|
Match
|
Document |
Document Title |
|
|
7622785 |
Photoelectric conversion element and manufacturing method of photoelectric conversion element
An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode...
|
|
|
7622320 |
CMOS image sensor and fabricating method thereof
A CMOS image sensor and method of fabricating the same are disclosed. The method comprises forming a plurality of polysilicon patterns on a silicon epitaxial layer which correspond to a plurality...
|
|
|
7622319 |
CMOS image sensor and manufacturing method thereof
A CMOS image sensor includes isolation regions and a photo diode region formed in a substrate, gate electrodes formed on the substrate, impurity injection regions formed in the substrate...
|
|
|
7619675 |
Solid-state image taking apparatus with photoelectric converting and vertical charge transferring sections and method for fabricating the same
A solid-state image pickup apparatus includes one or a plurality of photoelectric converting sections for photoelectric converting incident light into a signal charge on a semiconductor substrate,...
|
|
|
7615396 |
Photodiode stack for photo MOS relay using junction isolation technology
A novel photodiode stack which comprising of more than 3 photodiodes connected in series to produce a large photovoltaic voltage in the presence of light using junction isolation technology.
|
|
|
7615393 |
Methods of forming multi-doped junctions on a substrate
A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron, the substrate including a first substrate surface with a first...
|
|
|
7612393 |
Active photosensitive structure with buried depletion layer
An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes...
|
|
|
7611920 |
Photonic coupling scheme for photodetectors
A room temperature operation polycrystalline infrared responsive photodetector, manufactured by a process, comprising the steps of patterning vacuum-deposited material and dry-etching a photonic...
|
|
|
7610670 |
Method for manufacturing a diaphragm assembly
A diaphragm assembly used for a condenser microphone has a diaphragm made of a resin film including a metallized film on one surface of a supporter ring. The diaphragm is made by a first step of...
|
|
|
7608905 |
Independently addressable interdigitated nanowires
An apparatus has multiple sets of independently addressable interdigitated nanowires. Nanowires of a set are in electrical communication with other nanowires of the same set and are electrically...
|
|
|
7608473 |
Image sensor device and manufacturing method thereof
An image sensor and a manufacturing method thereof are provided. The image sensor includes a plurality of sensors, an inter-layer dielectric layer formed over the sensors, a first inter-metal...
|
|
|
7605437 |
Spin-transfer MRAM structure and methods
A spin-transfer MRAM bit includes a free magnet layer positioned between a pair of spin polarizers, wherein at least one of the spin polarizers comprises an unpinned synthetic antiferromagnet...
|
|
|
7601556 |
Front side electrical contact for photodetector array and method of making same
A photodiode includes a semiconductor having front and backside surfaces and first and second active layers of opposite conductivity, separated by an intrinsic layer. A plurality of isolation...
|
|
|
7598596 |
Methods and apparatus for a dual-metal magnetic shield structure
A shield structure for shielding an electromagnetic-field-susceptible region of a semiconductor component (e.g., a magnetoresistive random access memory, or “MRAM”) includes a stress-relief...
|
|
|
7595519 |
Image sensor and method of manufacturing the same
An image sensor includes a first type semiconductor layer, a second type semiconductor layer and a first type well. The first type semiconductor layer is formed on a semiconductor substrate and...
|
|
|
7595214 |
Solid-state image pickup device and manufacturing method for the same
A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a...
|
|
|
7595212 |
Heat transfer structures
A switching element includes a bubble chamber, a heater and a heat conductor. The bubble chamber holds fluid. The bubble chamber includes a trench within a planar light circuit and includes a...
|
|
|
7595211 |
Method of manufacturing a complementary metal oxide silicon image sensor
A method for manufacturing a CMOS image sensor increases the performance of the CMOS image sensor by reducing a peeling phenomenon near a wafer edge and a preventing a circle defect in a pixel...
|
|
|
7595210 |
Method of manufacturing complementary metal oxide semiconductor image sensor
A method of manufacturing a complementary metal oxide semiconductor (CMOS) image sensor is provided. The method can include the steps of: providing a semiconductor substrate having an active region...
|
|
|
7592540 |
Polymer electrolyte and dye-sensitized solar cell comprising the polymer electrolyte
A polymer electrolyte composition for a dye-sensitized solar cell, a polymer electrolyte, a dye-sensitized solar cell employing the polymer electrolyte, and a method for preparing the same. The...
|
|
|
7592196 |
Method for fabricating a CMOS image sensor
A method for fabricating a CMOS image sensor may include forming an isolation layer defining an active area on a semiconductor substrate, forming first and second gate electrodes in the transistor...
|
|
|
7588957 |
CVD process gas flow, pumping and/or boosting
The present invention generally comprises a method and apparatus for supplemental pumping, gas feed, and/or RF current for a process. When depositing amorphous silicon, the amount of process gases,...
|
|
|
7586169 |
Image sensor and method for manufacturing the same
An image sensor that can include a photodiode formed on one side of a substrate to receive light and then generate signal charges based on the light; and a transistor converting the signal charges...
|
|
|
7582506 |
Precursor containing copper indium and gallium for selenide (sulfide) compound formation
The present invention relates to systems and methods for preparing metallic precursor thin films for the growth of semiconductor compounds to be used for radiation detector and solar cell...
|
|
|
7582501 |
Thin film transistor panel and manufacturing method thereof
A TFT array panel having signal lines of low resistivity is presented. The TFT array panel includes a substrate; a gate line including a gate electrode formed on the substrate and having a...
|
|
|
7582499 |
Photo sensor and a method for manufacturing thereof
A photo sensor has an insulator layer for covering a diode stack, and the insulator layer is made of photoresist to reduce a side leakage current.
