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7642159 |
Semiconductor device and method for manufacturing the same
A semiconductor device may include a semiconductor substrate having a recessed surface, a gate insulating layer formed on the recessed surface of the semiconductor substrate, a gate electrode...
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7642164 |
Method of forming self aligned contacts for a power MOSFET
A method for providing self aligned contacts for a trench power MOSFET is disclosed. The method includes, etching trenches in a substrate through a mask of silicon nitride deposited on an oxide...
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7629242 |
Method for fabricating semiconductor device having recess gate
A method for fabricating a semiconductor device having a recess gate includes forming a hard mask pattern on a substrate, etching the substrate using the hard mask pattern as an etch barrier to...
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7629646 |
Trench MOSFET with terraced gate and manufacturing method thereof
A trench metal oxide semiconductor field effect transistor (MOSFET) with a terraced trench gate. An epitaxial layer with a plurality of trenches is provided and a gate oxide layer is covered the...
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7625813 |
Method of fabricating recess channel in semiconductor device
A method of fabricating a recess channel in a semiconductor device includes forming a hard mask pattern over a substrate, etching the substrate using the hard mask pattern to form first recesses,...
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7625793 |
Power MOS device with improved gate charge performance
A double-diffused metal-oxide-semiconductor (“DMOS”) field-effect transistor with an improved gate structure. The gate structure includes a first portion of a first conductivity type for...
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7622369 |
Device isolation technology on semiconductor substrate
A method of forming device isolation regions on a trench-formed silicon substrate and removing residual carbon therefrom includes providing a flowable, insulative material constituted by silicon,...
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7622350 |
Method of manufacturing semiconductor device having cell transistor with recess channel structure
A method of manufacturing a semiconductor device is provided. Device separation portions defining first, second and third regions are formed in a substrate. A recess is formed at the first region....
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7618885 |
Semiconductor device having a recess channel and method for fabricating the same
Provided is a semiconductor device having recess channel, comprising a semiconductor substrate having first and second trenches disposed to cross each other on both sides of an active region among...
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7615451 |
Method for forming semiconductor device
A method for forming a semiconductor device is provided. More specifically, a method for forming a bulb-shaped portion of a bulb-shaped recess gate is provided to overcome an etching process margin...
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7608515 |
Diffusion layer for stressed semiconductor devices
A diffusion layer for semiconductor devices is provided. In accordance with embodiments of the present invention, a semiconductor device, such as a transistor, comprises doped regions surrounded by...
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7605424 |
Semiconductor device and method of manufacturing semiconductor device
A semiconductor device including: a semiconductor region having a first semiconductor face and a second semiconductor face connected to the first semiconductor face and having an inclination with...
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7598134 |
Memory device forming methods
A memory device includes an array of memory cells and peripheral devices. At least some of the individual memory cells include carbonated portions that contain SiC. At least some of the peripheral...
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7589369 |
Semiconductor constructions
The invention includes a method in which a semiconductor substrate is provided to have a memory array region, and a peripheral region outward of the memory array region. Paired transistors are...
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7588985 |
Method for fabricating fin transistor
A method for fabricating a fin transistor includes patterning a first pad layer provided over a substrate using an isolation mask, etching the substrate using the isolation mask and the first pad...
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7579265 |
Method for manufacturing recess gate in a semiconductor device
A method for manufacturing a recess gate in a semiconductor device includes forming a device isolation structure on a substrate to define an active region, forming a hard mask pattern over the...
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7575989 |
Method of manufacturing a transistor of a semiconductor device
A method of manufacturing a transistor in which gate resistance is lowered and short channel effects are controlled by forming a trench-type gate. The threshold voltage can also be more tightly...
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7572703 |
Method for manufacturing a vertical-gate MOS transistor with countersunk trench-gate
A method manufactures a vertical-gate MOS transistor integrated in a semiconductor chip having a main surface. The method includes: forming a trench gate extending into the chip from the main...
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7572704 |
Method for forming metal pattern and method for forming gate electrode in semiconductor device using the same
A method for forming a metal pattern in a semiconductor device includes forming an etch stop layer over a semi-finished substrate including a metal layer, forming a hard mask over the etch stop...
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7569480 |
Semiconductor devices and methods of fabricating the same
In a method of fabricating a semiconductor device, a first mask pattern is formed on a substrate. The first mask pattern has a first opening formed to expose the substrate. An oxidation barrier...
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7566645 |
Semiconductor device and method for fabricating the same
A method for fabricating a semiconductor device is provided. In the method, a bulb type recess is formed on a semiconductor substrate in an active region. A gate insulating film is formed over the...
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7566621 |
Method for forming semiconductor device having fin structure
A method for forming a semiconductor device having a fin structure includes (a) forming a device isolation film over a silicon substrate to define an active area, (b) etching silicon substrate of...
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7563699 |
Semiconductor devices having line type active regions and methods of fabricating the same
In a semiconductor device having line type active regions and a method of fabricating the semiconductor device, the semiconductor device includes a device isolation layer which defines the line...
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7544571 |
Trench gate FET with self-aligned features
A field effect transistor is formed as follows. Trenches are formed in a semiconductor region of a first conductivity type. A gate electrode recessed in each trench is formed. Using a first mask, a...
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7537994 |
Methods of forming semiconductor devices, assemblies and constructions
Embodiments disclosed herein include methods in which a pair of openings are formed into semiconductor material, with the openings being spaced from one another by a segment of the semiconductor...
