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9040400 Air-stable n-channel organic electronic devices  
In connection with various example embodiments, an organic electronic device is provided with an organic material that is susceptible to decreased mobility due to the trapping of electron charge...
9041157 Method for doping an electrically actuated device  
An electrically actuated device comprises an active region disposed between a first electrode and a second electrode, a substantially nonrandom distribution of dopant initiators at an interface...
9029226 Mechanisms for doping lightly-doped-drain (LDD) regions of finFET devices  
The embodiments of mechanisms for doping lightly doped drain (LDD) regions by driving dopants from highly doped source and drain regions by annealing for finFET devices are provided. The...
9018083 Electrically actuated device and method of controlling the formation of dopants therein  
In an example of a method for controlling the formation of dopants in an electrically actuated device, a predetermined concentration of a dopant initiator is selected. The predetermined amount of...
8981357 Doped graphene structure comprising hydrophobic organic material, method for preparing the same, and transparent electrode, display device and solar cell comprising the electrode  
A hydrophobic organic layer may be formed on a surface of a graphene doped with a dopant to improve stability of the doped graphene with respect to moisture and temperature. Thus, the transparent...
8975170 Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions  
Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition...
8962444 Semiconductor device and method of manufacturing the same  
Methods of manufacturing a semiconductor device are provided. The method includes forming a poly-silicon layer doped with first p-type dopants on a substrate, etching the poly-silicon layer and...
8962460 Methods of selectively forming metal-doped chalcogenide materials, methods of selectively doping chalcogenide materials, and methods of forming semiconductor device structures including same  
Methods of selectively forming a metal-doped chalcogenide material comprise exposing a chalcogenide material to a transition metal solution, and incorporating transition metal of the transition...
8962459 Diffusion sources from liquid precursors  
A method selectively diffuses dopants into a substrate wafer. The method comprises blanket depositing a doped liquid precursor including dopants on a surface of the substrate wafer to create a...
8946068 Patterned doping of semiconductor substrates using photosensitive monolayers  
A semiconductor device and a method of fabricating a semiconductor device are disclosed. Embodiments of the invention use a photosensitive self-assembled monolayer to pattern the surface of a...
8912083 Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes  
The use of doped silicon nanoparticle inks and other liquid dopant sources can provide suitable dopant sources for driving dopant elements into a crystalline silicon substrate using a thermal...
8901010 Methods for improving solar cell lifetime and efficiency  
Methods for protecting a texturized region and a lightly doped diffusion region of a solar cell to improve solar cell lifetime and efficiency are disclosed. In an embodiment, an example method...
8900962 Method for manufacturing semiconductor device  
According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include forming a base region and an emitter region in a front surface of a...
8895420 Method of fabricating a device with a concentration gradient and the corresponding device  
A semiconductive device is fabricated by forming, within a semiconductive substrate, at least one continuous region formed of a material having a non-uniform composition in a direction...
8895348 Methods of forming a high efficiency solar cell with a localized back surface field  
A solar cell, comprising: a doped silicon substrate, the silicon substrate comprising a front surface and a rear surface; a front phosphorous diffusion layer formed on the front surface; a front...
8859352 Lightly-doped drains (LDD) of image sensor transistors using selective epitaxy  
Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating...
8858843 High fidelity doping paste and methods thereof  
A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.
8853438 Formulations of solutions and processes for forming a substrate including an arsenic dopant  
Formulations of solutions and processes are described to form a substrate including a dopant. In particular implementations, the dopant may include arsenic (As). In an embodiment, a dopant...
8846512 Incorporating impurities using a mask  
Methods of incorporating impurities into materials can be useful in non-volatile memory devices as well as other integrated circuit devices. Various embodiments provide for incorporating...
8846508 Method of implanting high aspect ratio features  
Methods to implant ions into the sidewall of a three dimensional high aspect ratio feature, such as a trench or via, are disclosed. The methods utilize a phenomenon known as knock-in, which causes...
8835290 Methods and compositions for doping silicon substrates with molecular monolayers  
Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing...
8828817 Semiconductor device and method of forming the same  
A method of forming a semiconductor device includes performing a first pre-amorphous implantation process on a substrate, where the substrate has a gate stack. The method further includes forming...
8828776 Diffusion furnaces employing ultra low mass transport systems and methods of wafer rapid diffusion processing  
Multi-zone, solar cell diffusion furnaces having a plurality of radiant element (SiC) or/and high intensity IR lamp heated process zones, including baffle, ramp-up, firing, soaking and cooling...
8822318 Doping of semiconductor substrate through carbonless phosphorous-containing layer  
A method and system are disclosed for doping a semiconductor substrate. In one embodiment, the method comprises forming a carbon free layer of phosphoric acid on a semiconductor substrate, and...
8816503 Semiconductor device with buried electrode  
A semiconductor device with a buried electrode is manufactured by forming a cavity within a semiconductor substrate, forming an active device region in an epitaxial layer disposed on the...
