Matches 1 - 50 out of 792 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >


Match Document Document Title
8178441 Semiconductor device and method for manufacturing the same  
A method for manufacturing a semiconductor device includes forming a gate insulating layer, a gate and a protective layer on a semiconductor substrate, forming a spacer on lateral sides of the...
8173534 Method for producing a semiconductor wafer with rear side identification  
A semiconductor wafer with rear side identification and to a method for producing the same is disclosed. In one embodiment, the rear side identification has a multiplicity of information regarding...
8165708 Customized manufacturing method for an optoelectrical device  
The disclosure provides a customized manufacturing method for an optoelectrical device. The customized manufacturing method comprises the steps of providing a manufacturing flow including a...
8158514 Method for producing vertical electrical contact connections in semiconductor wafers  
The invention relates to a method for producing vertical electrical connections in semiconductor wafers, the method including the following steps: application of a protective resist to the wafer...
8158503 Multilayer interconnection substrate and method of manufacturing the same  
A multilayer interconnection substrate is disclosed that includes a multilayer interconnection layer having at least a first interconnection layer and a second interconnection layer stacked with an...
8158504 Conductive compositions and processes for use in the manufacture of semiconductor devices—organic medium components  
Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.
8148250 Method for manufacturing semiconductor device for preventing occurrence of short circuit between bit line contact plug and storage node contact plug  
A method for manufacturing a semiconductor device includes the steps of forming a plug on a semiconductor substrate, forming an insulation layer over the semiconductor substrate having the plug...
8148188 Photoelectrochemical cell with carbon nanotube-functionalized semiconductor electrode  
Photoelectrochemical cells and methods are provided, in particular, to the functionalization of semiconductor surfaces such that its semiconducting and light generating properties are maintained...
8143153 Method for manufacturing semiconductor device  
A method of manufacturing a semiconductor device, including: forming a moisture resistant ring surrounding a multilayer interconnection structure in a layered body formed of stacked layers of a...
8133768 Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system  
The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic...
8133805 Methods for forming dense dielectric layer over porous dielectrics  
Methods for forming a dense dielectric layer over the surface of an opening in a porous inter-layer dielectric having an ultra-low dielectric constant are disclosed. The disclosure provides methods...
8129624 Pressure sensor  
A pressure sensor includes a sense element port, a support ring and a plurality of interference fit slits to provide a flexible interference fit between the sense element port and the support ring...
8124517 Method of forming an interconnect joint  
A method of forming an interconnect joint includes providing a first metal layer (210, 310), providing a film (220, 320) including metal particles (221, 321) and organic molecules (222, 322),...
8124516 Trilayer resist organic layer etch  
A method of forming dual damascene features in a porous low-k dielectric layer is provided. Vias are formed in the porous low-k dielectric layer. An organic planarization layer is formed over the...
8119512 Method for fabricating semiconductor device with damascene bit line  
A method for fabricating a semiconductor device includes forming an interlayer dielectric layer over a substrate; forming a dual storage node contact plug to be buried in the interlayer dielectric...
8119524 Method of manufacturing semiconductor device  
A first film containing a first metal material having a diffusion preventing function for copper, a second film containing oxygen-contained copper film, a third film containing copper and a second...
8114769 Methods and structures to enable self-aligned via etch for Cu damascene structure using trench first metal hard mask (TFMHM) scheme  
A method for semiconductor fabrication using a trench first metal hard mask (TFMHM) process for damascene structures includes forming a secondary metal hard mask layer above a first metal hard mask...
8114765 Methods for increased array feature density  
The embodiments generally relate to methods of making semiconductor devices, and more particularly, to methods for making semiconductor pillar structures and increasing array feature pattern...
8115276 Integrated circuit system employing back end of line via techniques  
An integrated circuit system that includes: providing a substrate including front-end-of-line circuitry; forming a first metallization layer over the substrate and electrically connected to the...
8114788 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor device. The method includes forming an energy cured resin layer on a semiconductor substrate having an electrode pad and a passivation film; fusing the...
8106518 Semiconductor device and method of manufacturing the same  
In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a plurality of elements,...
8101515 Methods of manufacturing semiconductor devices having contact plugs in insulation layers  
Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active...
8101513 Manufacture method for semiconductor device using damascene method  
(a) A recess is formed through an insulating film formed over a semiconductor substrate. (b) After the recess is formed, a temperature of the substrate is raised to 300° C. or higher at a ...
8093101 Electronic device and method of fabricating the same  
There is provided a method of fabricating an electronic device including flip-chip mounting a device chip on a substrate, and supplying solder between adjacent device chips by supplying the solder...
8093618 Multi-layer ohmic electrode, semiconductor light emitting element having multi-layer ohmic electrode, and method of forming same  
There are provided an ohmic electrode, which includes a contact layer made of an Al alloy and formed on a nitride-based semiconductor layer functioning as a light emitting layer, a reflective layer...