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7534681 |
Memory device fabrication
The invention provides methods of fabricating memory devices. One embodiment forms a bulk insulation layer overlying a plurality of source/drain regions formed in a substrate, removes a cap layer...
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7534708 |
Recessed-type field effect transistor with reduced body effect
For fabricating a field effect transistor, an extra-doped channel region is formed below a surface of a semiconductor substrate. An opening is formed in the semiconductor substrate into the...
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7533361 |
System and process for manufacturing custom electronics by combining traditional electronics with printable electronics
A system and process for manufacturing custom printed circuit boards on pre-provided substrates, wherein the substrate is pre-provided with standard integrated circuits. The standard integrated...
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7531413 |
Method of forming transistor having channel region at sidewall of channel portion hole
According to some embodiments of the invention, a method of forming a transistor includes forming a device isolation layer in a semiconductor substrate. The device isolation layer is formed to...
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7531438 |
Method of fabricating a recess channel transistor
A method of fabricating a recess channel transistor is provided. First, a hard mask is formed on a doped-semiconductor layer and a substrate. The doped-semiconductor layer and the substrate are...
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7524726 |
Method for fabricating a semiconductor device
A process for fabricating a power semiconductor device is disclosed.
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7524725 |
Vertical transistor of semiconductor device and method for forming the same
A vertical transistor of a semiconductor device and a method for forming the same are disclosed. The vertical transistor comprises a silicon fin disposed on a semiconductor substrate, a source...
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7518184 |
DRAM access transistor
Self-aligned recessed gate structures and method of formation are disclosed. Field oxide areas for isolation are first formed in a semiconductor substrate. A plurality of columns are defined in an...
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7517746 |
Metal oxide semiconductor transistor with Y shape metal gate and fabricating method thereof
A method of manufacturing a metal oxide semiconductor transistor having a metal gate is provided. The method firstly includes a step of providing a substrate. A dummy gate is formed on the...
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7517779 |
Recessed drain extensions in transistor device
A method of forming an integrated circuit transistor ( 50 ). The method provides a first semiconductor region ( 52 ) and forms ( 110 ) a gate structure ( 54 x ) in a fixed position relative to the...
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7518169 |
MOS-transistor on SOI substrate with source via
In an inventive MOS transistor having a source region, a drain region and a channel region, which are formed in a semiconductor layer of an SOI substrate, which has a semiconductor substrate below...
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7510955 |
Method of fabricating multi-fin field effect transistor
A multi-fin field effect transistor includes a substrate, an oxide layer, a conductive layer, a gate oxide layer, and a doped region is provided. The substrate is surrounded by a trench, and there...
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7510946 |
Method for filling of nanoscale holes and trenches and for planarizing of a wafer surface
A processing method for use in the fabrication of fabrication of nanoscale electronic, optical, magnetic, biological, and fluidic devices and structures, for filling nanoscale holes and trenches,...
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7507630 |
Method of fabricating a semiconductor device
A method of fabricating a semiconductor device includes: forming an insulating film on a semiconductor body to cover a termination area surrounding a cell area; forming a mask material film to...
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7507628 |
Method of manufacturing a non-volatile memory device
A method of manufacturing a non-volatile memory device includes forming a trench using the shallow trench isolation (STI) method; forming a first insulating layer on a semiconductor device...
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7504306 |
Method of forming trench gate field effect transistor with recessed mesas
A monolithically integrated field effect transistor and Schottky diode includes gate trenches extending into a semiconductor region. Source regions having a substantially triangular shape flank...
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7501334 |
Semiconductor devices having a pocket line and methods of fabricating the same
In one embodiment, a semiconductor device comprises an active region isolated by a device isolation layer placed in a semiconductor substrate having a main surface. A molding hole is placed in the...
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7494872 |
Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor
By forming an implantation mask prior to the definition of the drain and the source areas, an effective decoupling of the gate dopant concentration from that of the drain and source concentrations...
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7491633 |
High switching speed two mask schottky diode with high field breakdown
A power Schottky rectifier device and method of making the same are disclosed. The Schottky rectifier device includes a LOCOS structure grown on the bottom of the trenches by using nitride spacer...
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7488647 |
System and method for providing a poly cap and a no field oxide area to prevent formation of a vertical bird's beak structure in the manufacture of a semiconductor device
A system and method is disclosed that prevents the formation of a vertical bird's beak structure in the manufacture of a semiconductor device. A polysilicon filled trench is formed in a substrate...
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7485557 |
Method for fabricating semiconductor device having flask type recess gate
A method for fabricating a semiconductor device having a flask type recess gate includes forming a hard mask pattern on a substrate, etching the substrate to a predetermined depth using the hard...
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7482227 |
Method for manufacturing a flash memory
A method for manufacturing a flash memory includes providing a substrate with a sacrificial oxide layer, a sacrificial poly-Si layer, a hard mask layer and a trench exposing part of the substrate...
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7482645 |
Method and structure for making a top-side contact to a substrate
A method for forming a semiconductor structure includes the following steps. A starting semiconductor substrate having a top-side surface and a back-side surface is provided. A recess is formed in...
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7479445 |
Methods of forming field effect transistors having t-shaped gate electrodes using carbon-based etching masks
Methods of forming field effect transistors include forming a first electrically insulating layer comprising mostly carbon on a surface of a semiconductor substrate and patterning the first...
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7476589 |
Methods for forming shielded gate field effect transistors
A field effect transistor is formed as follows. A trench is formed in a semiconductor region. A dielectric layer lining the trench sidewalls and bottom is formed. The trench is filled with a...
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