Patents in Class 438/585

Matches 1 - 50 out of 861

Match	Document	Document Title
1	7622376	Method for manufacturing semiconductor device using polymer A method for manufacturing a semiconductor device using a polymer is provided, wherein a first insulating layer is formed on a substrate, and a first photoresist pattern is formed over the first...
2	7618868	Method of manufacturing field effect transistors using sacrificial blocking layers Provided are a more stable semiconductor integrated circuit device and a method of manufacturing the same. The method includes providing a semiconductor substrate comprising a first transistor...
3	7615421	Method for fabricating thin film transistor The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline...
4	7611978	Method for forming gate electrode of semiconductor device Provided is a method for forming a gate electrode of a semiconductor device which can form a gate electrode having a fine line width. Disclosed method steps include forming a gate oxide film, a...
5	7608498	Method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having...
6	7601622	Method of forming fine patterns in semiconductor device and method of forming gate using the same There are provided a method of forming fine patterns in a semiconductor device, and a method of forming a gate with a fine critical dimension using the same. In the method of forming fine patterns...
7	7601583	Transistor structure of memory device and method for fabricating the same A memory device includes an active area protruding from a semiconductor substrate. A recess is formed in the active area. A field oxide layer is formed on the semiconductor substrate. A gate...
8	7601577	Work function control of metals Forming metal gate transistors that have different work functions is disclosed. In one example, a first metal, which is a ‘mid gap’ metal, is manipulated in first and second regions by second...
9	7595262	Manufacturing method for an integrated semiconductor structure A manufacturing method for an integrated semiconductor structure and a corresponding semiconductor structure is disclosed. The method includes forming a peripheral circuitry in a peripheral device...
10	7589005	Methods of forming semiconductor structures and systems for forming semiconductor structures A method and system for forming a semiconductor structure includes forming at least one material layer over a substrate. At least one portion of the material layer is etched with at least one first...
11	7585756	Semiconductor device and method of manufacturing the same A MOS transistor includes a substrate, source/drain regions formed at portions of the substrate, and a channel region formed between the source/drain regions. The MOS transistor further includes a...
12	7585754	Method of forming bonding pad opening A method of forming a bonding pad opening is provided. A passivation layer and a mask layer are sequentially formed on a substrate having a bonding pad formed thereon. Thereafter, the passivation...
13	7585706	Method of fabricating a semiconductor device The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion...
14	7582924	Semiconductor devices having polymetal gate electrodes Semiconductor devices and methods of fabricating the same are provided. A gate insulating film is provided on a semiconductor substrate. A polymetal gate electrode is provided on the gate...
15	7582523	Method of manufacturing semiconductor device including insulated-gate field-effect transistors A method of manufacturing a semiconductor device including MOS transistors is disclosed. N-type and p-type semiconductor films are formed respectively above first and second surface regions of a...
16	7582520	Method of fabricating complementary metal-oxide-semiconductor transistor and metal-oxide-semiconductor transistor A method of fabricating a metal-oxide-semiconductor transistor is provided. A first gate structure and a second gate structure are formed on a substrate. The first gate structure has a dimension...
17	7579231	Semiconductor device and method of manufacturing the same Disclosed is a method of manufacturing a semiconductor device, comprising forming a metal compound film directly or indirectly on a semiconductor substrate, forming a metal-containing insulating...
18	7576400	Circuitry and gate stacks The present invention includes semiconductor circuitry. Such circuitry encompasses a metal silicide layer over a substrate and a layer comprising silicon, nitrogen and oxygen in physical contact...
19	7572720	Semiconductor device and method for fabricating the same A semiconductor device includes a substrate, first, second, and third gate lines disposed over the substrate, the first and second gate lines defining a first trench with a first aspect ratio, the...
20	7572719	Semiconductor device and manufacturing method thereof A method of manufacturing a semiconductor device is provided. The method includes: sequentially forming an oxide layer and a nitride layer on a substrate having a gate insulating layer and a gate...
21	7572718	Semiconductor device and manufacturing method thereof In the case of providing an LDD region for a TFT, it is necessary to form separately an insulating film to be a mask or to contrive the shape of a gate electrode layer in order to have the...
22	7569480	Semiconductor devices and methods of fabricating the same In a method of fabricating a semiconductor device, a first mask pattern is formed on a substrate. The first mask pattern has a first opening formed to expose the substrate. An oxidation barrier...
23	7566644	Method for forming gate electrode of semiconductor device A method for forming a gate electrode of a semiconductor device is provided wherein a hard mask layer which is a nitride film is deposited and subjected to an additional surface deposition process...
24	7566622	Early contact, high cell density process A method of fabricating a power semiconductor device in which contact trenches are formed prior to forming the gate trenches.
25	7560396	Material for electronic device and process for producing the same An electronic device material comprising at least an electronic device substrate and a silicon oxynitride film disposed on the substrate is provided. The silicon oxynitride film is characterized by...
26	7560172	Low voltage CMOS structure with dynamic threshold voltage A method for dynamically varying a threshold voltage of a complimentary metal oxide semiconductor (CMOS) includes providing a substrate pickup formed a semiconductor material type which is...
