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9041088 Non-volatile memory devices having air gaps and methods of manufacturing the same  
Disclosed are non-volatile memory devices and methods of manufacturing the same. The non-volatile memory device includes device isolation patterns defining active portions in a substrate and gate...
9034707 Nonvolatile memory device and method for fabricating the same  
A nonvolatile memory device includes a floating gate formed over a semiconductor substrate, an insulator formed on a first sidewall of the floating gate, a dielectric layer formed on a second...
9029256 Charge-trap based memory  
Methods of fabricating 3D charge-trap memory cells are described, along with apparatus and systems that include them. In a planar stack formed by alternate layers of electrically conductive and...
9023707 Simultaneously forming a dielectric layer in MOS and ONO device regions  
Methods of ONO integration into MOS flow are provided. In one embodiment, the method comprises: (i) forming a pad dielectric layer above a MOS device region of a substrate; and (ii) forming a...
8980711 Memory device structure and method  
A system and method for manufacturing a memory device is provided. A preferred embodiment comprises manufacturing a flash memory device with a tunneling layer. The tunneling layer is formed by...
8980752 Method of forming a plurality of spaced features  
A method of forming a plurality of spaced features includes forming sacrificial hardmask material over underlying material. The sacrificial hardmask material has at least two layers of different...
8975684 Methods of forming non-volatile memory devices having air gaps  
Disclosed are non-volatile memory devices and methods of manufacturing the same. The non-volatile memory device includes device isolation patterns defining active portions in a substrate and gate...
8946024 Nonvolatile memory device and method for fabricating the same  
A nonvolatile memory device includes a floating gate formed over a semiconductor substrate, an insulator formed on a first sidewall of the floating gate, a dielectric layer formed on a second...
8946022 Integrated nanostructure-based non-volatile memory fabrication  
Nanostructure-based charge storage regions are included in non-volatile memory devices and integrated with the fabrication of select gates and peripheral circuitry. One or more nanostructure...
8946808 Semiconductor device and method of manufacturing the same  
A semiconductor device includes word lines and interlayer insulating layers alternately stacked over a substrate, vertical channel layers protruding from the substrate and passing through the word...
8946048 Method of fabricating non-volatile memory with flat cell structures and air gap isolation  
High-density semiconductor memory is provided with enhancements to gate-coupling and electrical isolation between discrete devices in non-volatile memory. The intermediate dielectric between...
8889510 Surrounding stacked gate multi-gate FET structure nonvolatile memory device  
A method for forming a surrounding stacked gate fin FET nonvolatile memory structure includes providing a silicon-on-insulator (SOI) substrate of a first conductivity type, patterning a fin active...
8883588 Semiconductor devices and methods of manufacturing the semiconductor devices  
A method of manufacturing a semiconductor device, the method including forming a tunnel insulating layer on an upper surface of a substrate, forming gate patterns on an upper surface of the tunnel...
8871645 Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof  
Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having...
8865546 Method for manufacturing a non-volatile semiconductor memory device having contact plug formed on silicided source/drain region  
A method for manufacturing a semiconductor device includes the steps of forming a flash memory cell provided with a floating gate, an intermediate insulating film, and a control gate, forming...
8865582 Method for producing a floating gate memory structure  
Disclosed are methods for manufacturing floating gate memory devices and the floating gate memory devices thus manufactured. In one embodiment, the method comprises providing a monocrystalline...
8853027 Split gate flash cell  
In one aspect, a disclosed method of fabricating a split gate memory device includes forming a gate dielectric layer overlying an channel region of a semiconductor substrate and forming an...
8829592 Non-volatile storage element having dual work-function electrodes  
A non-volatile storage element and a method of forming the storage element. The non-volatile storage element comprises: a first electrode including a first material having a first work function; a...
8829596 Nonvolatile memory device and method of manufacturing the same  
The nonvolatile memory device includes a semiconductor layer including trenches formed in a first direction, isolation layers filling the trenches, and active regions divided by the isolation...
8809177 Semiconductor device and method for manufacturing the same  
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a gate pattern formed by patterning a tunnel insulating layer, a conductive film for...
8803218 Nonvolatile memory device and method for fabricating the same  
A nonvolatile memory device includes a floating gate formed over a semiconductor substrate, an insulator formed on a first sidewall of the floating gate, a dielectric layer formed on a second...
8772852 Nonvolatile memory devices including common source  
Provided is a nonvolatile memory device including a common source. The device includes a first active region crossing a second active region, a common source disposed in the second active region,...
8735271 Gate tunable tunnel diode  
A gate tunable diode is provided. The gate tunable diode includes a gate dielectric formed on a gate electrode and a graphene electrode formed on the gate dielectric. Also, the gate tunable diode...
8692266 Circuit substrate structure  
A circuit substrate structure including a substrate, a dielectric stack layer, a first plating layer and a second plating layer is provided. The substrate has a pad. The dielectric stack layer is...
8658499 Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device  
A monolithic three dimensional NAND string includes a vertical semiconductor channel and a plurality of control gate electrodes in different device levels. The string also includes a blocking...
8652902 Floating gate semiconductor memory device and method for producing such a device  
Disclosed are methods for manufacturing a floating gate memory device and the floating gate memory device thus obtained. In one embodiment, a method is disclosed that includes providing a...
