Matches 301 - 350 out of 864 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
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6797599 Gate structure and method  
A MOSFSET structure with high-k gate dielecttrics for silicon or metal gates with gate dielectric liquid-based oxidation surface treatments prior to gate material desposition and gate formation.
6797571 Method of manufacturing semiconductor device  
The present invention provides a method of manufacturing a semiconductor device, in which while a conductive layer is formed on an oxide film formed as an insulating layer by using a CVD method,...
6797594 Semiconductor device and method of manufacturing the same  
In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P 1 ) for leading out electrodes on a...
6794279 Passivating inorganic bottom anti-reflective coating (BARC) using rapid thermal anneal (RTA) with oxidizing gas  
A method is provided, the method including forming a gate dielectric layer above a substrate layer and forming a gate conductor layer above the gate dielectric layer. The method also includes...
6790720 Method for fabricating a MOSFET and reducing line width of gate structure  
A method for fabricating a MOSFET is provided. The method comprises: providing a substrate, the substrate having a gate structure; forming a drain region and a source region in the substrate, the...
6790754 Methods for manufacturing a semiconductor device  
Method for forming contact electrodes in a semiconductor device are disclosed. An example method comprises sequentially forming a pad oxide layer, a pad nitrate layer, a dummy oxide layer, and a...
6787439 Method using planarizing gate material to improve gate critical dimension in semiconductor devices  
A method of manufacturing a semiconductor device may include forming a fin structure on an insulator. The fin structure may include side surfaces and a top surface. The method may also include...
6784098 Method for forming salicide process  
A new method is provided for forming salicided surfaces to a FET device. Gate electrodes are formed including Ti/TiN salicided contact surface regions thereto. A thin layer of silicon oxide and a...
6780742 Undulated moat for reducing contact resistance  
The present invention includes a method of forming a semiconductor device.
6777279 Semiconductor integrated circuit device and manufacturing method thereof  
Disclosed are a semiconductor integrated circuit device and a method of manufacturing the same capable of realizing the two-level gate insulator process for the DRAM without increasing the number...
6777272 Method of manufacturing an active matrix display  
A driver circuit integration type (monolithic type) active matrix display device having high performance is formed by using thin film transistors (TFT). While a nickel element is added t an...
6770532 Method for fabricating memory unit with T-shaped gate  
A method for fabricating a memory unit with T-shaped gate. A semiconductor substrate forming a dielectric layer, a first opening, and a second opening is provided in a CMOS process. A silicate...
6770520 Floating gate and method of fabricating the same  
A floating gate and fabrication method thereof. A semiconductor substrate is provided, on which a gate dielectric layer, a conducting layer, and a patterned hard mask layer are sequentially formed....
6770521 Method of making multiple work function gates by implanting metals with metallic alloying additives  
A method of forming a first and second transistors with differing work function gates by differing metals with a second metal selectively implanted or diffused into a first metal.
6770501 Deuterium reservoirs and ingress paths  
Semiconductor structures are provided with on-board deuterium reservoirs or with deuterium ingress paths which allow for diffusion of deuterium to semiconductor device regions for passivation...
6770550 Semiconductor device manufacturing method  
After a channel layer ( 7 ) containing nitrogen is formed in a channel region ( 5 ) in the main surface of a semiconductor substrate ( 1 ), a gate insulating film ( 9 ) and insulating films ( 10 )...
6753233 Method of manufacturing semiconductor device, and semiconductor device having memory cell  
A gate oxide film is formed on a substrate. Next, gate interconnections, each including a first silicon film, a silicide film and a dielectric film, are formed on the gate oxide film. Next, an...
6753266 Method of enhancing gate patterning properties with reflective hard mask  
An exemplary method of fabricating an integrated circuit can include depositing a reflective metal material layer over a layer of polysilicon, depositing an anti-reflective coating over the...
6750127 Method for fabricating a semiconductor device using amorphous carbon having improved etch resistance  
An amorphous carbon layer is implanted with one or more dopants that enhance the etch resistivity of the amorphous carbon to etchants such as chlorine and HBr that are typically used to etch...
6750126 Methods for sputter deposition of high-k dielectric films  
Methods are disclosed for fabricating transistor gate structures and high-k dielectric layers therefor by sputter deposition, in which nitridation and/or oxidation or other adverse reaction of the...
6746943 Semiconductor device and method of fabricating the same  
A semiconductor device has a semiconductor substrate, a first transistor having a first gate electrode formed of a polycrystalline silicon germanium film as formed above said semiconductor...
6740571 Method of etching a dielectric material in the presence of polysilicon  
A method is provided for advantageously etching dielectric material between highly integrated polysilicon devices with high dielectric-to-polysilicon selectivity to expose polysilicon with minimal...
6740572 Method for fabricating CMOS transistor of a semiconductor device  
A method for fabricating a complementary metal oxide semiconductor (CMOS) of a semiconductor device includes the steps of: performing an implant process to a semiconductor substrate to form N-well...
6737325 Method and system for forming a transistor having source and drain extensions  
According to one embodiment of the invention, a method for manufacturing a transistor is provided. The method includes masking a polysilicon layer of a semiconductor device to have a dimension...
6734072 Method of fabricating a MOSFET device using a spike rapid thermal oxidation procedure  
A method of forming a conductive gate structure on an underlying gate insulator layer, without the use of a plasma dry etch conductive gate definition procedure, has been developed. After formation...
