Matches 51 - 100 out of 183 < 1 2 3 4 >
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6673702 Method for producing a semiconductor device  
A method for producing a semiconductor device of the present invention includes: heating a first semiconductor layer made of a Group III nitride-based compound semiconductor in gas containing...
6673701 Atomic layer deposition methods  
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
6649494 Manufacturing method of compound semiconductor wafer  
A protector film is formed on the surface of a substrate to cover at least the side surface thereof. Then, a compound semiconductor film including nitrogen is grown through epitaxial growth on the...
6650023 Apparatus for depositing thin film  
Disclosed is a thin film deposition apparatus for depositing a thin film on a display panel including a deposition source having a groove in one surface wherein the groove is filed with a thin film...
6602767 Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery  
A method for transferring a porous layer includes forming a porous layer on one side of a crystalline silicon member by anodization, fixing a supporting substrate onto the surface of the porous...
6586785 Aerosol silicon nanoparticles for use in semiconductor device fabrication  
A stratum or discontinuous monolayer of dielectric-coated semiconductor particles includes a high density of semiconductor nanoparticles with a tightly controlled range of particle sizes in the...
6583034 Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure  
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the...
6576535 Carbon doped epitaxial layer for high speed CB-CMOS  
A method for fabricating a high speed complementary bipolar/CMOS device is disclosed which enables the forming of a silicon epitaxial layer in a PNP transistor having carbon incorporated therein to...
6544870 Silicon nitride film comprising amorphous silicon quantum dots embedded therein, its fabrication method and light-emitting device using the same  
The present invention relates to a light-emitting device utilizing amorphous silicon quantum dot nanostructures, wherein the light-emitting device can be fabricated using the existing silicon...
6524935 Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique  
A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) is described incorporating growing epitaxial Si 1−y Ge y layers on a semiconductor substrate, implanting hydrogen...
6521470 Method of measuring thickness of epitaxial layer  
A method of measuring the thickness of an epitaxial layer is disclosed. The method is particularly useful in measuring the epitaxial layer with a doping concentration lower than or similar to the...
6518082 Method for fabricating nitride semiconductor device  
First, the substrate temperature is set to 1020° C., and an n-type cladding layer ( 14 ) made of n-type Al 0.1 Ga 0.9 N, an n-type optical guide layer ( 15 ) made of n-type GaN, and a flatness...
6458675 Semiconductor device having a plasma-processed layer and method of manufacturing the same  
A semiconductor device includes: a semiconductor substrate; an active layer; and a plasma-processed layer provided between the semiconductor substrate and the active layer. The plasma-processed...
6444547 Method for manufacturing semiconductor device  
The present invention is characterized by providing epitaxial growth of a semiconductor layer on the surface of a wafer not provided with mirror finishing and having irregularity, introducing...
6444546 Single electron device using ultra-thin metal film and method for fabricating the same  
There is provided a single electron device. The device has weak links with bottle-neck figure in place of the tunnel junction of the prior device. The weak links are easily formed on the same...
6440765 Method for fabricating an infrared-emitting light-emitting diode  
A method for fabricating an infrared-emitting light-emitting diode in which a layer sequence is applied onto a semiconductor substrate, preferably composed of GaAs. The layer sequence has,...
6441392 Device based on quantic islands and method for making same  
A quantic effect device which functions using a Coulomb blockade phenomenon. The device includes two electron reservoirs, two sets of islands that are separated by a dielectric layer, a protective...
6429102 Method of manufacturing low resistivity p-type compound semiconductor material  
The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of...
6406982 Method of improving epitaxially-filled trench by smoothing trench prior to filling  
A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is...
6380038 Transistor with electrically induced source/drain extensions  
A method of fabricating an integrated circuit provides a transistor having less susceptibility to short channel effects. The transistor utilizes a U-shaped gate conductor and a main gate conductor....
6368935 Method for upgrading quality of DRAM capacitor and wafer-to-wafer uniformity  
A method for upgrading qualities of DRAM capacitors and wafer-to-wafer uniformity is disclosed. In order to effectively prevent wafers from contaminations, the invention uses an additional silane...
6344403 Memory device and method for manufacture  
A semiconductor memory device with a floating gate that includes a plurality of nanoclusters ( 21 ) and techniques useful in the manufacturing of such a device are presented. The device is formed...
6337239 Layer configuration with a material layer and a diffusion barrier which blocks diffusing material components and process for producing a diffusion barrier  
A layer configuration includes a material layer and a diffusion barrier which blocks diffusing material components. The barrier is disposed in the vicinity of a layer boundary of the material layer...
6306739 Method and apparatus for depositing thin films of group III nitrides and other films and devices made therefrom  
In this invention, one or more metal-containing sources and one or more ammonium halides are heated such that they evaporate into a vacuum environment (except that, in MOMBE, a beam of the...
6281099 Method for synthesizing single crystal AIN thin films of low resistivity n-type and low resistivity p-type  
In growing single AlN thin films on a semiconductor substrate by rapidly cooling a beam of atomic Al and atomic or molecular N obtained by exciting or decomposing N 2 with an electromagnetic wave...
6274464 Epitaxial cleaning process using HCL and N-type dopant gas to reduce defect density and auto doping effects  
An epitaxial layer is formed on a P type silicon substrate in which a plurality of P+ buried layer regions, a plurality of N+ buried layer regions, and a P+ field layer region occupying most of the...