8637389 Resist feature and removable spacer pitch doubling patterning method for pillar structures  
A method of making a memory array is provided that includes forming a layer over a substrate, forming features over the layer, forming sidewall spacers on each of the features, filling spaces...
8629047 Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures  
Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched...
8617951 Method of manufacturing a semiconductor memory device having a floating gate  
A method of manufacturing a semiconductor memory device which includes forming a conductive layer for a floating gate above a semiconductor layer intervening a gate insulating film therebetween,...
8575017 Non-volatile semiconductor memory device and method of manufacturing the same  
A non-volatile semiconductor memory device comprises a plurality of memory cells, each including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a...
8564043 EEPROM cell structure and a method of fabricating the same  
An electrically erasable programmable read only memory (EEPROM) cell structure and a method of fabricating the same. The EEPROM cell comprising a substrate comprising two shallow trench isolation...
8536639 I-shape floating gate for flash memory device and fabricating the same  
The present invention discloses a floating gate structure of a flash memory device and a method for fabricating the same, which relates to a nonvolatile memory in a manufacturing technology of an...
8524590 Memory device and method for manufacturing memory devices  
Provided are a method for manufacturing a memory device and a memory device manufactured by the method. The memory device may be a flash memory device. The method for manufacturing the memory...
8501610 Non-volatile memories and methods of fabrication thereof  
Non-volatile memories and methods of fabrication thereof are described. In one embodiment, a method of fabricating a semiconductor device includes forming an oxide layer over a semiconductor...
8492278 Method of forming a plurality of spaced features  
A method of forming a plurality of spaced features includes forming sacrificial hardmask material over underlying material. The sacrificial hardmask material has at least two layers of different...
8476156 Manufacturing method of flash memory structure with stress area  
In a manufacturing method of a flash memory structure with a stress area, a better stress effect can be achieved by controlling the manufacturing process of a tunneling oxide layer formed in a...
8470704 Nonvolatile memory device and method of forming the nonvolatile memory device including giving an upper portion of an insulating layer an etching selectivity with respect to a lower portion  
A nonvolatile memory device and a method of forming a nonvolatile memory device are provided. The nonvolatile memory device includes an active region of a semiconductor substrate defined by a...
8466022 Semiconductor memory device and method for manufacturing the same  
According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a tunnel insulating film, a first electrode, an interelectrode insulating film and a second...
8460998 Method of fabricating semiconductor device  
A method of fabricating a semiconductor device including forming a charge storage layer, and forming a first tunnel insulating layer covering the charge storage layer, the forming of the first...
8445347 3D vertical NAND and method of making thereof by front and back side processing  
Monolithic three dimensional NAND strings and methods of making. The method includes both front side and back side processing. Using the combination of front side and back side processing, a NAND...
8440528 Method for manufacturing a vertical nonvolatile semiconductor memory device including forming floating gates within the recesses created on the interlayer insulating films  
A nonvolatile semiconductor memory device includes: forming a stacked body by alternately stacking a plurality of interlayer insulating films and a plurality of control gate electrodes; forming a...
8404576 Methods of forming a gate structure  
A gate structure includes an insulation layer on a substrate, a first conductive layer pattern on the insulation layer, a metal ohmic layer pattern on the first conductive layer pattern, a...
8390051 Methods of forming semiconductor device structures and semiconductor device structures including a uniform pattern of conductive lines  
Methods of forming semiconductor device structures are disclosed. One method comprises forming a plurality of loops of a conductive material. Each loop of the plurality of loops comprises a...
8383479 Integrated nanostructure-based non-volatile memory fabrication  
Nanostructure-based charge storage regions are included in non-volatile memory devices and integrated with the fabrication of select gates and peripheral circuitry. One or more nanostructure...
8367550 Fabricating low contact resistance conductive layer in semiconductor device  
A conductive layer may be fabricated on a semiconductor substrate by loading a silicon substrate in to a chamber whose inside temperature is at a loading temperature in the range of approximately...
8318591 Nonvolatile memory device with dielectric layer formed on control gate sidewall along lateral direction  
Patterns of a nonvolatile memory device include a semiconductor substrate that defines active regions extending in a longitudinal direction, an isolation structure formed between the active...
8318592 Gate patterns of nonvolatile memory device and method of forming the same  
A method of forming gate patterns of a nonvolatile memory device comprises forming stack patterns each having an insulating layer and a conductive layer stacked over a semiconductor substrate, and...
8293633 Method of manufacturing nonvolatile memory device  
A method of manufacturing a nonvolatile memory device comprises providing a semiconductor substrate defining active regions and isolation regions with a gate insulating layer and a floating gate...
8278171 Fabrication method for semiconductor device having laminated electronic conductor on bit line  
There are provided a semiconductor device and a fabrication method therefor including an ONO film (18) formed on a semiconductor substrate (10), a word line (24) formed on the ONO film (18), a bit...
8264026 Nonvolatile memory devices and methods of manufacturing the same  
Nonvolatile memory devices and related methods of manufacturing the same are provided. A nonvolatile memory device includes a tunneling layer on a substrate, a floating gate on the tunneling...

Matches 1 - 50 out of 352 1 2 3 4 5 6 7 8 >