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9040413 Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer  
A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and lifetime by custom tailoring the average concentration of defects in the...
9040403 Methods for fabricating integrated circuits having gate to active and gate to gate interconnects  
Methods are provided for fabricating an integrated circuit that includes gate to active contacts. One method includes forming a dummy gate structure including a dummy gate electrode having...
9029253 Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same  
Nitrogen-containing phase-stabilized films, methods of forming phase-stabilized films, and structures and devices including the phase-stabilized films are disclosed. The phase-stabilized films...
9024326 Method and design of an RF thru-via interconnect  
In summary, a vertical metalized transition in the form of a via goes from the back side of a high thermal conductivity substrate and through any semiconductor layers thereon to a patterned...
9023688 Method of processing a semiconductor device  
A method for processing a semiconductor device, the method including; providing a first semiconductor layer including first transistors; forming interconnection layers overlying the transistors,...
9012887 Nanowire growth on dissimilar material  
The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of...
RE45481 Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same  
An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher...
8999842 Interconnect structure for semiconductor devices  
A method of manufacturing a semiconductor device with a cap layer for a copper interconnect structure formed in a dielectric layer is provided. In an embodiment, a conductive material is embedded...
8987119 Pillar devices and methods of making thereof  
A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the...
8975189 Method of forming fine patterns  
A method of forming a fine pattern comprises depositing a modifying layer on a substrate. A photoresist layer is deposited on the modifying layer, the photoresist layer having a first pattern. The...
8975187 Stress-controlled formation of tin hard mask  
Disclosed is a method to form a titanium nitride (TiN) hard mask in the Damascene process of forming interconnects during the fabrication of a semiconductor device, while the type and magnitude of...
8962431 Methods of forming metal silicide-comprising material and methods of forming metal silicide-comprising contacts  
A method of forming metal silicide-comprising material includes forming a substrate which includes a first stack having second metal over first metal over silicon and a second stack having second...
8951900 Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forces  
The present disclosure is directed to, among other things, an illustrative method that includes forming an opening in a dielectric material of a contact level of a semiconductor device, and...
8946087 Electroless copper deposition  
A method for providing metal filled features in a layer is provided. A metal seed layer is deposited on tops and bottoms of the features. Metal seed layer on tops of the features and overhangs is...
8927978 Organic EL element  
An object of the invention is to provide an organic electroluminescence (EL) element formed using a relatively stable new electron injection material in an atmosphere of approximately ordinary...
8927403 Selective deposition of noble metal thin films  
Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD)...
8916421 Semiconductor device packaging having pre-encapsulation through via formation using lead frames with attached signal conduits  
A semiconductor device package having pre-formed and placed through vias and a process for making such a package is provided. One or more signal conduits are coupled to a lead frame that is...
8912589 Methods and apparatuses including strings of memory cells formed along levels of semiconductor material  
Various embodiments include methods and apparatuses including strings of memory cells formed along levels of semiconductor material. One such apparatus includes a stack comprised of a number of...
8906791 Method of improving film non-uniformity and throughput  
Methods, apparatus, and systems for depositing materials with gaseous precursors are provided. In certain implementations, the methods involve providing a wafer substrate to a chamber of an...
8900983 Structure and method for self protection of power device with expanded voltage ranges  
A vertical semiconductor power device includes a top surface and a bottom surface of a semiconductor substrate constituting a vertical current path for conducting a current there through. The...
8900998 Process for electroless deposition of gold and gold alloys on silicon  
A plating bath for electroless deposition of gold and gold alloy layers on such silicon-based substrates, includes Na(AuCl4) and/or other gold (III) chloride salts as a gold ion source. The bath...
8900961 Selective deposition of germanium spacers on nitride  
A method of selectively forming a germanium structure within semiconductor manufacturing processes removes the native oxide from a nitride surface in a chemical oxide removal (COR) process and...
8895425 Method of forming channel layer of electric device and method of manufacturing electric device using the same  
A method of forming a channel layer of an electric device according to an embodiment is provided. First, a conductive substrate including an insulating layer on the substrate is provided. The...
8895406 Release strategies for making transferable semiconductor structures, devices and device components  
Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the...
8883654 Method of treating an oxidized layer of metal nitride  
The present arrangement provides a method of treating an oxidized layer of metal nitride, including oxidizing a layer (2) of metal oxide at the surface of a first layer (1) of nitride of said...
8877565 Method of forming a multilayer substrate core structure using sequential microvia laser drilling and substrate core structure formed according to the method  
A method of fabricating a substrate core structure, and a substrate core structure formed according to the method. The method includes: laser drilling a first set of via openings through a...
