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7589003 GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon  
A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD reaction chamber includes introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the...
7585752 Process for deposition of semiconductor films  
Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high...
7553742 Method(s) of forming a thin layer  
A method of forming a thin layer including providing a first single-crystalline silicon layer partially exposed through an opening in an insulation pattern and forming an epitaxial layer on the...
7531450 Method of fabricating semiconductor device having contact hole with high aspect-ratio  
Provided is a method of fabricating a semiconductor device having a contact hole with a high aspect-ratio. The method includes: sequentially forming a lower pattern and an upper layer on a...
7524741 Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device  
A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga 2 O 3 substrate in a MOCVD apparatus; providing a H 2 atmosphere in the MOCVD apparatus and setting a...
7524740 Localized strain relaxation for strained Si directly on insulator  
A method of forming a localized region of relaxed Si in a layer of strained Si arranged within a strained silicon directly on insulator (SSDOI) semiconductor substrate is provided by the invention....
7491628 Method for patterning large scale nano-fibrous surfaces using capillography  
A method of assembling large numbers of nanoscale structures in pre-determined ways using fluids or capillary lithography to control the patterning and arrangement of the individual nanoscale...
7446024 Method of forming nanowires with a narrow diameter distribution  
The growth of nanowires with a narrow diameter distribution is provided. The growth comprises: providing a substrate; providing a plurality of nanoparticles having a distribution of particle sizes...
7427556 Method to planarize and reduce defect density of silicon germanium  
A method for blanket depositing a SiGe film comprises intermixing a silicon source, a germanium source and an etchant to form a gaseous precursor mixture. The method further comprises flowing the...
7413967 Yield improvement in silicon-germanium epitaxial growth  
A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer....
7378331 Methods of vertically stacking wafers using porous silicon  
A method and article to provide a three-dimensional (3-D) IC wafer process flow. In some embodiments, the method and article include bonding a device layer of a multilayer wafer to a device layer...
7371666 Process for producing luminescent silicon nanoparticles  
A process for producing brightly photoluminescent silicon nanoparticles with an emission spanning the visible spectrum is disclosed. In one aspect, the process involves reacting a silicon precursor...
7361563 Methods of fabricating a semiconductor device using a selective epitaxial growth technique  
Methods of fabricating a semiconductor device using a selective epitaxial growth technique include forming a recess in a semiconductor substrate. The substrate having the recess is loaded into a...
7309660 Buffer layer for selective SiGe growth for uniform nucleation  
Methods for preparing a surface for selective silicon-germanium epitaxy by forming a thin silicon (Si) buffer layer or a thin, low concentration SiGe buffer layer for uniform nucleation, are...
7291544 Homoepitaxial gallium nitride based photodetector and method of producing  
A photodetector ( 100, 200, 300 ) comprising a gallium nitride substrate, at least one active layer ( 104, 302 ) disposed on the substrate ( 102, 202, 306 ), and a conductive contact structure (...
7279115 Method to reduce stacking fault nucleation sites and reduce Vf drift in bipolar devices  
A method is disclosed for preparing a substrate and epilayer for reducing stacking fault nucleation and reducing forward voltage (V f ) drift in silicon carbide-based bipolar devices. The method...
7271077 Deposition methods with time spaced and time abutting precursor pulses  
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
7250357 Manufacturing method for strained silicon wafer  
A manufacturing method for producing a stained silicon wafer has the steps of forming an Si 1-x Ge x composition-graded layer of which Ge concentration is stepwisely increased on a single crystal...
7238596 Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs  
A process for is provided for synthesizing a compound having the formula E(GeH 3 ) 3 wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P). GeH 3 Br and...
7176054 Method of forming a p-type group II-VI semiconductor crystal layer on a substrate  
A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique....
7144779 Method of forming epitaxial silicon-comprising material  
The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising...
7135420 Semiconductor device and manufacturing method thereof  
Single crystal silicon is grown in a [100] direction to make a bulk. Next, a silicon substrate with a normal of a surface extending in an inclined direction from a [100] direction is cut from the...
7125732 Semiconductor light emitting device and its manufacturing method  
In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding...
7118995 Yield improvement in silicon-germanium epitaxial growth  
A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer....
7115427 Red light-emitting device and method for preparing the same  
The present red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, a plurality of silicon nanocrystals distributed...
7084051 Manufacturing method for semiconductor substrate and manufacturing method for semiconductor device  
A purpose of the invention is to provide a manufacturing method for a semiconductor substrate in which a high quality strained silicon channel can easily be formed without sacrificing the...
