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8895387 Method of manufacturing nonvolatile semiconductor memory device  
According to one embodiment, a method includes forming first and second gate patterns each including a structure stacked in order of a first insulating layer, a floating gate layer, a charge trap...
8895348 Methods of forming a high efficiency solar cell with a localized back surface field  
A solar cell, comprising: a doped silicon substrate, the silicon substrate comprising a front surface and a rear surface; a front phosphorous diffusion layer formed on the front surface; a front...
8889503 Method for manufacturing semiconductor device  
Provided is a method for manufacturing a semiconductor device which includes, on a wafer which has a notch, a plurality of transistors parallel with and perpendicular to a notch direction extending...
8889535 Semiconductor device and method for fabricating semiconductor buried layer  
The present disclosure provides a semiconductor device and a method for fabricating a semiconductor buried layer. The method includes: preparing a substrate which includes a first oxide layer;...
8883589 Counter doping compensation methods to improve diode performance  
A method of forming a memory cell is provided, the method including forming a diode including a first region having a first conductivity type, counter-doping the diode to change the first region to...
8883620 Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process  
A novel process for using enriched and highly enriched dopant gases is provided herein that eliminates the problems currently encountered by end-users from being able to realize the process...
8883618 Method and device for the treatment of a semiconductor substrate  
Method for the treatment of a semiconductor substrate (2), in which an ion beam (4) is produced from a doping gas and is directed onto the semiconductor substrate (2), characterized in that the...
8883571 Transistor, method of manufacturing the transistor, semiconductor unit, method of manufacturing the semiconductor unit, display, and electronic apparatus  
A method of manufacturing a transistor includes: forming an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate...
8883619 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor device includes the steps of: preparing a substrate made of silicon carbide; forming, on one main surface of the substrate, a detection film having a...
8871619 Application specific implant system and method for use in solar cell fabrications  
Solar cells and other semiconductor devices are fabricated more efficiently and for less cost using an implanted doping fabrication system. A system for implanting a semiconductor substrate...
8853713 Resistive memory having confined filament formation  
Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the...
8853092 Self-aligned patterning with implantation  
A method of fabricating a plurality of features of a semiconductor device includes providing a dielectric layer over a silicon layer, and etching the dielectric layer and the silicon layer to form...
8853026 Semiconductor device having deep wells and fabrication method thereof  
Semiconductor devices and methods of fabricating the same are provided. An insulating film can be disposed on a semiconductor substrate, and insulating film patterns can be formed opening a...
8853065 Methods for fabricating semiconductor devices having reduced implant contamination  
A method of fabricating a semiconductor device includes selecting an element for implanting into a substrate. The element has at least a first isotope and a second isotope. At least one implant...
8846461 Silicon layer for stopping dislocation propagation  
A composite semiconductor structure and method of forming the same are provided. The composite semiconductor structure includes a first silicon-containing compound layer comprising an element...
8822290 FinFETs and methods for forming the same  
A method includes recessing isolation regions, wherein a portion of a semiconductor strip between the isolation regions is over top surfaces of the recessed isolation regions, and forms a...
RE45106 Semiconductor structure and method of manufacture  
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method to manufacture a semiconductor structure includes forming a...
8815754 Photoresists and methods for use thereof  
New photoresists are provided that comprise preferably as distinct components: a resin, a photoactive component and a phenolic component Preferred photoresists of the invention are can be useful...
8809171 Methods for forming FinFETs having multiple threshold voltages  
A method includes forming a first and a second gate stack to cover a first and a second middle portion of a first and a second semiconductor fin, respectively, and performing implantations to...
8802548 Semiconductor device having super junction metal oxide semiconductor structure and fabrication method for the same  
A semiconductor device includes: a first base layer; a drain layer disposed on the back side surface of the first base layer; a second base layer formed on the surface of the first base layer; a...
8790969 Effecting selectivity of silicon or silicon-germanium deposition on a silicon or silicon-germanium substrate by doping  
A method for selective deposition of Si or SiGe on a Si or SiGe surface exploits differences in physico-chemical surface behavior according to a difference in doping of first and second surface...
8779462 High-ohmic semiconductor substrate and a method of manufacturing the same  
The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein the semiconductor material includes...
8772142 Ion implantation method and ion implantation apparatus  
An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer,...
8772128 Method for manufacturing semiconductor device  
A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region...
8772891 Lateral overflow drain and channel stop regions in image sensors  
A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers,...
8772095 Method of manufacturing semiconductor device using stress memorization technique  
The manufacturing a semiconductor device includes providing a substrate supporting a gate electrode, amorphizing and doping the source/drain regions located on both sides of the gate electrode by...
