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8178951 |
Compound semiconductor substrate and control for electrical property thereof
There is provided a compound semiconductor substrate prepared by forming a point defect in an inside structure thereof by implanting an electrically-neutral impurity with energy of 0.1 to 10 MeV on...
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8105926 |
Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region
A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity...
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8101488 |
Hydrogen implantation with reduced radiation
Embodiments of the present invention provide for a system for accelerating hydrogen ions. A hydrogen generator holding a supply of water is configured to generate a flow of hydrogen gas from the...
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8097529 |
System and method for the manufacture of semiconductor devices by the implantation of carbon clusters
A process is disclosed which incorporates implantation of a carbon cluster into a substrate to improve the characteristics of transistor junctions when the substrates are doped with Boron and...
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8076210 |
Method for fabricating metal-oxide semiconductor transistors
A method for fabricating a metal-oxide semiconductor transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a gate structure on the semiconductor...
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8053847 |
Method for fabricating metal-oxide semiconductor transistors
A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate...
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8048788 |
Method for treating non-planar structures using gas cluster ion beam processing
A method for treating a structure is described. One embodiment includes forming a structure on a substrate, wherein the structure has a plurality of surfaces including one or more first surfaces...
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7994031 |
Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
A method of manufacturing a semiconductor device is further described, comprising the steps of providing a supply of dopant atoms or molecules into an ionization chamber, combining the dopant atoms...
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7972945 |
Plasma doping apparatus and method, and method for manufacturing semiconductor device
A top plate, disposed on an upper portion of a vacuum container so as to face a substrate-placing area of a sample electrode, is provided with an impurity-containing film that contains an impurity,...
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7947582 |
Material infusion in a trap layer structure using gas cluster ion beam processing
A method of preparing a floating trap type device on a substrate is described. The method comprises forming a trap layer structure on a substrate, and modifying a composition of one or more layers...
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7943204 |
Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device...
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7919402 |
Cluster ion implantation for defect engineering
A method of semiconductor manufacturing is disclosed in which doping is accomplished by the implantation of ion beams formed from ionized molecules, and more particularly to a method in which...
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7884001 |
Image sensor and method for manufacturing the same
Embodiments relate to an image sensor and a method of manufacturing an image sensor. According to embodiments, an image sensor may include a gate over a semiconductor substrate, a first impurity...
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7855132 |
Method of manufacturing bonded wafer
The present invention provides a method of manufacturing a bonded wafer. The method includes forming an oxygen ion implantation layer in an active layer wafer having a substrate resistivity of 1 to...
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7816253 |
Surface treatment of inter-layer dielectric
When an interconnect structure is built on porous ultra low k (ULK) material, the bottom of the trench and/or via is usually damaged by a following metallization process which may be suitable for...
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7785978 |
Method of forming memory cell using gas cluster ion beams
A variable resistance memory cell structure and a method of forming it. The method includes forming a first electrode, forming an insulating material over the first electrode, forming a via in the...
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7767583 |
Method to improve uniformity of chemical mechanical polishing planarization
Embodiments of this method improve the results of a chemical mechanical polishing (CMP) process. A surface is implanted with a species, such as, for example, Si, Ge, As, B, P, H, He, Ne, Ar, Kr,...
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7759657 |
Methods for implanting B22Hx and its ionized lower mass byproducts
Methods for implanting an ionized polyhedral borane cluster or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing a polyhedral borane cluster...
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7732309 |
Plasma immersed ion implantation process
Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion...
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7723219 |
Plasma immersion ion implantation process with reduced polysilicon gate loss and reduced particle deposition
In plasma immersion ion implantation of a polysilicon gate, a hydride of the dopant is employed as a process gas to avoid etching the polysilicon gate, and sufficient argon gas is added to reduce...
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7723233 |
Semiconductor device and method of fabricating a semiconductor device
A method is proposed for the fabrication of the gate electrode of a semiconductor device such that the effects of gate depletion are minimized. The method is comprised of a dual deposition process...
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7696495 |
Method and device for adjusting a beam property in a gas cluster ion beam system
A method and device for adjusting a beam property, such as a beam size, a beam shape or a beam divergence angle, in a gas cluster beam prior to ionization of the gas cluster beam is described. A...
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7678637 |
CMOS fabrication process
Ultra high temperature (UHT) anneals above 1200 C for less than 100 milliseconds for PMOS transistors reduce end of range dislocations, but are incompatible with stress memorization technique (SMT)...
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7518124 |
Monatomic dopant ion source and method
Monotomic dopant ions for ion implantation are supplied from vapour of a species containing plural atoms of the desired dopant. The vapour is fed to a plasma chamber and a plasma produced in the...
