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8076228 |
Low noise transistor and method of making same
A low noise transistor and a method of making a low noise transistor. A noise-reducing agent is introduced into the gate electrode and then moved into the gate dielectric of a transistor.
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8071451 |
Method of doping semiconductors
A method of doping a semiconductor body is provided herein. In one embodiment, a semiconductor body is exposed to an activated hydrogen gas for a predetermined time period and temperature. The...
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8017510 |
Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same
An element isolation region for electrically isolating an element region where an element is to be formed is formed in a semiconductor substrate. A gate insulating film is formed on the...
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7998842 |
Atomic layer deposition metallic contacts, gates and diffusion barriers
The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention...
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7935591 |
Method for fabricating PMOS transistor and method for forming dual gate using the same
Provided are a method for fabricating a PMOS transistor and a method for forming a dual gate of a semiconductor device using the same. The method for fabricating a PMOS transistor includes forming...
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7867551 |
Processing method for group IBIIIAVIA semiconductor layer growth
A method of forming a doped Group IBIIIAVIA absorber layer for solar cells by reacting a partially reacted precursor layer with a dopant structure. The precursor layer including Group IB, Group...
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7858462 |
Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device including an NMOS transistor and a PMOS transistor is provided. The method includes: forming a silicon layer over a substrate through a gate...
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7811916 |
Method for isotropic doping of a non-planar surface exposed in a void
A method is described for isotropic or nearly isotropic shallow doping of a non-planar surface exposed in a void. The results of ion implantation, a common doping method, are inherently planar....
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7763530 |
Doping of particulate semiconductor materials
The invention relates to a method of doping semiconductor material. Essentially, the method comprises mixing a quantity of particulate semiconductor material with an ionic salt or a preparation of...
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7682954 |
Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method
An impurity region having a box-shaped impurity profile is formed. An impurity introducing method includes a step of introducing a desired impurity into a surface of a solid base body, and a step...
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7507649 |
Method for electrical doping a semiconductor material with Cesium
The invention relates to a method for doping a semiconductor material with Cesium, wherein said semiconductor material is exposed to a cesium vapor. Said Cesium vapor is provided by Cesium...
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7507642 |
Vapor-phase growth method, semiconductor manufacturing method and semiconductor device manufacturing method
In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing...
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7482286 |
Method for forming dielectric or metallic films
Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and...
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7329595 |
Deposition of carbon-containing layers using vitreous carbon source
An effusion source comprises a vitreous C filament and a heater to increase the temperature of the filament to produce a C vapor. Also described is a deposition method comprising (a) depositing a...
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7144751 |
Back-contact solar cells and methods for fabrication
Methods for fabrication of emitter wrap through (EWT) back-contact solar cells and cells made by such methods. Certain methods provide for higher concentration of dopant in conductive vias compared...
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6943097 |
Atomic layer deposition of metallic contacts, gates and diffusion barriers
The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention...
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6844259 |
Method for forming contact plug in semiconductor device
The present invention provides a method for forming a contact plug in a semiconductor device capable of preventing an increase of contact resistance even if the contact size becomes smaller and...
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6825104 |
Semiconductor device with selectively diffused regions
The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate in the shape of a slice, the method comprising the steps of: step 1)...
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6821871 |
Method for manufacturing semiconductor device, substrate treatment method, and semiconductor manufacturing apparatus
It is an object of the present invention to make it easy to diffuse phosphorus into a silicon film and allow the phosphorus diffusion concentration to be easily controlled by varying the timing at...
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6770500 |
Process of passivating a metal-gated complementary metal oxide semiconductor
A process of passivating a metal-gated CMOS structure in which a metal-gated CMOS structure is passivated in an atmosphere of molecular hydrogen at a temperature of between about 250° C. and about ...
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6632721 |
Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains
In a method of manufacturing a semiconductor integrated circuit device in which a lower electrode of a capacitor is composed of a polycrystalline silicon film having a surface area increased by...
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6555452 |
Method for growing p-type III-V compound material utilizing HVPE techniques
A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate...
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6555451 |
Method for making shallow diffusion junctions in semiconductors using elemental doping
A method is provided for making ultra-shallow diffused junctions using an elemental dopant. A semiconductor wafer is cleaned for providing a clean reaction surface. The cleaned wafer in loaded onto...
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6461947 |
Photovoltaic device and making of the same
To form an impurity diffusion layer on only one side of a semiconductor substrate at least one semiconductor substrate and at least one diffusion protecting plate are put close to each other and a...
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6417099 |
Method for controlling dopant diffusion in a plug-shaped doped polysilicon layer on a semiconductor wafer
The present invention provides a method for controlling dopant density of a plug-shaped doped polysilicon layer formed within a plug-shaped recess to prevent the dopant contained in the plug-shaped...
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6413844 |
Safe arsenic gas phase doping
A method is described for safe gas phase doping a semiconductor with arsenic. The substrate including a semiconductor structure is exposed to arsine at elevated temperatures within a reaction...
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6403455 |
Methods of fabricating a memory device
Various methods of fabricating circuit devices are provided. In one aspect, a method of fabricating a circuit device on a substrate is provided. The method includes forming a doped silicon...
