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7615828 |
CMOS devices adapted to prevent latchup and methods of manufacturing the same
In a first aspect, a first apparatus is provided. The first apparatus is a semiconductor device on a substrate that includes (1) a first metal-oxide-semiconductor field-effect transistor (MOSFET);...
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7615475 |
Method for fabricating landing polysilicon contact structures for semiconductor devices
A method for forming an integrated circuit device, e.g., memory, logic. The method includes providing a semiconductor substrate (e.g., silicon wafer) comprising a surface region and forming a...
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7615432 |
HDP/PECVD methods of fabricating stress nitride structures for field effect transistors
A stress nitride structure is formed on an integrated circuit field effect transistor by high density plasma (HDP) depositing a first stress nitride layer on the integrated circuit field effect...
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7611979 |
Metal gates with low charge trapping and enhanced dielectric reliability characteristics for high-k gate dielectric stacks
A multilayered gate stack having improved reliability (i.e., low charge trapping and gate leakage degradation) is provided. The inventive multilayered gate stack includes, from bottom to top, a...
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7579224 |
Method for manufacturing a thin film semiconductor device
It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is...
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7575990 |
Method of forming self-aligned contacts and local interconnects
A method of forming a plurality of self-aligned contacts of a core region and local interconnect openings of a peripheral region of a semiconductor device is disclosed. A plurality of...
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7572721 |
Method of forming a semiconductor device having an etch stop layer and related device
In one embodiment, a lower interlayer dielectric layer, and first and second landing pads penetrating the lower interlayer dielectric layer are formed on a substrate. Interconnection patterns...
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7572719 |
Semiconductor device and manufacturing method thereof
A method of manufacturing a semiconductor device is provided. The method includes: sequentially forming an oxide layer and a nitride layer on a substrate having a gate insulating layer and a gate...
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7569856 |
Semiconductor device and method for manufacturing the same
A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film....
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7553748 |
Semiconductor device and method of manufacturing the same
According to one embodiment, a gate structure including a gate insulation pattern, a gate pattern and a gate mask is formed on a channel region of a substrate to form a semiconductor device. A...
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RE40790 |
Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
A semiconducting processing method for making electrical contacts with an active area in sub-micron geometries includes: (a) providing a pair of conductive runners on a semiconductor wafer; (b)...
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7547597 |
Direct alignment scheme between multiple lithography layers
A method for directly aligning multiple lithography masking layers. The method may be used to fabricate a flash plus logic structure. The flash plus logic structure may comprise a flash memory...
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7547594 |
Metal-oxide-semiconductor transistor and method of forming the same
A method of forming a metal-oxide-semiconductor (MOS) transistor device is provided. First, a semiconductor substrate is prepared. Subsequently, a gate structure is formed on the semiconductor...
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7538017 |
Method of manufacturing a thin film transistor, a thin film transistor manufactured by the method, a method of manufacturing flat panel display device, and a flat panel display device manufactured by the method
Provided are a method of manufacturing a plastic substrate having a TFT, a substrate manufactured thereby, a method of manufacturing a flat panel display device, and a flat display device...
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7534711 |
System and method for direct etching
System and method for direct etching. According to an embodiment, the present invention provides a method for manufacturing an integrated circuit device. The method includes a step for providing a...
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7531454 |
Method and apparatus of fabricating liquid crystal display device
A method and an apparatus of fabricating a liquid crystal display device adapted to improve a lift-off efficiency are disclosed. The liquid crystal display device is also disclosed. The method...
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7528059 |
Method for reducing polish-induced damage in a contact structure by forming a capping layer
By forming a capping layer after a CMP process for planarizing the surface topography of an ILD layer, any surface irregularities may be efficiently sealed, thereby reducing the risk for forming...
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7524761 |
Method for manufacturing semiconductor device capable of reducing parasitic bit line capacitance
A semiconductor memory device is manufactured by: forming a hole by etching an interlayer insulation film formed over a semiconductor substrate; forming a barrier film over the interlayer...
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7521348 |
Method of fabricating semiconductor device having fine contact holes
A method for fabricating a semiconductor device having fine contact holes is exemplarily disclosed. The method includes forming an isolation layer defining active regions on a semiconductor...
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7517767 |
Forming conductive stud for semiconductive devices
Embodiments of the present invention provide a method of forming a conductive stud contacting a semiconductor device. The method includes forming a protective layer covering the semiconductor...
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7514307 |
Method of manufacturing a semiconductor apparatus
A method of manufacturing a semiconductor apparatus of the present invention comprises forming body diffusion layer, a gate electrode, and an interlayer dielectric over an surface of a...
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7491634 |
Methods for forming roughened surfaces and applications thereof
Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by...
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7491602 |
Structures and methods for improved capacitor cells in integrated circuits
Systems, devices, structures, and methods are described that inhibit atomic migration that creates an open contact between a metallization layer and a conductive layer of a semiconductor structure....
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7479415 |
Fabrication method of polycrystalline silicon liquid crystal display device
A method for fabricating a polysilicon silicon liquid crystal display device is disclosed in which a contact hole connecting source and drain electrodes to an active layer is formed without a...
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7465656 |
Semiconductor device and method for fabricating the same
A semiconductor device includes a conductive pattern formed on a substrate, a conductive land formed to come into contact with at least part of the top surface of the conductive pattern, and a...
