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8809171 Methods for forming FinFETs having multiple threshold voltages  
A method includes forming a first and a second gate stack to cover a first and a second middle portion of a first and a second semiconductor fin, respectively, and performing implantations to...
8802548 Semiconductor device having super junction metal oxide semiconductor structure and fabrication method for the same  
A semiconductor device includes: a first base layer; a drain layer disposed on the back side surface of the first base layer; a second base layer formed on the surface of the first base layer; a...
8790969 Effecting selectivity of silicon or silicon-germanium deposition on a silicon or silicon-germanium substrate by doping  
A method for selective deposition of Si or SiGe on a Si or SiGe surface exploits differences in physico-chemical surface behavior according to a difference in doping of first and second surface...
8779462 High-ohmic semiconductor substrate and a method of manufacturing the same  
The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein the semiconductor material includes...
8772142 Ion implantation method and ion implantation apparatus  
An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer,...
8772128 Method for manufacturing semiconductor device  
A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region...
8772891 Lateral overflow drain and channel stop regions in image sensors  
A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers,...
8772095 Method of manufacturing semiconductor device using stress memorization technique  
The manufacturing a semiconductor device includes providing a substrate supporting a gate electrode, amorphizing and doping the source/drain regions located on both sides of the gate electrode by...
8772878 Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material  
A silicon/germanium material and a silicon/carbon material may be provided in transistors of different conductivity type on the basis of an appropriate manufacturing regime without unduly...
8765583 Angled multi-step masking for patterned implantation  
An improved method of tilting a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. The...
8765617 Method of manufacturing semiconductor device  
A method of manufacturing a MOSFET includes the steps of preparing a substrate with an epitaxial growth layer made of silicon carbide, performing ion implantation into the substrate with the...
8759225 Method to form a CMOS image sensor  
The present disclosure relates to a method and composition to limit crystalline defects introduced in a semiconductor device during ion implantation. A high-temperature low dosage implant is...
8747551 Process for production of silicon single crystal, and highly doped N-type semiconductor substrate  
After adding phosphorus (P) and germanium (Ge) into a silicon melt or adding phosphorus into a silicon/germanium melt, a silicon monocrystal is grown from the silicon melt by a Czochralski method,...
8722522 Electro-static discharge protection device, semiconductor device, and method for manufacturing electro-static discharge protection device  
An electro-static discharge protection device including a gate electrode formed on a substrate. First and second diffusion regions of a first conductivity type are formed in the substrate with the...
8716114 Semiconductor device manufacturing method and semiconductor device  
A semiconductor device manufacturing method includes exciting plasma, applying RF power onto a target substrate to generate substrate bias and performing an ion implantation plural times by...
8709929 Methods of forming semiconductor devices having diffusion regions of reduced width  
Semiconductor devices and methods for forming semiconductor devices are provided, including semiconductor devices that comprise one or more diffusion regions in a semiconductor, the one or more...
8709928 Semiconductor fin device and method for forming the same using high tilt angle implant  
An angled implantation process is used in implanting semiconductor fins of a semiconductor device and provides for covering some but not necessarily all of semiconductor fins of a first type with...
8709927 Methods of implanting dopant ions  
Methods of implanting dopant ions in a substrate include depositing a sacrificial material on a substrate. Dopant ions are implanted into the substrate while sputtering the sacrificial material,...
8704229 Partial poly amorphization for channeling prevention  
Semiconductor devices are formed without zipper defects or channeling and through-implantation and with different silicide thicknesses in the gates and source/drain regions, Embodiments include...
8697559 Use of ion beam tails to manufacture a workpiece  
One method of implanting a workpiece involves implanting the workpiece with an n-type dopant in a first region with center and a periphery. The workpiece also is implanted with a p-type dopant in a...
8697555 Method of producing semiconductor device and semiconductor device  
The invention offers a method of producing a semiconductor device that can suppress the worsening of the property due to surface roughening of a wafer by sufficiently suppressing the surface...
8697554 Lateral collection architecture for SLS detectors  
Lateral collection architecture for a photodetector is achieved by depositing electrically conducting SLS layers onto a planar substrate and diffusing dopants of a carrier type opposite that of the...
8697553 Solar cell fabrication with faceting and ion implantation  
Solar cells in accordance with the present invention have reduced ohmic losses. These cells include photo-receptive regions that are doped less densely than adjacent selective emitter regions. The...
