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8975156 Method of sealing two plates with the formation of an ohmic contact therebetween  
A method of sealing a first wafer and a second wafer each made of semiconducting materials, including: implanting a metallic species in at least the first wafer, assembling the first wafer and the...
8962459 Diffusion sources from liquid precursors  
A method selectively diffuses dopants into a substrate wafer. The method comprises blanket depositing a doped liquid precursor including dopants on a surface of the substrate wafer to create a...
8828790 Method for local contacting and local doping of a semiconductor layer  
A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application...
8729711 Semiconductor device  
A semiconductor device includes a semiconductor substrate having a first surface being an element formation surface, and a second surface opposite to the first surface; a through-hole formed to...
8669169 Diffusion sources from liquid precursors  
Methods for selectively diffusing dopants into a substrate wafer are provided. A liquid precursor is doped with dopants. The liquid precursor is selected from a group comprising monomers,...
8658454 Method of fabricating a solar cell  
Methods of fabricating solar cells are described. A porous layer may be formed on a surface of a substrate, the porous layer including a plurality of particles and a plurality of voids. A solution...
8614115 Photovoltaic solar cell device manufacture  
A method for manufacturing a photovoltaic solar cell device includes the following. A p-n junction having a first doping density is formed. Formation of the p-n junction is enhanced by introducing...
8501604 Method for forming a doped region in a semiconductor layer of a substrate and use of such method  
A method of forming a doped region in a semiconductor layer of a substrate by alloying with doping elements is disclosed. In one aspect, the method includes screen printing a paste layer of doping...
8481419 Method for producing a metal contact on a coated semiconductor substrate  
A method for producing an electrically conducting metal contact on a semiconductor component having a coating on the surface of a semiconductor substrate. In order to keep transfer resistances low...
8455323 Method for manufacturing semiconductor wafer  
There is provided a method for manufacturing a semiconductor wafer, comprising: performing heating so that metals dissolve into semiconductors of the wafer to form a semiconductor-metal compound;...
8216926 Method of producing a partly or completely semi-insulating or p-type doped ZnO substrate, substrates obtained, and electronic, electro-optic or optoelectronic devices comprising them  
Method of producing a partly or completely semi-insulating or p-type doped ZnO substrate from an n-type doped ZnO substrate, in which the n-type doped ZnO substrate is brought into contact with an...
8174074 Asymmetric embedded silicon germanium field effect transistor  
A semiconductor device, an integrated circuit, and method for fabricating the same are disclosed. The semiconductor device includes a gate stack formed on an active region of a...
7629243 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor device is provided, which includes forming a gate insulating film on a semiconductor substrate, forming a first layer on the gate insulating film, the...
7268065 Methods of manufacturing metal-silicide features  
A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the...
7262119 Method for incorporating germanium into a semiconductor wafer  
A method of fabricating a semiconductor wafer includes fabricating a gate electrode on a silicon substrate of the semiconductor device and incorporating germanium into the silicon substrate...
7189623 Semiconductor processing method and field effect transistor  
A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate...
7109098 Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing  
A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an...
7060547 Method for forming a junction region of a semiconductor device  
A method for forming a junction region of a semiconductor device is disclosed. The steps of the method include providing a semiconductor substrate. A gate structure is formed on the semiconductor...
7012008 Dual spacer process for non-volatile memory devices  
In a two-step spacer fabrication process for a non-volatile memory device, a thin oxide layer is deposited on a wafer substrate leaving a gap in the core of the non-volatile memory device....
6872644 Semiconductor device with non-compounded contacts, and method of making  
A semiconductor device includes source and drain contact regions which include a non-compounded combination of a semiconductor material and at least one metal. The metal may include an elemental...
6709959 Semiconductor device having a shallow junction and a fabrication process thereof  
A semiconductor device is fabricated by introducing an impurity element into a Si substrate by an ion implantation process with an energy set such that the depth of a junction formed in the Si...
6531379 High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe  
The present invention employs a scanned atomic force probe to physical incorporate impurity atoms (dopant or bandgap) into a semiconductor substrate so that the impurity atoms have high resolution...
6507626 Bandpass phase tracker that automatically samples at prescribed carrier phases when digitizing VSB I-F signal  
A bandpass phase tracker automatically samples at prescribed carrier phases when digitizing a vestigial-sideband intermediate-frequency signal, which VSB I-F signal is modulated in accordance with...
6500741 Method for making high voltage device  
An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the...
6479885 High voltage device and method  
An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the...
6376346 High voltage device and method for making the same  
An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the...
6287881 Semiconductor device with low parasitic capacitance  
A method of fabricating a semiconductor device having active components grown on a substrate, involves providing a semiconductor substrate on which the active components are grown, and doping the...
5589408 Method of forming an alloyed drain field effect transistor and device formed  
A method of forming an alloyed drain field effect transistor (10). A field effect transistor and a bipolar transistor are formed in a portion of a monocrystalline semiconductor substrate (11) that...
