Matches 1 - 39 out of 39
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7375019 Image sensor and method for fabricating the same  
An image sensor and a method for fabricating the same are disclosed, to improve a contact quality between a contact plug and a source diffusion layer. The image sensor includes a photodiode in an...
7268065 Methods of manufacturing metal-silicide features  
A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the...
7247226 Coating support and method for the selective coating of conductive tracks on one such support  
The present invention concerns a lining support comprising a plurality of conductive pads ( 12 ) associated with a shared addressing contact ( 18 ) and means of selecting at least one pad to be...
7220661 Method of manufacturing a Schottky barrier rectifier  
A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a...
7189623 Semiconductor processing method and field effect transistor  
A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate...
7141861 Semiconductor device and manufacturing method there  
A problem in related art according to which an increase in leak current cannot be avoided in order to obtain a low forward voltage VF as forward voltage VF and reverse leak current IR...
7064408 Schottky barrier diode and method of making the same  
A power Schottky rectifier device having pluralities of trenches are disclosed. The Schottky barrier rectifier device includes field oxide region having p-doped region formed thereunder to avoid...
6846729 Process for counter doping N-type silicon in Schottky device Ti silicide barrier  
A Schottky diode is adjusted by implanting an implant species by way of a titanium silicide Schottky contact and driving the implant species into the underlying silicon substrate by a rapid anneal....
6806172 Physical vapor deposition of nickel  
Nickel film formation is implemented by heating a deposition chamber during deposition of nickel on a substrate or between processing of two or more substrates or both. Embodiments include forming...
6750088 SOI MOS field effect transistor and manufacturing method therefor  
A device isolation region made up of a silicon oxide film, which is perfectly isolated up to the direction of the thickness of an SOI silicon layer, and an activation region of the SOI silicon...
6656832 Plasma treatment method for fabricating microelectronic fabrication having formed therein conductor layer with enhanced electrical properties  
A method for fabricating a microelectronic fabrication provides for forming a patterned conductor layer into a via defined by a pair of dielectric layers. Within the method, the via is plasma...
6316342 Low turn-on voltage indium phosphide Schottky device and method  
A Schottky diode, and a method of making the same, which is fabricated on InP material and employs a Schottky layer including In x Al 1 -x AS with x>0.6, or else including a chirped graded...
6294445 Single mask process for manufacture of fast recovery diode  
A single mask process for manufacture of a FRED employs a thick oxide layer over an N type silicon surface and a thin nitride layer over the oxide. A single mask defines FRED device spaced P...
5478764 Method of producing semiconductor device including Schottky barrier diode incorporating a CVD refractory metal layer  
A method of producing a semiconductor device including a Schottky barrier diode (SBD) comprising the steps of: selectively forming an insulating layer having a first contact hole and a second...
5268316 Fabrication process for Schottky diode with localized diode well  
An improved Schottky diode structure (4) is formed by retrograde diffusing an N + concentration of relatively fast diffusing atoms, preferably Phosphorus atoms, to form a localized diode NWell...
4997788 Display device including lateral Schottky diodes  
In a display device including active switching units, lateral Schottky diodes are used as switching elements. In the lateral Schottky diodes a sub-micron distance between the Schottky electrode and...
4871686 Integrated Schottky diode and transistor  
An improved means and method is described for forming a Schottky diode integrated with transistors and other devices which is particularly useful where both control circuits and a large power...
4859616 Method of making schottky contacts on semiconductor surfaces  
In a Schottky contact on a semiconductor surface (3) comprising in the semiconductor edge region of the Schottky contact a doped guard ring (7) applied as self-aligning, and in which portions of...
4837174 Method for producing thin conductive and semi-conductive layers in mono-crystal silicon  
A method for producing thin conductive or semiconductive layers embedded in silicon in the manufacture of structures for integrated circuits and the like. The invention is characterized by...
4638551 Schottky barrier device and method of manufacture  
An improved Schottky barrier device and method of manufacture is disclosed. The device has a semiconductor layer of first conductivity type; an insulating layer covering one face of the...
