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7629236 Method for passivating crystal silicon surfaces  
In a method of making a c-Si-based cell or a μc-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD...
7601217 Method of fabricating an epitaxially grown layer  
A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A...
7560366 Nanowire horizontal growth and substrate removal  
The present invention provides processes for producing horizontal nanowires that are separate and oriented and allow for processing directly on a substrate material. The nanowires grow horizontally...
7557027 Method of producing microcystalline silicon germanium suitable for micromachining  
A method of depositing a structural SiGe layer is presented. The structural SiGe layer may be located on top of a sacrificial layer above a substrate. The substrate may contain a semiconductor...
7553742 Method(s) of forming a thin layer  
A method of forming a thin layer including providing a first single-crystalline silicon layer partially exposed through an opening in an insulation pattern and forming an epitaxial layer on the...
7547617 Semiconductor device including container having epitaxial silicon therein  
Methods for growing epitaxial silicon are provided. Methods for controlling bottom stacking fault propagation in epitaxial silicon are also provided.
7538010 Method of fabricating an epitaxially grown layer  
A method of forming an epitaxially grown layer by providing a support substrate that includes a region of weakness therein to define a support portion and a remainder portion on opposite sides of...
7538015 Method of manufacturing micro structure, and method of manufacturing mold material  
Disclosed herein are a method of producing microstructure and a method of producing mold, the methods permitting production of much smaller pores than before in an atmosphere where impurities are...
7524741 Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device  
A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga 2 O 3 substrate in a MOCVD apparatus; providing a H 2 atmosphere in the MOCVD apparatus and setting a...
7524742 Structure of metal interconnect and fabrication method thereof  
A process and structure for a metal interconnect includes providing a substrate with a first electric conductor, forming a first dielectric layer and a first patterned hard mask, using the first...
7517775 Methods of selective deposition of heavily doped epitaxial SiGe  
The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate...
7510906 Diamond substrate and method for fabricating the same  
A diamond substrate and a method for fabricating the same are provided wherein a SiC layer is formed on a lower surface of a diamond layer for preventing the diamond layer from being deformed after...
7504324 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method  
A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an...
7482235 Semiconductor device and method of manufacturing the same  
A semiconductor device with an elevated source/drain structure provided in each predetermined position defined by the oxide film and gate wiring on a semiconductor silicon substrate, where an...
7456034 Nitride semiconductor device and method for fabricating the same  
A nitride semiconductor device comprises: a well layer of nitride semiconductor containing In and Ga; barrier layers of nitride semiconductor sandwiching the well layer, containing Al and Ga, and...
7439142 Methods to fabricate MOSFET devices using a selective deposition process  
In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes...
7407872 Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition  
Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <10 1 0> M-axis is identified as a preferential nanowire growth direction through a detailed study of...
7368368 Multi-chamber MOCVD growth apparatus for high performance/high throughput  
In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The...
7341844 Methods for diagnosing autism  
The invention relates to the use of Reelin as a marker for diagnosing psychiatric conditions. The disclosed tools and techniques can facilitate the diagnosis of psychiatric disorders including...
7320931 Interfacial layer for use with high k dielectric materials  
Methods and apparatus are provided for depositing a layer of pure germanium can on a silicon substrate. This germanium layer is very thin, on the order of about 14 Å, and is less than the...
7291544 Homoepitaxial gallium nitride based photodetector and method of producing  
A photodetector ( 100, 200, 300 ) comprising a gallium nitride substrate, at least one active layer ( 104, 302 ) disposed on the substrate ( 102, 202, 306 ), and a conductive contact structure (...
7271077 Deposition methods with time spaced and time abutting precursor pulses  
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
7250357 Manufacturing method for strained silicon wafer  
A manufacturing method for producing a stained silicon wafer has the steps of forming an Si 1-x Ge x composition-graded layer of which Ge concentration is stepwisely increased on a single crystal...
7244667 Method and device for the production of thin epitaxial semiconductor layers  
System for producing diffusion-inhibiting epitaxial semiconductor layers, by means of which thin diffusion-inhibiting, epitaxial semiconductor layers can be produced on large semiconductor...
