Matches 101 - 150 out of 183 < 1 2 3 4 >
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5879970 Process of growing polycrystalline silicon-germanium alloy having large silicon content  
Polycrystalline silicon-germanium alloy is grown on a glass substrate through a chemical vapor deposition under the conditions where the substrate temperature ranges from 350 degrees to 450 degrees...
5874349 Multi-layer structure for II-VI group compound semiconductor and method for forming the same  
In a method of forming a II-VI compound semiconductor thin film on an InP substrate, a layer of III-V compound semiconductor mixed crystal is first formed on the InP substrate. The desorption rate...
5854123 Method for producing semiconductor substrate  
A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through...
5834362 Method of making a device having a heteroepitaxial substrate  
A method for fabricating a compound semiconductor device includes the steps of depositing a first group III-V compound semiconductor layer on a surface of a Si substrate while holding a temperature...
5834363 Method of manufacturing semiconductor wafer, semiconductor wafer manufactured by the same, semiconductor epitaxial wafer, and method of manufacturing the semiconductor epitaxial wafer  
There is disclosed a method of manufacturing a semiconductor wafer which has a dopant evaporation preventive film formed on one of main surfaces thereof, wherein a film serving as the dopant...
5811349 Method for growing a semiconductor layer  
A fluid switching valve comprises a valve box and a rotary valve element. The valve box is provided with a plurality of fluid inlets and a single fluid outlet connected with each other by a fluid...
5744380 Method of fabricating an epitaxial wafer  
There is provided a high quality epitaxial water on which the density of microscopic defects in the epitaxial layer is reduced to keep the GOI thereof sufficiently high and to reduce a leakage...
5686350 Method for fabricating defect-free compound semiconductor thin film on dielectric thin film  
A method for fabricating a defect-free compound semiconductor thin film on a dielectric thin film which oxidizes multi-semiconductor layers consisting of a hetero compound semiconductor thin film...
5679152 Method of making a single crystals Ga*N article  
A method of making a single crystal Ga*N article, including the steps of: providing a substrate of crystalline material having a surface which is epitaxially compatible with Ga*N; depositing a...
5646054 Method for manufacturing MOS transistor of high breakdown voltage  
A high threshold voltage MOS transistor is described having a triple diffused drain structure in which low, medium and high concentration impurity layers overlap each other. The MOS transistor is...
5630905 Method of fabricating quantum bridges by selective etching of superlattice structures  
A quantum bridge structure including wires of a semiconductor material such as silicon which are formed by selectively etching a superlattice of alternating layers of at least two semiconductor...
5620557 Sapphireless group III nitride semiconductor and method for making same  
A method of manufacturing two sapphireless layers (3a, 3b) at one time made of Group III nitride compound semiconductor satisfying the formula Al x Ga y In 1 -x-y N, inclusive of x=0, y=0, and...
5616515 Silicon oxide germanium resonant tunneling  
A resonant tunneling diode (400) made of a germanium quantum well (406) with silicon oxide tunneling barriers (404, 408). The silicon oxide tunneling barriers (404, 408) plus germanium quantum well...
5602057 Process of making a semiconductor device using crystal growth by a nucleation site in a recessed substrate and planarization  
A semiconductor device includes a substrate, a recess formed on the substrate, a first conductive type semiconductor region and a second conductive type semiconductor region having an opposite...
5563087 Method of fabricating InAs/GaSb/AlSb material system SRAM  
An SRAM including first and second RITDs each formed with a heterostructure including a GaSb active layer sandwiched between AlSb barrier layers, which are sandwiched between InAs layers with each...
5525540 Method for manufacturing silicon layer having impurity diffusion preventing layer  
In a method for manufacturing a silicon layer, a silicon layer is grown simultaneously with doping impurities into the silicon layer. Then, an impurity diffusion preventing layer is grown by...
5413679 Method of producing a silicon membrane using a silicon alloy etch stop layer  
A method of producing a silicon membrane has a step of forming an etch stop layer on an upper surface of a silicon substrate having lower and upper opposing surfaces, the etch stop layer comprising...
5400354 Laminated upper cladding structure for a light-emitting device  
A fabrication method for providing a semiconductor light-emitting device includes growing a plurality of layers on a semiconductor substrate, including forming a lower cladding layer and an active...
5393698 Method for fabricating semiconductor devices  
A process for fabricating gold/gallium arsenide structures, in situ, on molecular beam epitaxially grown gallium arsenide. The resulting interface proves to be Ohmic, an unexpected result which is...
5363800 Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers  
This invention is a method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and...
5342804 Method of fabrication of devices with different operating characteristics through a single selective epitaxial growth process  
A semiconductor device structure (10) includes similar devices (30), (32), and (34) having different operating characteristics. Each similar device is formed on a semiconductor substrate layer (14)...
5326721 Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer  
This is a method for fabricating a structure useful in semiconductor circuitry. The method comprises: growing a germanium layer 28 directly or indirectly on a semiconductor substrate 20; and...
5286335 Processes for lift-off and deposition of thin film materials  
Novel processes permit integrating thin film semiconductor materials and devices using epitaxial lift off, alignment, and deposition onto a host substrate. One process involves the following steps....
5272106 Method for the making of an optoelectronic device  
Disclosed is a method for the making of an optoelectronic device such as buried lasers in which the different layers of the device are chiefly made during a single step of epitaxy by means of a...
5258322 Method of producing semiconductor substrate  
A method of producing a semiconductor substrate, which comprises forming a monocrystalline silicon layer on a porous silicon substrate by epitaxial growth and applying an oxidation treatment to the...
