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8174074 |
Asymmetric embedded silicon germanium field effect transistor
A semiconductor device, an integrated circuit, and method for fabricating the same are disclosed. The semiconductor device includes a gate stack formed on an active region of a silicon-on-insulator...
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7629243 |
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device is provided, which includes forming a gate insulating film on a semiconductor substrate, forming a first layer on the gate insulating film, the...
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7268065 |
Methods of manufacturing metal-silicide features
A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the...
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7262119 |
Method for incorporating germanium into a semiconductor wafer
A method of fabricating a semiconductor wafer includes fabricating a gate electrode on a silicon substrate of the semiconductor device and incorporating germanium into the silicon substrate...
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7189623 |
Semiconductor processing method and field effect transistor
A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate...
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7109098 |
Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an...
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7060547 |
Method for forming a junction region of a semiconductor device
A method for forming a junction region of a semiconductor device is disclosed. The steps of the method include providing a semiconductor substrate. A gate structure is formed on the semiconductor...
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7012008 |
Dual spacer process for non-volatile memory devices
In a two-step spacer fabrication process for a non-volatile memory device, a thin oxide layer is deposited on a wafer substrate leaving a gap in the core of the non-volatile memory device....
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6872644 |
Semiconductor device with non-compounded contacts, and method of making
A semiconductor device includes source and drain contact regions which include a non-compounded combination of a semiconductor material and at least one metal. The metal may include an elemental...
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6709959 |
Semiconductor device having a shallow junction and a fabrication process thereof
A semiconductor device is fabricated by introducing an impurity element into a Si substrate by an ion implantation process with an energy set such that the depth of a junction formed in the Si...
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6531379 |
High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe
The present invention employs a scanned atomic force probe to physical incorporate impurity atoms (dopant or bandgap) into a semiconductor substrate so that the impurity atoms have high resolution...
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6507626 |
Bandpass phase tracker that automatically samples at prescribed carrier phases when digitizing VSB I-F signal
A bandpass phase tracker automatically samples at prescribed carrier phases when digitizing a vestigial-sideband intermediate-frequency signal, which VSB I-F signal is modulated in accordance with...
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6500741 |
Method for making high voltage device
An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the...
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6479885 |
High voltage device and method
An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the...
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6376346 |
High voltage device and method for making the same
An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the...
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6287881 |
Semiconductor device with low parasitic capacitance
A method of fabricating a semiconductor device having active components grown on a substrate, involves providing a semiconductor substrate on which the active components are grown, and doping the...
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5589408 |
Method of forming an alloyed drain field effect transistor and device formed
A method of forming an alloyed drain field effect transistor (10). A field effect transistor and a bipolar transistor are formed in a portion of a monocrystalline semiconductor substrate (11) that...
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5561079 |
Stalagraphy
A method of lithography is disclosed for making very small structures (10-6 m and smaller) on a surface such as in the manufacture of semiconductor devices. Many micron-sized or smaller droplets of...
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4703553 |
Drive through doping process for manufacturing low back surface recombination solar cells
A method for providing deep impurity doped regions under the back contacts of a solar cell. In a semiconductor wafer with a p-n junction therein defining an n+ layer emitter and p-type layer bulk,...
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4436557 |
Modified laser-annealing process for improving the quality of electrical P-N junctions and devices
The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is...
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4392010 |
Photovoltaic cells having contacts and method of applying same
Electrically conductive contacts containing zinc or other solderable metals, and aluminum are formed on the front and/or back surfaces of a solar cell. They are deposited by spraying the metals...
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4389256 |
Method of manufacturing pn junction in group II-VI compound semiconductor
A method of manufacturing a pn junction in a substantially n-type ZnSe compound semiconductor crystal grown by relying on a liquid growth method using temperature difference technique, by diffusing...
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4349691 |
Method of making constant voltage solar cell and product formed thereby utilizing low-temperature aluminum diffusion
A method of making a silicon solar energy cell having a substantially constant voltage despite significant increases in illumination, in which the back surface junction of the cell is formed by...
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4301188 |
Process for producing contact to GaAs active region
The stability of semiconductor devices such as gallium arsenide field effect transistors are significantly improved by controlling the process leading to the production of the drain contact. The...
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4297391 |
Method of applying electrical contacts to a photovoltaic cell
A method of forming an electrical contact on the surface of a photovoltaic cell in which particles of electrically conductive material are formed at a temperature in excess of the alloying...
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4297149 |
Method of treating SiPOS passivated high voltage semiconductor device
The breakdown voltage of high voltage semiconductor devices passivated with SiPOS deteriorates if the devices are allowed to soak at temperatures in the 400° C. to 525° C. range. The original b...
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4246693 |
Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum
There is provided a method of fabricating a semiconductor device wherein in a bonding surface of a silicon substrate of n-type conductivity are formed recesses having each a bonding surface of a...
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4226017 |
Method for making a semiconductor device
A method for use in making semiconductor type electrical devices such as solar cells. In the method, a wafer of semiconductor material having two major surfaces is provided, the wafer being doped...
