Patents in Class 438/592

Matches 1 - 50 out of 1058

Match	Document	Document Title
1	7611933	Process for manufacturing a thin-film transistor (TFT) device and TFT device manufactured by the process A process for manufacturing a thin-film transistor device includes forming a dielectric insulation layer on a substrate, forming an amorphous silicon layer on the dielectric insulation layer,...
2	7605069	Method for fabricating semiconductor device with gate A method for fabricating a semiconductor device with a gate is provided. The method includes: forming a gate insulation layer over a substrate; sequentially forming a polysilicon layer, a silicide...
3	7605068	Semiconductor device having a silicide layer and manufacturing method thereof Provided is a semiconductor device and a manufacturing method thereof. The method includes the steps of: forming a thin film transistor including a substrate having a semiconductor layer and...
4	7601623	Method of manufacturing a semiconductor device with a gate electrode having a laminate structure A semiconductor device includes a semiconductor substrate having a semiconductor layer, a gate electrode, a source region, a drain region, an element separation insulating film layer and a wiring....
5	7601577	Work function control of metals Forming metal gate transistors that have different work functions is disclosed. In one example, a first metal, which is a ‘mid gap’ metal, is manipulated in first and second regions by second...
6	7595245	Semiconductor device having a gate electrode material feature located adjacent a gate width side of its gate electrode and a method of manufacture therefor The present invention provides a semiconductor device, a method of manufacture therefore and an integrated circuit including the same. The semiconductor device ( 300 ), without limitation, may...
7	7592674	Semiconductor device with silicide-containing gate electrode and method of fabricating the same There is provided a semiconductor device which is capable of solving a problem of threshold control in CMOS transistor, accompanied with combination of a gate insulating film having a high...
8	7585756	Semiconductor device and method of manufacturing the same A MOS transistor includes a substrate, source/drain regions formed at portions of the substrate, and a channel region formed between the source/drain regions. The MOS transistor further includes a...
9	7579231	Semiconductor device and method of manufacturing the same Disclosed is a method of manufacturing a semiconductor device, comprising forming a metal compound film directly or indirectly on a semiconductor substrate, forming a metal-containing insulating...
10	7572722	Method of fabricating nickel silicide A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer...
11	7572719	Semiconductor device and manufacturing method thereof A method of manufacturing a semiconductor device is provided. The method includes: sequentially forming an oxide layer and a nitride layer on a substrate having a gate insulating layer and a gate...
12	7572692	Complementary transistors having different source and drain extension spacing controlled by different spacer sizes Disclosed is a method of forming an integrated circuit structure having first-type transistors, such as P-type field effect transistors (PFETs) and complementary second-type transistors, such as...
13	7569483	Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatus Methods of forming metal silicide layers include a convection-based annealing step to convert a metal layer into a metal silicide layer. These methods may include forming a silicon layer on a...
14	7569467	Semiconductor device and manufacturing method thereof A semiconductor device has a multi-layer wiring in which resistance against migration of the semiconductor device is raised to improve the yield. Semiconductor device 100 includes a first...
15	7569466	Dual metal gate self-aligned integration A semiconductor structure including at least one n-type field effect transistor (nFET) and at least one p-type field effect transistor (pFET) that both include a metal gate having nFET behavior and...
16	7566644	Method for forming gate electrode of semiconductor device A method for forming a gate electrode of a semiconductor device is provided wherein a hard mask layer which is a nitride film is deposited and subjected to an additional surface deposition process...
17	7563700	Method for improving self-aligned silicide extendibility with spacer recess using an aggregated spacer recess etch (ASRE) integration A method is provided for making a silicided gate ( 209 ). In accordance with the method, a semiconductor structure ( 201 ) is provided which comprises a semiconductor substrate ( 202 ), a gate (...
18	7560349	Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same A semiconductor device and/or gate structure having a composite dielectric layer and methods of manufacturing the same is provided. In the semiconductor device, gate structure, and methods...
19	7557025	Method of etching a dielectric layer to form a contact hole and a via hole and damascene method A method of etching a dielectric layer by a conductive mask includes providing the dielectric layer on a substrate, forming a pattern conductive mask on the dielectric layer, the pattern conductive...
20	7550373	Method of forming a salicide layer for a semiconductor device Methods of fabricating semiconductor devices are disclosed. An illustrated example method protects spacers and active areas by performing impurity ion implantation on an oxide layer prior to...
21	7544597	Method of forming a semiconductor device including an ohmic layer In an ohmic layer and methods of forming the ohmic layer, a gate structure including the ohmic layer and a metal wiring having the ohmic layer, the ohmic layer is formed using tungsten silicide...
22	7544595	Forming a semiconductor device having a metal electrode and structure thereof A method for forming a semiconductor device includes forming a gate dielectric over a substrate, forming a metal electrode over the gate dielectric, forming a first sacrificial layer which includes...
23	7544575	Dual metal silicide scheme using a dual spacer process A semiconductor process and apparatus provide a polysilicon structure ( 10 ) and source/drain regions ( 12, 14 ) formed adjacent thereto in which a dual silicide scheme is used to form first...
24	7544553	Integration scheme for fully silicided gate To form a semiconductor device, a silicon (e.g., polysilicon) gate layer is formed over a gate dielectric and a sacrificial layer (preferably titanium nitride) is formed over the silicon gate...