8084347 Resist feature and removable spacer pitch doubling patterning method for pillar structures  
A method of making a semiconductor device includes forming at least one layer over a substrate, forming at least two spaced apart features of imagable material over the at least one layer, forming...
8071482 Manufacturing method of a silicon carbide semiconductor device  
A manufacturing method for a silicon carbide semiconductor device is disclosed. It includes an etching method in which an Al film and Ni film are laid on an SiC wafer in this order and wet-etched,...
8048689 Semiconductor chip with backside conductor structure  
Various semiconductor devices and methods of testing such devices are disclosed. In one aspect, a method of manufacturing is provided that includes forming a bore from a backside of a semiconductor...
8043944 Process for enhancing solubility and reaction rates in supercritical fluids  
Processes for enhancing solubility and the reaction rates in supercritical fluids are provided. In preferred embodiments, such processes provide for the uniform and precise deposition of...
8044517 Electronic component comprising predominantly organic functional materials and a method for the production thereof  
An electronic component comprises a plurality of layers at least two of which comprise predominantly organic functional materials with improved through-plating through certain of the layers. The...
8039382 Method for forming self-aligned metal silicide contacts  
The present invention relates to a method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an...
8039383 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric regions  
A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions of the electronic device that are...
8034702 Methods of forming through substrate interconnects  
A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is...
8017511 Method of manufacturing semiconductor device  
Etching is performed on an insulating layer 23 and a conductive layer 32 with a photoresist 41 as the mask, to form an opening 51 in the conductive layer 32. After removing the photoresist 41,...
8017967 Light-emitting element including a fusion-bonding portion on contact electrodes  
A solid-state device having: a flip-chip mounted solid-state element; a power receiving/feeding portion having a mounting substrate to allow that a mounting surface of the solid-state element forms...
8012801 Flip chip mounting process and flip chip assembly  
A flip chip mounting process includes the steps of supplying a resin (13) containing solder powder and a convection additive (12) onto a wiring substrate (10) having a plurality of electrode...
8008178 Method for fabricating semiconductor device with an intermediate stack structure  
A method for fabricating a semiconductor device includes forming a first conductive layer over a substrate, forming an intermediate structure over the first conductive layer, the intermediate...
8008180 Method of forming an OHMIC contact on a P-type 4H-SIC substrate  
A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a dep...
8008179 Methods using silver compositions for micro-deposition direct writing silver conductor lines on photovoltaic wafers  
Embodiments of the invention relate to a silicon semiconductor device, and a conductive thick film composition for use in a solar cell device.
8003453 Self-aligned process for nanotube/nanowire FETs  
A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based...
8003514 Methods of fabricating semiconductor devices including storage node landing pads separated from bit line contact plugs  
A method can include forming gate lines on a semiconductor substrate and forming a first interlayer dielectric layer for insulating the gate lines from each other. First and second contact plugs...
8003509 Semiconductor manufacturing apparatus and semiconductor manufacturing method  
A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a...
7993951 Method of manufacturing photoelectric conversion device  
In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion...
7994049 Manufacturing method of semiconductor device including filling a connecting hole with metal film  
The present invention is to possible to avoid an inconvenience at a coupling portion between a barrier metal film obtained by depositing a titanium nitride film on a titanium film and thus having a...
7993992 Semiconductor device and method of fabricating the same  
There is disclosed a method of fabricating TFTs having reduced interconnect resistance by having improved contacts to source/drain regions. A silicide layer is formed in intimate contact with the...
7989335 Methods of forming insulation layer patterns and methods of manufacturing semiconductor devices including insulation layer patterns  
In a method of forming an insulation layer pattern, an insulation layer is formed on a substrate. An organic layer and a hard mask layer are successively formed on the insulation layer. A...
7988470 Methods of fabricating metal oxide or metal oxynitride TFTs using wet process for source-drain metal etch  
The present invention generally relates to thin film transistors (TFTs) and methods of making TFTs. The active channel of the TFT may comprise one or more metals selected from the group consisting...
7989334 Method of manufacturing semiconductor device  
In a method of manufacturing a semiconductor device which method is made up of a process of forming a wiring groove using a hard mask, a metal hard mask 107 is used to form a wiring groove 111,...
7985671 Structures and methods for improving solder bump connections in semiconductor devices  
Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The method includes forming an upper wiring layer in a dielectric layer and...
7977228 Methods for the formation of interconnects separated by air gaps  
The microelectronic device interconnects are fabricated by a process that utilizes a silicon-based interlayer dielectric material layer, such as carbon-doped oxide, and a chemical mixture selective...
Matches 1 - 50 out of 792 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >