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9035414 Compound semiconductor device and manufacturing method thereof  
A semiconductor device includes a semiconductor layer and a Schottky electrode, a Schottky junction being formed between the semiconductor layer and the Schottky electrode. The Schottky electrode...
9018638 MOSFET device  
A MOSFET device is provided. An N-type epitaxial layer is disposed on an N-type substrate. An insulating trench is disposed in the epitaxial layer. A P-type well region is disposed in the...
9000550 Semiconductor component and method of manufacture  
A semiconductor component having a low resistance conduction path and a method for manufacturing the semiconductor component. When the semiconductor component is a Schottky diode, one or more...
8980732 Method for manufacturing silicon carbide schottky barrier diode  
The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n− epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film...
8969995 Semiconductor device and rectifier system  
High-efficiency Schottky diodes (HED) and rectifier systems having such semiconductor devices are provided, which Schottky diodes (HED) are composed of at least one Schottky diode combined with an...
8969994 Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode by regrowth and etch back  
An MPS diode includes a III-nitride substrate characterized by a first conductivity type and a first dopant concentration and having a first side and a second side. The MPS diode also includes a...
8962461 GaN HEMTs and GaN diodes  
Consistent with an example embodiment, a GaN heterojunction structure has a three-layer dielectric structure. The lowermost and middle portions of the gate electrode together define the gate foot,...
8963275 Resistive-switching device capable of implementing multiary addition operation and method for multiary addition operation  
A resistive-switching random access memory device includes a memory cell disposed between a bit line and a word line, the memory cell having a resistive-switching element (40) and a Schottky diode...
8957494 High-voltage Schottky diode and manufacturing method thereof  
A high-voltage Schottky diode and a manufacturing method thereof are disclosed in the present disclosure. The diode includes: a P-type substrate and two N-type buried layers, a first N-type buried...
8951832 Variable-resistance material memories and methods  
Variable-resistance memory material cells are contacted by vertical bottom spacer electrodes. Variable-resistance material memory spacer cells are contacted along the edge by electrodes. Processes...
8936964 Silicon carbide schottky-barrier diode device and method for manufacturing the same  
The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n−...
8916459 Compound semiconductor device with mesa structure  
A compound semiconductor device having mesa-shaped element region, and excellent characteristics are provided. The compound semiconductor device has: an InP substrate; an epitaxial lamination mesa...
8884395 Schottky diode and method for fabricating the same  
A Schottky diode includes a deep well formed in a substrate, an isolation layer formed in the substrate, a first conductive type guard ring formed in the deep well along an outer sidewall of the...
8872235 Integrated Schottky diode for HEMTs  
An embodiment of a transistor device includes a compound semiconductor material on a semiconductor carrier and a source region and a drain region spaced apart from each other in the compound...
8871621 Method of forming an asymmetric MIMCAP or a schottky device as a selector element for a cross-bar memory array  
MIMCAP devices are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP devices can have lower thermal budget as...
8836071 Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layer  
A method of fabricating a Schottky diode using gallium nitride (GaN) materials includes providing an n-type GaN substrate having a first surface and a second surface. The second surface opposes...
8815716 Method of producing semiconductor device  
A semiconductor device includes a semiconductor layer (1) containing GaN and an electrode. The electrode includes an electrode main body (6), a connection-use electrode (8) containing Al and...
8796808 MOS P-N junction schottky diode device and method for manufacturing the same  
A MOS P-N junction Schottky diode device includes a substrate having a first conductivity type, a field oxide structure defining a trench structure, a gate structure formed in the trench structure...
8772900 Trench Schottky barrier diode and manufacturing method thereof  
The present invention discloses a trench Schottky barrier diode (SBD) and a manufacturing method thereof. The trench SBD includes: an epitaxial layer, formed on a substrate; multiple mesas,...
8766395 Schottky device  
A device includes a Schottky barrier formed by a metal-semiconductor junction between a semiconductor nanowire and a metal contact. The metal contact at least partly encloses a circumferential...
8765523 Method for manufacturing semiconductor device including Schottky electrode  
A method for manufacturing a semiconductor device includes the steps of preparing a substrate made of silicon carbide and having an n type region formed to include a main surface, forming a p type...
8759922 Full silicidation prevention via dual nickel deposition approach  
Semiconductor devices are formed without full silicidation of the gates and with independent adjustment of silicides in the gates and source/drain regions. Embodiments include forming a gate on a...
8749014 Schottky diodes with dual guard ring regions and associated methods  
The present invention discloses a Schottky diode. The Schottky diode comprises a cathode region, an anode region and a guard ring region. The anode region may comprise a metal Schottky contact....
8735861 Semiconductor storage device and method of manufacturing same  
A semiconductor storage device according to an embodiment includes a first conductive layer, a variable resistance layer, an electrode layer, a first liner layer, a stopper layer, and a second...
8735228 Trench isolation MOS P-N junction diode device and method for manufacturing the same  
A trench isolation metal-oxide-semiconductor (MOS) P-N junction diode device and a manufacturing method thereof are provided. The trench isolation MOS P-N junction diode device is a combination of...
