Matches 151 - 200 out of 381 < 1 2 3 4 5 6 7 8 >
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6887795 Method of growing electrical conductors  
This invention relates to manufacturing of integrated circuits (ICs) and especially conductive layers suitable for use in an IC. According to the preferred method a metal oxide thin film is...
6881656 Production process for semiconductor apparatus  
A production process for a semiconductor apparatus is provided in which there is no danger of particle generation, and consequently no danger of associated problems resulting from the presence of...
6875636 Wafer applied thermally conductive interposer  
A thermally conductive film is attached to an integrated circuit (IC) wafer through a number of steps. Initially, a thermally conductive film is positioned on a first side of a block. Next, an IC...
6872646 Method for manufacturing conductive pattern substrate  
A conductive pattern is obtained by forming concave-convex on a substrate by using a pattern substrate. A conductive thin layer is formed and then coated with a layer of a photosensitive resin. The...
6841456 Method of making an icosahedral boride structure  
A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (B 12 P...
6835641 Method of forming single sided conductor and semiconductor device having the same  
A method of forming a single sided conductor and a semiconductor device having the same is provided. The method includes providing a substrate having an opening. The opening exposes a sidewall and...
6818536 Semiconductor device and method of manufacturing the same  
A sidewall oxide layer and a sidewall insulation layer are formed to cover the edge portion of an SOI layer. A channel stopper region is formed in the vicinity of the edge portion of the SOI layer....
6815351 Method for contacting a semiconductor configuration  
A semiconductor configuration with an ohmic contact-connection includes a p-conducting semiconductor region made of silicon carbide. A p-type contact region serves for the contact-connection. The...
6800830 Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication  
A method of fabricating a semiconductor device includes providing a semiconductor substrate, forming an oxide layer in the substrate, and adding nitrogen atoms on top of the exposed surface of the...
6794278 Method for producing organic thin-film device by use of facing-targets-type sputtering apparatus  
Disclosed is a method for forming a thin-film layer, such as a metallic film or a transparent conductive film, on a functional organic layer formed from an organic compound, by means of a...
6787380 Electrically-conductive grid shield for semiconductors  
An electrically-conductive grid placed between an LED and a photodiode prevents false triggers of the photodiode by transient electrical fields. The grid terminates the field but allows light...
6787476 Etch stop layer for etching FinFET gate over a large topography  
A method of forming a gate for a Fin Field Effect Transistor (FinFET) is provided. The method includes forming a first layer of material over a fin and forming a second layer over the first layer....
6787438 Device having one or more contact structures interposed between a pair of electrodes  
A microelectromechanical device is provided which includes a contact structure interposed between a pair of electrodes arranged beneath a beam. In some embodiments, the device may include...
6784102 Laterally interconnecting structures  
A method of increasing mechanical interlocking between a first structure and a second adjacent structure in an integrated circuit. The first structure is formed with a first surface having a first...
6784082 Methods of fabricating single electron transistors in which the thickness of an insulating layer defines spacing between electrodes  
Single-electron transistors include first and second electrodes and an insulating layer between them on a substrate. The insulating layer has a thickness that defines a spacing between the first...
6784031 Method for forming thin films of semiconductor devices  
Methods for forming thin films of semiconductor devices, and more specifically, methods for forming thin films of semiconductor devices, wherein the semiconductor substrate is subjected to a thin...
6784083 Method for reducing physisorption during atomic layer deposition  
The present invention provides a method and apparatus for an atomic layer deposition process. The apparatus includes a chamber adapted to receive a first precursor gas, at least one surface...
6774021 Pattern forming method and pattern forming device  
A pattern forming method has the steps of: forming a pattern by discharging droplets of a conductive material forming solution onto an insulating substrate; forming a conductive layer pattern on...
6770549 Forming patterned thin film metal layers  
The specification describes a pattern transfer technique for forming patterns of thin films of high resolution over large areas. It involves forming a pattern layer on a transfer substrate,...
6764927 Chemical vapor deposition (CVD) method employing wetting pre-treatment  
A chemical vapor deposition (CVD) method for forming a microelectronic layer within a microelectronic product employs a wetting material treatment of a substrate upon which is formed the...
6764931 Semiconductor package, method of manufacturing the same, and semiconductor device  
A wiring layer for serving as a first electrode layer of a capacitor portion patterned in a predetermined shape on an insulative base member is formed. A resin layer for serving as a dielectric...
6764713 Method of processing a wafer using a compliant wafer chuck  
A method of processing a wafer includes placing a wafer atop a wafer chuck, wherein the chuck has a base and an upper body in which the upper body is coupled to the base by a flexible coupling that...
6750125 Semiconductor device and method for manufacturing the same, semiconductor wafer and semiconductor device manufactured thereby  
A semiconductor device comprises a base semiconductor substrate ( 201 ) having an edge area ( 120 ) which surrounds an element forming area ( 110 ), a buried oxide film ( 202 ) provided over the...
6746960 Electronic techniques for analyte detection  
Techniques are used to detect and identify analytes. Techniques are used to fabricate and manufacture sensors to detect analytes. An analyte ( 1810 ) is sensed by sensors ( 1820 ) that output...