|
|
|
7580075 |
Optical device and production method thereof
A lead frame is buried in mold resin to form a mold structure. A wide blade is used to make an indentation having an alignment step in the mold structure. Then, a narrow blade is used to split the...
|
|
|
7579208 |
Image sensor having self-aligned and overlapped photodiode and method of making same
An image sensing device includes a gate dielectric layer formed on a substrate and a transfer gate formed on the gate dielectric layer. A masking layer is formed on the transfer gate, the masking...
|
|
|
7579207 |
Solid-state imaging device, method of producing the same and camera
The prevent invention is to provide a solid-state imaging device having a electrode configuration applicable to a progressive scan, and able to reduce a obstruction of incident light at the...
|
|
|
7572974 |
Gel electrolytes for dye sensitized solar cells
Replacing liquid electrolytes with solid or quasi-solid electrolytes facilitates the production of photovoltaic cells using continuous manufacturing processes, such as roll-to-roll or web...
|
|
|
7572701 |
Recessed gate for a CMOS image sensor
A novel CMOS image sensor cell structure and method of manufacture. The imaging sensor comprises a substrate having an upper surface, a gate comprising a dielectric layer formed on the substrate...
|
|
|
7572665 |
Microelectronics grade metal substrate, related metal-embedded devices and methods for fabricating same
Fabricating a microelectronics grade metal substrate comprises forming the metal substrate on a sacrificial substrate. An adhesion layer can be deposited on or over the surface of the sacrificial...
|
|
|
7572648 |
Method of manufacturing optical sensor
A cubic element of photonic crystal is integrally formed on the surface of a photo-detection element, and a portion of the photonic crystal cubic element is irradiated with ultraviolet rays thereby...
|
|
|
7569403 |
Pattern evaluation method, manufacturing method of semiconductor device, correction method of mask pattern and manufacturing method of exposure mask
A pattern evaluation method using a circuit arrangement provided with N (N is a natural number of 2 or greater) circuit groups having wiring whose widths are different to each other, each circuit...
|
|
|
7563636 |
Method of forming a pixel sensor cell for collecting electrons and holes
The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present...
|
|
|
7563631 |
Reduced barrier photodiode / gate device structure for high efficiency charge transfer and reduced lag and method of formation
A pixel cell having a reduced potential barrier near a region where a gate and a photodiode are in close proximity to one another, and a method for forming the same are disclosed. Embodiments of...
|
|
|
7553690 |
Starved source diffusion for avalanche photodiode
This disclosure is concerned with starved source diffusion methods for forming avalanche photodiodes are provided for controlling an edge effect. In one example, a method for manufacturing an...
|
|
|
7553687 |
Dual seed semiconductor photodetectors
Dual seed semiconductor photodetectors and methods to fabricate thereof are described. A dual seed semiconductor photodetector is formed directly on an insulating layer on a substrate. The dual...
|
|
|
7547573 |
Image sensor and method of manufacturing the same
An image sensor and a method of manufacturing the same, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic...
|
|
|
7547570 |
Method for forming thin film photovoltaic interconnects using self-aligned process
Processing steps that are useful for forming interconnects in a photovoltaic module are described herein. According to one aspect, a method according to the invention includes processing steps that...
|
|
|
7545015 |
Photo-detection device and manufacturing method thereof
A photodetection device is provided that includes a semiconductor substrate having a back surface which serves as a light-incident surface, and a front surface which opposes the back surface and is...
|
|
|
7537957 |
Solid state imaging device and method for manufacturing solid state imaging device
A solid state imaging device and a method for manufacturing the same that prevents the reproduction characteristic of an optical image from being affected by diagonal light on a semiconductor...
|
|
|
7537956 |
Silicon optoelectronic device manufacturing method and silicon optoelectronic device manufactured by thereof and image input and/or output apparatus having the same
A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method and an image input and/or output apparatus having the silicon optoelectronic...
|
|
|
7537955 |
Low temperature nano particle preparation and deposition for phase-controlled compound film formation
The present invention is directed to different methods used in the formation of an ink, as well as being directed to the formation of layers used in the fabrication of a solar cell, particularly...
|
|
|
7534642 |
Methods of manufacturing an image device
In methods of manufacturing an image device, a first structure including a transparent lower portion and an opaque upper portion is formed on a substrate having a photodiode. An etch stop layer...
|
|
|
7531374 |
CMOS image sensor process and structure
A CMOS image sensor (CIS) process is described. A semiconductor substrate is provided, and then a gate dielectric layer, a gate material layer and a thickening layer are sequentially formed on the...
|
|
|
7528695 |
Method to manipulate selectivity of a metal oxide sensor
A method of selectively enhancing the sensitivity of a metal oxide sensor includes fabricating a ZnO sensor having a ZnO sensor element therein; and exposing the ZnO sensor element to a plasma stream.
|
|
|
7528001 |
Method of manufacturing a CMOS image sensor
A complementary metal oxide silicon (CMOS) image sensor includes a pad protection layer having a dual-layer structure including a plasma enhanced-tetra ethyl ortho silicate (PE-TEOS) layer as a...
|
|
|
7527999 |
Cd1−xZnxS high performance TCR material for uncooled microbolometers used in infrared sensors and method of making same
A Cd 1-x Zn x S film material, with a high value of thermal coefficient of resistance, in the range of 1.5% to 3.7%. The Cd 1-x Zn x S material has excellent characteristics for use in a...
|
|
|
7524695 |
Image sensor and pixel having an optimized floating diffusion
An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively...
|