Matches 351 - 400 out of 868 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
Match Document Document Title
6689675 Method for making a semiconductor device having a high-k gate dielectric  
A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, oxidizing the surface of the high-k gate dielectric layer, and...
6686286 Method for forming a borderless contact of a semiconductor device  
A method for forming a borderless contact of a semiconductor device includes forming a gate electrode on a field oxide of the semiconductor substrate, patterning a stacked structure of a buffer...
6686277 Method of manufacturing semiconductor device  
A refractory metal film is formed over a semiconductor substrate, and a first nitride film is formed over the refractory metal film. Thereafter, the refractory metal film and the nitride film are...
6686264 Methods of forming binary noncrystalline oxide analogs of silicon dioxide  
A non-crystalline oxide is represented by the formula: ABO 4 wherein A is an element selected from Group IIIA of the periodic table; and B is an element selected from Group VB of the periodic table.
6682995 Iridium conductive electrode/barrier structure and method for same  
A conductive barrier, useful as a ferroelectric capacitor electrode, having high temperature stability has been provided. This conductive barrier permits the use of iridium (Ir) metal in IC...
6682994 Methods for transistor gate formation using gate sidewall implantation  
Methods are disclosed for semiconductor device fabrication in which MOS transistor gates are to be formed. Polysilicon gate structures and sidewall spacers are formed, with upper portions of the...
6681379 Phase shifting design and layout for static random access memory  
Methods and apparatuses for fully defining static random access memory (SRAM) using phase shifting layouts are described. The approach includes identifying that a layout includes SRAM cells and...
6673705 Method of manufacturing a MISFET having post oxide films having at least two kinds of thickness  
Disclosed is a semiconductor device in which first and second MISFETs are formed, each of the first and second MISFETs including a source region, a drain region, a gate insulating film, a gate...
6667227 Trenched gate metal oxide semiconductor device and method  
A Metal Oxide Semiconductor (MOS) transistor and method for improving device scaling comprises a trenched polysilicon gate formed within a trench etched in a semiconductor substrate and further...
6664153 Method to fabricate a single gate with dual work-functions  
A method for forming a single gate having a dual work-function is described. A gate electrode is formed overlying a gate dielectric layer on a substrate. Sidewalls of the gate electrode are...
6660577 Method for fabricating metal gates in deep sub-micron devices  
A method for fabricating metal gates in deep sub-micron CMOS devices. The method blanket deposits a transition metal nitride layer on top of a gate dielectric layer for forming gate electrodes for...
6656808 Transistor having variable width gate electrode and method of manufacturing the same  
A transistor includes a substrate and a gate electrode formed on the substrate and having a wider upper portion than lower portion. A spacer is formed on the side wall of the gate electrode from...
6656798 Gate processing method with reduced gate oxide corner and edge thinning  
Disclosed is a method of processing a semiconductor gate structure on a semiconductor wafer, the method comprising providing a semiconductor structure with an active device area capped with a pad...
6649502 Methods of forming multilayer dielectric regions using varied deposition parameters  
A dielectric region for a device such as a memory cell capacitor is formed by depositing a metal oxide, such as tantalum oxide, on a substrate at a first deposition rate in a first atmosphere...
6649500 Semiconductor device including an insulated gate field effect transistor and method of manufacturing the same  
A semiconductor device is disclosed including an IGFET (insulated gate field effect transistor) and a method of manufacturing the same. The semiconductor device may include an oxide film ( 115 ) or...
6645795 Polysilicon doped transistor using silicon-on-insulator and double silicon-on-insulator  
Steep concentration gradients are achieved in semiconductor device of small sizes formed on SOI or double SOI wafers by using implanted polycrystalline material such as polysilicon as a solid...
6642592 Semiconductor device and method for fabricating same  
A semiconductor device and method for fabricating the same which improves reliability of the semiconductor device is disclosed. The semiconductor device includes: a first insulating film and a gate...
6638825 Method for fabricating a high voltage device  
A high voltage device and a method for fabricating the same are disclosed, which improves voltage-resistant characteristics to protect against high voltage applied to a gate electrode. The high...
6638841 Method for reducing gate length bias  
A method for reducing a gate length bias is disclosed. The method utilizes an additional blanket ion implantation process to adjust the etching property of the undoped conductive layer. According...
6638829 Semiconductor structure having a metal gate electrode and elevated salicided source/drain regions and a method for manufacture  
A semiconductor structure and a process for its manufacture. A metal gate electrode is formed on a semiconductor substrate, the gate electrode being between nitride spacers. Lightly-doped drain...
6632731 Structure and method of making a sub-micron MOS transistor  
A method of fabricating a sub-micron MOS transistor includes preparing a substrate, including isolating an active region therein; depositing a gate oxide layer; depositing a first selective...
6630394 System for reducing silicon-consumption through selective deposition  
Disclosed is a system for fabricating a semiconductor device ( 100 ). A layer of cobalt ( 32 ) is deposited onto a silicon region ( 104, 106, 108 ) and annealed to form a cobalt silicide layer (...
6624055 Method for forming a plane structure  
A method for forming plane structure. It comprises the following steps: forms a liquid material with a thicker thickness on a substrate, rotating both the liquid material and the substrate around...
6620714 Method for reducing oxidation encroachment of stacked gate layer  
A method for reducing oxidation encroachment of stacked gate layer is provided by forming a silicon oxynitride layer on the sidewall surface of the stacked gate layer. A tilted ion implantation...
6620715 Method for forming sub-critical dimension structures in an integrated circuit  
A method is provided for fabricating a device, which includes device components and spacings that may each have a final dimension that is smaller than a minimum dimension obtainable by a...