6734087 Method for fabricating electrode device  
An electrode device for an electric field emission electron source suitable for duty drive having an element size of 50 μm or smaller and an electrode device fabricating method. A glass film used...
6716744 Ultra thin tungsten metal films used as adhesion promoter between barrier metals and copper  
A method of adhering copper thin film to a substrate in an integrated circuit structure includes preparing a substrate, including forming active regions and trenches for interconnect structures;...
6686263 Selective formation of top memory electrode by electroless formation of conductive materials  
The present invention provides systems and methods that facilitate formation and use of organic memory devices. An electroless plating process is employed that operates at relatively low...
6680216 Method of making imager structure  
In an imager having an array of light-sensitive elements and employing striped common electrodes, exposed edges of preimidized polyimide layers above the light-sensitive imaging elements are sealed...
6670271 Growing a dual damascene structure using a copper seed layer and a damascene resist structure  
The present invention involves a method for fabricating interconnecting lines and vias. According to the invention, copper is grown from a seed layer to substantially fill openings in a two layer...
6664127 Method of manufacturing multi-layer printed wiring board  
In a method of manufacturing multi-layer printed wiring board, an uncured resin sheet is laminated on both surfaces of a printed wiring board having one or more layers, an organic cover film having...
6664633 Alkaline copper plating  
A method for depositing a metal conduction layer in a feature of a substrate is provided. The method includes forming the feature in the substrate, the feature having a width dimension of less than...
6660618 Reverse mask and oxide layer deposition for reduction of vertical capacitance variation in multi-layer metallization systems  
Excessive variation in vertical (i.e., inter-level) capacitance of multi-level metallization semiconductor devices resulting in racing of clock skew circuitry of finished devices, and over-etching...
6649499 Method of varying the resistance along a conductive layer  
A method for varying the resistance along a conductive layer. The method including the step of removing at least a portion of a resistance-altering constituent diffused within the conductive layer.
6649498 Metal film protection of the surface of a structure formed on a semiconductor substrate during etching of the substrate by a KOH etchant  
The present invention concerns the field of microstructures and in particular microstructures made via CMOS technology on semiconductor substrates intended to undergo micro-machining by wet...
6645884 Method of forming a silicon nitride layer on a substrate  
The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing...
6638857 E-beam deposition method and apparatus for providing high purity oxide films  
An e-beam deposition method and apparatus uses a metallic target and localized oxygen ambient to produce an oxide film for deposition. A metallic target is first heated, then exposed to a stream of...
6638877 Ultra-thin SiO2using N2O as the oxidant  
N 2 O is used as the oxidant for forming an ultra-thin oxide ( 14 ). The low oxidation efficiency of N 2 O compared to O 2 allows the oxidation temperature to be raised to greater than 850° C....
6624053 Damascene-type interconnection structure and its production process  
A interconnection structure of the damascene type is produced on a surface of a microelectronic device that includes at least one dielectric material layer for housing at least one interconnection...
6617249 Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method  
A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by...
6613656 Sequential pulse deposition  
A method for growing films on substrates using sequentially pulsed precursors and reactants, system and devices for performing the method, semiconductor devices so produced, and machine readable...
6602796 Chemical vapor deposition for smooth metal films  
A method for growing smooth metal films using a first process phase favorable to nucleation, agglomeration and initiation of smooth metal film growth and a second process phase favorable to...
6602770 Silicon layer to improve plug filling by CVD  
A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. Silane is thermally decomposed so as to deposit a layer of material on the walls of an...
6599820 Method of producing a semiconductor device  
A method of producing a semiconductor device having a polymetal wiring structure fabricated by a polycrystalline silicon film, a reaction preventing film, and a tungsten film comprising steps of...
6589852 Method of replicating alignment marks for semiconductor wafer photolithography  
A method for avoiding a step height over an alignment mark area including providing at least one alignment mark area disposed at a semiconductor wafer process surface periphery said alignment mark...
6573194 Method of growing surface aluminum nitride on aluminum films with low energy barrier  
An integrated circuit having an interconnect layer ( 104 ) that comprises a first barrier layer ( 106 ) and an aluminum-based layer ( 108 ) overlying the first barrier layer ( 106 ). An...
6559051 Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors  
High quality dielectric layers, e.g., high-k dielectric layers comprised of at least one refractory or lanthanum series transition metal oxide or silicate, for use as gate insulator layers in...
6555454 Semiconductor memory device incorporating therein ruthenium electrode and method for the manufacture thereof  
A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, transistors formed on the semiconductor substrate, an insulating layer formed over...
6551932 Method for forming metal line in a semiconductor device  
A method for forming a metal line of a semiconductor device is disclosed, in which a Cu thin film is deposited on a diffusion barrier film after a chemical enhancer and plasma are applied thereon,...
6551912 Method of forming a conductive coating on a semiconductor device  
On a semiconductor die, a conductive layer is formed by first attaching a semiconductor wafer to a support wafer, then cutting the semiconductor wafer into dies, and finally depositing a conductive...
6537901 Method of manufacturing a transistor in a semiconductor device  
There is disclosed a method of manufacturing a transistor in a semiconductor device. The present invention forms a Ta film or a TaNx film at a low temperature or forms a first TaNx film in which...
Matches 151 - 200 out of 381 < 1 2 3 4 5 6 7 8 >