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7605069 Method for fabricating semiconductor device with gate  
A method for fabricating a semiconductor device with a gate is provided. The method includes: forming a gate insulation layer over a substrate; sequentially forming a polysilicon layer, a silicide...
7605067 Method of manufacturing non-volatile memory device  
A method of manufacturing a non-volatile memory device includes forming a tunnel insulating layer on a substrate, forming a conductive pattern on the tunnel insulating layer, forming a lower...
7601592 Method for forming multi-gate non-volatile memory devices using a damascene process  
According to a nonvolatile memory device having a multi gate structure and a method for forming the same of the present invention, a gate electrode is formed using a damascene process. Therefore, a...
7598562 Semiconductor device and method of manufacturing the same  
A semiconductor device including a semiconductor substrate; an element isolation region having a trench filled with an insulating film defined on the semiconductor substrate; a memory cell...
7598140 Method of producing a semiconductor device having an oxide film  
A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the...
7598136 Image sensor and related fabrication method  
An image sensor comprising a transfer gate electrode having a uniform impurity doping distribution is provided. The image sensor further comprises a semiconductor substrate comprising a pixel area,...
7588986 Method of manufacturing a semiconductor device  
According to an exemplary embodiment of the present invention, a method of manufacturing a semiconductor device having active regions including a SONOS device region, a high voltage device region,...
7585755 Method of fabricating non-volatile memory device  
A method of fabricating a non-volatile memory device according to example embodiments may include forming a semiconductor layer on a substrate. A plurality of lower charge storing layers may be...
7585726 Nonvolatile semiconductor memory devices and the fabrication process of them  
The present invention enables to avoid a reduction in coupling ratio in a nonvolatile semiconductor memory device. The reduction is coupling ratio is caused due to difficulties in batch forming of...
7569468 Method for forming a floating gate memory with polysilicon local interconnects  
Methods and apparatus are described to facilitate forming memory devices with low resistance polysilicon local interconnects that allow a smaller array feature size and therefore facilitate forming...
7566644 Method for forming gate electrode of semiconductor device  
A method for forming a gate electrode of a semiconductor device is provided wherein a hard mask layer which is a nitride film is deposited and subjected to an additional surface deposition process...
7564094 Non-volatile memory devices and methods of manufacturing the same  
Non-volatile memory devices include a tunnel insulating layer on a channel region of a substrate, a charge-trapping layer pattern on the tunnel insulating layer and a first blocking layer pattern...
7564093 Semiconductor device  
A semiconductor device comprises static random access memory (SRAM) cells formed in a semiconductor substrate, first deep trenches isolating each boundary of an n-well and a p-well of the SRAM...
7560768 Nonvolatile memory device and method of manufacturing the same  
Provided are a nonvolatile memory device and a method of manufacturing the same. A floating gate electrode of the nonvolatile memory device may have a cross-shaped section as taken along a...
7560339 Nonvolatile memory cell comprising a reduced height vertical diode  
A nonvolatile memory cell according to the present invention comprises a bottom conductor, a semiconductor pillar, and a top conductor. The semiconductor pillar comprises a junction diode,...
7560335 Memory device transistors  
Method and device embodiments are described for fabricating MOSFET transistors in a semiconductor also containing non-volatile floating gate transistors. MOSFET transistor gate dielectric smiling,...
7557405 High-density nonvolatile memory  
An improved nonvolatile memory cell made by a method for fabricating a three dimensional monolithic memory with increased density. The memory cell includes at least a part of a first conductor, a...
7557402 High write and erase efficiency embedded flash cell  
An embedded flash cell structure comprising a structure, a first floating gate having an exposed side wall over the structure, a second floating gate having an exposed side wall over the structure...
7557042 Method for making a semiconductor device with reduced spacing  
Floating gates are formed in two separate polysilicon depositions steps resulting in distinct portions. The first formed portions are between isolation regions. A thick insulator is formed over the...
7553719 Flash memory device and method for fabricating the same  
A flash memory device includes a source region formed in an active region of a semiconductor substrate; a recessed region formed in the active region on either side of the source region, the...
7547600 Five channel fin transistor and method for fabricating the same  
A semiconductor device comprises a substrate defining a recessed active region and a fin active region connected to the recessed active region and extending above the recessed active region. The...
7544596 Atomic layer deposition of GdScO3 films as gate dielectrics  
The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of gadolinium oxide (Gd 2 O 3 ) and scandium oxide (Sc 2 O 3 ) acting as a single dielectric layer with a formula of GdScO...
7537995 Method for fabricating a dual poly gate in semiconductor device  
A method for fabricating a dual poly gate in a semiconductor device is disclosed. The method comprises forming a gate insulating layer over a semiconductor substrate including a first region and a...
7537987 Semiconductor device manufacturing method  
In a semiconductor device manufacturing method of the invention, a metal film, for forming a gate electrode, is formed on a gate insulating film. Subsequently, when the metal film is processed,...
7531404 Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer  
A method of forming a transistor gate stack having an annealed gate dielectric layer begins by providing a substrate that includes a first and second spacer separated by a trench. A conformal...
7524747 Floating gate memory device and method of manufacturing the same  
Disclosed herein is a method of forming a floating gate in a non-volatile memory device having a self-aligned shallow trench isolation (SA-STI) structure. First, a tunnel oxide layer is formed on a...
