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8697559 Use of ion beam tails to manufacture a workpiece  
One method of implanting a workpiece involves implanting the workpiece with an n-type dopant in a first region with center and a periphery. The workpiece also is implanted with a p-type dopant in a...
8697555 Method of producing semiconductor device and semiconductor device  
The invention offers a method of producing a semiconductor device that can suppress the worsening of the property due to surface roughening of a wafer by sufficiently suppressing the surface...
8697554 Lateral collection architecture for SLS detectors  
Lateral collection architecture for a photodetector is achieved by depositing electrically conducting SLS layers onto a planar substrate and diffusing dopants of a carrier type opposite that of the...
8697553 Solar cell fabrication with faceting and ion implantation  
Solar cells in accordance with the present invention have reduced ohmic losses. These cells include photo-receptive regions that are doped less densely than adjacent selective emitter regions. The...
8691673 Semiconductor structure with suppressed STI dishing effect at resistor region  
A method includes forming a first isolation feature of a first width and a second isolation feature of a second width in a substrate, the first width being substantially greater than the second...
8691675 Vapor phase deposition processes for doping silicon  
A process of doping a silicon layer with dopant atoms generally includes reacting a vapor of a dopant precursor with oxide and/or hydroxide reactive sites present on the silicon layer to form a...
8685846 Technique for processing a substrate  
An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise...
8679959 High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation  
The present invention relates generally to methods for high throughput and controllable creation of high performance semiconductor substrates for use in devices such as high sensitivity...
8679906 Asymmetric multi-gated transistor and method for forming  
In one embodiment, there is an asymmetric multi-gated transistor that has a semiconductor fin with a non-uniform doping profile. A first portion of the fin has a higher doping concentration while a...
8679957 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device of an embodiment includes: preparing a silicon carbide substrate of a hexagonal system; implanting ions into the silicon carbide substrate; forming,...
8679960 Technique for processing a substrate having a non-planar surface  
A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the...
8679929 On current in one-time-programmable memory cells  
A method of fabricating a one-time programmable (OTP) memory cell with improved read current in one of its programmed states, and a memory cell so fabricated. The OTP memory cell is constructed...
8673450 Graphite member for beam-line internal member of ion implantation apparatus  
The problem of the present invention is to provide, in high current-low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus,...
8673753 Multi-energy ion implantation  
In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam...
8658508 Method for manufacturing SOI substrate  
The present invention provides a method for manufacturing an SOI substrate, to improve planarity of a surface of a single crystal semiconductor layer after separation by favorably separating a...
8658994 Apparatus and method for controlled particle beam manufacturing  
A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream...
8652954 Method for manufacturing silicon carbide semiconductor device  
A method for manufacturing a silicon carbide semiconductor device includes the step of forming a mask pattern of a silicon oxide film by removing a portion of the silicon oxide film by means of...
8647946 Control gate  
A method for forming a semiconductor device is disclosed. The method includes providing a substrate prepared with a second gate structure. An inter-gate dielectric is formed on the substrate and...
8642135 Systems and methods for plasma doping microfeature workpieces  
Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in...
8642427 Semiconductor device and method for fabricating the same  
A semiconductor device including a semiconductor substrate of a first conductivity type and an epitaxial layer of the first conductivity type disposed thereon is disclosed. Pluralities of first and...
8644598 Complex pattern deciphering using architecture parallel to swarm intelligence  
A method of pattern recognition is disclosed. The method includes steps of: providing a cellular computer structure with processing cell units arranged in layers; sensing the threshold parameter in...
8637386 Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same  
An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the...
8629030 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Method for manufacturing SOI substrate
 
The present invention provides a method for manufacturing an SOI substrate, to improve planarity of a surface of a single crystal semiconductor layer after separation by favorably separating a...
8629016 Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer  
Multiple transistor types are formed in a common epitaxial layer by differential out-diffusion from a doped underlayer. Differential out-diffusion affects the thickness of a FET channel, the doping...
8623683 Method of fabricating a nitride semiconductor light emitting device  
According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and...
8609521 Method of manufacturing semiconductor device  
A silicon carbide substrate having a surface is prepared. An impurity region is formed by implanting ions from the surface into the silicon carbide substrate. Annealing for activating the impurity...
8603900 Reducing surface recombination and enhancing light trapping in solar cells  
Methods of improving the anti-reflection properties of one or more dielectric layers and reducing surface recombination of generated carriers of a solar cell are disclosed. In some embodiments,...
8598023 Substrate processing apparatus, substrate processing method, and method of manufacturing semiconductor device  
There is disclosed a substrate processing apparatus including a processing chamber housing a substrate, pipes for supplying gas into the processing chamber, and heaters provided in the middle of...
