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8178412 Semiconductor memory device and method of manufacturing the same  
A plurality of memory cells each constituted of a memory cell transistor having a gate electrode in a laminated structure composed of a charge storage layer and a control gate layer and a select...
8105926 Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region  
A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity...
8084341 Semiconductor device and method for manufacturing the same  
The present invention provides a method for manufacturing a semiconductor device which includes a step of forming one optional impurity region in a semiconductor substrate at a place apart from the...
8003501 Method of doping P-type impurity ions in dual poly gate and method of forming dual poly gate using the same  
A method of doping p-type impurity ions in a dual poly gate, comprising: forming a polysilicon layer doped with n-type impurity ions on a substrate with a gate insulation layer being interposed...
7981747 Semiconductor device and a method of manufacturing the same  
A technology is provided to reduce ON-resistance, and the prevention of punch through is achieved with respect to a trench gate type power MISFET. Input capacitance and a feedback capacitance are...
7972947 Method for fabricating a semiconductor element, and semiconductor element  
In a method for fabricating a semiconductor element in a substrate, first implantation ions are implanted into the substrate, whereby micro-cavities are produced in a first partial region of the...
7968401 Reducing photoresist layer degradation in plasma immersion ion implantation  
A method of plasma immersion ion implantation of a workpiece having a photoresist mask on its top surface prevents photoresist failure from carbonization of the photoresist. The method includes...
7943459 Semiconductor device and method of manufacturing the semiconductor device  
A semiconductor device is provided with a conductor wire and a fuse wire formed in an insulating film over a semiconductor substrate, a first under-pad-wire insulating film formed above the...
7939440 Junction leakage suppression in memory devices  
A memory device includes a substrate and source and drain regions formed in the substrate. The source and drain regions include both phosphorous and arsenic and the phosphorous may be implanted...
7927954 Method for fabricating strained-silicon metal-oxide semiconductor transistors  
A method for fabricating strained-silicon transistors is disclosed. First, a semiconductor substrate is provided and a gate structure and a spacer surrounding the gate structure are disposed on the...
7867884 Sample wafer fabrication method  
A wafer fabrication method includes a first step of forming a plurality of first channel regions in a first region on a surface of a water, a second step of forming a plurality of second channel...
7868387 Low leakage protection device  
A high-voltage, low-leakage, bidirectional electrostatic discharge (ESD, or other electrical overstress) protection device includes a doped well disposed between the terminal regions and the...
7863147 Semiconductor device and fabrication method thereof  
A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a...
7825441 Junction field effect transistor with a hyperabrupt junction  
A junction field effect transistor (JFET) has a hyperabrupt junction layer that functions as a channel of a JFET. The hyperabrupt junction layer is formed by two dopant profiles of opposite types...
7825016 Method of producing a semiconductor element  
In a method for fabricating a semiconductor element in a substrate, micro-cavities are formed in the substrate. Furthermore, doping atoms are implanted into the substrate, whereby crystal defects...
7790586 Plasma doping method  
An impurity region is formed in a surface of a substrate by exposing the substrate to a plasma generated from a gas containing an impurity in a vacuum chamber. In this process, a plasma doping...
7781289 Method for fabricating higher quality thicker gate oxide in a non-volatile memory cell and associated circuits  
A non-volatile memory cell includes a program transistor and a control capacitor. A portion of a substrate associated with the program transistor is exposed to multiple implantations (such as DNW,...
7776726 Semiconductor devices and methods of manufacture thereof  
Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment includes providing a workpiece having a first orientation and at least one second orientation. The...
7759208 Low temperature ion implantation for improved silicide contacts  
Embodiments of the present invention provide a method that cools a substrate to a temperature below 10° C. and then implants ions into the substrate while the temperature of the substrate is below ...
7749874 Deep implant self-aligned to polysilicon gate  
A CMOS image sensor includes a pinned photodiode and a transfer gate that are formed using a thick mask that is self-aligned to at least one edge of the polysilicon gate structure to facilitate...
7749798 Optimized photodiode process for improved transfer gate leakage  
An image sensing circuit and method is disclosed, wherein a photodiode is formed in a substrate through a series of angled implants. The photodiode is formed by a first, second and third implant,...
7704822 Semiconductor device  
Embodiments relate to a semiconductor device. According to embodiments, a semiconductor device may include a plurality of wells formed on a substrate, threshold voltage control ion layers formed...
7700468 Semiconductor device and method of fabricating the same  
Provided are a semiconductor device and a method of fabricating the semiconductor device. In the method, a field oxide layer can be formed in a semiconductor substrate so as to define and active...
7696053 Implantation method for doping semiconductor substrate  
Embodiments relate to a semiconductor device that may include a gate stack formed on an upper portion of an active region in a semiconductor substrate, the gate stack including a gate insulating...
7678674 Memory cell dual pocket implant  
A method of forming implants for a memory cell includes forming an oxide-nitride-oxide (ONO) stack over a substrate and implanting first impurities in the substrate adjacent each side of the ONO...