8691673 Semiconductor structure with suppressed STI dishing effect at resistor region  
A method includes forming a first isolation feature of a first width and a second isolation feature of a second width in a substrate, the first width being substantially greater than the second...
8691675 Vapor phase deposition processes for doping silicon  
A process of doping a silicon layer with dopant atoms generally includes reacting a vapor of a dopant precursor with oxide and/or hydroxide reactive sites present on the silicon layer to form a...
8685846 Technique for processing a substrate  
An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise...
8679959 High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation  
The present invention relates generally to methods for high throughput and controllable creation of high performance semiconductor substrates for use in devices such as high sensitivity...
8679906 Asymmetric multi-gated transistor and method for forming  
In one embodiment, there is an asymmetric multi-gated transistor that has a semiconductor fin with a non-uniform doping profile. A first portion of the fin has a higher doping concentration while a...
8679957 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device of an embodiment includes: preparing a silicon carbide substrate of a hexagonal system; implanting ions into the silicon carbide substrate; forming,...
8679960 Technique for processing a substrate having a non-planar surface  
A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the...
8679929 On current in one-time-programmable memory cells  
A method of fabricating a one-time programmable (OTP) memory cell with improved read current in one of its programmed states, and a memory cell so fabricated. The OTP memory cell is constructed...
8673450 Graphite member for beam-line internal member of ion implantation apparatus  
The problem of the present invention is to provide, in high current-low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus,...
8673753 Multi-energy ion implantation  
In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam...
8658508 Method for manufacturing SOI substrate  
The present invention provides a method for manufacturing an SOI substrate, to improve planarity of a surface of a single crystal semiconductor layer after separation by favorably separating a...
8658994 Apparatus and method for controlled particle beam manufacturing  
A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream...
8652954 Method for manufacturing silicon carbide semiconductor device  
A method for manufacturing a silicon carbide semiconductor device includes the step of forming a mask pattern of a silicon oxide film by removing a portion of the silicon oxide film by means of...
8647946 Control gate  
A method for forming a semiconductor device is disclosed. The method includes providing a substrate prepared with a second gate structure. An inter-gate dielectric is formed on the substrate and...
8642135 Systems and methods for plasma doping microfeature workpieces  
Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in...
8642427 Semiconductor device and method for fabricating the same  
A semiconductor device including a semiconductor substrate of a first conductivity type and an epitaxial layer of the first conductivity type disposed thereon is disclosed. Pluralities of first and...
8644598 Complex pattern deciphering using architecture parallel to swarm intelligence  
A method of pattern recognition is disclosed. The method includes steps of: providing a cellular computer structure with processing cell units arranged in layers; sensing the threshold parameter in...
8637386 Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same  
An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the...
8629030 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Method for manufacturing SOI substrate
 
The present invention provides a method for manufacturing an SOI substrate, to improve planarity of a surface of a single crystal semiconductor layer after separation by favorably separating a...
8629016 Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer  
Multiple transistor types are formed in a common epitaxial layer by differential out-diffusion from a doped underlayer. Differential out-diffusion affects the thickness of a FET channel, the doping...
8623683 Method of fabricating a nitride semiconductor light emitting device  
According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and...
8609521 Method of manufacturing semiconductor device  
A silicon carbide substrate having a surface is prepared. An impurity region is formed by implanting ions from the surface into the silicon carbide substrate. Annealing for activating the impurity...
8603900 Reducing surface recombination and enhancing light trapping in solar cells  
Methods of improving the anti-reflection properties of one or more dielectric layers and reducing surface recombination of generated carriers of a solar cell are disclosed. In some embodiments,...
8598023 Substrate processing apparatus, substrate processing method, and method of manufacturing semiconductor device  
There is disclosed a substrate processing apparatus including a processing chamber housing a substrate, pipes for supplying gas into the processing chamber, and heaters provided in the middle of...
8598021 Method for junction avoidance on edge of workpieces  
A method of implanting ions into a workpiece without the formation of junctions, which impact the performance of the workpiece, is disclosed. To counteract the effect of dopant being implanted into...
8598000 Two step poly etch LDMOS gate formation  
A method of making a transistor is disclosed. The method starts with applying a first photoresist and performing a first etching of the first side of a gate where the gate includes an oxide layer...
8586460 Controlling laser annealed junction depth by implant modification  
Methods of enabling the use of high wavelength lasers to create shallow melt junctions are disclosed. In some embodiments, the substrate may be preamorphized to change its absorption...