5248385 Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers  
The invention is a method for growing homoepitaxial films of SiC on low-tilt-angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth...
5225369 Tunnel diode detector for microwave frequency applications  
A tunnel diode is disclosed having a highly P-doped layer of indium gallium arsenide formed on a highly N-doped layer of indium gallium arsenide which is supported on a semi-insulating substrate of...
5221637 Mesa release and deposition (MRD) method for stress relief in heteroepitaxially grown GaAs on Si  
A mesa release and deposition (MRD) method realizes stress relief in GaAs layers on Si, useful in practical device applications. A thin AlAs layer is incorporated in the heteroepitaxial GaAs layer...
5198071 Process for inhibiting slip and microcracking while forming epitaxial layer on semiconductor wafer  
A process for the formation of an epitaxial layer on a semiconductor wafer is described which inhibits the formation of thermal stress in the semiconductor wafer such as a silicon wafer, during the...
5179035 Method of fabricating two-terminal non-linear devices  
Large numbers of small sized, physically discrete, two-terminal non-linear devices, typically around 20 μm across, are produced simultaneously, each exhibiting substantially identical physical and...
5170139 PIN diode switch  
This is a monolithic PIN diode switch circuit. The switch comprises: input ports, output ports, bias nodes and PIN diodes. Each port or node is connected to receive a bias signal. Preferably the...
5166100 Methods of making nanometer period optical gratings  
An ultragrating is a nanometer-period optical grating that is fabricated from a horizontal superlattice. A superlattice is a material structure grown on a substrate by molecular-beam epitaxy or...
5110765 Selective etch for GaAs-containing group III-V compounds  
A solution of H 2 O 2 and EDTA selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V compounds. Illustratively, Al y Ga 1 -y As (y≤0) is selectively...
5094975 Method of making microscopic multiprobes  
A thin, electrically insulating film is formed on a crystalline substrate and a multiplicity of holes are densely formed in the film. Conductive crystals are epitaxially grown on the substrate...
5084411 Semiconductor processing with silicon cap over Si.sub.1-x Ge.sub.x Film  
Improved devices with silicon to SiGe alloy heterojunctions are provided for in accordance with the following discoveries. X-ray topography and transmission electron microscopy were used to...
5059551 Process for neutralizing acceptor atoms in p-type InP  
Process for neutralizing acceptor atoms in p-type InP. This process consists of subjecting to epitaxy a p-doped InP layer (4) and then a not intentionally doped Ga 0 .47 In 0 .53 As layer (6) on an...
5057022 Method of making a silicon integrated circuit waveguide  
A method for forming a semiconductor waveguide includes forming a layer of expitaxial silicon (12) over a substrate (10). The impurity concentration of the layer (12) is higher than that of the...
5047355 Semiconductor diode and method for making it  
A semiconductor diode has three adjacent regions. The doped regions are doped in the same manner and are separated from one another by a third, intrinsic region. The intrinsic region is dimensioned...
4987095 Method of making unpinned oxide-compound semiconductor structures  
Unpinned epitaxial metal-oxide-compound semiconductor structures are disclosed and a method of fabricating such structures is described. Epitaxial layers of compound semiconductor are grown by MBE...
4983539 Process for producing a semiconductor article  
A process for producing a semiconductor article comprises applying crystal formation treatment to a substrate having a free surface on which a nonnucleation surface exhibiting a smaller nucleation...
4983540 Method of manufacturing devices having superlattice structures  
An ion beam (113) focused into a diameter of at most 0.1 μm bombards substantially perpendicularly to the superlattice layers of a one-dimensional superlattice structure and is scanned...
4981814 Preparation of semiconductor devices  
It has been found that layers which include arsenic and/or zinc can have an adverse effect upon optoelectronic semiconductor devices such as lasers. This is reduced by treatments in which arsenic...
4977103 Method of making an article comprising a III/V semiconductor device  
The presence of oval defects on MBE-grown compound semiconductor (e.g., GaAs, InP, or InGaAs) epitaxial layers has proven to be a serious obstacle to the use of such material for the manufacture of...
4962057 Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth  
In situ evaporation of selected surface regions or layers of compound semiconductors is accomplished without breaking the growth system environment employing photo induced evaporation enhancement...
4948751 Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor  
A method of selective epitaxial growth includes a step of selectively forming an insulator film on a predetermined region of a semiconductor substrate and a step of evaporating a starting material...
4933299 Method of forming 3-D structures using MOVCD with in-situ photoetching  
MOVPE growth and photoetching are integrated into a unified sequence which is carried out without removing a workpiece from a MOVPE reactor. Growth may be carried out before, after or before and...
4920076 Method for enhancing growth of SiO.sub.2 in Si by the implantation of germanium  
A method for enhancing the conversion of Si to SiO 2 in a directional fashion wherein steam or wet oxidation of Si is enhanced by the prior implantation of Ge into the Si. The unique advantages of...
4883770 Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication  
A molecular beam epitaxy (MBE) process in which some portions of the substrate are shadowed by a shadow mask from receiving at least one of the molecular beams used in the MBE process. This process...
4824805 Method of manufacturing semiconductor device  
A method of manufacturing a heterojunction bipolar transistor comprising the sequential steps of; forming an extra epitaxial layer (9) on a layered structure which consists of a collector layer...
4645687 Deposition of III-V semiconductor materials  
A low temperature procedure for depositing III-V semiconductor materials that offers the possibility of higher deposition rates together with abrupt junction formation has been found. This process...
Matches 101 - 150 out of 183 < 1 2 3 4 >