4481041 Method for producing Schottky diodes  
Method for manufacturing Schottky diodes which have a doped self-aligning guard ring in the fringe region of the Schottky contact in the semiconductor layer underneath, in which the guard ring is...
4441931 Method of making self-aligned guard regions for semiconductor device elements  
A method for forming a guard zone (21) is disclosed, suitable for a guard ring for a Schottky barrier diode or for a channel guard zone for protecting the channel inversion layer of an insulated...
4418468 Process for fabricating a logic structure utilizing polycrystalline silicon Schottky diodes  
An integrated circuit structure and process for fabricating it are described which allow fabrication of a very compact high-speed logic gate. The structure utilizes a bipolar transistor formed in...
4357178 Schottky barrier diode with controlled characteristics and fabrication method  
A self-isolated Schottky Barrier diode structure and method of fabrication are disclosed for generating a device having controlled characteristics. An opening is made through an oxide layer over a...
4339869 Method of making low resistance contacts in semiconductor devices by ion induced silicides  
A low resistance electrical contact is made to a silicon substrate by forming a layer of a refractory metal on the substrate and thereafter applying a dosage of ions through the layer of refractory...
4338139 Method of forming Schottky-I.sup.2 L devices by implantation and laser bombardment  
A method for manufacturing a semiconductor device having a Schottky junction which comprises a process for burying first and second regions of a second conductivity type spaced from each other in a...
4310362 Method of making Schottky diode with an improved voltage behavior  
The voltage behaviour of a Schottky diode is improved by providing a Schottky diode of the type comprising an epitaxial layer locally covered with a metal layer and by depleting the space charge...
4260431 Method of making Schottky barrier diode by ion implantation and impurity diffusion  
A Schottky barrier diode is formed in a low impurity concentration N-type substrate by ion implanting N-type impurities to form a deep region having increased impurity surface concentration of at...
4243435 Bipolar transistor fabrication process with an ion implanted emitter  
A very high current ion implanted emitter is formed in a diffused base. Windows are made through the silicon nitride and silicon dioxide layes to both the base contact and the emitter regions using...
4119446 Method for forming a guarded Schottky barrier diode by ion-implantation  
An improved method for forming a guard ring Schottky barrier diode using ion implantation. Diodes formed in accordance with this method require less area but exhibit breakdown voltage comparable to...
4107835 Fabrication of semiconductive devices  
An improved Schottky barrier connection is made to a desired region of a silicon wafer by implanting the region with ions to peak at a particular depth; depositing a suitable contact material, such...
4096622 Ion implanted Schottky barrier diode  
A Schottky barrier diode having a subsurface metalsemiconductor rectifying barrier with electrical rectification properties immune to semiconductor surface contamination. A special ion implantation...
4063964 Method for forming a self-aligned schottky barrier device guardring  
The method allows the formation of a self-aligned guardring surrounding a Schottky barrier device. The resulting guardring is as close to the Schottky barrier device as is possible. This reduces...
4045248 Making Schottky barrier devices  
A semiconductor device comprising a semiconductor body portion having a shallow surface layer which is higher doped than the bulk of the semiconductor body portion, and a metal electrode on this...
4035907 Integrated circuit having guard ring Schottky barrier diode and method  
Integrated circuit having a guard ring Schottky barrier diode therein in which first and second layers of metallization are provided overlying the Schottky barrier diode which are brought into...
3943552 Semiconductor devices  
A semiconductor device comprising a semiconductor body portion having a shallow surface layer which is higher doped than the bulk of the semiconductor body portion, and a metal electrode on this...
3858304 PROCESS FOR FABRICATING SMALL GEOMETRY SEMICONDUCTOR DEVICES  
A process for fabricating small geometry semiconductor devices wherein an active region or regions are formed in a semiconductive layer and metalization patterns are formed on the surface thereof,...
3638300 FORMING IMPURITY REGIONS IN SEMICONDUCTORS  
The specification describes a technique for fabricating hyperabrupt silicon diodes with unusually sharp C-V characteristics and with a high degree of control. The technique employs an ion...
3558366 Title is not available  
Matches 1 - 39 out of 39