27	7557024	Single poly CMOS imager More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent...
28	7556995	MOS transistor manufacturing A MOS transistor made in monolithic form, vias contacting the gate and the source and drain regions of the transistor being formed on the other side of the channel region with respect to the gate.
29	7547621	LPCVD gate hard mask A gate hard mask is deposited on a gate structure using low pressure chemical vapor deposition (LPCVD). By doing so, the wet etch removal ratio (WERR) of the gate hard mask relative to the...
30	7547589	Method for fabricating semiconductor device, and electro-optical device, integrated circuit and electronic apparatus including the semiconductor device The invention provides a technique that enables formation of minute patterns on an uneven substrate in volume production without reducing productivity. The method for fabricating a semiconductor...
31	7544619	Method of fabricating semiconductor device An insulating film is formed on a main surface of a substrate. A conductive film is formed on the insulating film. A lower layer resist film, an intermediate layer, an anti-reflection film and an...
32	7544595	Forming a semiconductor device having a metal electrode and structure thereof A method for forming a semiconductor device includes forming a gate dielectric over a substrate, forming a metal electrode over the gate dielectric, forming a first sacrificial layer which includes...
33	7544594	Method of forming a transistor having gate protection and transistor formed according to the method A microelectronic device and a method of forming same. The method comprises: a transistor gate; a first spacer and a second spacer respectively adjacent a first side and a second side of the gate;...
34	7544556	Process for forming CMOS devices using removable spacers A process for forming CMOS devices is disclosed in which disposable spacers are used to obtain a structure having improved gap-fill characteristics. First, gate film stacks are formed on the...
35	7544554	Methods of forming gatelines and transistor devices The invention includes semiconductor constructions, methods of forming gatelines, and methods of forming transistor structures. The invention can include, for example, a damascene method of forming...
36	7541269	Method of forming tungsten polymetal gate having low resistance A tungsten polymetal gate is made by forming a gate insulation layer and a polysilicon layer on a semiconductor substrate; depositing a barrier layer on the polysilicon layer; depositing a tungsten...
37	7541216	Method of aligning deposited nanotubes onto an etched feature using a spacer A method of forming an aligned connection between a nanotube layer and a raised feature is disclosed. A substrate having a raised feature has spacers formed next to the side of the raised feature....
38	7540970	Methods of fabricating a semiconductor device Methods of fabricating a semiconductor device are provided. Methods of forming a finer pattern of a semiconductor device using a buffer layer for retarding, or preventing, bridge formation between...
39	7538018	Gate structure and method for fabricating the same, and method for fabricating memory and CMOS transistor layout A method for fabricating a gate structure is provided. A pad oxide layer, a pad conductive layer and a dielectric layer are sequentially formed over a substrate. A portion of the dielectric layer...
40	7538001	Transistor gate forming methods and integrated circuits A transistor gate forming method includes forming a first and a second transistor gate. Each of the two gates includes a lower metal layer and an upper metal layer. The lower metal layer of the...
41	7537994	Methods of forming semiconductor devices, assemblies and constructions Embodiments disclosed herein include methods in which a pair of openings are formed into semiconductor material, with the openings being spaced from one another by a segment of the semiconductor...
42	7537974	Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same A photoresist composition includes a novolac resin having where each of R 1 , R 2 , R 3 , and R 4 is an alkyl group having a hydrogen atom or between one through six carbon atoms and n is an...
43	7534707	MOS Transistors having inverted T-shaped gate electrodes and fabrication methods thereof MOS transistors have an active region defined in a portion of a semiconductor substrate, a gate electrode on the active region, and drain and source regions in the substrate. First and second...
44	7531437	Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric material A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is...
45	7531404	Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer A method of forming a transistor gate stack having an annealed gate dielectric layer begins by providing a substrate that includes a first and second spacer separated by a trench. A conformal...
46	7528046	Method for manufacturing semiconductor device A method for manufacturing a semiconductor device including a substrate, a memory cell region including first pattern, first guard ring around the memory cell, second guard ring around the first...
47	7521371	Methods of forming semiconductor constructions having lines In some embodiments, an opening is formed through a first material, and sidewall topography of the opening is utilized to form a pair of separate anistropically etched spacers. The spacers are...
48	7521304	Method for forming integrated circuit A method of forming an integrated circuit includes providing a buffer layer comprising a dielectric material above a layer of conductive material and providing a layer of mask material above the...
49	7517806	Integrated circuit having pairs of parallel complementary FinFETs A method and structure for an integrated circuit structure that utilizes complementary fin-type field effect transistors (FinFETs) is disclosed. The invention has a first-type of FinFET which...
50	7517746	Metal oxide semiconductor transistor with Y shape metal gate and fabricating method thereof A method of manufacturing a metal oxide semiconductor transistor having a metal gate is provided. The method firstly includes a step of providing a substrate. A dummy gate is formed on the...

Matches 1 - 50 out of 861

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