7662690 Method of preparing a semiconductor substrate utilizing plural implants under an isolation region to isolate adjacent wells  
Multiple blanket implantations of one or more p type dopants into a semiconductor substrate are performed to facilitate isolation between nwell regions subsequently formed in the substrate. The...
7659188 Semiconductor device and method for manufacturing the same  
The present invention provides a method for manufacturing a semiconductor device which includes a step of forming one optional impurity region in a semiconductor substrate at a place apart from the...
7625774 Method of manufacturing CMOS image sensor  
Embodiments relate to a method of manufacturing a CMOS image sensor in which, when a buried photodiode is formed, a p-type impurity region may be formed simultaneously with a p-type LDD region in...
7598162 Method of manufacturing semiconductor device  
It is an object to provide a method of manufacturing a semiconductor device capable of forming a MOS transistor of high performance, comprising the steps of forming a gate electrode on a...
7585737 Method of manufacturing double diffused drains in semiconductor devices  
A method of manufacturing double diffused drains in a semiconductor device. An embodiment comprises forming a gate dielectric layer on a substrate, and masking and patterning the gate dielectric...
7550355 Low-leakage transistor and manufacturing method thereof  
A boron ion stream may be used to implant ions, such as boron ions, into the sidewalls of an active area, such as an NFET active area. The boron ion stream has both vertical tilt and horizontal...
7541247 Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication  
A semiconductor structure and a method for forming the same. The method includes providing a semiconductor structure. The semiconductor structure includes a semiconductor substrate. The method...
7521343 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Method of manufacturing semiconductor device  
It is an object to provide a method of manufacturing a semiconductor device capable of forming a MOS transistor of high performance, comprising the steps of forming a gate electrode on a...
7491586 Semiconductor device with leakage implant and method of fabrication  
A method of fabricating a thyristor-based memory may include forming different opposite conductivity-type regions in silicon for defining a thyristor and an access device in series relationship. An...
7485536 Abrupt junction formation by atomic layer epitaxy of in situ delta doped dopant diffusion barriers  
A method including forming a channel region between source and drain regions in a substrate, the channel region including a first dopant profile; and forming a barrier layer between the channel...
7473606 Method for fabricating metal-oxide semiconductor transistors  
A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate...
7432121 Isolation process and structure for CMOS imagers  
A barrier implanted region of a first conductivity type formed in lieu of an isolation region of a pixel sensor cell that provides physical and electrical isolation of photosensitive elements of...
7358167 Implantation process in semiconductor fabrication  
A semiconductor device is formed by performing an amorphizing ion implantation to implant dopants of a first conductivity type into a semiconductor body. The first ion implantation causes a defect...
7297579 Semiconductor device and manufacturing method thereof  
The objectives of the present invention are achieving TFTs having a small off current and TFT structures optimal for the driving conditions of a pixel portion and driver circuits, and providing a...
7291525 System and method for manufacturing thin film resistors using a trench and chemical mechanical polishing  
A system and method is disclosed for manufacturing thin film resistors using a trench and chemical mechanical polishing. A trench is etched in a layer of dielectric material and a thin film...
7268065 Methods of manufacturing metal-silicide features  
A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the...
7259072 Shallow low energy ion implantation into pad oxide for improving threshold voltage stability  
A method is described to fabricate a MOSFET device with increased threshold voltage stability. After the pad oxide and pad nitride are deposited on the silicon substrate and shallow trenches are...
7214592 Method and apparatus for forming a semiconductor substrate with a layer structure of activated dopants  
Methods of forming semiconductor devices with a layered structure of thin and well defined layer of activated dopants, are disclosed. In a preferred method, a region in a semiconductor substrate is...
7192823 Manufacturing method for transistor of electrostatic discharge protection device  
A manufacturing method for a transistor of an ESD protection device. First, the method forms basic elements on a semiconductor base. Next, a patterned resist layer is used as a mask to perform ion...
7189623 Semiconductor processing method and field effect transistor  
A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate...
7179714 Method of fabricating MOS transistor having fully silicided gate  
There is provided a method of fabricating a MOS transistor having a fully silicided gate, including forming a gate pattern and gate spacers on a semiconductor substrate, the gate pattern including...
7172933 Recessed polysilicon gate structure for a strained silicon MOSFET device  
A method of forming a channel region for a MOSFET device in a strained silicon layer via employment of adjacent and surrounding silicon-germanium shapes, has been developed. The method features...
7166506 Poly open polish process  
A method of fabricating microelectronic structure using at least two material removal steps, such as for in a poly open polish process, is disclosed. In one embodiment, the first removal step may...
7151015 Semiconductor device and manufacturing method thereof  
There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a...
7078325 Process for producing a doped semiconductor substrate  
A process is described which allows a buried, retrograde doping profile or a delta doping to be produced in a relatively simple and inexpensive way. The process uses individual process steps that...
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