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7622375 |
Conductive member and process of producing the same
Provided are a method of manufacturing an electrically conductive member having excellent properties and such electrically conductive member. A method of manufacturing an electrically conductive...
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7622336 |
Manufacturing method of semiconductor device
To provide a manufacturing method of a semiconductor device with a reduced chip area by reducing the size of a pattern for forming an integrated circuit. For example, the size of an IC chip that is...
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7622307 |
Semiconductor devices having a planarized insulating layer and methods of forming the same
A semiconductor device includes at least one phase-change pattern disposed on a semiconductor substrate. A planarized capping layer, a planarized protecting layer, and a planarized insulating layer...
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7621044 |
Method of manufacturing a resilient contact
Resilient spring contact structures are manufactured by plating the contact structures on a reusable mandrel, as opposed to forming the contact structures on sacrificial layers that are later...
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7615480 |
Methods of post-contact back end of the line through-hole via integration
Presented are methods of fabricating three-dimensional integrated circuits that include post-contact back end of line through-hole via integration for the three-dimensional integrated circuits. In...
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7611980 |
Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
Single spacer processes for multiplying pitch by a factor greater than two are provided. In one embodiment, n, where n≧2, tiers of stacked mandrels are formed over a substrate, each of the n...
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7601624 |
Device comprising an ohmic via contact, and method of fabricating thereof
Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal...
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7601623 |
Method of manufacturing a semiconductor device with a gate electrode having a laminate structure
A semiconductor device includes a semiconductor substrate having a semiconductor layer, a gate electrode, a source region, a drain region, an element separation insulating film layer and a wiring....
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7598163 |
Post-seed deposition process
A method involves pattern etching a photoresist that is located on a wafer that contains a deposited seed layer to expose portions of the seed layer, plating the wafer so that plating metal builds...
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7592245 |
Poly filled substrate contact on SOI structure
Embodiments herein present a method for forming a poly filled substrate contact on a SOI structure. The method forms an insulator on a substrate and forms a substrate contact hole within the...
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7592244 |
Semiconductor device and method of manufacturing the same
A method of manufacturing a semiconductor device includes the step of forming a first insulating section with a protruding section on a semiconductor substrate, the step of forming a first...
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7589007 |
MESFETs integrated with MOSFETs on common substrate and methods of forming the same
An integrated circuit has first and second complementary MOSFETs and first and second complementary MESFETs fabricated on a common substrate. An insulating layer is disposed on the common...
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7585771 |
Method of manufacturing semiconductor device
Method for manufacturing a semiconductor device, includes: forming a layer of dicobalt monosilicide (Co 2 Si) or of cobalt (Co) on a device-forming surface of a silicon substrate in a sputter...
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7585758 |
Interconnect layers without electromigration
A structure and a method for forming the same. The structure includes (a) an interlevel dielectric (ILD) layer; (b) a first electrically conductive line and a second electrically conductive line...
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7585757 |
Semiconductor device and method of manufacturing the same
In a semiconductor device and method of manufacturing the semiconductor device, a punch-through prevention film pattern and a channel film pattern are formed on an insulation layer. The...
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7585723 |
Method for fabricating capacitor
A method for fabricating a semiconductor device includes forming an insulation structure over a substrate structure including contact plugs, etching the insulation structure to form opening regions...
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7582551 |
Wiring substrate and wiring substrate manufacturing method
A method of manufacturing a wiring substrate comprises: a first step of forming, on a support plate, an electrode pad made of metal; a second step of etching the support plate in such a manner that...
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7579225 |
Method of forming semiconductor device having stacked transistors
There is provided a method of forming a semiconductor device having stacked transistors. When forming a contact hole for connecting the stacked transistors to each other, ohmic layers on the bottom...
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7575993 |
Method of manufacturing semiconductor device and display device
To provide a method of forming a wiring for the purpose of providing a semiconductor device, which is superior in reliability and cost performance. Further, to provide methods of manufacturing a...
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7575992 |
Method of forming micro patterns in semiconductor devices
A method of forming a micro pattern in a semiconductor device is disclosed. An oxide film mask is divided into a cell oxide film mask and a peri oxide film mask. Therefore, a connection between the...
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7575990 |
Method of forming self-aligned contacts and local interconnects
A method of forming a plurality of self-aligned contacts of a core region and local interconnect openings of a peripheral region of a semiconductor device is disclosed. A plurality of...
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7575963 |
Method for manufacturing contact structures of wiring
First, a conductive material of aluminum-based material is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode. A gate insulating layer is formed by...
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7572723 |
Micropad for bonding and a method therefor
A semiconductor process is taught for performing electroless plating of copper overlying at least a portion of a layer comprising cobalt, nickel, or both cobalt and nickel. The cobalt and/or nickel...
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7572651 |
Inkjet-fabricated integrated circuits
A method for forming an integrated circuit including at least two interconnected electronic switching devices, the method comprising forming at least part of the electronic switching devices by...
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7569470 |
Method of forming conducting nanowires
A method of preparing an array of conducting or semi-conducting nanowires may include forming a vicinal surface of stepped atomic terraces on a substrate, and depositing a fractional layer of...
