|
Match
|
Document |
Document Title |
|
|
4608452 |
Lithium counterdoped silicon solar cell
The resistance to radiation damage of an n + p boron doped silicon solar cell is improved by lithium counterdoping. Even though lithium is an n-dopant in silicon, the lithium is introduced in...
|
|
|
4596605 |
Fabrication process of static induction transistor and solid-state image sensor device
In a process for fabricating a static induction transistor having a gate region which is formed in a semiconductor layer including a channel region, ions of an impurity element are implanted into...
|
|
|
4574039 |
Photocorrosion resistant semiconductor photoelectrodes
A semiconductor photoelectrode resistant to photocorrosion and a method of preparing such a photoelectrode are disclosed. The photoelectrode includes a doped oxide layer on which illumination falls...
|
|
|
4557037 |
Method of fabricating solar cells
A solar cell fabrication procedure is described in which a hydrogen ion passivation step is used to form, inter alia, an altered silicon substrate surface layer to which immersion plated nickel...
|
|
|
4555586 |
Photovoltiac device having long term energy conversion stability and method of producing same
A photoresponsive device characterized by the capability of having photoinduced defects annealed out of the photoactive region thereof in a low temperature process. Low temperature annealability is...
|
|
|
4547958 |
VMJ Solar cell fabrication process using mask aligner
A novel method and device for accurately aligning a substrate comprising a silicon wafer in the fabrication of a silicon vertical junction solar cell are described which comprise a base plate...
|
|
|
4536946 |
Method for fabricating semiconductor photodetector
A semiconductor photodetector, and a process for producing a semiconductor photodetector, having a shielding gate region isolated from drain or source regions with only a small junction capacitance...
|
|
|
4522657 |
Low temperature process for annealing shallow implanted N+/P junctions
Disclosed is a low temperature technique for annealing implantation damage and activating dopants. Conventional furnace annealing requires temperatures as high as 1000° to 1100° C. to completely...
|
|
|
4478879 |
Screen printed interdigitated back contact solar cell
Interdigitated back contact solar cells are made by screen printing dopant materials onto the back surface of a semiconductor substrate in a pair of interdigitated patterns. These dopant materials...
|
|
|
4442592 |
Passivated semiconductor pn junction of high electric strength and process for the production thereof
A passivated semiconductor pn junction is provided which has a high electric strength, one area being heavily doped and being very thin, in particular for radiation detectors. The pn junction has...
|
|
|
4411728 |
Method for manufacture of interdigital periodic structure device
In the manufacture of a superlattice by the MBE method, growth of an epitaxial film on a growth substrate is accomplished by disposing a P-type and an N-type impurity evaporation source at...
|
|
|
4382099 |
Dopant predeposition from high pressure plasma source
A method is provided for predepositing dopant material on semiconductor substrates. The semiconductor substrates are positioned within a high pressure plasma reactor apparatus. A high pressure rf...
|
|
|
4377901 |
Method of manufacturing solar cells
A method of manufacturing solar cells in a semiconductor wafer uses a first doped glassy layer which is spaced apart from the edges of the wafer, in combination with a second undoped glassy layer,...
|
|
|
4370175 |
Method of annealing implanted semiconductors by lasers
A high power excimer laser emits a pulsed output at a high repetition rate in the ultraviolet wavelength region and a uniform power output across the laser beam. By subjecting doped silicon wafers...
|
|
|
4349691 |
Method of making constant voltage solar cell and product formed thereby utilizing low-temperature aluminum diffusion
A method of making a silicon solar energy cell having a substantially constant voltage despite significant increases in illumination, in which the back surface junction of the cell is formed by...
|
|
|
4338481 |
Very thin silicon wafer base solar cell
The performance and ruggedness of very thin silicon back surface field (BSF) solar cells are improved by the formation of a relatively thick, epitaxially grown, highly doped layer at the back of...
|
|
|
4322571 |
Solar cells and methods for manufacture thereof
An improved light transducer such as a solar cell and, especially, a concentrator solar cell, together with processes for forming the same which permit the formation of improved light transducers...
|
|
|
4320247 |
Solar cell having multiple p-n junctions and process for producing same
A solar cell with improved energy conversion characteristics is formed from ordinary Czochralski or other types of silicon crystals that are sliced parallel to the growth axis or pulling direction....
|
|
|
4244759 |
Method of improving the linearity of a double-face lateral photo detector for position determining purposes
A method of improving the linearity of a photo detector of the kind comprising a semiconductor wafer, two resistive layers, each one covering one side of said wafer, a p-n junction separating said...
|
|
|
4214920 |
Method for producing solar cell-grade silicon from rice hulls
The present invention relates to the production of high purity solar grade silicon from common rice hulls. A unique process for material purification and reduction includes leaching the rice hulls...
|
|
|
4199377 |
Solar cell
A solar cell including a dielectric isolation member to electrically isolate an active region of the cell from the unfinished edge thereof and to protect the p-n junction from surface contaminants....
|
|
|
4162177 |
Method of forming solar cell with discontinuous junction
A silicon solar energy cell having a substantially constant voltage despite significant increases in illumination, which cell has a back surface junction that is discontinuous and has spaced,...
|
|
|
4155781 |
Method of manufacturing solar cells, utilizing single-crystal whisker growth
A solar cell with semiconductor body consisting of single crystal semiconductor whiskers which are grown on a substrate surface permitting relatively inexpensive manufacture and high efficiency of...
|
|
|
4144094 |
Radiation responsive current generating cell and method of forming same
A semiconductor cell for generating current in response to incident radiation, particularly solar energy, wherein a layer of material having charges is disposed over the PN current generating...
|
|
|
4140610 |
Method of producing a PN junction type solar battery
A PN junction type solar battery comprising a plurality of alternate P-type and N-type semiconductor layers provided in a laminated manner parallel to an incident-light-receiving plane, connection...