7067405 Atmospheric glow discharge with concurrent coating deposition  
A plasma is produced in a treatment space by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes separated by a dielectric...
7056789 Production method for semiconductor substrate and production method for field effect transistor and semiconductor substrate and field effect transistor  
The present invention relates to a semiconductor substrate production method, field effect transistor production method, semiconductor substrate and field effect transistor which, together with...
7041342 Thin-film solar cells and method of making  
There are now provided thin-film solar cells and method of making. The devices comprise a low-cost, low thermal stability substrate with a semiconductor body deposited thereon by a deposition gas....
7038299 Selective synthesis of semiconducting carbon nanotubes  
Methods for selecting semiconducting carbon nanotubes from a random collection of conducting and semiconducting carbon nanotubes synthesized on multiple synthesis sites carried by a substrate and...
7033938 Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region  
The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of...
7029988 Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium  
A method and device are provided for shallow trench isolation for a silicon wafer containing silicon-germanium. In one example, the method comprises forming a trench region in a silicon-germanium...
7022593 SiGe rectification process  
A method for forming strain-relaxed SiGe films comprises depositing a graded strained SiGe layer on a substrate in which the concentration of Ge is greater at the interface with the substrate than...
7022545 Production method of SiC monitor wafer  
The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a...
7001787 Electrode manufacturing method  
An electrode manufacturing method comprises: forming plural protruding portions on a surface of a substrate; introducing first particles having a size that changes according to heat, light, or a...
6979370 Methods, complexes, and system for forming metal-containing films  
A method of forming a film on a substrate using Group IIIA metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor...
6934312 System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom  
A system for fabricating a light emitting device is disclosed. The system contains a growth chamber and at least one nitrogen precursor that is introduced to the growth chamber. The at least one...
6897129 Fabrication method of semiconductor device and semiconductor device  
Gases for film formation are introduced from a plurality of holes provided at a gas nozzle into a processing chamber of a batch-type CVD film-forming apparatus to cause a turbulence of the gases...
6890785 Nitride semiconductor, semiconductor device, and manufacturing methods for the same  
A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor...
6858519 Atomic hydrogen as a surfactant in production of highly strained InGaAs, InGaAsN, InGaAsNSb, and/or GaAsNSb quantum wells  
Atomic hydrogen flux impinging on the surface of a growing layer of III-V compounds during VCSEL processing can prevent three-dimensional growth and related misfit dislocations. Use of hydrogen...
6841456 Method of making an icosahedral boride structure  
A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (B 12 P...
6838153 Layered product, capacitor and a method for producing the layered product  
A method for producing a laminate having resin layers and thin metal layers by repeating a process unit comprising a step of laminating a resin layer by applying a resin material, a step of...
6812117 Method for creating a reconfigurable nanometer-scale electronic network  
The present invention includes a method for creating a reconfigurable nanometer-scale electronic network. One embodiment of the invention is made up of the following steps. The first step entails...
6784079 Method of manufacturing silicon  
A production method of silicon which comprises the steps of bringing a silane into contact with a surface of a substrate so as to cause silicon to be deposited while the surface of the substrate is...
6764926 Method for obtaining high quality InGaAsN semiconductor devices  
A method for making high quality InGaAsN semiconductor devices is presented. The method allows the making of high quality InGaAsN semiconductor devices using a single MOCVD reactor while avoiding...
6759346 Method of forming dielectric layers  
A method of forming a dielectric layer includes placing a semiconductor wafer in a reaction chamber. Oxygen, hafnium and silicon sources are separately provided to the reaction chamber to react...
6747298 Collets for bonding of light emitting diodes having shaped substrates  
Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the...
6723622 Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer  
A composite of germanium film for a semiconductor device and methods of making the same. The method comprises growing a graded germanium film on a semiconductor substrate in a deposition chamber...
6703291 Selective NiGe wet etch for transistors with Ge body and/or Ge source/drain extensions  
The wet etch stage of the salicide process normally used to fabricate polysilicon and silicon-based semiconductor transistors may not be appropriate for germanium-based transistors because the wet...
6683013 Method of formation for quantum dots array using tilted substrate  
Disclosed is a method of forming a quantum dots array. In the method of the present invention, a structure of wire-like quantum dots with good quality is formed in materials having an inconsistency...
Matches 1 - 50 out of 183 1 2 3 4 >