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7615830 Transistors with multilayered dielectric films  
Transistors that include multilayered dielectric films on a channel region are provided. The multilayered dielectric comprises a lower dielectric film that may have a thickness that is at least 50%...
7611959 Zr-Sn-Ti-O films  
A dielectric layer containing a Zr—Sn—Ti—O film and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than...
7605067 Method of manufacturing non-volatile memory device  
A method of manufacturing a non-volatile memory device includes forming a tunnel insulating layer on a substrate, forming a conductive pattern on the tunnel insulating layer, forming a lower...
7601578 Defect control in gate dielectrics  
A method for improving high-κ gate dielectric film ( 104 ) properties. The high-κ film ( 104 ) is subjected to a two step anneal sequence. The first anneal is performed in a reducing ambient (...
7601577 Work function control of metals  
Forming metal gate transistors that have different work functions is disclosed. In one example, a first metal, which is a ‘mid gap’ metal, is manipulated in first and second regions by second...
7595203 Ferroelectric memory device with a conductive polymer layer and a method of formation  
A ferroelectric memory device and a method of formation are disclosed. In one particular embodiment, a ferroelectric memory device comprises a first electrode layer formed on a substrate, a...
7588989 Dielectric multilayer structures of microelectronic devices and methods for fabricating the same  
A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric...
7588988 Method of forming apparatus having oxide films formed using atomic layer deposition  
A dielectric layer containing an atomic layer deposited insulating metal oxide film having multiple metal components and a method of fabricating such a dielectric layer produce a reliable...
7582549 Atomic layer deposited barium strontium titanium oxide films  
Apparatus and methods of forming the apparatus include a dielectric layer containing barium strontium titanium oxide layer, an erbium-doped barium strontium titanium oxide layer, or a combination...
7575991 Removing a high-k gate dielectric  
A metal oxide layer on a substrate is converted at least partly to a metal layer. At least part of the metal layer is covered by an oxidation resistant cover. The covered layer and underlying metal...
7572735 Blanket resist to protect active side of semiconductor  
Yield loss in semiconductor processing is mitigated by forming a resist over an active side of a semiconductor workpiece or wafer, as well as around the edge of the wafer. The resist mitigates the...
7568960 Capacitive signal connector  
The present disclosure is directed to connectors and methods for passing signals through capacitive coupling and electron tunneling. The connectors according to the present disclosure can include...
7566608 Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same  
Methods of forming a zirconium hafnium oxide thin layer on a semiconductor substrate by supplying tetrakis(ethylmethylamino)zirconium ([Zr{N(C 2 H 5 )(CH 3 )} 4 ], TEMAZ) and...
7564114 Semiconductor devices and methods of manufacture thereof  
Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming an interface...
7564094 Non-volatile memory devices and methods of manufacturing the same  
Non-volatile memory devices include a tunnel insulating layer on a channel region of a substrate, a charge-trapping layer pattern on the tunnel insulating layer and a first blocking layer pattern...
7563730 Hafnium lanthanide oxynitride films  
Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide...
7560361 Method of forming gate stack for semiconductor electronic device  
A method of forming a gate stack for semiconductor electronic devices utilizing wafer bonding of at least one structure containing a high-k dielectric material is provided. The method of the...
7560349 Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same  
A semiconductor device and/or gate structure having a composite dielectric layer and methods of manufacturing the same is provided. In the semiconductor device, gate structure, and methods...
7544967 Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications  
A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate...
7544604 Tantalum lanthanide oxynitride films  
Electronic apparatus and methods of forming the electronic apparatus include a tantalum lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The tantalum lanthanide...
7544596 Atomic layer deposition of GdScO3 films as gate dielectrics  
The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of gadolinium oxide (Gd 2 O 3 ) and scandium oxide (Sc 2 O 3 ) acting as a single dielectric layer with a formula of GdScO...
7544593 Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof  
Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing...
7541242 NROM memory cell, memory array, related devices and methods  
An array of memory cells configured to store at least one bit per one F 2 includes substantially vertical structures providing an electronic memory function spaced apart a distance equal to one...
7538000 Method of forming double gate transistors having varying gate dielectric thicknesses  
Double gate transistors ( 12, 13 ) having different bottom gate dielectric thicknesses are formed on a first wafer ( 101 ) by forming a first gate dielectric layer ( 107 ); removing part of the...
7534681 Memory device fabrication  
The invention provides methods of fabricating memory devices. One embodiment forms a bulk insulation layer overlying a plurality of source/drain regions formed in a substrate, removes a cap layer...
7531411 Apparatus and method for a non-volatile memory structure comprising a multi-layer silicon-rich, silicon nitride trapping layer  
A non-volatile memory structure comprises a trapping layer that includes a plurality of silicon-rich, silicon nitride layers. Each of the plurality of silicon-rich, silicon nitride layers can trap...