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4128897 |
Archival memory media and method for information recording thereon
Binary information is stored in a semiconductor archival memory medium by formation of a region of an alloy, of the semiconductor material and a non-doping material, at each of a plurality of...
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4126496 |
Method of making a single chip temperature compensated reference diode
A reference diode and a method for making same are described, wherein a single wafer of semiconductive material is processed to provide a reverse PN junction acting in its breakdown region and to...
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4081794 |
Alloy junction archival memory plane and methods for writing data thereon
A memory plane for an archival, non-volatile mass storage memory has a planar semiconductor diode with each of a plurality of small P-N junction diodes alloyed into the surface of its fabricated...
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3975756 |
Gadolinium doped germanium
A new light-sensitive, current limiting solid state diode is formed by using gadolinium as a dopant in a germanium crystal to which a gold-germanium eutectic is alloyed thereto, in order to form a...
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3965279 |
Ohmic contacts for group III-V n-type semiconductors
A metallization scheme for providing an ohmic contact to n-type III-V semiconductors is described. A metallurgical combination including germanium and palladium is formed on the semiconductor...
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3886002 |
Method of obtaining a fused, doped contact between an electrode metal and a semi-conductor
A multilayered structure containing an electrode metal, doping agents and titanium is made on the surface of a semi-conductor. In order to form such a structure the surface of the semi-conductor is...
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3858306 |
ALLOY JUNCTIONS IN MERCURY CADMIUM TELLURIDE
PN junctions are formed in a P type body of mercury cadmium telluride by heating an indium body to form hot indium, which is then deposited on a surface of the P type body. The hot indium is...
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3798082 |
TECHNIQUE FOR THE FABRICATION OF A PN JUNCTION DEVICE
A passivated p-n junction device in which the junction is prevented from rising to the crystallographic surface by the interposition of a semi-insulating layer intermediate the crystallographic...
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3793095 |
METHOD FOR INDIFFUSING OR ALLOYING-IN A FOREIGN SUBSTANCE INTO A SEMICONDUCTOR BODY
To remove atomic hydrogen which forms recombination centers from silicon wafers, the silicon wafers used for indiffusing or in-alloying a foreign substance, are heated in a closed processing vessel...
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3767482 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
The invention relates to the provision of low-resistance ohmic contacts on AIII BV semiconductor bodies. The known alloying contacts provided by means of a doping layer show a poor thermal...
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3713909 |
METHOD OF PRODUCING A TUNNEL DIODE
A tunnel diode having a substantially flat junction area. The diode is fabricated on a heavily doped semiconductor substrate by chemical vapor deposition of a film of elemental dopant (of a...
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3680199 |
ALLOYING METHOD
This application discloses a method of joining two materials together by alloying wherein only a portion of one of the materials is heated to a temperature less than its melting point but greater...
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3670218 |
MONOLITHIC HETEROEPITAXIAL MICROWAVE TUNNEL DIE
A monolithic heteroepitaxial microwave tunnel diode with a vertical tunnel junction is manufactured from an insulating substrate on which a layer of p-type semiconductor material has been grown. A...
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3649882 |
DIFFUSED ALLOYED EMITTER AND THE LIKE AND A METHOD OF MANUFACTURE THEREOF
In a germanium transistor wherein an aluminum emitter is selectively diffused from an aluminum trichloride vapor phase chemical displacement reaction with germanium and is localized by a patterned...
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3648340 |
HYBRID SOLID-STATE VOLTAGE-VARIABLE TUNING CAPACITOR
A hybrid varactor including a surface varactor and a junction varactor. One form of the hybrid varactor includes the PN-junction of the junction varactor contiguous the semiconductor-insulator...
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3647536 |
OHMIC CONTACTS FOR GALLIUM ARSENIDE
Improved contact resistance to a gallium arsenide body is obtained by alloying the contact metal into the GaAs body in an arsenic vapor atmosphere.
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3636618 |
OHMIC CONTACT FOR SEMICONDUCTOR DEVICES
The disclosure herein relates to a method for forming ohmic contacts to the backside of solid-state semiconductor devices comprising a sequential deposition and alloying of a multilayered structure...
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3634931 |
METHOD FOR MANUFACTURING PRESSURE SENSITIVE SEMICONDUCTOR DEVICE
In a semiconductor device with a four-layer structure having the so-called thyristor characteristic, when the control electrode for controlling its breakover voltage is constructed by the Schottky...
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3623961 |
METHOD OF PROVIDING AN ELECTRIC CONNECTION TO A SURFACE OF AN ELECTRONIC DEVICE AND DEVICE OBTAINED BY SAID METHOD
A method of making copper bump contacts on a monolithic integrated circuit is described. The semiconductor is first contacted by aluminum through a hole in a covering oxide. Next, finally divided...
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3544865 |
RECTIFYING FERROMAGNETIC SEMICONDUCTOR DEVICES AND METHOD FOR MAKING SAME
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3544856 |
SANDWICH-STRUCTURE-TYPE ALLOYED SEMICONDUCTOR ELEMENT
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3544395 |
SILICON P-N JUNCTION DEVICE AND METHOD OF MAKING THE SAME
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