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7569469 |
Dielectric nanostructure and method for its manufacture
The present invention relates to dielectric nanostructures useful in semiconductor devices and other electronic devices and methods for manufacturing the dielectric nanostructures. The...
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7569467 |
Semiconductor device and manufacturing method thereof
A semiconductor device has a multi-layer wiring in which resistance against migration of the semiconductor device is raised to improve the yield. Semiconductor device 100 includes a first...
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7566646 |
Three dimensional programmable device and method for fabricating the same
A three-dimensional memory device having polycrystalline silicon diode isolation elements for phase change memory cells and method for fabricating the same. The memory device includes a plurality...
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7563702 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device includes providing a substrate formed with a plurality of gate lines, each gate line including a hard mask, forming an etch barrier layer over the...
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7563701 |
Self-aligned contacts for transistors
Self-aligned contacts for transistors and methods for fabricating the contacts are described. An etch resistant material is patterned to create an opening that resides above a transistor gate...
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7560369 |
Method of forming metal line in semiconductor device
The present invention provides a method of forming metal lines in a semiconductor device having advantages of preventing an “explosion” phenomenon during a dual damascene process so as to...
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7557026 |
Contact structure and method of forming the same
In a method of forming a contact structure, first and second conductive structures may be formed on a lower structure to be spaced from each other. An insulating layer may be formed on the lower...
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7557025 |
Method of etching a dielectric layer to form a contact hole and a via hole and damascene method
A method of etching a dielectric layer by a conductive mask includes providing the dielectric layer on a substrate, forming a pattern conductive mask on the dielectric layer, the pattern conductive...
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7550350 |
Methods of forming flash memory device
The present disclosure relates to methods of forming a flash memory device. A plurality of cells, a plurality of select transistors, and a transistor are formed over a semiconductor substrate...
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7550323 |
Electrical fuse with a thinned fuselink middle portion
A metal layer is deposited on the patterned semiconductor material layer containing a cathode semiconductor portion, a fuselink semiconductor portion, and an anode semiconductor portion. The metal...
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7547597 |
Direct alignment scheme between multiple lithography layers
A method for directly aligning multiple lithography masking layers. The method may be used to fabricate a flash plus logic structure. The flash plus logic structure may comprise a flash memory...
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7547594 |
Metal-oxide-semiconductor transistor and method of forming the same
A method of forming a metal-oxide-semiconductor (MOS) transistor device is provided. First, a semiconductor substrate is prepared. Subsequently, a gate structure is formed on the semiconductor...
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7544610 |
Method and process for forming a self-aligned silicide contact
The present invention provides a method for forming a self-aligned Ni alloy silicide contact. The method of the present invention begins by first depositing a conductive Ni alloy with Pt and...
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7544603 |
Method of fabricating silicon nitride layer and method of fabricating semiconductor device
A method of fabricating a silicon nitride layer is described. First, a substrate is provided. Then, a silicon nitride layer is formed on the substrate. The silicon nitride layer is UV-cured in an...
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7541281 |
Method for manufacturing electronic device
A method for manufacturing an electronic device, in which a via hole and a trench for an interconnect are integrally provided in an interlayer insulating film formed on a substrate, and the via...
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7541271 |
MOS transistors having low-resistance salicide gates and a self-aligned contact between them and method of manufacture
A method for forming a self-aligned contact between two MOS transistors is described. The method supports the use of low-resistivity silicides for the formation of contacts in nanometer...
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7541270 |
Methods for forming openings in doped silicon dioxide
Methods of forming openings in doped silicon dioxide layers and of forming self aligned contact holes are provided. The openings are generally etched in a plasma processing chamber. An etchant gas...
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7534712 |
Semiconductor device and method for fabricating the same
The semiconductor device comprises a silicon substrate 10 having a device region 11 , a transistor including a gate electrode 20 formed in the device region 11 with the gate insulation film ...
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7534711 |
System and method for direct etching
System and method for direct etching. According to an embodiment, the present invention provides a method for manufacturing an integrated circuit device. The method includes a step for providing a...
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7531448 |
Manufacturing method of dual damascene structure
A manufacturing method of a dual damascene structure is provided. First, a barrier layer, a first dielectric layer, a second dielectric layer, a cap layer, a metal-containing hard mask layer, a...
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7531380 |
Methods of forming light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof
A light-emitting device comprises a substrate that has a contact plug extending therethrough between first and second opposing surfaces. An active region is on the first surface, a first electrical...
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7524752 |
Method of manufacturing semiconductor device
In a method of manufacturing a semiconductor device which method is made up of a process of forming a wiring groove using a hard mask, a metal hard mask 107 is used to form a wiring groove 111 ,...
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7524751 |
Method for forming contact hole in semiconductor device
Methods for forming a contact hole in a semiconductor device are provided. An exposed portion of an isolation layer, which may be generated during a process of forming a borderless contact hole,...
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7524750 |
Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD
A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an...
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7524749 |
Metallization method of semiconductor device
A method for forming a metallization contact in a semiconductor device includes (a) forming an insulating layer on a semiconductor substrate including an active device region or a lower metal wire;...
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