8871560 Plasma annealing of thin film solar cells  
Embodiments relate to a method for annealing a solar cell structure including forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure. The solar cell base structure...
8871628 Electrode structure, device comprising the same and method for forming electrode structure  
An electrode structure comprises a semiconductor junction comprising an n-type semiconductor layer and a p-type semiconductor layer; a hole exnihilation layer on the p-type semiconductor layer;...
8871624 Sealed air gap for semiconductor chip  
A method for forming a sealed air gap for a semiconductor chip including forming a gate over a substrate; forming a sacrificial spacer adjacent to the gate; forming a first dielectric layer about...
8865520 Carrier bonding and detaching processes for a semiconductor wafer  
The present invention provides a temporary carrier bonding and detaching process. A first surface of a semiconductor wafer is mounted on a first carrier by a first adhesive layer, and a first...
8859312 Distortion tolerant processing  
A method of manufacturing an integrated circuit (IC) for driving a flexible display includes depositing a pattern of spatially non-repetitive features in a first layer on a flexible substrate,...
8853046 Using TiON as electrodes and switching layers in ReRAM devices  
A single TiON film is used to form a ReRAM device by varying the oxygen and nitrogen content throughout the device to form the electrodes and switching layer. A ReRAM device that can be formed in...
8853068 Method of fabricating dual high-k metal gate for MOS devices  
The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k...
8845866 Optoelectronic devices having electrode films and methods and system for manufacturing the same  
A method and system for DC magnetron sputtering deposition of films on plastic substrates. The method includes using a shield to block deposition in a spatial region corresponding to a plasma...
8846537 Method for forming fine pitch structures  
A mold having an open interior volume is used to define patterns. The mold has a ceiling, floor and sidewalls that define the interior volume and inhibit deposition. One end of the mold is open...
8828278 Electroplating additive for the deposition of metal, a binary, ternary, quaternary or pentanary alloy of elements of group 11 (IB)—group 13 (IIIA)—Group 16 (VIA)  
The invention relates to electroplating additives for the deposition of a group IB metal/binary or ternary group IB-group IIIA/ternary, quaternary or pentanary group IB-group IIIA-group VIA alloy...
8822350 Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus  
An oxide film is formed, having a specific film thickness on a substrate by alternately repeating: forming a specific element-containing layer on the substrate by supplying a source gas containing...
8815725 Low alpha particle emission electrically-conductive coating  
An electrically conductive paste providing low alpha particle emission is provided. A resin and conductive particles are mixed, and a curing agent is added. A solvent is subsequently added. The...
8809208 Nano-tube thermal interface structure  
A structure, comprising: a semiconductor structure having an electrically and thermally conductive layer disposed on one surface of the semiconductor structure; an electrically and thermally...
8802557 Micro bump and method for forming the same  
A method for forming a micro bump includes forming a first nano-particle layer on a substrate and forming a second nano-particle layer on the first nano-particle layer. The first and second...
8796084 Method for removing hard masks on gates in semiconductor manufacturing process  
A method for removing hard masks on gates in a semiconductor manufacturing process is conducted as follows. First of all, a first gate and a second gate with hard masks are formed on a...
8794498 Electronic component device and method for producing the same  
In a method for producing an electronic component device, a heat bonding step is performed in a state in which low melting point metal layers including low melting point metals including, for...
8796158 Methods for forming circuit pattern forming region in an insulating substrate  
A method for forming a circuit pattern forming region in an insulating substrate may include preparing a metallic pattern, coating a polymer solution on a casting vessel, precuring the polymer...
8785314 Etch bias homogenization  
Methods and memory devices formed using etch bias homogenization are provided. One example method of forming a memory device using etch bias homogenization includes forming conductive material at...
8772145 Carbon nanotube dispersion liquid and method of manufacturing thin layer and display panel using the same  
The present invention relates to a carbon nanotube dispersion liquid includes carbon nanotubes, a self assembly material having —NR2 in one terminal thereof and —Si(OR)3 or —SH in the other...
8759207 Semiconductor structure and method for making same  
One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a seed layer over the...
8759162 Nonvolatile semiconductor memory device and method of manufacturing the same  
A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive...
8753968 Metal gate process  
A metal gate process includes the following steps. An isolating layer on a substrate is provided, where the isolating layer has a first recess and a second recess. A first metal layer covering the...
8741753 Use of band edge gate metals as source drain contacts  
A device includes a gate stack formed over a channel in a semiconductor substrate. The gate stack includes a layer of gate insulator material, a layer of gate metal overlying the layer of gate...
8735267 Buried word line structure and method of forming the same  
A method of forming a buried word line structure is provided. A first mask layer, an interlayer and a second mask layer are sequentially formed on a substrate, wherein the second mask layer has a...