, method for manufacturing same, and electronic information device
A solid-state image capturing apparatus according to the present invention includes: a plurality of photoelectric conversion sections; a charge accumulation section; and a charge readout section,...
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8115241 |
Solid state imaging apparatus and method for fabricating the same
A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric...
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8102017 |
Image sensor and method for manufacturing the same
An image sensor may comprise circuitry, a first lower electrode, a photodiode, an upper electrode, a second lower electrode, and an upper interconnection. The circuitry may comprise a first lower...
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8080856 |
Photoelectric structure and method of manufacturing thereof
A photoelectric structure is presented, comprising one or more PiN cells. The PiN cell is formed by an intrinsic semiconductor bulk having front and rear surfaces enclosed between p- and n-type...
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8043927 |
Method of manufacturing a CMOS image sensor
In a method of manufacturing a complementary metal-oxide semiconductor (CMOS) image sensor (CIS), an epitaxial layer may be formed on a first substrate including a chip area and a scribe lane area....
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8030115 |
Solid-state image pickup device with color filter and method of manufacturing the same
A solid-state image pickup device which includes a substrate carrying a plurality of photoelectric conversion elements which are two-dimensionally arranged therein the substrate having a plurality...
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8021908 |
Method and apparatus for dark current and blooming suppression in 4T CMOS imager pixel
A method and apparatus for operating an imager pixel that includes the act of applying a relatively small first polarity voltage and a plurality of pulses of a second polarity voltage on the gate...
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8017425 |
Method for fabricating an image sensor capable of increasing photosensitivity
An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor...
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8003506 |
Single poly CMOS imager
More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent...
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8003425 |
Methods for forming anti-reflection structures for CMOS image sensors
Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different...
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8003424 |
Method for fabricating CMOS image sensor with pocket photodiode for minimizng image lag
A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type....
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7998779 |
Solid-state imaging device and method of fabricating solid-state imaging device
A solid-state imaging device includes: a solid-state imaging element having a light-receiving area; a transparent member disposed so as to oppose the light-receiving area; a supporting member...
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7999291 |
Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device
A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper...
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7993952 |
Charge transfer device
A charge transfer device 1 has an P-type region, an N-type well provided to the surficial portion of the P-type region, and transfer electrodes having P-type conductivity, provided over the N-type...
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7994553 |
CMOS-based planar type silicon avalanche photo diode using silicon epitaxial layer and method of manufacturing the same
A complementary metal-oxide semiconductor (CMOS)-based planar type avalanche photo diode (APD) using a silicon epitaxial layer and a method of manufacturing the APD, the photo diode including: a...
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7993953 |
Method of manufacturing photoelectric conversion device
A method of manufacturing a photoelectric conversion device, comprises forming a first insulating film on a semiconductor substrate, forming a gate electrode by forming an electrically conductive...
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7989252 |
Method for fabricating pixel cell of CMOS image sensor
The present invention provides a method for fabricating a pixel cell of CMOS image sensor, comprising: preparing a semiconductor substrate divided into region I and region II; forming an insulation...
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7985612 |
Method and device for reducing crosstalk in back illuminated imagers
A method and resulting device for reducing crosstalk in a back-illuminated imager is disclosed, comprising providing a substrate comprising an insulator layer and a seed layer substantially...
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7981717 |
Image sensor and method of manufacturing the same
An image sensor includes a pixel array including a photodiode, a peripheral region including a logic circuit, and an isolation region formed between the pixel array and the peripheral region and...
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7977141 |
Solid-state image pickup device and method of manufacturing the same
A method of manufacturing a solid-state image pickup device according to an embodiment includes forming first and second holes in a semiconductor substrate, forming insulating films on surfaces of...
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7972885 |
Broadband imaging device and manufacturing thereof
This invention relates to imaging device and its related transferring technologies to independent substrate able to attain significant broadband capability covering the wavelengths from...
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7968365 |
Method for manufacturing solid-state imaging device
A method for manufacturing a solid-state imaging device in which a charge generator that detects an electromagnetic wave and generates signal charges is formed on a semiconductor substrate and a...
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7964451 |
Solid state imaging device and method for fabricating the same
A first oxide film (102) is formed on a semiconductor substrate (101). A first nitride film (103) is formed on first gate electrode formation regions of the first oxide film (102). A plurality of...