5561079 Stalagraphy  
A method of lithography is disclosed for making very small structures (10-6 m and smaller) on a surface such as in the manufacture of semiconductor devices. Many micron-sized or smaller droplets...
4703553 Drive through doping process for manufacturing low back surface recombination solar cells  
A method for providing deep impurity doped regions under the back contacts of a solar cell. In a semiconductor wafer with a p-n junction therein defining an n+ layer emitter and p-type layer bulk,...
4436557 Modified laser-annealing process for improving the quality of electrical P-N junctions and devices  
The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is...
4392010 Photovoltaic cells having contacts and method of applying same  
Electrically conductive contacts containing zinc or other solderable metals, and aluminum are formed on the front and/or back surfaces of a solar cell. They are deposited by spraying the metals...
4389256 Method of manufacturing pn junction in group II-VI compound semiconductor  
A method of manufacturing a pn junction in a substantially n-type ZnSe compound semiconductor crystal grown by relying on a liquid growth method using temperature difference technique, by...
4349691 Method of making constant voltage solar cell and product formed thereby utilizing low-temperature aluminum diffusion  
A method of making a silicon solar energy cell having a substantially constant voltage despite significant increases in illumination, in which the back surface junction of the cell is formed by...
4301188 Process for producing contact to GaAs active region  
The stability of semiconductor devices such as gallium arsenide field effect transistors are significantly improved by controlling the process leading to the production of the drain contact. The...
4297149 Method of treating SiPOS passivated high voltage semiconductor device  
The breakdown voltage of high voltage semiconductor devices passivated with SiPOS deteriorates if the devices are allowed to soak at temperatures in the 400° C. to 525° C. range. The original...
4297391 Method of applying electrical contacts to a photovoltaic cell  
A method of forming an electrical contact on the surface of a photovoltaic cell in which particles of electrically conductive material are formed at a temperature in excess of the alloying...
4246693 Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum  
There is provided a method of fabricating a semiconductor device wherein in a bonding surface of a silicon substrate of n-type conductivity are formed recesses having each a bonding surface of a...
4226017 Method for making a semiconductor device  
A method for use in making semiconductor type electrical devices such as solar cells. In the method, a wafer of semiconductor material having two major surfaces is provided, the wafer being doped...
4128897 Archival memory media and method for information recording thereon  
Binary information is stored in a semiconductor archival memory medium by formation of a region of an alloy, of the semiconductor material and a non-doping material, at each of a plurality of...
4126496 Method of making a single chip temperature compensated reference diode  
A reference diode and a method for making same are described, wherein a single wafer of semiconductive material is processed to provide a reverse PN junction acting in its breakdown region and to...
4081794 Alloy junction archival memory plane and methods for writing data thereon  
A memory plane for an archival, non-volatile mass storage memory has a planar semiconductor diode with each of a plurality of small P-N junction diodes alloyed into the surface of its fabricated...
3975756 Gadolinium doped germanium  
A new light-sensitive, current limiting solid state diode is formed by using gadolinium as a dopant in a germanium crystal to which a gold-germanium eutectic is alloyed thereto, in order to form a...
3965279 Ohmic contacts for group III-V n-type semiconductors  
A metallization scheme for providing an ohmic contact to n-type III-V semiconductors is described. A metallurgical combination including germanium and palladium is formed on the semiconductor...
3886002 Method of obtaining a fused, doped contact between an electrode metal and a semi-conductor  
A multilayered structure containing an electrode metal, doping agents and titanium is made on the surface of a semi-conductor. In order to form such a structure the surface of the semi-conductor...
3858306 ALLOY JUNCTIONS IN MERCURY CADMIUM TELLURIDE  
PN junctions are formed in a P type body of mercury cadmium telluride by heating an indium body to form hot indium, which is then deposited on a surface of the P type body. The hot indium is...
3798082 TECHNIQUE FOR THE FABRICATION OF A PN JUNCTION DEVICE  
A passivated p-n junction device in which the junction is prevented from rising to the crystallographic surface by the interposition of a semi-insulating layer intermediate the crystallographic...
3793095 METHOD FOR INDIFFUSING OR ALLOYING-IN A FOREIGN SUBSTANCE INTO A SEMICONDUCTOR BODY  
To remove atomic hydrogen which forms recombination centers from silicon wafers, the silicon wafers used for indiffusing or in-alloying a foreign substance, are heated in a closed processing...
3767482 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE  
The invention relates to the provision of low-resistance ohmic contacts on AIII BV semiconductor bodies. The known alloying contacts provided by means of a doping layer show a poor thermal...
3713909 METHOD OF PRODUCING A TUNNEL DIODE  
A tunnel diode having a substantially flat junction area. The diode is fabricated on a heavily doped semiconductor substrate by chemical vapor deposition of a film of elemental dopant (of a...

Matches 1 - 50 out of 340 1 2 3 4 5 6 7 >