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7462903 |
Methods for fabricating semiconductor devices and contacts to semiconductor devices
Methods for fabricating semiconductor structures and contacts to semiconductor structures are provided. A method comprises providing a substrate and forming a gate stack on the substrate. The gate...
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7459389 |
Method of forming a semiconductor device having air gaps and the structure so formed
A method of forming a semiconductor device. Depositing alternating layers of a first and a second dielectric material, wherein the first and second dielectric materials are selectively etchable at...
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7456062 |
Method of forming a semiconductor device
A sidewall spacer structure is formed adjacent to a gate structure whereby a material forming an outer surface of the sidewall spacer structure contains nitrogen. Subsequent to its formation the...
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7427546 |
Transistor device and method for manufacturing the same
A transistor device includes a recess in a surface of semiconductor substrate, a gate insulation layer formed over an inner side of the recess, a gate conductor filling the recess in which the gate...
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7422942 |
Method for fabricating a semiconductor device having an insulation film with reduced water content
A semiconductor device having a self-aligned contact hole is formed by providing a side wall oxide film on a gate electrode, covering the gate electrode and the side wall oxide film by an oxide...
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7419896 |
Method for forming landing plug contact in semiconductor device
A method for forming a landing contact plug in a semiconductor device is provided. The method includes the steps of: forming a plurality of gate structures on a substrate, each gate structure...
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7411251 |
Self protecting NLDMOS, DMOS and extended voltage NMOS devices
In an NLDMOS, DMOS or NMOS active device the ability to withstand snapback under stress conditions is provided by moving the hot spot away from the drain contact region. This is achieved by moving...
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7387919 |
Methods of fabricating a semiconductor device having a node contact structure of a CMOS inverter
In one embodiment, an intrinsic single crystalline semiconductor plug is formed to pass through a lower insulating layer using a selective epitaxial growth process employing a node impurity region...
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7381617 |
Method of fabricating flash memory device
A method of fabricating flash memory devices includes the steps of forming a stop nitride film and an oxide film on a semiconductor substrate having a predetermined structure formed therein,...
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7371634 |
Amorphous carbon contact film for contact hole etch process
A semiconductor device including a contact etch stop layer and contact hole formation method for reduced underlying material loss and improved device performance, the method including providing a...
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7365358 |
Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device
A method of fabricating a single crystal thin film includes forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment,...
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7355254 |
Pinning layer for low resistivity N-type source drain ohmic contacts
A system or apparatus including an N-type transistor structure including a gate electrode formed on a substrate and source and drain regions formed in the substrate; a contact to the source region;...
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7348266 |
Method and apparatus for a metallic dry-filling process
An iPVD system is programmed to deposit uniform material, such as a metallic material, into high aspect ratio nano-sized features on semiconductor substrates using a process that enhances the...
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7338903 |
Sequential reducing plasma and inert plasma pre-treatment method for oxidizable conductor layer
A method for forming a barrier layer upon a copper containing conductor layer employs a hydrogen containing plasma treatment of the copper containing conductor layer followed by an argon plasma...
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7329604 |
Semiconductor device and method for fabricating the same
The method for fabricating a semiconductor device comprises the step of forming a Co film 72 on a gate electrode 30 having a gate length L g of below 50 nm including 50 nm; the first thermal...
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7312150 |
Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the same
A method of forming a cobalt disilicide layer and a method of manufacturing a semiconductor device using the same are provided. The method of forming a cobalt disilicide layer includes forming a...
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7309652 |
Method for removing photoresist layer and method for forming metal line in semiconductor device using the same
Disclosed are a method for removing a photoresist layer and a method for forming a metal line using the same. The method for removing a photoresist pattern, including the steps of: forming a bottom...
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7309637 |
Method to enhance device performance with selective stress relief
A structure and method of fabrication of a semiconductor device having a stress relief layer under a stress layer in one region of a substrate. In a first example, a stress relief layer is formed...
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7307322 |
Ultra-uniform silicide system in integrated circuit technology
A structure of an integrated circuit is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed over a gate dielectric on the semiconductor substrate. Source/drain...
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7297621 |
Flexible carbon-based ohmic contacts for organic transistors
The present invention relates to a system and method of organic thin-film transistors (OTFTs). More specifically, the present invention relates to employing a flexible, conductive particle-polymer...
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7291895 |
Integrated circuitry
A silicon nitride comprising layer formed over a semiconductor substrate includes Al, Ga or a mixture thereof. A silicon dioxide comprising layer is formed proximate thereto. The silicon dioxide...
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7279419 |
Formation of self-aligned contact plugs
Methods of forming a contact structure for semiconductor assemblies are described. One method provides process steps to create an inner dielectric isolation layer after the contact region is...
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7265040 |
Cleaning solution and method for selectively removing layer in a silicidation process
A cleaning solution selectively removes a titanium nitride layer and a non-reacting metal layer. The cleaning solution includes an acid solution and an oxidation agent with iodine. The cleaning...
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7259083 |
Local interconnect manufacturing process
The present invention is directed to a method of fabricating a local interconnect. A disclosed method involves forming two separate cavities in the ILD above two electrical contacts of a...
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7256118 |
Semiconductor device using low-K material as interlayer insulating film and its manufacture method
A semiconductor element is formed over a surface of a semiconductor substrate. A first insulating film is formed over the surface of the semiconductor substrate, the first insulating film covering...
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