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Document Title |
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7605062 |
Doped nanoparticle-based semiconductor junction
A doped semiconductor junction for use in an electronic device and a method for making such junction is disclosed. The junction includes a first polycrystalline semiconductor layer doped with...
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7563698 |
Method for manufacturing semiconductor device
Method for manufacturing a semiconductor device including a transistor having a grooved gate structure and a transistor having a planar gate structure on the same substrate, in which, even when the...
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7550328 |
Method for production of thin-film semiconductor device
Disclosed herein is a method for production of a thin-film semiconductor device which includes, a first step to form a gate electrode on a substrate, a second step to form a gate insulating film of...
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7547647 |
Method of making a structure
A method for making a structure includes depositing a solution upon a surface and irradiating the solution with microwaves to crystallize solute of the solution on the surface.
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7511298 |
Method for forming semiconductor film and use of semiconductor film
The present invention provides a process for forming a semiconductor film, comprising the steps of applying a semiconductor particle dispersion liquid to a substrate surface by spray coating in...
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7494903 |
Doped nanoparticle semiconductor charge transport layer
A method is disclosed for making a doped semiconductor transport layer for use in an electronic device comprising: growing in-situ doped semiconductor nanoparticles in a colloidal solution;...
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7494841 |
Solution-based deposition process for metal chalcogenides
A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to...
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7375011 |
Ex-situ doped semiconductor transport layer
A method of making an ex-situ doped semiconductor transport layer for use in an electronic device includes: growing a first set of semiconductor nanoparticles having surface organic ligands in a...
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7358162 |
Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device, includes the steps of: raising a temperature of a sapphire substrate which is included in the semiconductor device from a room temperature to a...
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7316969 |
Method and apparatus for thermally treating substrates
The object of the disclosure is to measure temperature using pyrometers, in a simple and economic way, enabling precise temperature measurement, even for low temperatures. The disclosure presents...
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7316967 |
Flow method and reactor for manufacturing noncrystals
A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a segmented-flow method.
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7294586 |
Method of processing a substrate, heating apparatus, and method of forming a pattern
A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image...
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7256147 |
Porous body and manufacturing method therefor
It is an object of the present invention to provide a porous body containing an oxide semiconductor in which more efficient photocatalytic reactions and photoelectrode reactions occur. The present...
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7256082 |
Production method for semiconductor device
A method of manufacturing a semiconductor device that provides a semiconductor device having improved channel mobility includes a process of forming a gate insulation film of silicon oxide film,...
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7141492 |
Method for forming thin-film, apparatus for forming thin-film, method for manufacturing semiconductor device, electro-optical unit, and electronic apparatus
The invention provides a method of forming a high-performance thin-film at low cost using a liquid material in safety, an apparatus to form a thin-film, a method of manufacturing a semiconductor...
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7098119 |
Thermal anneal process for strained-Si devices
A method is disclosed for forming a semiconductor device using strained silicon. After forming a first substrate material with a first natural lattice constant on a device substrate and a second...
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7083680 |
Sublimation and purification method
A glass bottle containing a sample of an organic material to be purified is located at a position surrounded by a heater near one end in an outer glass tube. An inner glass tube for catching...
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7052980 |
Transistor manufacturing method, electrooptical apparatus and electronic apparatus
A method for manufacturing a transistor, includes the steps of preparing a substrate, preparing a liquid material containing a silane compound, the silane compound forming a high order silane when...
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7049695 |
Method and device for heat dissipation in semiconductor modules
A structure and method are provided for dissipating heat from a semiconductor device chip. A first layer of a dielectric material (e.g. polyimide) is formed on a front side of a heat spreader...
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7030419 |
Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof
Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof are disclosed. The present invention provides a silica or silica-related thin film for...
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7001787 |
Electrode manufacturing method
An electrode manufacturing method comprises: forming plural protruding portions on a surface of a substrate; introducing first particles having a size that changes according to heat, light, or a...
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7001778 |
Method of making layered superlattice material with improved microstructure
In the manufacture of an integrated circuit, a first electrode ( 48 ) is formed on a substrate ( 28 ). In a first embodiment, a strontium bismuth tantalate layer ( 50 ) and a second electrode ( 52...
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6973710 |
Method and apparatus for making devices
A method and an apparatus for manufacturing a device are provided. The method and the apparatus can form micro wiring without undesired wetting and spreading using an inexpensive functional-liquid...
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6911367 |
Methods of forming semiconductive materials having flattened surfaces; methods of forming isolation regions; and methods of forming elevated source/drain regions
The invention includes methods of forming epitaxially-grown semiconductive material having a flattened surface, and methods of incorporating such material into trenched regions and elevated/source...
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6908797 |
Method of manufacturing a semiconductor device
The present invention provides a manufacturing method of a semiconductor device, which is able to improve on-current and mobility of a polycrystal TFT without disturbing a high integration level,...
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6897130 |
Method for thermal processing semiconductor wafer with a flash discharge lamp after preheating to a predetermined temperature
The present invention provides a method for thermal processing a semiconductor wafer wherein the semiconductor wafer is heat-treated by means of flash radiation means constituted by a flash...
