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9040403 Methods for fabricating integrated circuits having gate to active and gate to gate interconnects  
Methods are provided for fabricating an integrated circuit that includes gate to active contacts. One method includes forming a dummy gate structure including a dummy gate electrode having...
9040952 Semiconductor device and method of fabricating the same  
A semiconductor device includes a first conductive layer extending in a first direction, a second conductive layer extending in a second direction and disposed over the first conductive layer, the...
9034746 Gate silicidation  
A method for performing silicidation of gate electrodes includes providing a semiconductor device having first and second transistors with first and second gate electrodes formed on a...
9035369 Semiconductor structure and manufacturing method of the same  
A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a substrate, a first stacked structure, and a first conductive layer. The first...
9034745 Semiconductor device and method for manufacturing the same  
A semiconductor device and a method for manufacturing the same are disclosed. A semiconductor device includes a contact hole formed over a semiconductor substrate so as to open an active region, a...
9023723 Method of fabricating a gate-all-around word line for a vertical channel DRAM  
A method of fabricating a self-aligned buried wordline in a structure which contains a self-aligned buried bit line, where the overall structure which makes up a portion of a vertical channel...
9006089 Nonvolatile memory device and method for fabricating the same  
The technology of the present invention relates to a non-volatile memory device and a fabrication method thereof. The non-volatile memory device includes channel layers protruding vertically from...
9006046 Deposition method and method for manufacturing semiconductor device  
An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using...
8999797 Semiconductor device with air gaps and method for fabricating the same  
A method for fabricating a semiconductor device includes forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial...
8993428 Structure and method to create a damascene local interconnect during metal gate deposition  
A method and structure to create damascene local interconnect during metal gate deposition. A method includes: forming a gate dielectric on an upper surface of a substrate; forming a mandrel on...
8987106 Semiconductor device manufacturing method  
A semiconductor device manufacturing method includes forming a channel dope layer having a first electric conductive-type inside of a semiconductor substrate, the channel dope layer being formed...
8987816 Contact power rail  
A method for forming CA power rails using a three mask decomposition process and the resulting device are provided. Embodiments include forming a horizontal diffusion CA power rail in an active...
8980731 Methods of forming a semiconductor device  
Methods of forming a semiconductor device are provided. The methods may include forming first and second layers that are alternately and repeatedly stacked on a substrate, and forming an opening...
8969187 Self-aligned contacts  
A method of forming a gate structure with a self-aligned contact is provided and includes sequentially depositing a sacrificial layer and a secondary layer onto poly-Si disposed at a location of...
8956929 Method for manufacturing semiconductor device  
In a semiconductor device including a transistor in which an oxide semiconductor layer, a gate insulating layer, and a gate electrode layer on side surfaces of which sidewall insulating layers are...
8956935 Method for manufacturing compound semiconductor device  
A compound semiconductor device includes: a compound semiconductor multilayer structure; a gate insulating film on the compound semiconductor multilayer structure; and a gate electrode, wherein...
8951907 Semiconductor devices having through-contacts and related fabrication methods  
Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a layer of dielectric...
8946070 Four terminal transistor fabrication  
Producing a transistor includes providing a substrate including in order a first electrically conductive material layer positioned on the substrate and a first electrically insulating material...
8946914 Contact power rail  
A method for forming CA power rails using a three mask decomposition process and the resulting device are provided. Embodiments include forming a horizontal diffusion CA power rail in an active...
8946007 Inverted thin channel mosfet with self-aligned expanded source/drain  
After formation of a gate electrode, a source trench and a drain trench are formed down to an upper portion of a bottom semiconductor layer having a first semiconductor material of a...
8946828 Semiconductor device having elevated structure and method of manufacturing the same  
A semiconductor device includes a semiconductor substrate; a gate stack overlying the substrate, a spacer formed on sidewalls of the gate stack, and a protection layer overlying the gate stack for...
8937006 Method of semiconductor integrated circuit fabrication  
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes receiving a semiconductor device. The method also includes forming a step-forming-hard-mask (SFHM)...
8932936 Method of forming a FinFET device  
A method for fabricating a device is disclosed. An exemplary method includes providing a substrate and forming a plurality of fins over the substrate. The method further includes forming a first...
8927406 Dual damascene metal gate  
A method for fabricating a dual damascene metal gate includes forming a dummy gate onto a substrate, disposing a protective layer on the substrate and the dummy gate, and growing an expanding...
8927408 Self-aligned contact employing a dielectric metal oxide spacer  
A dielectric liner is formed on sidewalls of a gate stack and a lower contact-level dielectric material layer is deposited on the dielectric liner and planarized. The dielectric liner is recessed...