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7955888 |
Method of fabricating image sensor having reduced dark current
An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a...
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7935557 |
Manufacturing method of a photoelectric conversion device
A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third...
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7935988 |
Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device
A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper...
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7935551 |
Image sensor and method for manufacturing the same
A method for manufacturing a sensor image may include forming a pixel array including a photodiode structure and an insulating film structure in an active area of a semiconductor substrate; forming...
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7932127 |
Method of making CMOS image sensor-hybrid silicide
Techniques for manufacturing a CMOS image sensor are provided. A semiconductor substrate is provided, and at least one isolation region can be formed between a periphery region of the substrate and...
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7927985 |
Method of manufacturing semiconductor devices
A growth substrate is removed from a semiconductor film, and a surface of the semiconductor film exposed by removing the growth substrate is flattened. The semiconductor film along device division...
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7915067 |
Backside illuminated image sensor with reduced dark current
A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, and an oxide layer adjacent a backside surface of the sensor...
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7906824 |
Solid state imaging device and method of manufacturing the same
A solid state imaging device has a plurality of photodetector parts 11 arranged in matrix, a plurality of vertical charge transfer electrodes 13 that read out signal charge from the photodetector...
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7888161 |
Solid-state imaging device and method for producing the same
A method for producing a solid-state imaging device, which including: a photoelectric conversion section; a charge transfer section having a charge transfer electrode; and an antireflection film...
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7883923 |
Method for manufacturing image sensor
Embodiments relate to an image sensor and a method for manufacturing an image sensor. According to embodiments, a method may include forming a semiconductor substrate including a pixel part and a...
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7863062 |
Semiconductor device with a shielding section to prevent condensation and optical device module having the semiconductor device
In a solid-state imaging device 1 in which a hollow section 9 is formed between a solid-state imaging element 2 and a covering section 4 and an air path 7 extending from the hollow section 9 to the...
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7863076 |
Solid-state image pickup device, method for making same, and image pickup apparatus
Disclosed herein is a solid-state image pickup device which includes: a light-receiving unit for photoelectric conversion of incident light; and a charge transfer unit of an n-channel insulating...
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7863077 |
Image sensor and method for manufacturing the same
An image sensor and method of manufacturing the same are disclosed. A semiconductor substrate can be prepared comprising a photodiode region, a transistor region, and a floating diffusion region. A...
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7846760 |
Doped plug for CCD gaps
A method and structure of providing a doped plug to improve the performance of CCD gaps is discussed. A highly-doped region is implemented in a semiconductor, aligned beneath a gap. The plug...
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7842985 |
CMOS image sensor
Disclosed is a CMOS image sensor including a gate electrode of a finger type transfer transistor for controlling the saturation state of a floating diffusion region according to the luminance level...
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7838906 |
Semiconductor device and method of manufacturing the same
A semiconductor device 1 includes a substrate 2 having on a main surface thereof a central area and a peripheral area which surrounds the central area and is exposed, a semiconductor layer 4 which...
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7829922 |
Pixel with transfer gate with no isolation edge
A pixel and imager device, and method of forming the same, where the pixel has a transfer transistor gate associated with a photoconversion device and is isolated in a substrate by shallow trench...
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7825768 |
Resistor circuit and oscillation circuit
A resistor circuit includes first to Mth resistor circuit units. A (2j−1)th resistor circuit unit includes a (2j−1)th first fuse element and a (2j−1)th resistor provided in series between a (2j−1...
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7816170 |
Dual-pixel full color CMOS imager with large capacity well
A dual-pixel full color CMOS imager comprises a two-photodiode stack including an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer at a...
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7811850 |
Method of operating image sensor
Isolation methods and devices for isolating pixels of an image sensor pixel. The isolation structure and methods include forming a biased gate over a field isolation region and adjacent a pixel of...
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7800144 |
Solid state imaging apparatus and method for fabricating the same
A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric...
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7795065 |
Image sensor and manufacturing method thereof
Provided is an image sensor. The image sensor can include a first substrate comprising a pixel portion in which a readout circuitry is provided and a peripheral portion in which a peripheral...
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