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8183879 |
Measuring arrangement, semiconductor arrangement and method for operating a semiconductor component as a reference source
The invention relates to a measuring arrangement, a semiconductor arrangement and a method for operating a reference source, wherein at least one semiconductor component and a voltage source are...
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8178443 |
Hardmask materials
Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some e...
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8163634 |
Devices with graphene layers
A method includes an act of providing a crystalline substrate with a diamond-type lattice and an exposed substantially (111)-surface. The method also includes an act of forming a graphene layer or...
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8138064 |
Method for producing silicon film-transferred insulator wafer
A method for producing a silicon film-transferred insulator wafer is disclosed. The method includes a surface activation step of performing a surface activation treatment on at least one of a...
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8138086 |
Method for manufacturing flash memory device
A method of manufacturing a flash memory device and devices thereof, which may be capable of preventing damage to a gate. A method of manufacturing a flash memory device may include preparing a...
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8129284 |
Heat treatment method and heat treatment apparatus for heating substrate by light irradiation
A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the...
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8115137 |
Laser annealing method and laser annealing apparatus
In laser annealing using a solid state laser, a focus position of a minor axial direction of a rectangular beam is easily corrected depending on positional variation of a laser irradiated portion...
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8110486 |
Method of manufacturing semiconductor wafer by forming a strain relaxation SiGe layer on an insulating layer of SOI wafer
A semiconductor wafer is produced at a step of forming a lattice relaxation or a partly lattice-relaxed strain relaxation SiGe layer on an insulating layer in a SOI wafer comprising an insulating...
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8105916 |
Relaxation and transfer of strained layers
The invention relates to a process for fabricating a heterostructure. This process is noteworthy in that it comprises the following steps: a) a strained crystalline thin film is deposited on, or...
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8093144 |
Patterning of nanostructures
A technique for forming nanostructures including a definition of a charge pattern on a substrate and introduction of charged molecular scale sized building blocks (MSSBBs) to a region proximate the...
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8084312 |
Nitrogen based implants for defect reduction in strained silicon
A transistor is fabricated upon a semiconductor substrate, where the yield strength or elasticity of the substrate is enhanced or otherwise adapted. A strain inducing layer is formed over the...
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8076226 |
Apparatus for annealing, method for annealing, and method for manufacturing a semiconductor device
An apparatus for annealing a substrate includes a substrate stage having a substrate mounting portion configured to mount the substrate; a heat source having a plurality of heaters disposed under...
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8067298 |
Relaxation of a strained material layer with application of a stiffener
The invention relates to methods of fabricating a layer of at least partially relaxed material, such as for electronics, optoelectronics or photovoltaics. An exemplary method includes supplying a...
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8048783 |
Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same
A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the...
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8039374 |
Method for low temperature ion implantation
Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the...
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8034208 |
Deformation moderation method
A method of transferring a layer of a first material onto a second substrate of a second material includes, a step of forming a first embrittlement plane in a first substrate in first material, by...
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8030190 |
Method of manufacturing crystalline semiconductor thin film
Provided is a method of manufacturing a crystalline semiconductor thin film formed on an amorphous or poly-crystalline substrate such as a glass substrate, a ceramic substrate, and a plastic...
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8026145 |
Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
A process for the preparation of low resistivity arsenic or phosphorous doped (N+/N++) silicon wafers which, during the heat treatment cycles of essentially any arbitrary electronic device...
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8017509 |
Growth of monocrystalline GeN on a substrate
The present invention relates a method for forming a monocrystalline GeN layer (4) on a substrate (1) comprising at least a Ge surface (3). The method comprises, while heating the substrate (1) to...
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8014895 |
Temperature setting method of heat processing plate, temperature setting apparatus of heat processing plate, program, and computer-readable recording medium recording program thereon
An object of the present invention is to perform temperature setting of a heating plate so that a wafer is uniformly heated in an actual heat processing time. The temperature of a wafer is measured...
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8008171 |
Method of fabricating polycrystalline semiconductor
Disclosed is a method of providing a poly-Si layer used in fabricating poly-Si TFT's or devices containing poly-Si layers. Particularly, a method utilizing at least one metal plate covering the...
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8008198 |
Large scale method and furnace system for selenization of thin film photovoltaic materials
A method for fabricating a copper indium diselenide semiconductor film is provided using substrates having a copper and indium composite structure. The substrates are placed vertically in a furnace...
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8003531 |
Method for manufacturing flash memory device
A method for manufacturing a flash memory device is capable of controlling a phenomenon in which a length of the channel between a source and a drain is decreased due to undercut. The method...
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7992318 |
Heating apparatus, heating method, and computer readable storage medium
A disclosed heating apparatus for heating a substrate on which a film is coated includes a process chamber having a gas supply opening for supplying a first gas to the process chamber and a gas...
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7981733 |
Laser irradiation method, laser irradiation apparatus, and semiconductor device
An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are...
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7977221 |
Method for producing strained Si-SOI substrate and strained Si-SOI substrate produced by the same
A strained Si—SOI substrate, and a method for producing the same are provided, wherein the method includes the steps of growing a SiGe mixed crystal layer 14 on an SOI substrate 10 having an Si l...
