Patents in Class 438/589

Matches 1 - 50 out of 584

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Match	Document	Document Title
1	8178406	Split gate device and method for forming A method of making a semiconductor device on a semiconductor layer includes forming a select gate, a recess, a charge storage layer, and a control gate. The select gate is formed have a first...
2	8178947	Semiconductor device There is provided a semiconductor device in which an amount of fluctuations in output capacitance and feedback capacitance is reduced. In a trench-type insulated gate semiconductor device, a width...
3	8178957	Electronic component device, and method of manufacturing the same A method of manufacturing an electronic component device, includes the steps of preparing a wiring substrate, which includes a silicon substrate, a concave portion provided on its upper surface...
4	8174064	Semiconductor device and method for forming the same A semiconductor device includes a conductive pattern formed on the substrate; an interlayer dielectric layer formed on the conductive pattern; a contact plug connected to the conductive pattern...
5	8168494	Trench MOS transistor and method of manufacturing the same Trench portions (10) are formed in a well (5) in order to provide unevenness in the well (5). A gate electrode (2) is formed via an insulating film (7) on the upper surface and inside of the trench...
6	8168498	Insulated gate type semiconductor device and method for fabricating the same In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer...
7	8168521	Methods of manufacturing semiconductor devices having low resistance buried gate structures In a method of manufacturing a semiconductor device, a recess is formed in an active region of a substrate. A gate insulation layer is formed in the first recess. A barrier layer is formed on the...
8	8168507	Structure and method of forming enhanced array device isolation for implanted plate EDRAM A method for forming a memory device in a semiconductor on insulator substrate is provided, in which a protective oxide that is present on the sidewalls of the trench protects the first...
9	8153492	Self-aligned V-channel MOSFET Forming a high-κ/metal gate field effect transistor using a gate last process in which the channel region has a curved profile thus increasing the effective channel length improves the short ...
10	8153490	Fabrication method of power semiconductor structure with reduced gate impedance A fabrication method of a power semiconductor structure with reduced gate impedance is provided. Firstly, a polysilicon gate is formed in a substrate. Then, dopants are implanted into the substrate...
11	8148775	Methods of providing electrical isolation and semiconductor structures including same Methods of isolating gates in a semiconductor structure. In one embodiment, isolation is achieved using a spacer material in combination with fins having substantially vertical sidewalls. In...
12	8148248	Semiconductor device and manufacturing method thereof There is provided a semiconductor device having a metal silicide layer which can suppress the malfunction and the increase in power consumption of the device. The semiconductor device has a...
13	8148224	Insulated gate type semiconductor device and method for fabricating the same In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer...
14	8143126	Method for forming a vertical MOS transistor A method is used to form a vertical MOS transistor. The method utilizes a semiconductor layer. An opening is etched in the semiconductor layer. A gate dielectric is formed in the opening that has a...
15	8143125	Structure and method for forming a salicide on the gate electrode of a trench-gate FET A method for forming a trench-gate FET includes the following steps. A plurality of trenches is formed extending into a semiconductor region. A gate dielectric is formed extending along opposing...
16	8138088	Manufacturing method of structure by imprint A manufacturing method of a structure by an imprint process includes a first imprint step of forming a first resin material layer by applying a first resin material onto a substrate and then...
17	8138581	Semiconductor device with channel stop trench and method A semiconductor device is provided which includes a semiconductor substrate having a first surface, an active area and a peripheral area. The semiconductor device further includes least one channel...
18	8120101	Semiconductor constructions and transistors, and methods of forming semiconductor constructions and transistors The invention includes a transistor device having a semiconductor substrate with an upper surface. A pair of source/drain regions are formed within the semiconductor substrate and a channel region...
19	8120099	Semiconductor device with buried gate and method for fabricating the same A semiconductor device and method for fabricating the same is provided. The semiconductor device includes a trench formed in a substrate, a junction region formed in the substrate on both sides of...
20	8114762	Method for manufacturing trench MOSFET device with low gate charge A method for manufacturing trench MOSFET device with low gate charge includes the steps of providing a substrate of first conductivity type; forming an epitaxial layer of first conductivity type on...
21	8110901	Vertical field effect transistor arrays including gate electrodes annularly surrounding semiconductor pillars Vertical field effect transistor semiconductor structures and methods for fabrication of the vertical field effect transistor semiconductor structures provide an array of semiconductor pillars....
22	8101512	Method of enhancing lithography capabilities during gate formation in semiconductors having a pronounced surface topography In a mesa isolation configuration for forming a transistor on a semiconductor island, an additional planarization step is performed to enhance the uniformity of the gate patterning process. In some...
23	8097509	Method for manufacturing semiconductor device with a recessed channel A semiconductor device having a recessed channel and a method for manufacturing the same. The semiconductor device comprises a semiconductor substrate formed with an isolation layer defining an...
24	8088660	Method for producing a plug in a semiconductor body A method for producing an electrode in a semiconductor layer includes providing a substrate with a first surface and a second surface, forming a first trench having sidewalls and extending into the...
25	8084343	Semiconductor device In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor...