7518179 Virtual ground memory array and method therefor  
A virtual ground memory array (VGA) is formed by a storage layer over a substrate with a conductive layer over the storage layer. The conductive layer is opened according to a patterned photoresist...
7517750 Flash memory devices having multilayered inter-gate dielectric layers including metal oxide layers and methods of manufacturing the same  
Embodiments of the present invention provide methods of manufacturing memory devices including forming floating gate patterns on a semiconductor substrate having active regions thereon, wherein the...
7517749 Method for forming an array with polysilicon local interconnects  
Methods and apparatus are described to facilitate forming memory devices with low resistance polysilicon local interconnects that allow a smaller array feature size and therefore facilitate forming...
7514734 Hardmask for forming ferroelectric capacitors in a semiconductor device and methods for fabricating the same  
Hardmasks and fabrication methods are presented for producing ferroelectric capacitors in a semiconductor device, wherein a hardmask comprising aluminum oxide or strontium tantalum oxide is formed...
7514311 Method of manufacturing a SONOS memory  
A method of manufacturing a silicon-oxide-nitride-oxide-silicon (SONOS) memory is provided herein. In the method, a bottom silicon oxide layer is formed over a substrate. A patterned mask layer...
7510931 Method of fabricating a nonvolatile memory device  
A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a...
7507623 Fabricating method of semiconductor device  
A fabricating method of a semiconductor device includes: forming a first metal layer on a substrate and patterning the first metal layer to form a bottom metal line and a bottom electrode of a...
7498630 Nonvolatile semiconductor memory  
A nonvolatile semiconductor memory which is configured to include a plurality of word lines disposed in a row direction; a plurality of bit lines disposed in a column direction perpendicular to the...
7498217 Methods of manufacturing semiconductor memory devices with unit cells having charge trapping layers  
In a method of manufacturing a semiconductor device such as a SONOS type semiconductor device, a trench is formed on a substrate. An isolation layer protruding from the substrate is formed to fill...
7494869 Semiconductor integrated circuit device and manufacturing method thereof  
A manufacturing method of a semiconductor integrated circuit device is disclosed. A gate insulating film is formed on a semiconductor substrate. A first film used as floating gates is formed on the...
7494861 Method for metal gated ultra short MOSFET devices  
MOSFET devices suitable for operation at gate lengths less than about 40 nm, and methods of their fabrication is being presented. The MOSFET devices include a ground plane formed of a...
7494860 Methods of forming nonvolatile memories with L-shaped floating gates  
In a nonvolatile memory using floating gates to store charge, individual floating gates are L-shaped. Orientations of L-shaped floating gates may alternate in the bit line direction and may also...
7489003 Semiconductor device having a channel extending vertically  
In a semiconductor device, the semiconductor device includes a conductive structure, first insulating layers and first conductive layer patterns. The conductive structure includes a first portion,...
7488637 CMOS image sensor and method for forming the same  
A CMOS image sensor and a method for forming the same are provided. According to the method, a gate insulating layer and a doped polysilicon layer which are sequentially stacked on a substrate are...
7485542 Method for producing bit lines for UCP flash memories  
A semiconductor device can be fabricated by forming a floating gate layer over a semiconductor body. The floating gate layer is at least partially arranged over an insulation region in the...
7485531 Fabricating method of a non-volatile memory  
A method of fabricating a non-volatile memory is provided. A stacked structure is formed over a substrate, and the stacked structure has a gate dielectric layer and a floating gate thereon. A first...
7485526 Floating-gate structure with dielectric component  
Floating-gate memory cells having a floating gate with a conductive portion and a dielectric portion facilitate increased levels of charge trapping sites within the floating gate. The conductive...
7482224 Methods of fabricating semiconductor integrated circuit devices including SRAM cells and flash memory cells  
Semiconductor integrated circuit devices having SRAM cells and flash memory cells are provided. The devices include an integrated circuit substrate having an SRAM cell region, a flash memory cell...
7476587 Method for making a self-converged memory material element for memory cell  
A self-converged memory material element is created during the manufacture of a memory Cell comprising a base layer, with a bottom electrode, and an upper layer having a third, planarization stop...
7476583 Semiconductor device and method of manufacturing the same  
An insulating film provided below a floating gate electrode includes a first insulating film located at both end portions below the floating gate electrode, and a second insulating film sandwiched...
7473626 Control of poly-Si depletion in CMOS via gas phase doping  
A method to control the poly-Si depletion effect in CMOS structures utilizing a gas phase doping process which is capable of providing a high concentration of dopant atoms at the gate...
7465649 Method of forming a split poly-SiGe/poly-Si alloy gate stack  
A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano...
7462905 Nonvolatile semiconductor memory device, semiconductor device and method of manufacturing nonvolatile semiconductor memory device  
A nonvolatile semiconductor memory device includes a semiconductor substrate, a first floating gate formed on a main surface of the semiconductor substrate, a second floating gate formed on the...
7462533 Memory cell and method for fabricating same  
A method for fabricating a memory cell includes forming a stacked insulating layer, and a lower conductive layer on a semiconductor substrate, patterning the lower conductive layer and the...
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