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7545015 |
Photo-detection device and manufacturing method thereof
A photodetection device is provided that includes a semiconductor substrate having a back surface which serves as a light-incident surface, and a front surface which opposes the back surface and is...
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7537955 |
Low temperature nano particle preparation and deposition for phase-controlled compound film formation
The present invention is directed to different methods used in the formation of an ink, as well as being directed to the formation of layers used in the fabrication of a solar cell, particularly...
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7537956 |
Silicon optoelectronic device manufacturing method and silicon optoelectronic device manufactured by thereof and image input and/or output apparatus having the same
A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method and an image input and/or output apparatus having the silicon optoelectronic...
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7537957 |
Solid state imaging device and method for manufacturing solid state imaging device
A solid state imaging device and a method for manufacturing the same that prevents the reproduction characteristic of an optical image from being affected by diagonal light on a semiconductor...
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7534642 |
Methods of manufacturing an image device
In methods of manufacturing an image device, a first structure including a transparent lower portion and an opaque upper portion is formed on a substrate having a photodiode. An etch stop layer...
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7531374 |
CMOS image sensor process and structure
A CMOS image sensor (CIS) process is described. A semiconductor substrate is provided, and then a gate dielectric layer, a gate material layer and a thickening layer are sequentially formed on the...
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7527999 |
Cd1−xZnxS high performance TCR material for uncooled microbolometers used in infrared sensors and method of making same
A Cd 1-x Zn x S film material, with a high value of thermal coefficient of resistance, in the range of 1.5% to 3.7%. The Cd 1-x Zn x S material has excellent characteristics for use in a...
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7528695 |
Method to manipulate selectivity of a metal oxide sensor
A method of selectively enhancing the sensitivity of a metal oxide sensor includes fabricating a ZnO sensor having a ZnO sensor element therein; and exposing the ZnO sensor element to a plasma stream.
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7528001 |
Method of manufacturing a CMOS image sensor
A complementary metal oxide silicon (CMOS) image sensor includes a pad protection layer having a dual-layer structure including a plasma enhanced-tetra ethyl ortho silicate (PE-TEOS) layer as a...
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7524694 |
Funneled light pipe for pixel sensors
A photo sensing structure and methods for forming the same. The structure includes (a) a semiconductor substrate and (b) a photo collection region on the semiconductor substrate. The structure also...
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7524695 |
Image sensor and pixel having an optimized floating diffusion
An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively...
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7521278 |
Isolation method for low dark current imager
A method for forming the passivation layer for silicon-isolation interface between photosensitive regions of an image sensor, the method includes providing a substrate having a plurality of spaced...
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7521277 |
Method for manufacturing semiconductor device with low temperature dopant activation
A doped region in a semiconductor substrate is activated by irradiation of electromagnetic waves having a main spectrum peak at a wavelength of 1.1 μm or less. The efficiency of electromagnetic...
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7521783 |
Ultra thin image sensor package structure and method for fabrication
An image sensor package having at least one chip supporting bar secured to a top surface of an image sensor chip. The thickness of the chip supporting bar is absorbed within a vertical dimension of...
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7517714 |
Image sensors for reducing dark current and methods of fabricating the same
An image sensor includes a semiconductor substrate of a first conductivity type, a photodiode of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the...
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7517715 |
CMOS image sensor and method of fabricating the same
A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a...
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7517713 |
Solid-state image sensor and method for manufacturing thereof as well as semiconductor device and method for manufacturing thereof
A solid-state image sensor and a method for manufacturing thereof and a semiconductor device and a method for manufacturing thereof are provided. A semiconductor substrate is made to be the thin...
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7517717 |
Wide dynamic range sensor having a pinned diode with multiple pinned voltages
A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional...
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7510896 |
CMOS image sensor and method for manufacturing the same
Disclosed are a CMOS image sensor and a method for manufacturing the same, capable of improving the characteristics of the image sensor by increasing junction capacitance of a floating diffusion...
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7510897 |
Photodiode with self-aligned implants for high quantum efficiency and method of formation
A pinned photodiode with a pinned surface layer formed by a self-aligned angled implant is disclosed. The angle of the implant may be tailored to provide an adequate offset between the pinned...
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7510899 |
Methods for fabricating a CMOS image sensor
A method for fabricating a CMOS image sensor includes providing a substrate having a sensor array region and a peripheral region defined thereon, forming at least a contact pad on the substrate of...
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7510898 |
Method of manufacturing image display device and method of dividing device
A manufacturing method of manufacturing an image display device having a wiring and a display element electrically connected to the wiring, comprising a step of dividing a device having the wiring...
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7507595 |
CMOS image sensor and method for fabricating the same
A CMOS image sensor and fabricating method can reduce leakage current of a photodiode reduced by configuring a triangular shape of a photodiode area to minimize an interface contacting the STI or...
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7504279 |
Method for producing semi-conducting devices and devices obtained with this method
A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the...
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7504278 |
Image sensor and method for manufacturing the same
An image sensor is disclosed where individual photo diodes of the respective unit cells separated by an element isolating layer are physically integrated into a single large scale pixel formed...