25	7541650	Gate electrode structures Gate electrode structures used in field effect transistors and integrated circuits and methods of manufacture are disclosed. Improved work function and threshold modulation are provided by the...
26	7541269	Method of forming tungsten polymetal gate having low resistance A tungsten polymetal gate is made by forming a gate insulation layer and a polysilicon layer on a semiconductor substrate; depositing a barrier layer on the polysilicon layer; depositing a tungsten...
27	7538001	Transistor gate forming methods and integrated circuits A transistor gate forming method includes forming a first and a second transistor gate. Each of the two gates includes a lower metal layer and an upper metal layer. The lower metal layer of the...
28	7537998	Method for forming salicide in semiconductor device Forming salicide in a semiconductor device includes the steps of: forming a first and a second gate oxide film and in a non-salicide region and a salicide region, the first gate oxide film being...
29	7537981	Silicon on insulator device and method of manufacturing the same An isolated semiconductor device and method for producing the isolated semiconductor device in which the device includes a silicon-on-insulator (SOI) device formed on a substrate. A dielectric film...
30	7537943	Method of manufacturing a semiconductor integrated circuit device A technique of manufacturing a semiconductor integrated circuit device is provided for reducing the possibility of attachment of foreign matter to a membrane probe when performing probe inspection...
31	7534711	System and method for direct etching System and method for direct etching. According to an embodiment, the present invention provides a method for manufacturing an integrated circuit device. The method includes a step for providing a...
32	7534706	Recessed poly extension T-gate A method is provided for making a silicided gate in a semiconductor device. In accordance with the method, a gate ( 213 ) is provided which comprises a first portion ( 214 ) and a second portion (...
33	7528029	Stressor integration and method thereof A method is provided for making a semiconductor device. In accordance with the method, a substrate ( 203 ) is provided which has first ( 205 ) and second ( 207 ) gate structures thereon. A first...
34	7521346	Method of forming HfSiN metal for n-FET applications A compound metal comprising HfSiN which is a n-type metal having a workfunction of about 4.0 to about 4.5, preferably about 4.3, eV which is thermally stable on a gate stack comprising a high k...
35	7517780	Method for eliminating polycide voids through nitrogen implantation A method of manufacturing a semiconductor device includes providing a first layer over a wafer substrate, providing a polysilicon layer over the first layer, implanting nitrogen ions into the...
36	7510956	MOS device with multi-layer gate stack Methods and apparatus are provided for semiconductor devices. The apparatus comprises a substrate having therein a source region and a drain region separated by a channel region extending to a...
37	7507611	Thin film transistor and method for manufacturing the same A method for manufacturing a thin film transistor includes forming a gate oxide film on a substrate, forming a first nitride layer on the gate oxide film, forming a polysilicon layer on the first...
38	7504329	Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of...
39	7501334	Semiconductor devices having a pocket line and methods of fabricating the same In one embodiment, a semiconductor device comprises an active region isolated by a device isolation layer placed in a semiconductor substrate having a main surface. A molding hole is placed in the...
40	7501333	Work function adjustment on fully silicided (FUSI) gate A fully silicided gate with a selectable work function includes; a gate dielectric over the substrate; and a first metal silicide layer over the gate dielectric, and a second metal silicide layer...
41	7498264	Method to obtain fully silicided poly gate The present invention provides a method of fabricating a microelectronics device. In one aspect, the method comprises forming a spacer material 160 over gate electrodes 150 that are, in turn,...
42	7494877	Methods of forming semiconductor devices including Fin structures A method of forming a semiconductor device may include forming a fin structure extending from a substrate. The fin structure may include first and second source/drain regions and a channel region...
43	7494864	Method for production of semiconductor device A method for production of a semiconductor device including the steps of: forming a gate insulating film, a polysilicon film and a first insulating film on a silicon substrate; patterning the first...
44	7494859	Semiconductor device having metal gate patterns and related method of manufacture A semiconductor device comprising a semiconductor substrate having a first impurity region and a second impurity region, a first gate pattern formed on the first impurity region, and a second gate...
45	7491635	Method for forming a fully silicided gate and devices obtained thereof A method for manufacturing a MOSFET device with a fully silicided (FUSI) gate is described. This method may be used to prevent formation of shorts between the FUSI gate and a contact to a source...
46	7491634	Methods for forming roughened surfaces and applications thereof Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by...
47	7491589	Back gate FinFET SRAM A compact semiconductor structure having back gate(s) for controlling threshold voltages and associated method of formation is disclosed. Fabrication of the semiconductor structure starts with a...
48	7485579	Method of manufacturing a semiconductor device In performing an anisotropic etching process after a taper etching process of a gate conductive layer of a two-layer or three-layer laminated structure, a portion that is not etched is left at an...
49	7485558	Method of manufacturing semiconductor device In a method of manufacturing a semiconductor device, a preliminary metal silicide layer is selectively formed on a substrate having a transistor, the transistor having source/drain regions. A...
50	7473627	Semiconducting device having a structure to improve contact processing margin, and method of fabricating the same A method for fabricating a semiconductor device includes forming a first insulating pattern, a first conductive pattern, and a second conductive pattern on a semiconductor substrate; forming a...

Matches 1 - 50 out of 1058

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