8772878 Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material  
A silicon/germanium material and a silicon/carbon material may be provided in transistors of different conductivity type on the basis of an appropriate manufacturing regime without unduly...
8765583 Angled multi-step masking for patterned implantation  
An improved method of tilting a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. The...
8765617 Method of manufacturing semiconductor device  
A method of manufacturing a MOSFET includes the steps of preparing a substrate with an epitaxial growth layer made of silicon carbide, performing ion implantation into the substrate with the...
8759225 Method to form a CMOS image sensor  
The present disclosure relates to a method and composition to limit crystalline defects introduced in a semiconductor device during ion implantation. A high-temperature low dosage implant is...
8747551 Process for production of silicon single crystal, and highly doped N-type semiconductor substrate  
After adding phosphorus (P) and germanium (Ge) into a silicon melt or adding phosphorus into a silicon/germanium melt, a silicon monocrystal is grown from the silicon melt by a Czochralski method,...
8722522 Electro-static discharge protection device, semiconductor device, and method for manufacturing electro-static discharge protection device  
An electro-static discharge protection device including a gate electrode formed on a substrate. First and second diffusion regions of a first conductivity type are formed in the substrate with the...
8716114 Semiconductor device manufacturing method and semiconductor device  
A semiconductor device manufacturing method includes exciting plasma, applying RF power onto a target substrate to generate substrate bias and performing an ion implantation plural times by...
8709929 Methods of forming semiconductor devices having diffusion regions of reduced width  
Semiconductor devices and methods for forming semiconductor devices are provided, including semiconductor devices that comprise one or more diffusion regions in a semiconductor, the one or more...
8709928 Semiconductor fin device and method for forming the same using high tilt angle implant  
An angled implantation process is used in implanting semiconductor fins of a semiconductor device and provides for covering some but not necessarily all of semiconductor fins of a first type with...
8709927 Methods of implanting dopant ions  
Methods of implanting dopant ions in a substrate include depositing a sacrificial material on a substrate. Dopant ions are implanted into the substrate while sputtering the sacrificial material,...
8704229 Partial poly amorphization for channeling prevention  
Semiconductor devices are formed without zipper defects or channeling and through-implantation and with different silicide thicknesses in the gates and source/drain regions, Embodiments include...
8697559 Use of ion beam tails to manufacture a workpiece  
One method of implanting a workpiece involves implanting the workpiece with an n-type dopant in a first region with center and a periphery. The workpiece also is implanted with a p-type dopant in a...
8697555 Method of producing semiconductor device and semiconductor device  
The invention offers a method of producing a semiconductor device that can suppress the worsening of the property due to surface roughening of a wafer by sufficiently suppressing the surface...
8697554 Lateral collection architecture for SLS detectors  
Lateral collection architecture for a photodetector is achieved by depositing electrically conducting SLS layers onto a planar substrate and diffusing dopants of a carrier type opposite that of the...
8697553 Solar cell fabrication with faceting and ion implantation  
Solar cells in accordance with the present invention have reduced ohmic losses. These cells include photo-receptive regions that are doped less densely than adjacent selective emitter regions. The...
8691673 Semiconductor structure with suppressed STI dishing effect at resistor region  
A method includes forming a first isolation feature of a first width and a second isolation feature of a second width in a substrate, the first width being substantially greater than the second...
8691675 Vapor phase deposition processes for doping silicon  
A process of doping a silicon layer with dopant atoms generally includes reacting a vapor of a dopant precursor with oxide and/or hydroxide reactive sites present on the silicon layer to form a...
8685846 Technique for processing a substrate  
An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise...
8679959 High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation  
The present invention relates generally to methods for high throughput and controllable creation of high performance semiconductor substrates for use in devices such as high sensitivity...
8679906 Asymmetric multi-gated transistor and method for forming  
In one embodiment, there is an asymmetric multi-gated transistor that has a semiconductor fin with a non-uniform doping profile. A first portion of the fin has a higher doping concentration while a...
8679957 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device of an embodiment includes: preparing a silicon carbide substrate of a hexagonal system; implanting ions into the silicon carbide substrate; forming,...
8679960 Technique for processing a substrate having a non-planar surface  
A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the...
8679929 On current in one-time-programmable memory cells  
A method of fabricating a one-time programmable (OTP) memory cell with improved read current in one of its programmed states, and a memory cell so fabricated. The OTP memory cell is constructed...
8673450 Graphite member for beam-line internal member of ion implantation apparatus  
The problem of the present invention is to provide, in high current-low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus,...