6617229 Method for manufacturing transistor of double spacer structure  
A method for manufacturing a transistor of a double spacer structure is disclosed, in which a local LDD region is formed by forming a transistor including a gate electrode, and an oxide film spacer...
6617202 Method for fabricating a full depletion type SOI device  
Disclosed is a method for SOI device, and particularly to a method for fabricating a full depletion type SOI device capable of minimizing a change in a threshold voltage of transistor according to...
6617260 Method of manufacturing semiconductor device prevented from peeling of wirings from insulating film  
The present invention provides a manufacturing method of a semiconductor device which does not give rise to peeling of a metal film caused by oxygen held in a interlayer insulating film even when...
6610581 Method of forming isolation film in semiconductor device  
There is disclosed a method of forming an isolation film in a semiconductor device, the method including the steps of: forming a silicon oxide film and a silicon nitride film in that order on a...
6607950 MIS transistors with a metal gate and high-k dielectric and method of forming  
A replacement gate process is disclosed comprising the steps of forming a dummy gate stack on a substrate, depositing a PMD layer on the substrate and polishing this PMD layer to expose the top...
6605520 Method of forming silicon-germanium film  
A method of forming a silicon-germanium (SiGe) film for a gate electrode. In a metal gate manufacture process, as the content of germanium (Ge) is increased, the surface roughness of the...
6605529 Method of creating hydrogen isotope reservoirs in a semiconductor device  
The present invention provides a method of manufacturing a semiconductor device that includes incorporation of a hydrogen isotope at a relatively high processing temperature during gate oxidation...
6602772 Method for non-contact stress evaluation of wafer gate dielectric reliability  
An apparatus and method for evaluating the performance of a test dielectric material for use as a gate dielectric. The method comprises exposing a coated layer of the dielectric to a concentration...
6599820 Method of producing a semiconductor device  
A method of producing a semiconductor device having a polymetal wiring structure fabricated by a polycrystalline silicon film, a reaction preventing film, and a tungsten film comprising steps of...
6599821 Method for fabricating conductive line pattern for semiconductor device  
A method for fabricating a conductive line pattern for a semiconductor device including the steps of: forming a gate insulation film on the upper surface of a semiconductor substrate; forming a...
6596656 Manufacturing use of photomasks with an opaque pattern comprising an organic layer photoabsorptive to exposure light with wavelengths exceeding 200 NM  
A method is provided for well printing a specified pattern even when the exposure treatment using a resist mask uses exposure light with a wavelength over 200 nm. When exposure treatment is applied...
6593175 Method of controlling a shape of an oxide layer formed on a substrate  
A method of forming an oxide layer on a substrate comprises deposition of a mask layer with an opening for defining the area where the oxide layer is to be formed, and an ion implantation step...
6589821 Methods of forming thin film transistors  
A method of forming a thin film transistor over a substrate is provided whereby at least one of the source region or the drain region is conductively doped while preventing conductivity doping of...
6583037 Method for fabricating gate of semiconductor device  
Disclosed is a method for fabricating a gate of semiconductor device. The disclosed comprises the steps of: sequentially forming a gate oxide layer, a gate material layer and a mask oxide layer on...
6583036 Method of manufacturing a semiconductor device  
On a substrate, a gate insulating film, a polysilicon film on the gate insulating film, and a resist pattern on the polysilicon film are formed. Subsequently an exposed portion of the polysilicon...
6579792 Method of manufacturing a semiconductor device  
The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate ( 1 ) having a dielectric layer ( 2 ) on this substrate ( 1 ), a conductive layer...
6576536 Ultra narrow lines for field effect transistors  
A method of fabricating an ultra narrow gate electrode for an FET and/or a conductive line in an integrated circuit by first forming a mask for the gate electrode and/or conductive line on a...
6573192 Dual thickness gate oxide fabrication method using plasma surface treatment  
A method of forming on a common semiconductor body (substrate) silicon oxide layers of different thicknesses uses plasma treatment on selected portions of an original thermally grown silicon oxide...
6573169 Highly conductive composite polysilicon gate for CMOS integrated circuits  
Many integrated circuits include a type of transistor known as a metal-oxide-semiconductor, field-effect transistor, or “mosfet,” which has an insulated gate member that controls its operation....
6573193 Ozone-enhanced oxidation for high-k dielectric semiconductor devices  
A low temperature ozone-enhanced oxidation process is presented whereby amorphous high dielectric constant film devices are subject to oxidation processes at temperatures whereby crystallization of...
6566236 Gate structures with increased etch margin for self-aligned contact and the method of forming the same  
A novel gate structure and a method of forming the same for a self-aligned contact on a semiconductor substrate. The method includes forming a gate oxide layer on the semiconductor substrate. Then...
6562680 Semiconductor device and method of manufacturing the same  
A method of manufacturing a semiconductor device comprising the steps of: (a) depositing a gate insulating film, a floating gate silicon film, an insulating film between gates, and a control gate...
6562707 Method of forming a semiconductor device using selective epitaxial growth  
A method of forming a semiconductor device using selective epitaxial growth (SEG) is provided. This method includes forming an insulating layer pattern having a window on a semiconductor substrate....
6559019 Breakdown drain extended NMOS  
An MOS device and the method of making the device which includes a semiconductor substrate having a well therein of predetermined conductivity type. A tank having a surface is disposed within the...
6559051 Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors  
High quality dielectric layers, e.g., high-k dielectric layers comprised of at least one refractory or lanthanum series transition metal oxide or silicate, for use as gate insulator layers in...
Matches 351 - 400 out of 868 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >