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8178381 |
Back side illumination image sensor and method for manufacturing the same
Disclosed are a back side illumination image sensor and a method for manufacturing the same. The back side illumination image sensor includes an isolation region and a pixel area on a front side of...
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8158453 |
Methods of forming silicide strapping in imager transfer gate device
A CMOS active pixel sensor (APS) cell structure having dual workfunction transfer gate device and method of fabrication. The transfer gate device comprises a dielectric layer formed on a substrate...
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8154098 |
Reverse image sensor module and method for manufacturing the same
A reverse image sensor module includes first and second semiconductor chips, and first and second insulation layers. The first semiconductor chip includes a first semiconductor chip body having a...
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8149307 |
Methods of fabricating integrated imager and microcontroller
A method and apparatus providing a CMOS imager with an integrated controller on a common integrated circuit substrate. Also integrated on the common substrate are, a serializer circuit including a...
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8138004 |
Photoelectric conversion device, manufacturing method thereof and semiconductor device
A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric...
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8124438 |
Method of fabricating CMOS image sensor
A CMOS image sensor and a method of fabricating the same. The CMOS image sensor may minimize disappearance of electrons generated by light without transmission of electrons to a transfer gate. A...
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8105861 |
CMOS image sensor with reduced dark current
A carbon-containing semiconductor layer is formed on exposed surfaces of a p− doped semiconductor layer abutting sidewalls of a shallow trench. Following formation of a dielectric layer on the c...
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8084290 |
Method for fabricating CMOS image sensor
A method of forming a CMOS image sensor and a CMOS image sensor. A method of forming a CMOS image sensor may include forming a plurality of photodiodes on and/or over a semiconductor substrate at...
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8072015 |
Solid-state imaging device and manufacturing method thereof
A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The...
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8071415 |
Method of fabricating semiconductor device
There is provided a method of fabricating a semiconductor device having plural light receiving elements, and having an amplifying element, the method including: a) forming an active region on the...
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8067740 |
Image sensor and manufacturing method thereof
An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by...
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8067261 |
Solid-state imaging device and manufacturing method thereof
A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The...
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8062919 |
Monolithic silicon-based photonic receiver
An integrated circuit, and method for manufacturing the integrated circuit, where the integrated circuit can include a phototransistor comprising a base having a SiGe base layer of a predetermined...
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8048791 |
Method of forming a semiconductor device
Methods for forming a semiconductor device comprising a semiconductor substrate are provided. In accordance with an exemplary embodiment, a method comprises forming a channel layer overlying the...
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8039287 |
Method of forming high gain, low noise, photodiode sensor for image sensors
Embodiments of the present invention provide a pixel cell for an image sensor that includes a photodiode, which provides high gain, low noise, and low dark current. The pixel cell includes a...
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8030114 |
Method and structure to reduce dark current in image sensors
A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at...
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8008108 |
Solid-state imaging device, method of producing the same, and camera
To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a...
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7998778 |
Method of producing a solid-state imaging device
To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a...
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7993951 |
Method of manufacturing photoelectric conversion device
In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion...
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7985613 |
Method for manufacturing back side illumination image sensor
A method of manufacturing a back side illumination image sensor is provided. The method can include forming an ion implantation layer in a front side of a first substrate, forming a photodetector...
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7981717 |
Image sensor and method of manufacturing the same
An image sensor includes a pixel array including a photodiode, a peripheral region including a logic circuit, and an isolation region formed between the pixel array and the peripheral region and...
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7977140 |
Methods for producing solid-state imaging device and electronic device
A method for producing a solid-state imaging device includes steps of: forming transfer electrodes on a substrate having a plurality of light-sensing portions through a gate insulating layer so...
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7964929 |
Method and apparatus providing imager pixels with shared pixel components
The disclosed embodiments employ shared pixel component architectures that arrange the shared pixel components for a group of pixels within different pixels of the group.
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7955870 |
Dry etch stop process for eliminating electrical shorting in MRAM device structures
The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using...
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7943534 |
Semiconductor device manufacturing method and semiconductor device manufacturing system
A semiconductor device manufacturing method and a semiconductor device manufacturing system for irradiating a first laser light (50) and a second laser light (52) with a wavelength different from...
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7939867 |
Complementary metal-oxide-semiconductor (CMOS) image sensor and fabricating method thereof
A method of fabricating a complementary metal-oxide-semiconductor (CMOS) image sensor is provided. First, an isolation structure is formed in a substrate with a photo-sensitive region and a...
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7939357 |
Image sensor pixel having photodiode with multi-dopant implantation
An active pixel using a photodiode with multiple species of P type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is a P− region formed w...
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7932120 |
Methods of manufacturing CMOS image sensors
Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first,...
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7927908 |
Method for manufacturing a bolometric detector
The method is designed for manufacturing a bolometric detector equipped with a membrane suspended above a substrate by means of heat-insulating arms fixed to the substrate by anchoring points. The...
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RE42292 |
Pinned photodiode photodetector with common pixel transistors and binning capability
A lock in pinned photodiode photodetector includes a plurality of output ports which are sequentially enabled. Each time when the output port is enabled is considered to be a different bin of time....
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7911014 |
On chip antenna and method of manufacturing the same
An antenna with air-filled trench is integrated with a radio frequency (RF) circuit. The trench locates directly under the metal lines that made up the antenna and is formed by etching from the...
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7902618 |
Backside illuminated imaging sensor with improved angular response
A backside illuminated imaging pixel with improved angular response includes a semiconductor layer having a front and a back surface. The imaging pixel also includes a photodiode region formed in...
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7888161 |
Solid-state imaging device and method for producing the same
A method for producing a solid-state imaging device, which including: a photoelectric conversion section; a charge transfer section having a charge transfer electrode; and an antireflection film...
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7888215 |
CMOS image sensor with high full-well-capacity
An image sensor with a high full-well capacity includes a photosensitive region, a transfer gate, and sidewall spacers. The photosensitive region is formed to accumulate an image charge in response...
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7883922 |
Image sensor and method for manufacturing the same
An image sensor and a method for manufacturing an image sensor that has an increased aspect ratio. An image sensor and a method for manufacturing an image sensor that have a relatively large...
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7883923 |
Method for manufacturing image sensor
Embodiments relate to an image sensor and a method for manufacturing an image sensor. According to embodiments, a method may include forming a semiconductor substrate including a pixel part and a...
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7875915 |
Integrated circuit comprising a photodiode of the floating substrate type and corresponding fabrication process
An integrated circuit includes at least one photodiode associated with a read transistor. The photodiode is formed from a stack of three semiconductor layers comprising a buried layer, an floating...
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7875491 |
CMOS image sensors and methods of manufacturing the same
A complementary metal-oxide-semiconductor image sensor may include: a semiconductor substrate; a photodiode formed on a first portion of the semiconductor substrate; a transfer gate formed on the...
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7875945 |
Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same
A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based...
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7863077 |
Image sensor and method for manufacturing the same
An image sensor and method of manufacturing the same are disclosed. A semiconductor substrate can be prepared comprising a photodiode region, a transistor region, and a floating diffusion region. A...
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7863074 |
Patterning electrode materials free from berm structures for thin film photovoltaic cells
A method for forming a thin film photovoltaic device having patterned electrode films includes providing a soda lime glass substrate with an overlying lower electrode layer comprising a molybdenum...
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7858974 |
Organic light-emitting display panel and method of manufacturing the same
An organic light-emitting display panel having a storage capacitor comprised of a storage electrode overlapping a power line with a first gate-insulating layer disposed therebetween, wherein the...
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7859072 |
Image sensor and method for manufacturing the same
An image sensor and a fabricating method thereof are provided. The image sensor includes a plurality of pixels disposed in an active region and dummy pixels disposed in a peripheral region. An...
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7838324 |
Neutron detection structure and method of fabricating
A method of fabricating a neutron detection structure includes temporarily bonding a carrier to a passivated SOI SRAM wafer, removing a first substrate, depositing a conversion layer where at least...
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7833818 |
Integrated structure of MEMS device and CMOS image sensor device and fabricating method thereof
An integrated structure of MEMS device and CIS device and a fabricating method thereof includes providing a substrate having a CIS region and a MEMS region defined therein with a plurality of CIS...
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7824949 |
Structure and method for flexible sensor array
A method of forming a sensor array. The method includes depositing a source/drain contact layer; depositing a semiconductor layer on the source/drain contact layer; and patterning the source/drain...
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7816170 |
Dual-pixel full color CMOS imager with large capacity well
A dual-pixel full color CMOS imager comprises a two-photodiode stack including an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer at a...
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7795065 |
Image sensor and manufacturing method thereof
Provided is an image sensor. The image sensor can include a first substrate comprising a pixel portion in which a readout circuitry is provided and a peripheral portion in which a peripheral...
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7790487 |
Method for fabricating photo sensor
A method for fabricating a photo sensor on an amorphous silicon thin film transistor panel includes forming a photo sensor with a bottom electrode, a silicon-rich dielectric layer, and a top...
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7781231 |
Method of forming a magnetic tunnel junction device
A method of manufacturing a magnetic tunnel junction device is disclosed that includes forming a trench in a substrate, depositing a conductive terminal within the trench, and depositing a magnetic...
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