8815722 Methods of forming integrated circuits  
A method of forming an integrated circuit includes forming a gate structure over a substrate. At least one silicon-containing layer is formed in source/drain (S/D) regions adjacent to sidewalls of...
8815723 Process for enhancing image quality of backside illuminated image sensor  
A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also...
8796093 Doping of FinFET structures  
A FinFET structure is fabricated using a process that facilitates the effective doping of fin structures. A doped layer is annealed to drive dopants into the fins. The doped layer is removed...
8765617 Method of manufacturing semiconductor device  
A method of manufacturing a MOSFET includes the steps of preparing a substrate with an epitaxial growth layer made of silicon carbide, performing ion implantation into the substrate with the...
8753937 Manufacturing method of power transistor device with super junction  
The present invention provides a manufacturing method of a power transistor device. First, a semiconductor substrate of a first conductivity type is provided, and at least one trench is formed in...
8753928 Method of manufacturing semiconductor device  
In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a...
8753945 Method of manufacturing a semiconductor device  
In a method of forming MOS transistor, a gate structure is formed on a substrate and a first spacer layer is formed on the substrate conformal to the gate structure. A second spacer layer is...
8748937 Insulated gate bipolar transistor with high breakdown voltage  
A semiconductor device includes a semiconductor layer of a first conductor type; a first semiconductor layer of a second conductor type, on the front of the semiconductor layer; a second...
8748301 Diffusing agent composition for ink-jet, and method for production of electrode or solar battery using the composition  
Provided are: a diffusing agent composition for ink-jet; a method for production of electrode and solar battery using the diffusing agent composition; and a solar battery produced by the method...
8742473 Semiconductor devices having lightly doped channel impurity regions  
Semiconductor devices are provided including a gate across an active region of a substrate; a source region and a drain region in the active region on either side of the gate and spaced apart from...
8722545 Method of selectively deglazing P205  
A method of forming a transistor is disclosed, in which gate-to-substrate leakage is addressed by forming and maintaining a conformal oxide layer overlying the transistor gate. Using the method...
8697562 Metal contacts for molecular device junctions and surface-diffusion-mediated deposition  
Metal contact formation for molecular device junctions by surface-diffusion-mediated deposition (SDMD) is described. In an example, a method of fabricating a molecular device junction by...
8669169 Diffusion sources from liquid precursors  
Methods for selectively diffusing dopants into a substrate wafer are provided. A liquid precursor is doped with dopants. The liquid precursor is selected from a group comprising monomers,...
8658454 Method of fabricating a solar cell  
Methods of fabricating solar cells are described. A porous layer may be formed on a surface of a substrate, the porous layer including a plurality of particles and a plurality of voids. A solution...
8629046 Semiconductor device with a dislocation structure and method of forming the same  
A semiconductor device with bi-layer dislocation and method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor...
8623749 Reduction of stored charge in the base region of a bipolar transistor to improve switching speed  
In one embodiment, a method includes forming a base region for a transistor using a base mask and forming a contact region to the base region. The contact region is formed in an area that is at...
8587113 Thermal plate with planar thermal zones for semiconductor processing  
A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, includes multiple independently controllable planar thermal zones arranged in a scalable...
8557662 Method for fabricating side contact in semiconductor device using double trench process  
A method for fabricating a semiconductor device is provided, the method includes forming a double trench including a first trench and a second trench formed below the first trench and having...
8513642 Patterned doping of semiconductor substrates using photosensitive monolayers  
A semiconductor device and a method of fabricating a semiconductor device are disclosed. Embodiments of the invention use a photosensitive self-assembled monolayer to pattern the surface of a...
8508016 Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device  
A bipolar punch-through semiconductor device has a semiconductor substrate, which includes at least a two-layer structure, a first main side with a first electrical contact, and a second main side...
8497570 Wafer, fabricating method of the same, and semiconductor substrate  
A wafer, a fabricating method of the same, and a semiconductor substrate are provided. The wafer includes a first substrate layer formed at a first surface, a second substrate layer formed at a...
8488644 Semiconductor laser element and manufacturing method thereof  
A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a...
8481414 Incorporating impurities using a discontinuous mask  
Methods of incorporating impurities into materials can be useful in non-volatile memory devices as well as other integrated circuit devices. Various embodiments provide for incorporating...
8481413 Doping of semiconductor substrate through carbonless phosphorous-containing layer  
A method and system are disclosed for doping a semiconductor substrate. In one embodiment, the method comprises forming a carbon free layer of phosphoric acid on a semiconductor substrate, and...
8475690 Diffusing agent composition, method of forming impurity diffusion layer, and solar battery  
An embodiment of the present invention relates to a diffusing agent composition used in printing an impurity-diffusing component onto a semiconductor substrate, wherein the diffusing agent...

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