7531404 Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer  
A method of forming a transistor gate stack having an annealed gate dielectric layer begins by providing a substrate that includes a first and second spacer separated by a trench. A conformal...
7528434 Production process for a semiconductor component with a praseodymium oxide dielectric  
The invention concerns a semiconductor component and an associated production process having a silicon-bearing layer, a praseodymium oxide layer and a mixed oxide layer arranged between the...
7528038 Non-volatile two-transistor semiconductor memory cell and method for producing the same  
The invention relates to a nonvolatile semiconductor memory cell and to an associated fabrication method, a source region ( 7 ), a drain region ( 8 ) and a channel region lying in between being...
7524727 Gate electrode having a capping layer  
A method of manufacturing a semiconductor device and a novel semiconductor device are disclosed herein. An exemplary method includes sputtering a capping layer in-situ on a gate dielectric layer,...
7521346 Method of forming HfSiN metal for n-FET applications  
A compound metal comprising HfSiN which is a n-type metal having a workfunction of about 4.0 to about 4.5, preferably about 4.3, eV which is thermally stable on a gate stack comprising a high k...
7521345 High-temperature stable gate structure with metallic electrode  
The present invention provides a method for depositing a dielectric stack comprising forming a dielectric layer atop a substrate, the dielectric layer comprising at least oxygen and silicon atoms;...
7521263 Method of forming an insulating film, method of manufacturing a semiconductor device, and semiconductor device  
A method of forming an insulating film includes forming a base film comprising a material whose surface is oxidized by being exposed to an oxidant. A source gas containing a metal material and a...
7514346 Tri-gate devices and methods of fabrication  
The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the...
7507653 Method of fabricating metal compound dots dielectric piece  
A method of fabricating a dielectric piece which includes metal compound dots is provided. A stacked layer formed over the substrate includes a metal compound layer and an energy barrier layer. A...
7507652 Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structure  
Some methods that are provided form a composite dielectric structure on a substrate. A first dielectric layer that includes metal and oxygen is formed on a substrate. A preliminary dielectric layer...
7507644 Method of forming dielectric layer of flash memory device  
A method of manufacturing a flash memory device, wherein according to one embodiment, when a high dielectric material is formed by a remote plasma atomic layer deposition method, first and second...
7507611 Thin film transistor and method for manufacturing the same  
A method for manufacturing a thin film transistor includes forming a gate oxide film on a substrate, forming a first nitride layer on the gate oxide film, forming a polysilicon layer on the first...
7504700 Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method  
A semiconductor structure and method of forming the same, comprising forming a uniform buffer layer of diffusion-controlling stable material on top of a base gate dielectric layer, and then forming...
7501336 Metal gate device with reduced oxidation of a high-k gate dielectric  
Embodiments of the invention provide a device with a metal gate, a high-k gate dielectric layer and reduced oxidation of a substrate beneath the high-k gate dielectric layer. An oxygen barrier, or...
7501335 Semiconductor device and manufacturing method of the same  
A manufacturing method of a semiconductor device disclosed herein, comprises: forming a silicate film containing metal on a substrate; and introducing nitrogen and deuterium into the silicate film...
7498247 Atomic layer deposition of Hf3N4/HfO2 films as gate dielectrics  
The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf 3 N 4 ) and hafnium oxide (HfO 2 ) and a method of fabricating such a combination gate and dielectric...
7498228 Method for fabricating SONOS a memory  
A method for fabricating a SONOS memory is disclosed. First, a semiconductor substrate is provided and a SONOS memory cell is formed on said semiconductor substrate. A passivation layer is...
7488656 Removal of charged defects from metal oxide-gate stacks  
The present invention provides a method for removing charged defects from a material stack including a high k gate dielectric and a metal contact such that the final gate stack, which is useful in...
7488640 Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same  
A structure (e.g., field effect transistor) and a method for making the structure, include a substrate having a source region, a drain region, and a channel region therebetween, an insulating layer...
7482623 Organic semiconductor film and organic semiconductor device  
An organic semiconductor device includes a substrate, a gate electrode formed directly on the substrate , gate insulating film formed directly on the gate electrode, a source electrode and a drain...
7482234 Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere  
After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH 3 ...
7473625 LDMOS device and method of fabrication  
An LDMOS device and method of fabrication are provided. The LDMOS device has a substrate with a source region and a drain region formed in the substrate. An insulating layer is provided on a...
7468300 Semiconductor device having high voltage MOS transistor and fabrication method thereof  
A semiconductor device having a high voltage MOS transistor. The device includes a gate oxide layer disposed between a gate electrode and a substrate on an active area and having relatively thick...
7462533 Memory cell and method for fabricating same  
A method for fabricating a memory cell includes forming a stacked insulating layer, and a lower conductive layer on a semiconductor substrate, patterning the lower conductive layer and the...
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