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6348397 |
Method for diffusion of an impurity into a semiconductor wafer with high in-plane diffusion uniformity
The present invention provides an apparatus for diffusing an impurity into a semiconductor wafer comprising: a diffusion furnace tube which has a longitudinal center axis extending along a vertical...
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6339015 |
Method of fabricating a non-volatile semiconductor device
A non-volatile random access memory (NVRAM) cell and methods of forming thereof are disclosed. The NVRAM cell includes a substrate having source and drain regions. A spike having a sharp tip...
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6331477 |
Doping of spherical semiconductors during non-contact processing in the liquid state
A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and a dopant. The semiconductor spheres are heated to a molten state. The dopant is...
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6313004 |
Method for manufacturing semiconductor devices
After HSG-Si 15a is formed on the surface of a polycrystal silicon film 15, heat treatment is conducted on it using a phosphorus diffusion apparatus in an atmosphere of a mixture gas containing...
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6303393 |
Method of doping barium titanate ferroelectric oxide
Optical waveguides exhibiting non-linear and/or electro-optic properties comprise a rare earth doped barium titanate thin film as an optical working medium. The thin film is metalorganic chemical...
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6300228 |
Multiple precipitation doping process
A multiple precipitation doping process for doping a semiconductor substrate (30) starts with forming an amorphous region (32) in the substrate (30). Through multiple laser exposures, multiple...
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6284632 |
Method for manufacturing semiconductor device with stagnated process gas
According to the present invention, a process of the present invention is performed with stagnated process gas in a chamber. The process comprises the steps of supplying process gas into a chamber,...
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6225166 |
Method of manufacturing electrostatic discharge protective circuit
A method of manufacturing an electrostatic discharge protective circuit. A substrate having an inner circuit region and an electrostatic discharge protective circuit is provided. The inner circuit...
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6221747 |
Method of fabricating a conductive plug with a low junction resistance in an integrated circuit
An integrated circuit (IC) fabrication method is provided for fabricating a conductive plug, such as a contact plug or a via plug, with a low junction resistance in an integrated circuit. This...
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6197653 |
Capacitor and memory structure and method
A rugged polysilicon electrode for a capacitor has high surface area enhancement with a thin layer by high nucleation density plus gas phase doping which also enhances grain shape and oxygen-free...
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6191014 |
Method for manufacturing compound semiconductor
Provided is a manufacturing method of a compound semiconductor having at least one layer of carbon-doped p-type semiconductor epitaxial layer by a MOVPE process, wherein carbon trichloride bromide...
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6143632 |
Deuterium doping for hot carrier reliability improvement
A semiconductor device having reduced hot carrier degradation is achieved by doping the semiconductor substrate and gate oxide with deuterium. A conventional semiconductor device is formed with...
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6129950 |
Method of forming a thick polysilicon layer
An apparatus and a method of forming a thick polysilicon layer are provided. An additional pipeline is introduced into a chamber that is used for depositing polysilicon layers. A thin silicon...
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6110276 |
Method for making n-type semiconductor diamond
A method for making n-type semiconducting diamond by use of CVD in which n-type impurities are doped simultaneously with the deposition of diamond. As the n-type impurities, an Li compound and a B...
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6083833 |
Method for forming conductive film for semiconductor device
A method for forming a conductive film for a semiconductor device wherein a conductive film is formed on each wafer loaded in a boat of a vertical furnace of a low pressure chemical vapor...
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6048782 |
Method for doped shallow junction formation using direct gas-phase doping
Halides of a dopant species may be used as a dopant gas source to form shallow doped junctions using a direct gas-phase doping (GPD) process. These halides can also be combined with a carrier gas....
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6040236 |
Method for manufacturing silicon thin film conductive element
In a silicon conductor doped with an impurity of 100 nm or less thick, a method is provided for manufacturing a silicon thin film conductive element which can prevent the increase of resistance...
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6040019 |
Method of selectively annealing damaged doped regions
A method of forming a region of impurity in a semiconductor substrate with minimal damage. The method includes the steps of: forming a reaction-inhibiting impurity region in the semiconductor...
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6025208 |
Method of making electrical elements on the sidewalls of micromechanical structures
A method of forming electrical elements on the sidewalls of deformable micromechanical structures such as flexible, high aspect ratio beams. The micromechanical structure is made of a semiconductor...
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5882991 |
Approaches for shallow junction formation
A method for forming shallow junctions using rapid thermal gas-phase doping (RTGPD). A wafer (26) is placed in a process chamber (14). After evacuating the chamber, a dopant gas combined with a...
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5874352 |
Method of producing MIS transistors having a gate electrode of matched conductivity type
A method of producing an MIS transistor by preparing a substrate formed with a gate electrode and a semiconductor layer which defines a source region and a drain region, removing a natural oxide...
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5798280 |
Process for doping hemispherical grain silicon
A process for doping hemispherical grain silicon is provided and includes the steps of providing hemispherical grain silicon and a source of a dopant material and exposing the hemispherical grain...
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5733815 |
Process for fabricating intrinsic layer and applications
A method of simultaneously forming a gallium arsenide p-i-n structure having p, i, and n regions, which includes heating to dissolve gallium arsenide in a solvent such as bismuth or gallium to form...
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