6734071 Methods of forming insulative material against conductive structures  
The invention encompasses a method of forming an insulative material along a conductive structure. A conductive structure is provided over a substrate, and an electrically insulative material is...
6734088 Control of two-step gate etch process  
The present invention is directed to a method of controlling an etching process used to form a gate electrode on a semiconductor device. In one embodiment, the method comprises forming a layer of...
6734089 Techniques for improving wordline fabrication of a memory device  
Fabrication techniques for making a semiconductor device. More specifically, techniques for fabricating a wordline in a memory device are provided. Specific heat treatments may be added to the...
6730588 Method of forming SiGe gate electrode  
The present invention provides a method of forming SiGe gate electrodes using a thin nucleation layer. A dielectric layer is formed on a semiconductor wafer and a thin silicon nucleation layer...
6727134 Method of forming a nitride gate dielectric layer for advanced CMOS devices  
A process for forming a dielectric stack for use as a gate dielectric layer for sub-0.1 um MOSFET devices has been developed. The process features growth of a thin silicon nitride layer on the...
6727135 All-in-one disposable/permanent spacer elevated source/drain, self-aligned silicide CMOS  
A complementary metal oxide semiconductor (CMOS) device having silicide contacts that are self-aligned to deep junction edges formed within a surface of a semiconductor substrate as well as a...
6727173 Semiconductor processing methods of forming an utilizing antireflective material layers, and methods of forming transistor gate stacks  
In one aspect, the invention includes a semiconductor processing method comprising exposing silicon, nitrogen and oxygen in gaseous form to a high density plasma during deposition of a silicon,...
6723665 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process  
In a gas-phase treating process of a semiconductor wafer using hydrogen, there is provided a technique for safely eliminating the hydrogen in an exhaust gas discharged from a gas-phase treating...
6723608 Method for manufacturing a semiconductor device having a layered gate electrode  
A method for manufacturing a DRAM includes the steps of forming a gate oxide film, a polysilicon film and a tungsten silicide film consecutively on a silicon substrate, selective etching the...
6716686 Method for forming channels in a finfet device  
A method for forming one or more FinFET devices includes forming a source region and a drain region in an oxide layer, where the oxide layer is disposed on a substrate, and etching the oxide layer...
6713397 Manufacturing method of semiconductor device  
A gate electrode layer formed on a semiconductor substrate is etched. A gate electrode is formed while forming metal system sub-products onto the side walls of the gate electrode layer. The metal...
6713333 Method for fabricating a MOSFET  
The disclosed invention provides a method for fabricating a MOSFET comprising the steps of forming a first insulation layer over a semiconductor substrate; forming a trench which bottoms on the...
6709912 Dual Si-Ge polysilicon gate with different Ge concentrations for CMOS device optimization  
A method for forming a dual Si—Ge poly-gates having different Ge concentrations is described. An NMOS active area and a PMOS active area are provided on a semiconductor substrate separated by an...
6709879 Method for inspecting a pattern defect process  
A method for inspecting a pattern defect process is disclosed, in which a layer is formed to raise a signal-to-noise ratio on the substrate. This invention also provides a method for inspecting a...
6709937 Transistor structures  
The invention encompasses a method of forming an insulative material along a conductive structure. A conductive structure is provided over a substrate, and an electrically insulative material is...
6706571 Method for forming multiple structures in a semiconductor device  
A method of forming multiple structures in a semiconductor device includes depositing a film over a conductive layer, etching a trench in a portion of the film and forming adjacent the sidewalls of...
6703278 Method of forming layers of oxide on a surface of a substrate  
A method of forming oxide layers of different thickness on a substrate is described, wherein the oxide layers preferably serve as gate insulation layers of field effect transistors. The method...
6703297 Method of removing inorganic gate antireflective coating after spacer formation  
Various methods of manufacturing are disclosed. In one aspect, a method of manufacturing is provided that includes forming an anti-reflective coating on a structure on a substrate. A first spacer...
6703266 Method for fabricating thin film transistor array and driving circuit  
A method for fabricating a thin film transistor array and driving circuit comprising the steps of: providing a substrate; patterning a polysilicon layer and an N+ thin film over the substrate to...
6699776 MOSFET gate insulating film and method of manufacturing the same  
A semiconductor device where an interface circuit operating on a high power supply voltage and exchanging signals and data with an external device and an internal circuit operating on a low power...
6699740 Method for manufacturing a lateral double-diffused MOS transistor having stable characteristics and equal drift length  
A semiconductor device including a P-type semiconductor layer; an N-type first well on the surface of the semiconductor layer; a P-type second well on the surface of the first well; an N-type...
6689675 Method for making a semiconductor device having a high-k gate dielectric  
A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, oxidizing the surface of the high-k gate dielectric layer, and...
6686286 Method for forming a borderless contact of a semiconductor device  
A method for forming a borderless contact of a semiconductor device includes forming a gate electrode on a field oxide of the semiconductor substrate, patterning a stacked structure of a buffer...
6686277 Method of manufacturing semiconductor device  
A refractory metal film is formed over a semiconductor substrate, and a first nitride film is formed over the refractory metal film. Thereafter, the refractory metal film and the nitride film are...
6686264 Methods of forming binary noncrystalline oxide analogs of silicon dioxide  
A non-crystalline oxide is represented by the formula: ABO 4 wherein A is an element selected from Group IIIA of the periodic table; and B is an element selected from Group VB of the periodic table.
Matches 301 - 350 out of 864 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >