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7407872 Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition  
Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <10 1 0> M-axis is identified as a preferential nanowire growth direction through a detailed study of...
7368368 Multi-chamber MOCVD growth apparatus for high performance/high throughput  
In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The...
7341844 Methods for diagnosing autism  
The invention relates to the use of Reelin as a marker for diagnosing psychiatric conditions. The disclosed tools and techniques can facilitate the diagnosis of psychiatric disorders including...
7329593 Germanium deposition  
A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer...
7320931 Interfacial layer for use with high k dielectric materials  
Methods and apparatus are provided for depositing a layer of pure germanium can on a silicon substrate. This germanium layer is very thin, on the order of about 14 Å, and is less than the...
7300859 Atmospheric glow discharge with concurrent coating deposition  
A plasma is produced in a treatment space ( 58 ) by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes ( 54,56 ) separated by a...
7291544 Homoepitaxial gallium nitride based photodetector and method of producing  
A photodetector ( 100, 200, 300 ) comprising a gallium nitride substrate, at least one active layer ( 104, 302 ) disposed on the substrate ( 102, 202, 306 ), and a conductive contact structure (...
7271077 Deposition methods with time spaced and time abutting precursor pulses  
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
7250357 Manufacturing method for strained silicon wafer  
A manufacturing method for producing a stained silicon wafer has the steps of forming an Si 1-x Ge x composition-graded layer of which Ge concentration is stepwisely increased on a single crystal...
7244668 Methods of manufacturing semiconductor devices  
Methods for manufacturing semiconductor devices are disclosed. In one example, the semiconductor device has a gate and source/drain regions formed on a substrate. One example method includes...
7244667 Method and device for the production of thin epitaxial semiconductor layers  
System for producing diffusion-inhibiting epitaxial semiconductor layers, by means of which thin diffusion-inhibiting, epitaxial semiconductor layers can be produced on large semiconductor...
7229892 Semiconductor device and method of manufacturing the same  
A method of manufacturing a semiconductor device, includes preparing a semiconductor substrate, bonding a first semiconductor layer onto a part of the semiconductor substrate with a first...
7217641 Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby  
More specifically, gallium nitride semiconductor layers may be fabricated by etching an underlying gallium nitride layer on a sapphire substrate, to define at least one post in the underlying...
7208338 Method of manufacturing semiconductor light emitting device  
A method of manufacturing a ridge type semiconductor light emitting device includes: a process of epitaxially growing a multi-layered semiconductor layer having at least a first conductive type...
7205216 Modification of electrical properties for semiconductor wafers  
A method and structure for fabricating semiconductor wafers. The method comprises providing a plurality of semiconductor wafers. The plurality of semiconductor wafers comprises a first...
7195993 Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches  
A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be...
7186627 Method for forming device isolation film of semiconductor device  
A method for forming device isolation film of semiconductor device is provided, the method including forming a pad oxide film, a pad nitride film, and an oxide film for device isolation on a...
7183181 Dynamic edge bead removal  
A method of removing an edge bead of a coated material on a substrate. The substrate is rotated, and a fluid that solvates the coated material is delivered. The delivery of the fluid is directed...
7172953 Methods of forming nanoscopic wire-based devices and arrays  
Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes....
7166528 Methods of selective deposition of heavily doped epitaxial SiGe  
The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate...
7157344 Vapor-phase growth method, semiconductor manufacturing method and semiconductor device manufacturing method  
In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing...
7125732 Semiconductor light emitting device and its manufacturing method  
In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding...
7115489 Methods of growing epitaxial silicon  
Methods for growing epitaxial silicon are provided. Methods for controlling bottom stacking fault propagation in epitaxial silicon are also provided.
7115427 Red light-emitting device and method for preparing the same  
The present red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, a plurality of silicon nanocrystals distributed...
7067405 Atmospheric glow discharge with concurrent coating deposition  
A plasma is produced in a treatment space by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes separated by a dielectric...
7063751 Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners  
A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is...
7029988 Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium  
A method and device are provided for shallow trench isolation for a silicon wafer containing silicon-germanium. In one example, the method comprises forming a trench region in a silicon-germanium...
7001787 Electrode manufacturing method  
An electrode manufacturing method comprises: forming plural protruding portions on a surface of a substrate; introducing first particles having a size that changes according to heat, light, or a...
6995077 Epitaxially coated semiconductor wafer and process for producing it  
A semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface, wherein the surface of the epitaxial layer has a...
6979370 Methods, complexes, and system for forming metal-containing films  
A method of forming a film on a substrate using Group IIIA metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor...
6969670 Selective growth method, and semiconductor light emitting device and fabrication method thereof  
At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective...
6969627 Light-emitting diode and the manufacturing method of the same  
The specification discloses a light-emitting diode and the corresponding manufacturing method. A GaN thick film with a slant surface is formed on the surface of a substrate. An epitaxial slant...
6949394 Optical semiconductor device and method of fabricating the same  
An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The...
6890785 Nitride semiconductor, semiconductor device, and manufacturing methods for the same  
A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor...
6887736 Method of forming a p-type group II-VI semiconductor crystal layer on a substrate  
A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique....
6878606 Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium  
A method and device are provided for shallow trench isolation for a silicon wafer containing silicon-germanium. In one example, the method comprises forming a trench region in a silicon-germanium...
6846728 Semiconductor thin film, semiconductor device employing the same, methods for manufacturing the same and device for manufacturing a semiconductor thin film  
By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities...
6838153 Layered product, capacitor and a method for producing the layered product  
A method for producing a laminate having resin layers and thin metal layers by repeating a process unit comprising a step of laminating a resin layer by applying a resin material, a step of...
6828182 Epitaxial thin film forming method  
A method for selectively forming an epitaxial thin film on a semiconductor substrate by controlling a flow rate of a source gas supplied to a deposition ambient includes determining a relation...
6808986 Method of forming nanocrystals in a memory device  
Nanocrystals ( 22 ) are formed in a semiconductor, such as for example, in a memory having a floating gate. A dielectric ( 18 ) overlies a substrate ( 12 ) and is placed in a chemical vapor...
RE38613 Method for growing a nitride compound semiconductor  
A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration,...
6759346 Method of forming dielectric layers  
A method of forming a dielectric layer includes placing a semiconductor wafer in a reaction chamber. Oxygen, hafnium and silicon sources are separately provided to the reaction chamber to react...
6756325 Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region  
Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor...
6730576 Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layer  
A strained silicon layer is grown on a layer of silicon germanium and a layer of silicon germanium is grown on the strained silicon in a single continuous in situ deposition process with the...
6723621 Abrupt delta-like doping in Si and SiGe films by UHV-CVD  
A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration...
6703290 Growth of epitaxial semiconductor material with improved crystallographic properties  
A method of growing epitaxial semiconductor layers with reduced crystallographic defects. The method includes etching the wafer surface and then growing an initial portion of the epitaxial layer...
6703288 Compound crystal and method of manufacturing same  
Provided are a compound semiconductor crystal substrate capable of reducing planar defects such as twins and anti-phase boundaries occurring in epitaxially grown crystals without additional steps...
6703255 Method for fabricating a III nitride film  
Plural island-shaped crystal portions are formed on a first Al-including nitride base. The island-shaped crystal portions are made of a second nitride, and have a nitride film including a third...
6696372 Method of fabricating a semiconductor structure having quantum wires and a semiconductor device including such structure  
A method for the production of a semiconductor structure having self-organized quantum wires is described. The process includes the formation of multi-atomic steps on a (001) oriented semiconductor...
6673701 Atomic layer deposition methods  
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
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