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6884700 |
Method of manufacturing device, device, and electronic apparatus
A method of manufacturing a device comprising individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a...
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6878645 |
Method for manufacturing silicon wafer
Provided is a process for manufacturing a silicon wafer employing heat treatment which is applied on the silicon wafer in inert gas atmosphere represented by Ar annealing to annihilate Grown-in...
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6825069 |
System and method for fabricating a transistor by a low temperature heat treatment process
The invention provides a method for fabricating a transistor in which the bulk characteristics of the gate insulating film and the interface characteristics can be simultaneously improved by a...
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6716675 |
Semiconductor device, method of manufacturing semiconductor device, lead frame, method of manufacturing lead frame, and method of manufacturing semiconductor device with lead frame
The present invention relates to a leadless surface-mount resin-sealing semiconductor device and a manufacturing method thereof; in a semiconductor device comprising a semiconductor element, a...
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6713370 |
Process for the preparation of an ideal oxygen precipitating silicon wafer capable of forming an enhanced denuded zone
A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a bulk layer between...
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6589857 |
Manufacturing method of semiconductor film
A first semiconductor film made of a nitride semiconductor is grown through epitaxial growth on a light transmitting substrate. A thermal decomposition layer is disposed in a space between the...
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6559518 |
MOS heterostructure, semiconductor device with the structure, and method for fabricating the semiconductor device
An MOS heterostructure includes: a single crystal silicon substrate; an insulating film formed on the substrate; and a conductive film formed on the insulating film. The substrate includes a...
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6541354 |
Method for forming silicon film
A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is...
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6518087 |
Method for manufacturing solar battery
A solar battery is provided having a structure in which at least two semiconductor thin-films are disposed one over the other between a pair of electrodes, each semiconductor thin-film differing...
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6500737 |
System and method for providing defect free rapid thermal processing
A system and method for providing substantially defect free rapid thermal processing. The present invention includes a wafer processing system used to process semiconductor wafers into electronic...
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6468881 |
Method for producing a single crystal silicon
A single crystal silicon is produced using a Czocharalski (CZ) method. Silicon nitride powder is put in the bottom of a quartz crucible to provide a nitrogen concentration in the single crystal...
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6413791 |
Epitaxial wafer and manufacturing method thereof as well as light-emitting diode with enhanced luminance
An epitaxial semiconductor crystal plate or wafer capable of attaining increased reliability with enhanced luminance, a manufacturing method thereof, as well as a light-emitting diode (LED). It has...
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6306735 |
Method for producing a semiconductor wafer
A method for producing a semiconductor wafer includes the deposition of an epitaxial layer onto a substrate wafer in a deposition reactor. The semiconductor wafer, following the deposition of the...
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6284587 |
Fabricating method for semiconductor device
In the fabrication of capacitors, a TiO 2 film is formed from a TiN film by means of heat-treatment within an atmosphere which does not contain oxygen. This serves to prevent the polysilicon which...
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6218212 |
Apparatus for growing mixed compound semiconductor and growth method using the same
An apparatus for growing a mixed compound semiconductor layer utilizing three or more source gases. The apparatus includes a horizontal type reactor chamber. The reactor chamber includes a...
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6197665 |
Lamination machine and method to laminate a coverlay to a microelectronic package
A lamination machine includes means for using gas pressure to bring a coverlay and a microelectronic package into intimate contact and means for heating a coverlay adhesive in order to seal the...
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6162708 |
Method for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal wafer
There is disclosed a method for producing an epitaxial silicon single crystal wafer comprising the steps of growing a silicon single crystal ingot wherein nitrogen is doped by Czochralski method,...
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6100167 |
Process for the removal of copper from polished boron doped silicon wafers
A process for removing copper from a boron doped, polished silicon wafer which contains copper on its polished surface and in its interior. In the process, the wafer is annealed at a temperature of...
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6033995 |
Inverted layer epitaxial liftoff process
The invention relates to a method for integrating semiconductor device epilayers with arbitrary host substrates, where an indium gallium arsenide etch-stop layer (34) is deposited on an indium...
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6017807 |
P-type GaN compound semiconductor and method for manufacturing the same
After p-type gallium nitride compound semiconductor layers, to which p-type impurity is added, are formed by virtue of chemical vapor deposition, the p-type gallium nitride compound semiconductor...
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5981362 |
Manufacturing method of wiring
An insulating film is formed on a surface of a semiconductor substrate. Then a photoresist pattern including only one wedge-like area is formed on a surface of the insulating film. Next, a groove...
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5866471 |
Method of forming semiconductor thin film and method of fabricating solar cell
A silicon thin film is formed by coating on a substrate a solution of polysilane represented by the general formula --(SiR 1 2 ) n --, where R 1 substituents are selected from the group...
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5861321 |
Method for doping epitaxial layers using doped substrate material
A method is provided for producing an n-type or p-type epitaxial layer using a doped substrate material. The method includes growing a substrate (12), preferably from a material to which an...
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5858838 |
Method for increasing DRAM capacitance via use of a roughened surface bottom capacitor plate
A method for increasing the surface area of a polysilicon storage node electrode, used as a component for a DRAM stacked capacitor structure, has been developed. The method features forming a metal...
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