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7566625 Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method  
For manufacture of a semiconductor device using a low heat resistant substrate such as a glass substrate, a method of heat treatment for activating an impurity element that is used to dope a...
7550328 Method for production of thin-film semiconductor device  
Disclosed herein is a method for production of a thin-film semiconductor device which includes, a first step to form a gate electrode on a substrate, a second step to form a gate insulating film of...
7534714 Radial temperature control for lattice-mismatched epitaxy  
Methods are disclosed of fabricating a compound nitride semiconductor structure. A substrate is disposed over a susceptor in a processing chamber, with the susceptor in thermal communication with...
7452792 Relaxation of layers  
The invention relates to a method of forming a layer of elastically unstrained crystalline material intended for electronics, optics, or optronics applications, wherein the method is carried out...
7407869 Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material  
A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a...
7402505 Single electron devices formed by laser thermal annealing  
A semiconductor device with a superlattice and method of making same includes forming a layer of amorphous silicon over a substrate, and forming a layer of nanocrystals by laser thermal annealing...
7361578 Method to form large grain size polysilicon films by nuclei-induced solid phase crystallization  
A method to enhance grain size in polysilicon films while avoiding formation of hemispherical grains (HSG) is disclosed. The method begins by depositing a first amorphous silicon film, then...
7358166 Relaxed, low-defect SGOI for strained Si CMOS applications  
Thermal mixing methods of forming a substantially relaxed and low-defect SGOI substrate material are provided. The methods include a patterning step which is used to form a structure containing at...
7358162 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device, includes the steps of: raising a temperature of a sapphire substrate which is included in the semiconductor device from a room temperature to a...
7358127 Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof  
Impurity concentration (N d (X)) in an n-drift layer in a diode is at a maximum at a position at a distance Xp from an anode electrode in a direction from the anode electrode to a cathode...
7338815 Semiconductor device manufacturing method  
A semiconductor device manufacturing method, includes a step of forming refractory metal silicide layers 13 a to 13 c in a partial area of a semiconductor substrate 10 , a step of forming an...
7332417 Semiconductor structures with structural homogeneity  
Semiconductor structures are formed with semiconductor layers having reduced compositional variation. Top surfaces of the semiconductor layers are substantially haze-free.
7316969 Method and apparatus for thermally treating substrates  
The object of the disclosure is to measure temperature using pyrometers, in a simple and economic way, enabling precise temperature measurement, even for low temperatures. The disclosure presents...
7282384 Thermoelectric transducing material thin film, sensor device, and its manufacturing method  
The present invention provides an SiGe-based thin film, a method for manufacturing this thin film, and applications of this thin film. The present invention relates to a method for producing, by...
7259094 Apparatus and method for heat treating thin film  
An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element...
7256110 Crystal manufacturing method  
A method of growing a crystal (for example, a GaN system compound semiconductor crystal) on a substrate at least includes forming a first crystalline layer (a GaN system buffer layer), forming a...
7256082 Production method for semiconductor device  
A method of manufacturing a semiconductor device that provides a semiconductor device having improved channel mobility includes a process of forming a gate insulation film of silicon oxide film,...
7244668 Methods of manufacturing semiconductor devices  
Methods for manufacturing semiconductor devices are disclosed. In one example, the semiconductor device has a gate and source/drain regions formed on a substrate. One example method includes...
7202145 Strained Si formed by anneal  
A semiconductor structure includes a silicon substrate layer, a relaxed silicon-germanium layer on the silicon substrate layer and a strained single crystal silicon layer on the silicon-germanium...
7179678 EBIC response enhancement in type III-VI semiconductor material on silicon  
A method of processing a type III–VI semiconductor material on a silicon substrate to improve minority carrier diffusion length and EBIC response is provided. The semiconductor material is heated...
7148130 Semiconductor device and method of manufacturing the same  
A semiconductor device is disclosed, which comprises a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulating film formed on a channel region between...
7098119 Thermal anneal process for strained-Si devices  
A method is disclosed for forming a semiconductor device using strained silicon. After forming a first substrate material with a first natural lattice constant on a device substrate and a second...
7074721 Method for forming thick copper self-aligned dual damascene  
A method for forming a void free ultra thick dual damascene copper feature providing a semiconductor process wafer comprising via openings formed in a first undoped silicate glass (USG) layer the...
7074698 Method of fabricating semiconductor device using plasma-enhanced CVD  
A method of fabricating a semiconductor device using a PECVD method is provided, which improves the adhesion strength of a deposited dielectric layer to an underlying layer and the reliability of...
7064037 Silicon-germanium virtual substrate and method of fabricating the same  
A method of forming a relaxed silicon-germanium layer for accommodation of an overlying silicon layer formed with tensile strain, has been developed. The method features growth of multiple...
7056755 P-type nitride semiconductor and method of manufacturing the same  
A method for manufacturing p-type nitride semiconductor comprising a semiconductor layer forming process where a low resistivity p-type nitride semiconductor layer is formed on a substrate by...
