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5807495 |
Bi-based dielectric thin films, and compositions and method for forming them
Dielectrics represented by (Sr x Bi 1 -x)Bi 2 Ta 2 O y , wherein 0<x<1, and y represents the total number of oxygen atoms bonded to the respective metals, and thin films thereof, can be...
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5629216 |
Method for producing semiconductor wafers with low light scattering anomalies
A monitor wafer used to determine the cleanliness of a wafer fabrication environment requires a surface having a minimum of light scattering anomalies so that contamination deposited by the...
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5535699 |
Method of making II-VI semiconductor infrared light detector
A method for producing a photo-voltaic infrared detector including growing a crystalline CdHgTe layer on a CdTe substrate by liquid phase epitaxy using a growth melt including tellurium as a...
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5264397 |
Method for activating zinc in semiconductor devices
A method for activating the zinc dopant in an active layer of a Group III/Group V semiconductor device comprises forming a layer of zinc doped Group III/Group IV material, and thereafter annealing...
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5259900 |
Reflux annealing device and method
Methods of annealing Hg 1 -x Cd x Te slices (56) in a mercury reflux chamber (32, 34) with a mercury reservoir (52) at the bottom and condensation regions at the top (62) is disclosed. The chamber...
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5228927 |
Method for heat-treating gallium arsenide monocrystals
A heat-treating method for an indium-doped dislocation-free gallium arsenide monocrystal having a low carbon concentration and grown in the Liquid Encapsulated Czochralski method, comprising a...
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5219632 |
Compound semiconductor single crystals and the method for making the crystals, and semiconductor devices employing the crystals
According to the present invention, an ingot of the compound semiconductor single crystal grown by the LEC method or the HB method, or a block/blocks or wafers cut from the ingot is subjected to a...
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5162256 |
Process for producing doped semiconductor layers
A multiplicity of thin layers are applied on top of each other having alternately comparatively high concentrations of charge carriers and no doping. The thickness and the concentration of charge...
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5110404 |
Method for heat processing of silicon
In a method for heat process of silicon, a single crystal silicon produced by the Czochralski process is thermally processed at a low temperature ranging from 400° C. to 550° C. Outside this...
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5098867 |
Heat treatment for compound semiconductor wafer
A compound semiconductor wafer wherein arsenide deposit is included with uniform size and distribution in such a manner that a compound reagent of gallium and polycrystal gallium arsenide is melted...
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5023198 |
Method for fabricating self-stabilized semiconductor gratings
A quaternary semiconductor diffraction grating, such as an InGaAsP grating suitable for a DFB laser, is embedded in a semiconductor substrate, such as InP. In one embodiment, the grating is...
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4904618 |
Process for doping crystals of wide band gap semiconductors
Non-equilibrium impurity incorporation is used to dope hard-to-dope crystals of wide band gap semiconductors, such as zinc selenide and zinc telluride. This involves incorporating into the crystal...
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4853076 |
Semiconductor thin films
An improved method and apparatus for optimizing the electrical properties while crystallizing material is disclosed. In this invention, a material which is to be crystallized is formed on a...
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4833103 |
Process for depositing a III-V compound layer on a substrate
A process comprising applying to a substrate a thin film comprised of a liquid carrier and a precursor selected from among compounds in which one or more pairs of group III and V elements are each...
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4642142 |
Process for making mercury cadmium telluride
Mercury cadmium telluride (Hg 1 -x Cd x Te) is formed from an atmosphere of mercury vapor maintained at a temperature of within about 1° C. of a desired temperature which contacts a liquid...
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4585511 |
Method of growing gallium arsenide crystals using boron oxide encapsulant
Gallium arsenide single crystals are grown under an encapsulant of boron oxide which contains a predetermined amount of water in the range of 200 to 1000 ppm. The GaAs crystals so produced are...
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4526632 |
Method of fabricating a semiconductor pn junction
A method of forming a pn junction with a Group IIB-VIB compound semiconductor containing Zn is disclosed, the method including preparing an n type semiconductor region either locally or entirely in...
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4376659 |
Process for forming semiconductor alloys having a desired bandgap
An epitaxial layer of a narrow-gap semiconductor is deposited on a substrate comprising a wider-gap semiconductor. The opposite surface of the substrate is then illuminated with light pulses at a...
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4374678 |
Process for forming HgCoTe alloys selectively by IR illumination
A HgCdTe film is produced on a CdTe substrate, by depositing HgTe on a CdTe substrate, and then illuminating the substrate from the underside with infrared light at a wavelength longer than the...
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4232439 |
Masking technique usable in manufacturing semiconductor devices
A semiconductor layer different in material from a semiconductor substrate formed on at least one part of the surface of the substrate is partially removed in accordance with a planar configuration...
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4190486 |
Method for obtaining optically clear, high resistivity II-VI, III-V, and IV-VI compounds by heat treatment
Desired conductivity type and carrier concentration in the Group II-VI, III-V, and IV-VI compounds in which at least one constituent is volatile is obtained by varying the partial pressure of one...
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4076572 |
Crystal growth and anneal of lead tin telluride by recrystallization from a heterogeneous system
Large bulk single crystals of lead tin telluride are synthesized by first mixing desired amounts of lead, tin and tellurium with, if desired, bismuth and reacting the mixture at 950° C to form a...
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4045257 |
III(A)-(VB) Type luminescent diode
Due to its dopant structure, the radiant band of a III(A) - V(B) type luminescent diode, emitting light radiation in the plane of the PN-junction, possesses differences in delay time of ≤ 10 -10 ...
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3939035 |
Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density
A method for obtaining a homogeneous dislocation density in a semiconductor rod, by first subjecting the semiconductor rod in a known manner, to a crucible-free zone melting process whereby it...
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3925147 |
Preparation of monocrystalline lead tin telluride
Large bulk single crystals of lead tin telluride are synthesized by first mixing desired amounts of lead, tin and tellurium with, if desired, bismuth and reacting the mixture at 950°C to form a...
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3853643 |
EPITAXIAL GROWTH OF GROUP III-V SEMICONDUCTORS FROM SOLUTION
Epitaxial layers of Group III-V compound semiconductors are grown from solution, simultaneously on several substrate wafers. The solution is produced in bulk at an elevated temperature. The mass of...
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3762968 |
METHOD OF FORMING REGION OF A DESIRED CONDUCTIVITY TYPE IN THE SURFACE OF A SEMICONDUCTOR BODY
A body of single crystalline gallium arsenide or aluminum gallium arsenide containing a relatively low concentration of aluminum is coated by liquid phase epitaxy with a layer of aluminum gallium...
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3470038 |
ELECTROLUMINESCENT P-N JUNCTION DEVICE AND PREPARATION THEREOF
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3129119 |
Production of p.n. junctions in semiconductor material
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2988464 |
Method of making transistor having thin base region
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2977256 |
Semiconductor devices and methods of making same
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2953486 |
Junction formation by thermal oxidation of semiconductive material
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2815303 |
Method of making junction single crystals
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2809135 |
Method of forming p-n junctions in semiconductor material and apparatus therefor
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2785096 |
Manufacture of junction-containing silicon crystals
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3723190 |
Title is not available
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3690964 |
Title is not available
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