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7977216 |
Silicon wafer and fabrication method thereof
Provided is a silicon wafer including: a first denuded zone formed with a predetermined depth from a top surface of the silicon wafer; and a bulk area formed between the first denuded zone and a...
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7968438 |
Ultra-thin high-quality germanium on silicon by low-temperature epitaxy and insulator-capped annealing
Exemplary embodiments provide semiconductor devices with a high-quality semiconductor material on a lattice mismatched substrate and methods for their manufacturing using low temperature growth...
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7964483 |
Growth method for nitride semiconductor epitaxial layers
The present invention relates to a method for growing a nitride semiconductor epitaxial layer, which comprises the steps of growing a second nitride semiconductor epitaxial layer on a first nitride...
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7947581 |
Formation of graphene wafers on silicon substrates
Processes for forming full graphene wafers on silicon or silicon-on-insulator substrates. The processes comprise formation of a metal carbide layer on the substrate and annealing of the metal...
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7943414 |
Method for manufacturing SOI substrate
An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the...
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7935617 |
Method to stabilize carbon in Si1-x-yGexCy layers
A method of providing a layer in a semiconductor device, wherein the layer includes Si1-x-yGexCy, and wherein the carbon in the layer is in a stable condition, includes preparing a silicon...
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7892934 |
SOI substrate and method for manufacturing SOI substrate
On the side of a surface (the bonding surface side) of a single crystal Si substrate, a uniform ion implantation layer is formed at a prescribed depth (L) in the vicinity of the surface. The...
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7851318 |
Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device
A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a...
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7790491 |
Method for forming non-volatile memory cells and related apparatus and system
A method includes forming a release layer of a semiconductor device being fabricated, where the release layer has a trapezoidal shape. The method also includes forming a cantilever, which has a...
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7785991 |
Process for integrating a III-N type component on a (001) nominal silicium substrate
A process is provided for integrating a III-N component, such as GaN, on a (001) or (100) nominal silicon substrate. There are arranged a texture of elementary areas each comprising an individual...
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7776758 |
Methods and devices for forming nanostructure monolayers and devices including such monolayers
Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in...
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7767549 |
Method of manufacturing bonded wafer
The present invention provides a method of manufacturing a bonded wafer. The method comprises an oxidation step in which an oxide film is formed on at least one surface of a base wafer, a bonding...
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7763487 |
Integrated differential pressure sensor and manufacturing process thereof
A process for manufacturing an integrated differential pressure sensor includes forming, in a monolithic body of semiconductor material having a first face and a second face, a cavity extending at...
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7754585 |
Method of heat treatment of silicon wafer doped with boron
A method of subjecting a silicon wafer doped with boron to a heat treatment in an argon atmosphere, wherein the argon atmosphere is replaced with a hydrogen atmosphere or a mixed gas of an argon...
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7718500 |
Formation of raised source/drain structures in NFET with embedded SiGe in PFET
A structure and method for forming raised source/drain structures in a NFET device and embedded SiGe source/drains in a PFET device. We provide a NFET gate structure over a NFET region in a...
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7713806 |
Structures and methods for manufacturing of dislocation free stressed channels in bulk silicon and SOI MOS devices by gate stress engineering with SiGe and/or Si:C
Structures and methods of manufacturing are disclosed of dislocation free stressed channels in bulk silicon and SOI (silicon on insulator) CMOS (complementary metal oxide semiconductor) devices by...
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7709337 |
Method for manufacturing SOI substrate and semiconductor device
It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible...
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7691655 |
Method of manufacturing semiconductor optical device
Method for manufacturing a semiconductor optical device includes forming an epitaxial structure containing at least an active layer which can emit light, of a III-V group semiconductor material;...
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7682939 |
Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films
This invention relates to a method for producing group IB-IIA-VIA quaternary or higher alloy semiconductor films wherein the method comprises the steps of (i) providing a metal film comprising a...
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7648577 |
MBE growth of p-type nitride semiconductor materials
A method of growing a p-type nitride semiconductor material by molecular beam epitaxy (MBE) uses bis(cyclopentadienyl)magnesium (Cp2Mg) as the source of magnesium dopant atoms. Ammonia gas is used...
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7642179 |
Semiconductor substrate and manufacturing method for the same
A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer...
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7637997 |
Silicon wafer, method for producing silicon wafer and method for growing silicon single crystal
A silicon single crystal is grown by the CZ method. A silicon melt from which the crystal is grown is added with dopant such that the crystal has a resistivity of 0.025 to 0.08 Ωcm. As well as the ...
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7566625 |
Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method
For manufacture of a semiconductor device using a low heat resistant substrate such as a glass substrate, a method of heat treatment for activating an impurity element that is used to dope a...
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7534714 |
Radial temperature control for lattice-mismatched epitaxy
Methods are disclosed of fabricating a compound nitride semiconductor structure. A substrate is disposed over a susceptor in a processing chamber, with the susceptor in thermal communication with...
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