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7494905 |
Method for preparing a source material including forming a paste for ion implantation
The present invention provides, for use in a semiconductor manufacturing process, a method (100) of preparing an ion-implantation source material. The method includes providing (110) a deliquescent...
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7491586 |
Semiconductor device with leakage implant and method of fabrication
A method of fabricating a thyristor-based memory may include forming different opposite conductivity-type regions in silicon for defining a thyristor and an access device in series relationship. An...
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7485551 |
Semiconductor-on-insulator type heterostructure and method of fabrication
The present invention relates to a method of fabricating a semiconductor-on-insulator-type heterostructure that includes at least one insulating layer interposed between a receiver substrate of...
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7442631 |
Doping method and method of manufacturing field effect transistor
A doping method comprising the steps of; obtaining a proportion X of ions of a compound including a donor or an acceptor impurity in total ions from mass spectrum by using a first source gas of a...
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7410890 |
Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.
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7405111 |
Methods for manufacturing an active matrix display device
The present invention is to carry out stable doping and to prevent the drastic pressure change in a treatment chamber by reducing degasification of resist during adding impurities. In the present...
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7396746 |
Methods for stable and repeatable ion implantation
A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system having a process chamber, a source for producing a plasma in the process chamber, a platen...
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7397048 |
Technique for boron implantation
A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction...
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7396745 |
Formation of ultra-shallow junctions by gas-cluster ion irradiation
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.
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7393765 |
Low temperature CVD process with selected stress of the CVD layer on CMOS devices
Device-enhancing coatings are deposited on CMOS devices by successively masking with photoresist each one of the sets of N-channel and P-channel devices while unmasking or leaving unmasked the...
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RE40138 |
Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a Teos liner deposition
A process for fabricating input/output, N channel, (I/O NMOS) devices, featuring an ion implanted nitrogen region, used to reduce hot carrier electron, (HEC), injection, has been developed. The...
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7268065 |
Methods of manufacturing metal-silicide features
A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the...
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7223676 |
Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing...
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7205552 |
Monatomic boron ion source and method
Monotomic boron ions for ion implantation are supplied from decaborane vapour. The vapour is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to...
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7186631 |
Method for manufacturing a semiconductor device
Provided is a method for manufacturing a semiconductor device comprising forming a device isolation layer on a semiconductor substrate; forming gate insulating layers on the upper part of the...
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7176108 |
Method of detaching a thin film at moderate temperature after co-implantation
A method of detaching a thin film from a source substrate comprises the steps of implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the...
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7144794 |
Ion source, ion implanting device, and manufacturing method of semiconductor devices
This ion source includes a chamber having an internal wall surface and an external wall surface, and also includes a cathode, which is provided to be insulated from the chamber, capable of emitting...
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7112501 |
Method of fabrication a silicon-on-insulator device with a channel stop
A fabrication process for a silicon-on-insulator (SOI) device includes defining an active region in an SOI substrate, doping the entire active region with an impurity of a given conductive type,...
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7067828 |
Method of and apparatus for measurement and control of a gas cluster ion beam
Methods and apparatus are disclosed for measuring controlling characteristics of clusters in a cluster ion beam, including average cluster ion velocity {overscore (v)}, average cluster ion mass...
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7064049 |
Ion implantation method, SOI wafer manufacturing method and ion implantation system
The present invention provides an ion implantation method which can achieve sufficient throughput by increasing a beam current even in the case of ions with a small mass number or low-energy ions,...
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7060598 |
Method for implanting ions into semiconductor substrate
An ion implantation method for implanting ions into a side wall of a protruded semiconductor layer from a semiconductor substrate, the method includes applying an electric field to accelerate the...
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6878417 |
Method of molecular-scale pattern imprinting at surfaces
A method for mask-free molecular or atomic patterning of surfaces of reactive solids is disclosed. Molecules adsorb at surfaces in patterns, governed by the structure of the surface, the chemical...
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6861320 |
Method of making starting material for chip fabrication comprising a buried silicon nitride layer
The invention provides a method of making silicon-on-insulator SOI substrates with nitride buried insulator layer by implantation of molecular deuterated ammonia ions ND3+, instead of implanting...
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6855622 |
Method and apparatus for forming a cavity in a semiconductor substrate using a charged particle beam
Apparatus and method for exposing a selected feature of an integrated circuit device such as a selected portion of the metallization layer, from the backside of the integrated circuit substrate...
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6841460 |
Anti-type dosage as LDD implant
A method is provided for turning off MOS transistors through an anti-code (type) LDD implant without the need for high energy implant that causes poly damage. The method also negates any...
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6825101 |
Methods for annealing a substrate and article produced by such methods
A method of this invention includes annealing at least one region of a substrate with a short pulse of particles. The particles can be electrons, protons, alpha particles, other atomic or molecular...
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