8735257 MOS varactor optimized layout and methods  
Apparatus and methods for a MOS varactor structure are disclosed. An apparatus is provided, comprising an active area defined in a portion of a semiconductor substrate; a doped well region in the...
8679954 Schottky barrier diode and method for making the same  
A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC...
8674333 Variable-resistance material memories and methods  
Variable-resistance memory material cells are contacted by vertical bottom spacer electrodes. Variable-resistance material memory spacer cells are contacted along the edge by electrodes. Processes...
8647971 Method of manufacturing junction barrier schottky diode with dual silicides  
An integrated circuit, including a junction barrier Schottky diode, has an N type well, a P-type anode region in the surface of the well, and an N-type Schottky region in the surface of the well...
8604525 Transistor structure with feed-through source-to-substrate contact  
An LDMOS (laterally diffused metal oxide semiconductor) structure connects the source to a substrate and also the gate shield while utilizing a reduced area for such contacts. The structure...
8592293 Schottky barrier diodes for millimeter wave SiGe BiCMOS applications  
A method for forming a Schottky barrier diode on a SiGe BiCMOS wafer, including forming a structure which provides a cutoff frequency (Fc) above about 1.0 THz. In embodiments, the structure which...
8592298 Fabrication of floating guard rings using selective regrowth  
A method for fabricating edge termination structures in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface, forming an n-type GaN...
8581360 Trench schottky diode and manufacturing method thereof  
A trench Schottky diode and a manufacturing method thereof are provided. A plurality of trenches are formed in A semiconductor substrate. A plurality of doped regions are formed in the...
8557644 Method for fabricating a monolithic integrated composite group III-V and group IV semiconductor device  
According to one disclosed embodiment, a monolithic vertically integrated composite device comprises a double sided semiconductor substrate having first and second sides, a group IV semiconductor...
8529776 High lateral to vertical ratio etch process for device manufacturing  
A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the...
8513764 Schottky diode  
A Schottky diode including a semiconductor region, a first terminal comprising a metal or a metal silicide or being metallic, and a second terminal comprising at least a portion of the...
8508015 Schottky-like contact and method of fabrication  
The present invention provides Schottky-like and ohmic contacts comprising metal oxides on zinc oxide substrates and a method of forming such contacts. The metal oxide Schottky-like and ohmic...
8492254 Method of manufacturing semiconductor devices  
A method of manufacturing a semiconductor device is disclosed. The method includes forming a first trench and a second trench in an n-type substrate surface, the first trenches being spaced apart...
8450827 MOS varactor structure and methods  
Apparatus and methods for a MOS varactor structure are disclosed An apparatus is provided, comprising an active area defined in a portion of a semiconductor substrate; a doped well region in the...
8450826 Nitride based semiconductor device  
Disclosed herein is a nitride based semiconductor device. There is provided a nitride based semiconductor device including a base substrate; a semiconductor layer disposed on the base substrate;...
8445368 Semiconductor device and method for manufacturing same  
A semiconductor device includes a trench MOS barrier Schottky diode having an integrated PN diode and a method is for manufacturing same.
8441017 Schottky barrier diode and method for making the same  
A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC...
8435873 Unguarded Schottky barrier diodes with dielectric underetch at silicide interface  
One embodiment of the invention relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends...
8426298 CMOS devices with Schottky source and drain regions  
A semiconductor structure includes a semiconductor substrate, and an NMOS device at a surface of the semiconductor substrate, wherein the NMOS device comprises a Schottky source/drain extension...
8421181 Schottky barrier diode with perimeter capacitance well junction  
A Schottky barrier diode comprises a first-type substrate, a second-type well isolation region on the first-type substrate, and a first-type well region on the second-type well isolation region....
8399875 Nonvolatile memory element, and nonvolatile memory device  
A nonvolatile memory element including a resistance variable element configured to reversibly change between a low-resistance state and a high-resistance state in response to electric signals with...
8395053 Circuit system with circuit element and reference plane  
A circuit system comprising: forming a lower electrode over a substrate; forming a resistive film over the lower electrode; forming a multi-layered insulating stack over a portion of the resistive...
8384181 Schottky diode structure with silicon mesa and junction barrier Schottky wells  
A power diode having a silicon mesa atop the drift region includes a first contact positioned on the silicon mesa. The silicon mesa is highly doped p-type or n-type, and the anode may be formed on...
8377810 Schottky barrier diode and method of forming a Schottky barrier diode  
Disclosed is a silicon-on-insulator-based Schottky barrier diode with a low forward voltage that can be manufactured according to standard SOI process flow. An active silicon island is formed...
8377811 Method for manufacturing silicon carbide semiconductor device  
An object of the invention is to provide a method for manufacturing a silicon carbide semiconductor device having constant characteristics with reduced variations in forward characteristics. The...

Matches 1 - 50 out of 308 1 2 3 4 5 6 7 >