8927355 Method of manufacturing semiconductor devices  
A method of manufacturing a semiconductor device, including the second sacrificial layer receiving a gate structure include a metal and a spacer on a sidewall of the gate structure therethrough...
8927407 Method of forming self-aligned contacts for a semiconductor device  
Disclosed herein is a method of forming self-aligned contacts for a semiconductor device. In one example, the method includes forming a plurality of spaced-apart sacrificial gate electrodes above...
8921181 Flourine-stabilized interface  
Methods for forming an electronic device having a fluorine-stabilized semiconductor substrate surface are disclosed. In an exemplary embodiment, a layer of a high-κ dielectric material is formed...
8921944 Semiconductor device  
A semiconductor device is disclosed. The semiconductor device includes: a substrate; a metal-oxide semiconductor (MOS) transistor disposed in the substrate; and a shallow trench isolation (STI)...
8916429 Aqueous cleaning techniques and compositions for use in semiconductor device manufacturing  
Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is...
8916925 Vertical semiconductor device and method of manufacturing the same  
A vertical semiconductor device includes a first active pillar vertically protruded from a semiconductor substrate; a first vertical gate connected to at least one side of the first active pillar...
8906793 Borderless contact for an aluminum-containing gate  
An aluminum-containing material is employed to form replacement gate electrodes. A contact-level dielectric material layer is formed above a planarization dielectric layer in which the replacement...
8906794 Gate silicidation  
A method for performing silicidation of gate electrodes includes providing a semiconductor device having first and second transistors with first and second gate electrodes formed on a...
8895425 Method of forming channel layer of electric device and method of manufacturing electric device using the same  
A method of forming a channel layer of an electric device according to an embodiment is provided. First, a conductive substrate including an insulating layer on the substrate is provided. The...
8884356 Nonvolatile semiconductor memory device and method for manufacturing same  
According to one embodiment, a nonvolatile semiconductor memory device includes: a stacked body provided on a foundation layer and including a plurality of electrode layers and a plurality of...
8884344 Self-aligned contacts for replacement metal gate transistors  
Embodiments of the invention include methods of forming gate caps. Embodiments may include providing a semiconductor device including a gate on a semiconductor substrate and a source/drain region...
8883586 Mol insitu Pt rework sequence  
The amount of Pt residues remaining after forming Pt-containing NiSi is reduced by performing an O2 flash while shaping gate spacers, and then cleaning and applying a second application of Aqua...
8883622 Method of fabricating and semiconductor memory device using the same  
A method of fabricating a semiconductor memory device includes preparing a semiconductor substrate which is divided into a cell array region and a core and peripheral region adjacent to the cell...
8883621 Semiconductor structure and method of fabricating MOS device  
Provided is a semiconductor structure including a gate structure, a first spacer, and a second spacer. The gate structure is formed on a substrate and includes a gate material layer, a first hard...
8877622 Process for producing an integrated circuit  
A process for producing an integrated circuit on the surface of a substrate, the process including: producing a first layer, including active zones and insulating zones, on the surface of the...
8865588 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device includes forming a first interconnection and a second interconnection above a semiconductor substrate, forming a first sidewall insulating film on...
8866156 Silicon carbide semiconductor device and method for manufacturing same  
A silicon carbide semiconductor device includes a silicon carbide substrate and a contact electrode. The silicon carbide substrate includes an n type region and a p type region that makes contact...
8865579 Nonvolatile memory device and method of manufacturing the same  
A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing...
8853036 Semiconductor device and method of manufacturing the same  
In a power feeding region of a memory cell (MC) in which a sidewall-shaped memory gate electrode (MG) of a memory nMIS (Qnm) is provided by self alignment on a side surface of a selection gate...
8853066 Method for manufacturing pixel structure  
A method for manufacturing pixel structure is provided. A patterned conductor layer including a gate, a scan line and a conductor pattern is formed on a substrate. A gate insulating layer, a metal...
8846514 Thin film transistor array panel and manufacturing method thereof  
A thin film transistor array panel according to an exemplary embodiment of the present disclosure includes: an insulating substrate; a gate electrode disposed on the insulating substrate; a gate...
8846513 Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fill  
When forming self-aligned contact elements in sophisticated semiconductor devices in which high-k metal gate electrode structures are to be provided on the basis of a replacement gate approach,...
8841192 Methods of forming silicide regions and resulting MOS devices  
A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode...
8836009 Flash memory  
A MONOS Charge-Trapping flash (CTF), with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125° C. and excellent 106 endurance at a fast 100 μs...
8835318 HNO3 single wafer clean process to strip nickel and for MOL post etch  
Ni and Pt residuals are eliminated by replacing an SPM cleaning process with application of HNO3 in an SWC tool. Embodiments include depositing a layer of Ni/Pt on a semiconductor substrate,...