8598021 Method for junction avoidance on edge of workpieces  
A method of implanting ions into a workpiece without the formation of junctions, which impact the performance of the workpiece, is disclosed. To counteract the effect of dopant being implanted into...
8598000 Two step poly etch LDMOS gate formation  
A method of making a transistor is disclosed. The method starts with applying a first photoresist and performing a first etching of the first side of a gate where the gate includes an oxide layer...
8586460 Controlling laser annealed junction depth by implant modification  
Methods of enabling the use of high wavelength lasers to create shallow melt junctions are disclosed. In some embodiments, the substrate may be preamorphized to change its absorption...
8580662 Manufacture method of a split gate nonvolatile memory cell  
A split gate nonvolatile memory cell is provided with a first diffusion region, a second diffusion region, and a channel region formed between the first and second diffusion regions, including a...
8574363 Process for production of silicon single crystal, and highly doped N-type semiconductor substrate  
After adding phosphorus (P) and germanium (Ge) into a silicon melt or adding phosphorus into a silicon/germanium melt, a silicon monocrystal is grown from the silicon melt by a Czochralski method,...
8569150 Method for producing a semiconductor device with a semiconductor body  
A semiconductor device with a semiconductor body and method for its production is disclosed. The semiconductor body includes drift zones of epitaxially grown semiconductor material of a first...
8563408 Spin-on formulation and method for stripping an ion implanted photoresist  
A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional...
8563399 Detachable substrate and processes for fabricating and detaching such a substrate  
The invention relates to a detachable substrate for the electronics, optics or optoelectronics industry, that includes a detachable layer resting on a buried weakened region. This substrate is...
8557652 Application of cluster beam implantation for fabricating threshold voltage adjusted FETs  
Semiconductor structures including a high k gate dielectric material that has at least one surface threshold voltage adjusting region located within 3 nm or less from an upper surface of the high k...
8551861 Semiconductor device and method for manufacturing the same  
A semiconductor device and a method for manufacturing the same are disclosed. A method for manufacturing a semiconductor device includes forming a trench for defining an active region over a...
8536038 Manufacturing method for metal gate using ion implantation  
A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor...
8536031 Method of fabricating dual damascene structures using a multilevel multiple exposure patterning scheme  
A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first...
8530286 Low power semiconductor transistor structure and method of fabrication thereof  
A structure and method of fabrication thereof relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced σVT compared to conventional bulk CMOS and can allow ...
8530313 Method of manufacturing trench MOSFET structures using three masks process  
In according with the present invention, a semiconductor device is formed as follows. A contact insulation layer is deposited on the top surface of said silicon layer. A contact mask is applied and...
8524584 Carbon implantation process and carbon ion precursor composition  
Methods and carbon ion precursor compositions for implanting carbon ions generally includes vaporizing and ionizing a gas mixture including carbon oxide and methane gases in an ion source to create...
8524585 Method of manufacturing semiconductor device  
A method of manufacturing a MOSFET includes the steps of preparing a substrate with an epitaxial growth layer made of silicon carbide, performing ion implantation into the substrate with the...
8518835 Methods of utilizing block copolymers to form patterns  
Some embodiments include methods of forming patterns utilizing copolymer. A copolymer composition is formed across a substrate. The composition includes subunits A and B, and will be self-assembled...
8518784 Adjusting of strain caused in a transistor channel by semiconductor material provided for threshold adjustment  
The threshold voltage of a sophisticated transistor may be adjusted by providing a specifically designed semiconductor alloy in the channel region of the transistor, wherein a negative effect of...
8513102 Reduction of random telegraph signal (RTS) and 1/f noise in silicon MOS devices, circuits, and sensors  
The effects of random telegraph noise signal (RTS) or equivalently 1/f noise on MOS devices, circuits, and sensors is described. Techniques are disclosed for minimizing this RTS and low frequency...
8507974 Fin-like field effect transistor (FinFET) non-volatile random access memory (NVRAM) device with bottom erase gate  
A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary FinFET device includes a semiconductor substrate; an insulator layer disposed over the semiconductor substrate;...
8501601 Drive current increase in field effect transistors by asymmetric concentration profile of alloy species of a channel semiconductor alloy  
When forming sophisticated transistors, the channel region may be provided such that the gradient of the band gap energy of the channel material may result in superior charge carrier velocity. For...
8502284 Semiconductor device and method of manufacturing semiconductor device  
The semiconductor device includes a silicon substrate having a channel region, a gate electrode formed over the channel region, buried semiconductor regions formed in a surface of the silicon...