|
|
|
4137095 |
Constant voltage solar cell and method of making same
A silicon solar energy cell producing electricity at substantially constant voltage despite significant increases in illumination, in which the back surface junction of the cell is formed by...
|
|
|
4104091 |
Application of semiconductor diffusants to solar cells by screen printing
Diffusants are applied onto semiconductor solar cell substrates using screen printing techniques. The method is applicable to square and rectangular cells and can be used to apply dopants of...
|
|
|
4099986 |
Solar cell comprising semiconductive whiskers
A solar cell with semiconductor body consisting of single crystal semiconductor whiskers which are grown on a substrate surface permitting relatively inexpensive manufacture and high efficiency of...
|
|
|
4062102 |
Process for manufacturing a solar cell from a reject semiconductor wafer
A process for manufacturing a solar cell from a reject semiconductor wafer comprising stripping all external layers from the wafer, etching the surfaces of the wafer so as to effectively remove all...
|
|
|
4053326 |
Photovoltaic cell
A photovoltaic cell includes a metal support which is coated with a metal having a low melting point on which a crystalline layer of a semiconductive material is deposited, the material being doped...
|
|
|
4046609 |
Method of manufacturing photo-diodes utilizing sequential diffusion
A method of manufacturing a diode comprising a semiconductor body including at least first and second adjoining regions of the same conductivity type. The first region includes the diode junction...
|
|
|
4044372 |
Photovoltaic cell having controllable spectral response
The spectral response of a photovoltaic cell is controlled by modifying the minority carrier transport characteristics of the cell semiconductor body. Recombination centers are provided in the body...
|
|
|
4009058 |
Method of fabricating large area, high voltage PIN photodiode devices
The body of a PIN photodiode is of a silicon semiconductor material. The PIN photodiode has a large area incident surface on which light impinges and is operated at high voltages. In the...
|
|
|
3990914 |
Tubular solar cell
High efficiency, low cost solar energy conversion is facilitated by using tubular photovoltaic solar cells situated at the focus of a line-generated paraboloidal reflector. Advantageously, each...
|
|
|
3985579 |
Rib and channel vertical multijunction solar cell
A vertical multijunction solar cell fabricated with the junction channels perpendicular to a ribbed electrical grid structure provides an improved vertical multijunction solar cell having increased...
|
|
|
3978509 |
Photosensitive semiconductor device
A semiconductor device having a photosensitive semiconductor element, for example a photoresistor, having a photosensitive layer of high-ohmic material, preferably gold-compensated silicon, which...
|
|
|
3970843 |
Photosensitive junction devices having controllable sensitivity
The present invention relates to photosensitive device comprising a plurality of superposed semiconductive layers, wherein grooves are hollowed on the face exposed to the irradiance in order to...
|
|
|
3969746 |
Vertical multijunction solar cell
Disclosed is a method of fabricating a vertical multi-junction cell and the solar cell produced thereby, utilizing an orientation dependent etch to selectively provide parallel grooves in...
|
|
|
3966470 |
Photo-conductive coating containing Ge, S, and Pb or Sn
As a photoconductive material there is provided a carrier having a coating thereon of a germanium-sulphur-lead alloy or a germanium-sulphur-tin alloy.
|
|
|
3905836 |
Photoelectric semiconductor devices
In a method of making p-n junction photoelectric semiconductor device from a semiconductor body, the step of producing recombination centers in the interior of the body, whereby the maximum...
|
|
|
3794891 |
HIGH SPEED RESPONSE PHOTOTRANSISTOR AND METHOD OF MAKING THE SAME
A high speed response phototransistor comprises a plurality of pairs of base layers and emitter layers formed with progressive diffusions on a common collector, and an emitter electrode which...
|
|
|
3767494 |
METHOD FOR MANUFACTURING A SEMICONDUCTOR PHOTOSENSITIVE DEVICE
A method for manufacturing thin semiconductor photosensitive devices having a flat surface comprising the steps depositing a high resistivity silicon epitaxial growth layer on a low resistivity...
|
|
|
3747203 |
METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE
A method of implanting atoms of an element in a semiconductor body to change properties associated with the body, in which a layer comprising the element is provided on the body and bombarded with...
|
|
|
3729645 |
PHOTOCONDUCTIVE CAMERA TUBES AND METHODS OF MANUFACTURE
The present invention is directed to a very thin photoconductive camera tube target formed of extrinsic semiconductor material. The resulting target has an enhanced contrast and signal-to-noise ratio.
|
|
|
3674712 |
PHOTOCONDUCTIVE DETECTOR MATERIAL
A photoconductive infrared detector for operation at liquid neon temperatures is disclosed which comprises a semiconductor material consisting essentially of a single crystal of germanium having...
|
|
|
3615855 |
RADIANT ENERGY PHOTOVOLTALIC DEVICE
A radiant energy conversion device which comprises a silicon slice, a silicon-to-germanium transitional region of a first conductivity type, a germanium layer of a second conductivity type and a...
|
|
|
3615856 |
GERMANIUM-TIN ALLOY INFRARED DETECTOR
An infrared radiation detector useful at room temperature includes an epitaxial, germanium-tin alloy grown by liquid phase epitaxy with a concentration of tin greater than 2.5 atomic percent.
|
|
|
3542608 |
METHOD FOR STIMULATING THE DRIFT OF LITHIUM THROUGH GERMANIUM CRYSTALS
|
|
|
3496029 |
PROCESS OF DOPING SEMICONDUCTOR WITH ANALYZING MAGNET
|
|
|
3471924 |
PROCESS FOR MANUFACTURING INEXPENSIVE SEMICONDUCTOR DEVICES
|