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7504277 |
Method for fabricating a high performance PIN focal plane structure using three handle wafers
The present invention concerns, in part, a method for fabricating a silicon PIN detector component wherein three handle wafers are bonded to the wafer at varying points in the fabrication process....
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7501305 |
Method for forming deposited film and photovoltaic element
A method for forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD includes forming a deposited film containing microcrystalline silicon on a...
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7501304 |
Method of cleaning cover glass having spacer
The present invention provides a method of cleaning a cover glass having a spacer which is to be incorporated in a solid image pickup device, comprising: a dry cleaning step performed after dry...
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7501303 |
Reflective layer buried in silicon and method of fabrication
A silicon wafer having a distributed Bragg reflector buried within it. The buried reflector provides a high efficiency, readily and accurately manufactured reflector with a body of silicon. A...
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7498190 |
Method for fabricating a CMOS image sensor
A method for fabricating a CMOS image sensor is disclosed. First, a substrate having a sensor array region and a peripheral region is provided. A contact pad is formed on the substrate of the...
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7498189 |
Method of producing a radiation detector with a polysilicon converting layer
In a method of producing a radiation detector, an active matrix board is formed to include gate lines and data lines arranged in a two-dimensional lattice shape, a plurality of high-speed switching...
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7494840 |
Optical device with IrOx nanostructure electrode neural interface
An optical device with an iridium oxide (IrOx) electrode neural interface, and a corresponding fabrication method are provided. The method provides a substrate and forms a first conductive...
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7494838 |
Manufacturing method for magnetic sensor and lead frame therefor
A magnetic sensor is constituted using magnetic sensor chips mounted on stages supported by interconnecting members and a frame having leads in a lead frame. Herein, the stages are inclined upon...
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7485554 |
Method of increasing a free carrier concentration in a semiconductor substrate
A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a...
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7482195 |
High mobility high efficiency organic films based on pure organic materials
A method of purifying small molecule organic material, performed as a series of operations beginning with a first sample of the organic small molecule material. The first step is to purify the...
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7479403 |
Pinned photodiode integrated with trench isolation and fabrication method
A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the...
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7476560 |
Photoelectric conversion device, and process for its fabrication
In a photoelectric conversion device comprising a photoelectric-conversion section and a peripheral circuit section where signals sent from the photoelectric-conversion section are processed, the...
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7469461 |
Method for making a diaphragm unit of a condenser microphone
A method for making a diaphragm unit of a condenser microphone includes the steps of: forming a liftoff layer on a substrate; forming an insulator diaphragm film on the liftoff layer; and removing...
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7470560 |
Image sensor having a charge storage region provided within an implant region
A deep implanted region of a first conductivity type located below a transistor array of a pixel sensor cell and adjacent a doped region of a second conductivity type of a photodiode of the pixel...
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7470558 |
Method for manufacturing solid-state imaging device, and solid-state imaging device
A method for manufacturing a solid-state imaging device, comprising: a step of forming an imaging portion comprising a photoelectric conversion portion and a charge transfer portion that transfers...
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7465602 |
Anti-blooming storage pixel
Embodiments of the present invention provide pixel cells with increased storage capacity, which are capable of anti-blooming operations. In an exemplary embodiment a pixel cell has an electronic...
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7465592 |
Method of making vertical structure semiconductor devices including forming hard and soft copper layers
The invention provides a reliable way to fabricate a new vertical structure compound semiconductor device with improved light output and a laser lift-off processes for mass production of GaN-based...
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7462507 |
Structure of a CMOS image sensor and method for fabricating the same
An image sensor device and method for forming the same include a photodiode formed in a substrate, at least one electrical interconnection line electrically associated with the photodiode, a light...
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7462897 |
Light emitting device and electronic device
The invention is made in view of solving problems in reduction in yield and an aperture ratio in accordance with an increase in the number of transistors which form a pixel, increase in power...
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7456082 |
Method for producing silicon single crystal and silicon single crystal
In a method for producing a silicon single by pulling the silicon single crystal from a silicon melt contained in a crucible, a magnetic field is applied to the silicon melt in a radial direction...
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7452744 |
Method of manufacturing solid image pickup apparatus
A first gate electrode and a second gate electrode are formed on a semiconductor substrate, and then a resist pattern is formed so as to selectively leave open a portion including an overlap...
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7452742 |
Solid-state imaging device, camera and method of producing the solid-state imaging device
To provide a back-illuminated solid-state imaging device able to suppress a crystal defect caused by a metal contamination in a process and to suppress a dark current to improve quantum efficiency,...
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7452743 |
Microelectronic imaging units and methods of manufacturing microelectronic imaging units at the wafer level
Microelectronic imaging units and methods for manufacturing a plurality of imaging units at the wafer level are disclosed herein. In one embodiment, a method for manufacturing a plurality of...
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7449357 |
Method for fabricating image sensor using wafer back grinding
Provided is a method for fabricating an image sensor using a wafer back grinding process. The method includes: forming a microlens protection layer over a substrate structure including a light...
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7445951 |
Trench photosensor for a CMOS imager
A trench photosensor for use in a CMOS imager having an improved charge capacity. The trench photosensor may be either a photogate or photodiode structure. The trench shape of the photosensor...
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