26	8084327	Method for forming trench gate field effect transistor with recessed mesas using spacers A method for forming a field effect transistor with an active area and a termination region surrounding the active area includes forming a well region in a first silicon region, where the well...
27	8080459	Self aligned contact in a semiconductor device and method of fabricating the same A method of fabricating a self-aligned contact in a semiconductor device, in accordance with one embodiment of the present invention, includes etching a trench in a core area and partially...
28	8080457	Fabrication method of power semiconductor structure with low gate charge A fabrication method of a trenched power semiconductor structure with low gate charge is provided. Firstly, a substrate is provided. Then, a gate trench is formed in the substrate. Afterward, a...
29	8076203	Semiconductor device and method of manufacturing the same A polysilicon film is formed all over a surface of a semiconductor substrate, then is subject to a CMP process through a mask pattern as a stopper. Then, a metal film is formed all over the...
30	8071481	Method for forming highly strained source/drain trenches A multi-step etching process produces trench openings in a silicon substrate that are immediately adjacent transistor structures formed over the substrate surface. The multi-step etching process is...
31	8072024	Nonvolatile semiconductor memory device and method for manufacturing same A nonvolatile semiconductor memory device with a substrate. A plurality of dielectric films and electrode films are alternately stacked on the substrate and have a through hole penetrating in the...
32	8062954	Method for manufacturing a field plate in a trench of a power transistor A method for manufacturing a field plate in a trench of a power transistor in a substrate of a first conductivity type is disclosed. The trench is formed in a first main surface of the substrate.
33	8058160	Method of forming nonvolatile memory device A method of forming the gate patterns of a nonvolatile memory device comprises stacking a gate insulating layer and a first conductive layer over a semiconductor substrate; forming isolation hard...
34	8058161	Recessed STI for wide transistors A method of manufacturing a semiconductor device having shallow trench isolation includes steps of forming a hard mask layer on the substrate surface, etching a trench through the hard mask,...
35	8058133	Method of fabrication of metal oxide semiconductor field effect transistor A method of fabrication of a metal oxide semiconductor field effect transistor includes first providing a substrate on which a gate structure is formed. Afterwards, a portion of the substrate is...
36	8058127	Manufacturing method of semiconductor power devices Disclosed is a power semiconductor device, in particular, a trench type power semiconductor device for use in power electronic devices. A method of manufacturing the same is provided. The method of...
37	8058128	Methods of fabricating recessed channel metal oxide semiconductor (MOS) transistors A method of fabricating a semiconductor device includes forming a mask pattern on an active region of a substrate defined by an isolation region. The mask pattern includes an opening therein...
38	8053834	Inverted-trench grounded-source FET structure using conductive substrates, with highly doped substrates This invention discloses an inverted field-effect-transistor (iT-FET) semiconductor device that includes a source disposed on a bottom and a drain disposed on a top of a semiconductor substrate....
39	8049274	Semiconductor integrated circuit and method of manufacturing the same A semiconductor integrated circuit includes a semiconductor substrate, a plurality of trenches formed to extend in one direction in the semiconductor substrate, at least one connecting trench...
40	8048795	Self-assembly pattern for semiconductor integrated circuit A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A...
41	8043949	Method of manufacturing silicon carbide semiconductor device There is provided a method of manufacturing a silicon carbide semiconductor device including the steps of: in a semiconductor stacked substrate including a first conductivity type silicon carbide...
42	8039357	Integrated circuitry and methods of forming a semiconductor-on-insulator substrate Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding...
43	8039347	Semiconductor device having vertically aligned pillar structures that have flat side surfaces and method for manufacturing the same A semiconductor device having vertically aligned transistors made from pillar structures that have flat side surfaces is presented. The semiconductor device includes a semiconductor substrate,...
44	8034701	Methods of forming recessed gate electrodes having covered layer interfaces Methods of forming a gate electrode can be provided by forming a trench in a substrate, conformally forming a polysilicon layer to provide a polysilicon conformal layer in the trench defining a...
45	8030197	Recessed channel array transistor (RCAT) in replacement metal gate (RMG) logic flow Embodiments of the invention relate to a method of fabricating logic transistors using replacement metal gate (RMG) logic flow with modified process to form recessed channel array transistors...
46	8017468	Semiconductor device manufacturing method, and semiconductor device A method of manufacturing a semiconductor device in which the formation of buried wiring is facilitated includes: forming columnar patterns, which are arranged in a two-dimensional array, and...
47	8017493	Method of planarizing a semiconductor device A process of forming a semiconductor process fabricated device which contains a trench, hole or gap filled with a conformally deposited material is disclosed. A sacrificial planarizing layer is...
48	8013388	Semiconductor device and method of manufacturing the same Disclosed herein is a method of manufacturing a semiconductor device that is adapted to improve the production yield. The method generally includes etching a semiconductor substrate to form a...
49	8003525	Semiconductor device and method of manufacturing the same A GaN layer and an n-type AlGaN layer are formed over an insulating substrate, and thereafter, a gate electrode, a source electrode and a drain electrode are formed on them. Next, an opening...
50	7994062	Selective silicon etch process A process for etching a silicon layer disposed on a substrate, including anisotropically etching a first trench in the silicon layer; selectively anisotropic wet etching silicon surfaces in the...

Matches 1 - 50 out of 584

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