7244668 Methods of manufacturing semiconductor devices  
Methods for manufacturing semiconductor devices are disclosed. In one example, the semiconductor device has a gate and source/drain regions formed on a substrate. One example method includes...
7229892 Semiconductor device and method of manufacturing the same  
A method of manufacturing a semiconductor device, includes preparing a semiconductor substrate, bonding a first semiconductor layer onto a part of the semiconductor substrate with a first...
7217641 Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby  
More specifically, gallium nitride semiconductor layers may be fabricated by etching an underlying gallium nitride layer on a sapphire substrate, to define at least one post in the underlying...
7208338 Method of manufacturing semiconductor light emitting device  
A method of manufacturing a ridge type semiconductor light emitting device includes: a process of epitaxially growing a multi-layered semiconductor layer having at least a first conductive type...
7205216 Modification of electrical properties for semiconductor wafers  
A method and structure for fabricating semiconductor wafers. The method comprises providing a plurality of semiconductor wafers. The plurality of semiconductor wafers comprises a first...
7195993 Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches  
A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be...
7186627 Method for forming device isolation film of semiconductor device  
A method for forming device isolation film of semiconductor device is provided, the method including forming a pad oxide film, a pad nitride film, and an oxide film for device isolation on a...
7183181 Dynamic edge bead removal  
A method of removing an edge bead of a coated material on a substrate. The substrate is rotated, and a fluid that solvates the coated material is delivered. The delivery of the fluid is directed...
7125732 Semiconductor light emitting device and its manufacturing method  
In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding...
7115427 Red light-emitting device and method for preparing the same  
The present red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, a plurality of silicon nanocrystals distributed...
7115489 Methods of growing epitaxial silicon  
Methods for growing epitaxial silicon are provided. Methods for controlling bottom stacking fault propagation in epitaxial silicon are also provided.
7067405 Atmospheric glow discharge with concurrent coating deposition  
A plasma is produced in a treatment space by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes separated by a dielectric...
7063751 Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners  
A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is...
7029988 Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium  
A method and device are provided for shallow trench isolation for a silicon wafer containing silicon-germanium. In one example, the method comprises forming a trench region in a silicon-germanium...
7001787 Electrode manufacturing method  
An electrode manufacturing method comprises: forming plural protruding portions on a surface of a substrate; introducing first particles having a size that changes according to heat, light, or a...
6995077 Epitaxially coated semiconductor wafer and process for producing it  
A semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface, wherein the surface of the epitaxial layer has a...
6979370 Methods, complexes, and system for forming metal-containing films  
A method of forming a film on a substrate using Group IIIA metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor...
6969627 Light-emitting diode and the manufacturing method of the same  
The specification discloses a light-emitting diode and the corresponding manufacturing method. A GaN thick film with a slant surface is formed on the surface of a substrate. An epitaxial slant...
6969670 Selective growth method, and semiconductor light emitting device and fabrication method thereof  
At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective...
6949394 Optical semiconductor device and method of fabricating the same  
An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The...
6890785 Nitride semiconductor, semiconductor device, and manufacturing methods for the same  
A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor...
6846728 Semiconductor thin film, semiconductor device employing the same, methods for manufacturing the same and device for manufacturing a semiconductor thin film  
By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities...
6838153 Layered product, capacitor and a method for producing the layered product  
A method for producing a laminate having resin layers and thin metal layers by repeating a process unit comprising a step of laminating a resin layer by applying a resin material, a step of...
6828182 Epitaxial thin film forming method  
A method for selectively forming an epitaxial thin film on a semiconductor substrate by controlling a flow rate of a source gas supplied to a deposition ambient includes determining a relation...
6808986 Method of forming nanocrystals in a memory device  
Nanocrystals ( 22 ) are formed in a semiconductor, such as for example, in a memory having a floating gate. A dielectric ( 18 ) overlies a substrate ( 12 ) and is placed in a chemical vapor...
RE38613 Method for growing a nitride compound semiconductor  
A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration,...
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