Matches 1 - 32 out of 32
Match Document Document Title
7504326 Use of scanning theme implanters and annealers for selective implantation and annealing  
A method and system for integrated circuit (IC) processing combines an ion implantation tool and a laser anneal tool in a single unit with a shared precision X-Y scanner. A semiconductor wafer is...
7268065 Methods of manufacturing metal-silicide features  
A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the...
6964917 Semi-insulating silicon carbide produced by Neutron transmutation doping  
A method is disclosed for producing highly uniform semi-insulating characteristics in single crystal silicon carbide for semiconductor applications. The method includes irradiating a silicon...
6913982 Method of fabricating a probe of a scanning probe microscope (SPM) having a field-effect transistor channel  
A probe of a scanning probe microscope (SPM) having a field-effect transistor (FET) structure at the tip of the probe, and a method of fabricating the probe are provided. The SPM probe having a...
6703292 Method of making a semiconductor wafer having a depletable multiple-region semiconductor material  
Semiconductor devices are known comprising a multiple p-n junction RESURF semiconductor material ( 10 ) that provides a voltage-sustaining space-charge zone when depleted from a blocking junction (...
6576511 Method for forming nitride read only memory  
A semiconductor substrate having a source/drain region is initially provided, wherein a channel is formed in the space between the source/drain region within the semiconductor substrate. Then the...
6465333 Method of manufacturing a circuit  
When the temperature of a silicon substrate is increased, a first annealing gas which is mainly composed of argon or the like that does not react with said silicon substrate with a trace of oxygen...
6403454 Silicon semiconductor devices with &dgr -doped layers  
We have discovered that, contrary to conventional wisdom about forming DP defects, electrical saturation in highly doped 2D layers of Si does not occur. In accordance with one aspect of our...
6114225 Local penetrating proton beam transmutation doping method for silicon  
Efficient transmutation doping of silicon through the bombardment of silicon wafers by a beam of protons is described. A key feature of the invention is that the protons are required to have an...
6100168 Location selective transmutation doping on silicon wafers using high energy deuterons  
Efficient transmutation doping of silicon through the bombardment of silicon wafers by a beam of deuterons is described. A key feature of the invention is that the deuterons are required to have an...
6001715 Non-thermal process for annealing crystalline materials  
Bulk crystalline materials are annealed by introducing into them mechanical energy of sufficient intensity to create a large amplitude sound wave. The mechanical energy may be introduced into the...
4910156 Neutron transmutation doping of a silicon wafer  
A silicon wafer and a method of producing a silicon wafer comprising a phosphor-doping method of doping phosphor into a single silicon crystals by transmuting isotope Si 30 contained in said...
4836788 Production of solid-state image pick-up device with uniform distribution of dopants  
A method for fabricating a solid-state image pick-up device changes part of the constituent elemental Si into the n-type impurity phosphorus P, thus changing the substrate to an n-type, by atomic...
4806497 Method for producing large-area power semiconductor components  
A method for producing large-area power semiconductor components, wherein at least two irradiation processes (neutron irridiation, ion implantation electron, γor proton irradiation) are used to...
4728371 Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation  
A method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation according to the reaction Si 30 (n,γ) Si 31 β - P 31 includes the steps of...
4639276 Method of making thyristor with a high tolerable bias voltage  
A thyristor having a high tolerable voltage V Bo comprising a first emitter layer (3), a first base layer (1), a second base layer (2), a second emitter layer (4) covering the surface except for a...
4526624 Enhanced adhesion of films to semiconductors or metals by high energy bombardment  
Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by...
4479829 Method for making high resistance chromium-free semiconductor substrate body with low resistance active semiconductor layer by surface irradiation  
A high resistance semiconductor substrate body with a thin low resistance active semiconductor layer thereon is generated by a method including the steps of subjecting the semiconductor substrate...
4469527 Method of making semiconductor MOSFET device by bombarding with radiation followed by beam-annealing  
A semiconductor substrate is formed by irradiating a semiconductor substrate with radioactive ray so as to generate lattice defects therein for making the entire substrate semi-insulating and then...
4240844 Reducing the switching time of semiconductor devices by neutron irradiation  
The switching time of certain semiconductor devices is decreased while maintaining other electrical characteristics of the devices by irradiating them with a neutron radiation source of greater...
4135951 Annealing method to increase minority carrier life-time for neutron transmutation doped semiconductor materials  
Semiconductor materials which have been doped by neutron transmutation require annealing at high temperatures in order to alleviate radiation damage and to restore electrical resistivity; however,...
4129463 Polycrystalline silicon semiconducting material by nuclear transmutation doping  
A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at...
4119441 Method for the production of n-doped silicon with a dish-shaped profile of specific resistance in a radial direction  
A method is disclosed for the production of n-doped silicon single crystals, each having a dish-shaped specific electrical resistance profile in a radial direction about a central axis of the...
4042454 Method of producing homogeneously doped n-type Si monocrystals by thermal neutron radiation  
Si monocrystals of the n-type are produced by zone melting polycrystalline Si rods under conditions sufficient to produce monocrystal rods, measuring the specific conductivity of such monocrystal...
4027051 Method of producing homogeneously doped n-type Si monocrystals and adjusting dopant concentration therein by thermal neutron radiation  
Homogeneously doped Si monocrystals of the n-type are produced from p- or n-type Si crystals having a random dopant concentration in radial and axial directions of the crystal and the dopant...
4025365 Method of producing homogeneously doped p-conductive semiconductor materials  
A homogeneously doped p-conductive semiconductor material is produced by irradiating a desired semiconductor material with γ-photons which trigger nuclear reactions within such irradiated material...
4000505 Thin oxide MOS solar cells  
A semiconductor device comprising a first layer of semiconductor material ving a bulk region of p-type conductivity and an inversion surface of n-type conductivity which forms a p-n junction with...
3971057 Lateral photodetector of improved sensitivity  
A lateral photodetector of improved sensitivity and method of making the e. The photodetector consists of semiconductive wafer, having a transparent layer of metal deposited on its front face to...
3967982 Method of doping a semiconductor layer  
A semiconductor layer, such as an epitaxial layer on a suitable substrate is subjected to controlled bombardment by neutrons whereby the atoms of the semiconductor layer are converted via nuclear...
3255050 Fabrication of semiconductor devices by transmutation doping  
3076732 Uniform n-type silicon  
3733222 Title is not available  
Matches 1 - 32 out of 32