7045432 Method for forming a semiconductor device with local semiconductor-on-insulator (SOI)  
A semiconductor on insulator transistor is formed beginning with a bulk silicon substrate. An active region is defined in the substrate and an oxygen-rich silicon layer that is monocrystalline is...
7030419 Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof  
Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof are disclosed. The present invention provides a silica or silica-related thin film for...
7026228 Methods of fabricating devices and semiconductor layers comprising cadmium mercury telluride, mercury telluride, and cadmium telluride  
The invention relates to a method of depositing Hg 1-x Cd x Te onto a substrate, in a MOVPE technique, where 0≦x≦1; comprising the step of reacting together a volatile organotellurium compound,...
7001787 Electrode manufacturing method  
An electrode manufacturing method comprises: forming plural protruding portions on a surface of a substrate; introducing first particles having a size that changes according to heat, light, or a...
6984560 Methods of forming quantum dots in semiconductor devices  
Methods of forming quantum dots in semiconductor devices are disclosed. One example method includes adsorbing metal clusters on a silicon substrate by controlling density thereof, growing silicon...
6946370 Semiconductor crystal producing method  
In a separation layer removing process α, temperature in a reaction chamber (heat treatment temperature T X ) is raised to about 1000° C. and a separation layer A is evaporated through thermal...
6930026 Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon  
A Si substrate 1 with a SiGeC crystal layer 8 deposited thereon is annealed to form an annealed SiGeC crystal layer 10 on the Si substrate 1 . The annealed SiGeC crystal layer includes a...
6924219 Method for forming polysilicon germanium layer  
A method for forming a polysilicon germanium layer on a gate oxide layer without forming a polysilicon seed layer previously is disclosed. The method uses a chemical vapor deposition process at a...
6911367 Methods of forming semiconductive materials having flattened surfaces; methods of forming isolation regions; and methods of forming elevated source/drain regions  
The invention includes methods of forming epitaxially-grown semiconductive material having a flattened surface, and methods of incorporating such material into trenched regions and elevated/source...
6908797 Method of manufacturing a semiconductor device  
The present invention provides a manufacturing method of a semiconductor device, which is able to improve on-current and mobility of a polycrystal TFT without disturbing a high integration level,...
6897130 Method for thermal processing semiconductor wafer with a flash discharge lamp after preheating to a predetermined temperature  
The present invention provides a method for thermal processing a semiconductor wafer wherein the semiconductor wafer is heat-treated by means of flash radiation means constituted by a flash...
6881658 Process of and apparatus for heat-treating II-VI compound semiconductors and semiconductor heat-treated by the process  
A process of heat-treating II-VI compound semiconductors reduces the electrical resistivity without the decrease in crystallinity resulting from the increase in dislocation density. The process...
6869897 Manufacturing method for semiconductor substrate, and semiconductor device having a strained Si layer  
The present invention provides a method for manufacturing a semiconductor substrate, comprising the step of: forming a first buffer Si layer on a substrate having a silicon surface; epitaxially...
6864158 Method of manufacturing nitride semiconductor substrate  
A main surface of a base substrate of sapphire is selectively formed an irregular region on the main surface. Then, a semiconductor layer of gallium nitride is grown to fill recessed portions in...
6861340 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device  
A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C....
6858503 Depletion to avoid cross contamination  
A fabrication system utilizes a protocol for removing germanium from a top surface of a wafer. An exposure to a gas, such as a gas containing the hydrochloric acid can remove germanium from the top...
6806170 Method for forming an interface free layer of silicon on a substrate of monocrystalline silicon  
A method for forming an interface free layer of silicon on a substrate of monocrystalline silicon is provided. According to the method, a substrate of monocrystalline silicon having a surface...
6803296 Method of manufacturing a semiconductor device with leveling of a surface of a semiconductor film through irradiation  
To obtain a TFT, in which an off-current value is low and the fluctuation is suppressed, and an electronic equipment provided with the TFT. A film deposition temperature is set to substantially the...
6776842 Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic  
The present invention relates to a method of vapor phase epitaxial deposition of silicon on a silicon substrate including areas containing dopants at high concentration among which is arsenic,...
6709957 Method of producing epitaxial wafers  
The invention relates to a method of producing epitaxial wafers for the manufacture of high integration density devices capable of showing stable gettering effect. Specifically, it provides (1) a...
6667240 Method and apparatus for forming deposited film  
A method for forming a deposited film, comprising generating plasma in a plurality of successive vacuum containers and continuously forming a deposited film on a belt-like substrate while...
6660606 Semiconductor-on-insulator annealing method  
The number of defects (HF defects) in the SOI layer of an SOI substrate is reduced. In an annealing method of annealing an SOI substrate in a reducing atmosphere at a temperature equal to or less...
6650023 Apparatus for depositing thin film  
Disclosed is a thin film deposition apparatus for depositing a thin film on a display panel including a deposition source having a groove in one surface wherein the groove is filed with a thin film...
6645834 Method for manufacturing annealed wafer and annealed wafer  
Provided is a manufacturing process for an annealed wafer capable of elucidating a relationship between a tilt angle from a (100) plane of a wafer to be annealed and haze to set optimal tilt angles...
Matches 1 - 50 out of 158 1 2 3 4 >