6242327 Compound semiconductor device having a reduced source resistance  
A compound semiconductor device includes a low resistance source and drain region covered by a protective layer of a compound semiconductor device carrying thereon a source electrode or a drain...
6242325 Method for optimising the etch rate of polycrystalline layer  
The present invention concerns a method for optimising the etching rate of a polycrystalline layer having a predetermined composition comprising at least two chemical species arranged in the form...
6239045 Semiconductor producing apparatus and producing method for epitaxial wafer using same  
By perfectly preventing a particle from being attached on a silicon wafer or a silicon epitaxial wafer before and after the silicon epitaxial growth, pit formation on the silicon epitaxial layer in...
6140209 Process for forming an SOI substrate  
A process for producing an SOI substrate is disclosed which is useful for saving resources and lowering production cost. Further, a process for producing a photoelectric conversion device such as a...
6136626 Semiconductor light-emitting device and production method thereof  
A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga 1 -x In x N (0≤x≤0.3) doped with a p-type impurity and an n-type impurity; and first...
6103600 Method for forming ultrafine particles and/or ultrafine wire, and semiconductor device using ultrafine particles and/or ultrafine wire formed by the forming method  
A quantum dot and quantum fine wire forming method is provided which can allow control of the position for crystalline particle growth and enables formation of particles with high uniformity in...
6103543 Fabrication of device electrodes in gan and related materials  
A base layer of electode made of at least a metal selected from V, Nb, and Zr, or an alloy containing such metal on an n-type GaN compound semiconductor layer. Further, a main electrode layer made...
6083833 Method for forming conductive film for semiconductor device  
A method for forming a conductive film for a semiconductor device wherein a conductive film is formed on each wafer loaded in a boat of a vertical furnace of a low pressure chemical vapor...
6043141 Method for in situ growth of p-type doped group II-VI semiconductor films  
A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material wherein a cation-rich condition is...
6040236 Method for manufacturing silicon thin film conductive element  
In a silicon conductor doped with an impurity of 100 nm or less thick, a method is provided for manufacturing a silicon thin film conductive element which can prevent the increase of resistance...
6033490 Growth of GaN layers on quartz substrates  
In a method of manufacturing a semiconductor device which includes a quartz substrate having a z-cut plane of (0001) plane on a surface, a GaN film is first deposited on the surface. Finally, the...
6033972 Growing method of GaAs quantum dots using chemical beam epitaxy  
The formation of self-assembled GaAs quantum dots on (100) GaAs via chemical beam epitaxy (CBE) technique using triethylgallium (TEGa) and arsine (AsH 3 ) is disclosed. GaAs quantum dots are easy...
6030887 Flattening process for epitaxial semiconductor wafers  
Process for the preparation of an epitaxial wafer having a total thickness variation and/or site total indicated reading of less than about 1.0 μms. The distance between the front and back...
6030848 Method for manufacturing a GaN-based compound semiconductor light emitting device  
A manufacturing method for high quality GaN-based light emitting devices. The method enable effective growth of an Al y Ga 1 -y N (0≤y≤1) layer on an In x Ga 1 - N (0≤x≤1) layer by CVD....
5989985 Semiconductor single crystalline substrate and method for production thereof  
In a semiconductor single crystalline substrate provided with a protecting film to prevent autodoping on the reverse surface thereof, for growing a vapor-phase epitaxial layer on the main obverse...
5970314 Process for vapor phase epitaxy of compound semiconductor  
A process for forming a high quality epitaxial compound semiconductor layer of indium gallium nitride In x Ga 1 -x N, (where 0<x<1) on a substrate. A first gas including indium trichloride...
5966625 Method for making a slant-surface silicon wafer having a reconstructed atomic-level stepped surface structure  
A single crystal silicon wafer is sliced off so as to have a slant surface that is inclined from plane (001) such that the normal of the slant surface is inclined by 0.01° to 0.2° from direction...
5956602 Deposition of polycrystal Si film  
The present invention provides a method for depositing polycrystal Si films, including n-type and p-type polycrystal Si films, using a material gas, a doping gas, and hydrogen gas. This method...
5937313 Method of forming quantum wire for compound semiconductor  
Disclosed is a method of forming quantum wires for compound semiconductors capable of forming a large number of quantum wires. Quantum wires for compound semiconductors according to the present...
5930656 Method of fabricating a compound semiconductor device  
A substrate for forming a compound semiconductor device is placed in a reaction chamber. An MOCVD method or a GS-MBE method is used to grow compound semiconductor layers on the substrate. The grown...
5926726 In-situ acceptor activation in group III-v nitride compound semiconductors  
A method of manufacturing a p-type III-V nitride compound semiconductor utilizing vapor phase epitaxy is carried out in a MOCVD reactor by growing a III-V nitride compound semiconductor in the...
5908305 Electro-optic device  
The device comprises a layer of silicon separated from a substrate by a layer of insulating material. A rib having an upper surface and two side surfaces is formed in the layer of silicon to...
5895260 Method of fabricating semiconductor devices and the devices  
Fabricating a device including a Schottky diode by growing a dielectric film on a SiC substrate structure and forming an ohmic contact on the opposite surface of the substrate structure by...
5891790 Method for the growth of P-type gallium nitride and its alloys  
Growth of doped gallium nitride, especially p-type gallium nitride, without using post-growth processing is achieved by eliminating hydrogen containing molecules from the growth process before...
Matches 51 - 100 out of 183 < 1 2 3 4 >